I-wafer ye-SiC Epi engu-4inch ye-MOS noma ye-SBD

I-wafer ye-SiC Epi engu-4inch ye-MOS noma Isithombe Esifakiwe se-SBD

Incazelo emfushane:

I-SiCC inomugqa wokukhiqiza we-wafer substrate ophelele we-SiC (Silicon Carbide), ohlanganisa ukukhula kwekristalu, ukucutshungulwa kwe-wafer, ukwenziwa kwe-wafer, ukupholisha, ukuhlanza nokuhlola. Njengamanje, singahlinzeka ngamawafa e-axial noma e-off-axis e-semi-insulating kanye ne-semi-conductive 4H kanye ne-6H SiC anosayizi we-5x5mm2, 10x10mm2, 2″, 3″, 4″ kanye no-6″, aphule ukucindezelwa kwesici, ukucutshungulwa kwekristalu. kanye nokukhula okusheshayo nokunye Iphule ngobuchwepheshe obubalulekile obufana ukucindezelwa kwesici, ukucutshungulwa kwembewu yekristalu nokukhula ngokushesha, futhi kwakhuthaza ucwaningo oluyisisekelo nokuthuthukiswa kwe-silicon carbide epitaxy, amadivaysi nolunye ucwaningo oluyisisekelo oluhlobene.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Epitaxy ibhekisela ekukhuleni kongqimba lwekristalu eyodwa yekhwalithi ephezulu ebusweni be-silicon carbide substrate. Phakathi kwazo, ukukhula kwe-gallium nitride epitaxial layer ku-semi-insulating silicon carbide substrate kubizwa ngokuthi i-heterogeneous epitaxy; ukukhula kongqimba lwe-silicon carbide epitaxial ebusweni be-conductive silicon carbide substrate kubizwa ngokuthi i-homogeneous epitaxy.

I-Epitaxial ihambisana nezidingo zokuklanywa kwedivayisi yokukhula kwesendlalelo esiyinhloko sokusebenza, inquma kakhulu ukusebenza kwe-chip nedivayisi, izindleko ezingu-23%. Izindlela eziyinhloko ze-SiC ifilimu encane ye-epitaxy kulesi sigaba zifaka: i-chemical vapor deposition (CVD), i-molecular beam epitaxy (MBE), i-liquid phase epitaxy (LPE), kanye ne-pulsed laser deposition and sublimation (PLD).

I-Epitaxy iyisixhumanisi esibucayi kakhulu embonini yonke. Ngokukhula kwezendlalelo ze-GaN epitaxial kuma-semi-insulating silicon carbide substrates, ama-wafers e-GaN epitaxial asekelwe ku-silicon carbide akhiqizwa, angenziwa ngokuqhubekayo abe amadivaysi e-GaN RF njengama-high electron mobility transistors (HEMTs);

Ngokukhulisa ungqimba we-silicon carbide epitaxial ku-conductive substrate ukuze uthole i-silicon carbide epitaxial wafer, kanye nongqimba lwe-epitaxial ekwakhiweni kwama-Schottky diode, ama-transistors omphumela wegolide we-oxygen half-field effect, insulated gate bipolar transistors namanye amadivaysi amandla, ukuze izinga i-epitaxial ekusebenzeni kwedivayisi inomthelela omkhulu kakhulu ekuthuthukisweni kwemboni nayo idlala indima ebaluleke kakhulu.