I-substrate ehlanganisiwe engu-6 intshi engu-4H SEMI Uhlobo lwe-SiC Ubukhulu 500μm TTV≤5μm Ibanga le-MOS

I-substrate ehlanganisiwe engu-6 intshi engu-4H SEMI Uhlobo lwe-SiC Ubude obungu-500μm TTV≤5μm Ibanga le-MOS Isithombe Esifakiwe

Incazelo emfushane:

Ngokuthuthuka okusheshayo kobuchwepheshe bokuxhumana be-5G kanye ne-radar, i-substrate ye-SiC ehlanganisiwe engamasentimitha angu-6 isibe yinto eyinhloko yokukhiqiza amadivayisi asebenzisa imvamisa ephezulu. Uma kuqhathaniswa ne-substrate yendabuko ye-GaAs, le substrate igcina ukumelana okuphezulu (>10⁸Ω·cm) ngenkathi ithuthukisa ukuhanjiswa kokushisa ngaphezu kwezikhathi ezi-5, ibhekana ngempumelelo nezinselele zokushabalalisa ukushisa kumadivayisi anamagagasi angama-millimeter. Ama-amplifier kagesi ngaphakathi kwamadivayisi ansuku zonke afana nama-smartphone e-5G kanye nama-terminal okuxhumana ngesathelayithi cishe akhiwe kule substrate. Sisebenzisa ubuchwepheshe bethu obukhethekile "bokunciphisa i-buffer layer doping", sinciphise ubuningi be-micropipe baba ngaphansi kuka-0.5/cm² futhi sathola ukulahlekelwa kwe-microwave okuphansi kakhulu okungu-0.05 dB/mm.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Izinto	Imininingwane	Izinto	Imininingwane
Ububanzi	150±0.2 mm	Ubulukhuni bangaphambili (ubuso be-Si-face)	I-Ra≤0.2 nm (5μm×5μm)
Uhlobo lwe-Polytype	4H	I-Edge Chip, Ukuklwebheka, Ukuqhekeka (ukuhlolwa okubonakalayo)	Akukho
Ukumelana	≥1E8 Ω·cm	I-TTV	≤5 μm
Ubukhulu bengqimba yokudlulisa	≥0.4 μm	I-Warp	≤35 μm
Ingenalutho (2mm>D>0.5mm)	≤5 ngayinye/I-Wafer	Ubukhulu	500±25 μm

Izici Eziyinhloko

1. Ukusebenza Okumangalisayo Okuvame Kakhulu
I-substrate ye-SiC ehlanganisiwe engamasentimitha angu-6 isebenzisa ukwakheka kwezingqimba ze-dielectric ezilinganisiwe, okuqinisekisa ukushintshashintsha okungaguquki kwe-dielectric okungu-<2% ku-Ka-band (26.5-40 GHz) kanye nokuthuthukisa ukuhambisana kwesigaba ngo-40%. Ukwanda okungu-15% ekusebenzeni kahle kanye nokusetshenziswa kwamandla okuphansi ngo-20% kumamojula we-T/R asebenzisa le substrate.

2. Ukuphathwa Kokushisa Okuphumelelayo
Isakhiwo esiyingqayizivele "sebhuloho elishisayo" esihlanganisiwe senza kube lula ukuhambisa ukushisa okuseceleni okungu-400 W/m·K. Kumamojula we-PA wesiteshi sesisekelo se-5G angu-28 GHz, izinga lokushisa le-junction likhuphuka ngo-28°C kuphela ngemva kwamahora angu-24 okusebenza okuqhubekayo—okungaphansi kuka-50°C kunezixazululo ezivamile.

3. Ikhwalithi Ephakeme Yesitsha Esicwebezelayo
Ngendlela ye-Physical Vapor Transport (PVT) ethuthukisiwe, sifinyelela ubuningi be-dislocation <500/cm² kanye ne-Total Thickness Variation (TTV) <3 μm.
4. Ukucubungula Okulungele Ukukhiqiza
Inqubo yethu yokubopha nge-laser eyenzelwe ngqo i-substrate ye-SiC ehlanganisiwe engamasentimitha angu-6 inciphisa ubuningi besimo sobuso ngama-oda amabili ngobukhulu ngaphambi kwe-epitaxy.

Izinhlelo Eziyinhloko

1. Izingxenye Eziyinhloko Zesiteshi Esiyisisekelo se-5G
Kuma-antenna aqinile e-MIMO, amadivayisi e-GaN HEMT kuma-substrate e-SiC ahlanganisiwe angama-intshi angu-6 athola amandla okukhipha angu-200W kanye nokusebenza kahle okungaphezulu kuka-65%. Ukuhlolwa kwensimu ku-3.5 GHz kubonise ukwanda okungu-30% ku-radius yokumboza.

2. Izinhlelo Zokuxhumana Ngesathelayithi
Ama-transceiver esathelayithi e-Low-Earth orbit (LEO) asebenzisa lesi sisekelo abonisa i-EIRP ephezulu ngama-dB angu-8 ku-Q-band (40 GHz) ngenkathi enciphisa isisindo ngo-40%. Ama-terminal e-SpaceX Starlink ayisebenzisele ukukhiqizwa ngobuningi.

3. Izinhlelo Zerada Yezempi
Amamojula e-T/R e-radar anezigaba kule substrate afinyelela i-bandwidth engu-6-18 GHz kanye nesibalo somsindo esiphansi njenge-1.2 dB, okwandisa ibanga lokutholakala ngamakhilomitha angu-50 ezinhlelweni ze-radar zokuxwayisa kusenesikhathi.

4. I-Radar ye-Millimeter-Wave yezimoto
Ama-radar chip ezimoto angu-79 GHz asebenzisa lesi sisekelo athuthukisa i-angle resolution ibe ngu-0.5°, ahlangabezana nezidingo zokushayela ezizimele ze-L4.

Sinikeza isixazululo sesevisi esiphelele esenziwe ngokwezifiso sama-substrate e-SiC angama-intshi angu-6 ahlanganisiwe angama-semi-insulating. Ngokuphathelene nokwenza ngokwezifiso amapharamitha ezinto, sisekela ukulawulwa okunembile kokumelana ngaphakathi kobubanzi obungu-10⁶-10¹⁰ Ω·cm. Ikakhulukazi ngezinhlelo zokusebenza zempi, singanikeza inketho yokumelana okuphezulu kakhulu okungu->10⁹ Ω·cm. Inikeza imininingwane emithathu yobukhulu obungu-200μm, 350μm kanye no-500μm ngasikhathi sinye, ngokubekezelelana kulawulwa ngokuqinile ngaphakathi kuka-±10μm, ukuhlangabezana nezidingo ezahlukene kusukela kumadivayisi anemvamisa ephezulu kuya kuzinhlelo zokusebenza ezinamandla aphezulu.

Ngokuphathelene nezinqubo zokwelashwa kobuso, sinikeza izixazululo ezimbili zobungcweti: I-Chemical Mechanical Polishing (CMP) ingafinyelela ukuthamba kobuso obusezingeni le-athomu nge-Ra<0.15nm, ihlangabezane nezidingo zokukhula kwe-epitaxial ezifunwa kakhulu; Ubuchwepheshe bokwelashwa kobuso obulungele i-epitaxial bezidingo zokukhiqiza okusheshayo bunganikeza izindawo ezibushelelezi kakhulu ezine-Sq<0.3nm kanye nobukhulu be-oxide obusele <1nm, okwenza kube lula kakhulu inqubo yokwelashwa kwangaphambi kokuphela kweklayenti.

I-XKH inikeza izixazululo eziphelele ezenziwe ngokwezifiso ze-substrates ze-SiC ezihlanganisiwe ezingamasentimitha angu-6

1. Ukwenza Ngokwezifiso Izinto Eziphathekayo
Sinikeza ukulungiswa okunembile kokumelana ngaphakathi kwebanga eliphakathi kuka-10⁶-10¹⁰ Ω·cm, ngezinketho ezikhethekile zokumelana okuphezulu kakhulu >10⁹ Ω·cm ezitholakalayo kuzinhlelo zokusebenza zempi/zezindiza.

2. Imininingwane Yobukhulu
Izinketho ezintathu zobukhulu obujwayelekile:

· 200μm (elungiselelwe amadivayisi anemvamisa ephezulu)

· 350μm (incazelo ejwayelekile)

· 500μm (eyenzelwe izinhlelo zokusebenza ezinamandla aphezulu)
· Zonke izinhlobo zigcina ukubekezelelana kobukhulu obuqinile obungu-±10μm.

3. Ubuchwepheshe Bokwelapha Okungaphezulu

Ukupholisha Kwemishini Yamakhemikhali (i-CMP): Kufinyelela ukuthamba kobuso obusezingeni le-athomu nge-Ra<0.15nm, kuhlangabezana nezidingo zokukhula kwe-epitaxial eziqinile ze-RF namadivayisi kagesi.

4. Ukucubungula Okuphezulu Okulungele I-Epi

· Iletha izindawo ezibushelelezi kakhulu ezinobukhulu obungu-Sq<0.3nm

· Ilawula ukujiya kwe-oxide yemvelo kube yi-<1nm

· Isusa izinyathelo ezintathu zokucubungula kusengaphambili ezindaweni zamakhasimende