I-wafer ye-SiC Epi engu-4inch ye-MOS noma i-SBD

I-Epitaxy ibhekisela ekukhuleni kwengqimba yezinto ezicwebezelayo zekhwalithi ephezulu ebusweni be-substrate ye-silicon carbide. Phakathi kwazo, ukukhula kwengqimba ye-epitaxial ye-gallium nitride ku-substrate ye-silicon carbide evikela kancane kubizwa ngokuthi i-epitaxy engenasici; ukukhula kwengqimba ye-epitaxial ye-silicon carbide ebusweni be-substrate ye-silicon carbide eqhubayo kubizwa ngokuthi i-epitaxy ehambisanayo.

I-Epitaxial ihambisana nezidingo zomklamo wedivayisi zokukhula kwesendlalelo esiyinhloko esisebenzayo, ikakhulukazi inquma ukusebenza kwe-chip kanye nedivayisi, izindleko ezingama-23%. Izindlela eziyinhloko ze-SiC thin film epitaxy kulesi sigaba zifaka: i-chemical vapor deposition (CVD), i-molecular beam epitaxy (MBE), i-liquid phase epitaxy (LPE), kanye ne-pulsed laser deposition and sublimation (PLD).

I-Epitaxy iyisixhumanisi esibaluleke kakhulu embonini yonke. Ngokukhulisa izendlalelo ze-epitaxial ze-GaN kuma-substrate e-silicon carbide angenawo umswakama, kukhiqizwa ama-wafer e-epitaxial e-GaN asekelwe ku-silicon carbide, angenziwa futhi abe amadivayisi e-GaN RF afana nama-transistors e-electron mobility aphezulu (HEMTs);

Ngokukhulisa ungqimba lwe-silicon carbide epitaxial ku-substrate eqhubayo ukuze uthole i-silicon carbide epitaxial wafer, kanye nongqimba lwe-epitaxial ekukhiqizweni kwama-diode e-Schottky, ama-transistors e-half-field effect egolide-oxygen, ama-transistors e-bipolar angenawo umoya kanye namanye amadivayisi wamandla, ngakho-ke ikhwalithi ye-epitaxial ekusebenzeni kwedivayisi inomthelela omkhulu kakhulu ekuthuthukisweni kwemboni nayo idlala indima ebaluleke kakhulu.