Isithando Sokukhulisa Ikristalu Se-SiC esingu-4inch 6inch 8inch senqubo ye-CVD

Isithando Sokukhulisa Ikristalu Se-SiC esingu-4inch esingu-6inch esingu-8inch senqubo ye-CVD Isithombe Esivelele

Incazelo emfushane:

Uhlelo lwe-XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition lusebenzisa ubuchwepheshe obuhamba phambili emhlabeni bokufaka umhwamuko wamakhemikhali, oluklanyelwe ngqo ukukhula kwekristalu elilodwa le-SiC elisezingeni eliphezulu. Ngokulawula okunembile kwamapharamitha enqubo kufaka phakathi ukugeleza kwegesi, izinga lokushisa kanye nengcindezi, lwenza ukukhula kwekristalu le-SiC okulawulwayo kuma-substrate angu-4-8 intshi. Lolu hlelo lwe-CVD lungakhiqiza izinhlobo ezahlukene zekristalu le-SiC kufaka phakathi uhlobo lwe-4H/6H-N kanye nohlobo lokufaka i-insulating lwe-4H/6H-SEMI, lunikeze izixazululo eziphelele kusukela kumishini kuya ezinqubweni. Uhlelo lusekela izidingo zokukhula kwama-wafer angu-2-12 intshi, okwenza lufaneleke kakhulu ekukhiqizweni okukhulu kwama-electronics kagesi namadivayisi e-RF.

Sithumelele i-imeyili

Izici

Isimiso Sokusebenza

Isimiso esiyinhloko sohlelo lwethu lwe-CVD sihilela ukubola kokushisa kwamagesi angaphambi kwe-silicon (isb., i-SiH4) kanye ne-carbon-containing (isb., i-C3H8) emazingeni okushisa aphezulu (ngokuvamile angu-1500-2000°C), okufaka amakristalu angawodwa e-SiC kuma-substrates ngokusebenzisa ukusabela kwamakhemikhali esigaba segesi. Lobu buchwepheshe bufaneleka kakhulu ekukhiqizeni ubumsulwa obuphezulu (>99.9995%) amakristalu angawodwa angu-4H/6H-SiC anobuningi obuphansi besici (<1000/cm²), ahlangabezana nezidingo zezinto eziqinile zama-electronics kagesi kanye namadivayisi e-RF. Ngokulawula okunembile ukwakheka kwegesi, izinga lokugeleza kanye ne-gradient yokushisa, uhlelo lwenza kube nokulawulwa okunembile kohlobo lwe-crystal conductivity (uhlobo lwe-N/P) kanye nokumelana.

Izinhlobo Zesistimu kanye Nezipharamitha Zobuchwepheshe

Uhlobo Lwesistimu	Ibanga Lokushisa	Izici Eziyinhloko	Izicelo
I-CVD Esezingeni Eliphezulu	1500-2300°C	Ukushisa kwe-graphite induction, ukufana kwezinga lokushisa le-±5°C	Ukukhula kwekristalu ye-SiC ngobuningi
I-Hot-Filament CVD	800-1400°C	Ukushisa kwe-tungsten filament, izinga lokufakwa kwe-10-50μm/h	I-epitaxy ejiyile ye-SiC
I-VPE CVD	1200-1800°C	Ukulawulwa kokushisa kwezindawo eziningi, ukusetshenziswa kwegesi okungu-80%	Ukukhiqizwa kwe-epi-wafer enkulu
I-PECVD	400-800°C	I-Plasma ithuthukisiwe, izinga lokufakwa kwe-1-10μm/h	Amafilimu amancane e-SiC asezingeni eliphansi

Izici Eziyinhloko Zobuchwepheshe

1. Uhlelo Lokulawula Izinga Lokushisa Elithuthukisiwe
Isithando somlilo sinesistimu yokushisa enezindawo eziningi ekwazi ukugcina amazinga okushisa afinyelela ku-2300°C kanye nokufana okungu-±1°C kulo lonke igumbi lokukhula. Lokhu kuphathwa kokushisa okunembile kufezwa ngokuthi:
Izindawo zokushisa eziyi-12 ezilawulwa ngokuzimela.
Ukuqapha kwe-thermocouple okungapheli (Uhlobo C W-Re).
Ama-algorithm okulungisa iphrofayili yokushisa ngesikhathi sangempela.
Izindonga zegumbi ezipholiswe ngamanzi zokulawula ukuthambekela kokushisa.

2. Ukulethwa Kwegesi Nobuchwepheshe Bokuxuba
Uhlelo lwethu lokusabalalisa igesi oluzimele luqinisekisa ukuxubana okuhle kakhulu kanye nokulethwa okufanayo:
Izilawuli zokugeleza kobuningi ezinokunemba okungu-±0.05scm.
I-multi-point gas injection manifold.
Ukuqapha ukwakheka kwegesi ngaphakathi (i-FTIR spectroscopy).
Isinxephezelo sokugeleza okuzenzakalelayo ngesikhathi somjikelezo wokukhula.

3. Ukuthuthukiswa Kwekhwalithi Yekristalu
Uhlelo luhlanganisa izinto ezintsha eziningana ukuthuthukisa ikhwalithi yekristalu:
Isibambi se-substrate esijikelezayo (esihlelekayo esingu-0-100rpm).
Ubuchwepheshe obuthuthukisiwe bokulawula ungqimba lwemingcele.
Uhlelo lokuqapha amaphutha angaphakathi (ukusabalala kwe-laser ye-UV).
Isinxephezelo sokucindezeleka okuzenzakalelayo ngesikhathi sokukhula.

4. Ukuzenzakalela Kwenqubo Nokulawula
Ukwenziwa kweresiphi okuzenzakalelayo ngokuphelele.
Ukuthuthukiswa kwe-AI yepharamitha yokukhula ngesikhathi sangempela.
Ukuqapha nokuxilonga okukude.
Ukufakwa kwedatha kwamapharamitha angaphezu kuka-1000 (kugcinwe iminyaka emi-5).

5. Izici Zokuphepha Nokuthembeka
Ukuvikelwa kokushisa okweqile okuphindwe kathathu.
Uhlelo lokuhlanza oluphuthumayo oluzenzakalelayo.
Umklamo wesakhiwo olinganiselwe yi-seismic.
Isiqinisekiso sesikhathi sokusebenza esingu-98.5%.

6. Ukwakhiwa Okungakhula Kakhulu
Umklamo we-Modular uvumela ukuthuthukiswa komthamo.
Iyahambisana nosayizi we-wafer ongama-100mm kuya ku-200mm.
Isekela kokubili ukucushwa okuqondile nokuvundlile.
Izingxenye zokushintsha okusheshayo zokulungisa.

7. Ukusebenza Kahle Kwamandla
Ukusetshenziswa kwamandla okuphansi ngo-30% kunezinhlelo ezifanayo.
Uhlelo lokubuyisa ukushisa lubamba ukushisa okungcolile okungu-60%.
Ama-algorithm okusetshenziswa kwegesi alungiselelwe.
Izidingo zesikhungo ezihambisana ne-LEED.

8. Ukuguquguquka Kwezinto Ezibonakalayo
Ikhulisa zonke izinhlobo ezinkulu ze-SiC (4H, 6H, 3C).
Isekela kokubili izinhlobo eziqhubayo kanye nezivikelayo.
Ivumela izinhlelo ezahlukene zokusebenzisa izidakamizwa (uhlobo lwe-N, uhlobo lwe-P).
Iyahambisana nezinye izinto ezingaphambili (isb., i-TMS, i-TES).

9. Ukusebenza Kohlelo Lokuhlanza I-Vacuum
Ingcindezi eyisisekelo: <1×10⁻⁶ I-Torr
Izinga lokuvuza: <1×10⁻⁹ I-Torr·L/sec
Isivinini sokupompa: 5000L/s (ye-SiH₄)

Ukulawula ingcindezi okuzenzakalelayo ngesikhathi somjikelezo wokukhula
Lokhu kuchazwa kobuchwepheshe okuphelele kubonisa ikhono lohlelo lwethu lokukhiqiza amakristalu e-SiC asezingeni locwaningo kanye nekhwalithi yokukhiqiza ngokuhambisana kanye nokukhiqiza okuhamba phambili embonini. Ukuhlanganiswa kokulawula okunembile, ukuqapha okuthuthukisiwe, kanye nobunjiniyela obuqinile kwenza lolu hlelo lwe-CVD lube yisinqumo esifanele kokubili izinhlelo zokusebenza zocwaningo kanye nokuthuthukiswa kanye nokukhiqiza umthamo kuma-elekthronikhi kagesi, amadivayisi e-RF, kanye nezinye izinhlelo zokusebenza ze-semiconductor ezithuthukisiwe.

Izinzuzo Eziyinhloko

1. Ukukhula Kwekristalu Okusezingeni Eliphezulu
• Ubuningi obuphelele obungaphansi kuka-<1000/cm² (4H-SiC)
• Ukufana kwe-doping <5% (ama-wafer angu-6 intshi)
• Ubumsulwa bekristalu >99.9995%

2. Amandla Okukhiqiza Osayizi Omkhulu
• Isekela ukukhula kwe-wafer okungamasentimitha angu-8
• Ukufana kobubanzi >99%
• Ukwehluka kobukhulu <±2%

3. Ukulawulwa Kwenqubo Okunembile
• Ukunemba kokulawula izinga lokushisa ±1°C
• Ukunemba kokulawula ukugeleza kwegesi ±0.1scm
• Ukunemba kokulawula ingcindezi ±0.1Torr

4. Ukusebenza Kahle Kwamandla
• Indlela eyonga amandla ngo-30% kunezindlela ezivamile
• Izinga lokukhula lifinyelela ku-50-200μm/h
• Isikhathi sokusebenza kwemishini >95%

Izinhlelo Zokusebenza Eziyinhloko

1. Amadivayisi kagesi kagesi
Ama-substrate angu-6-intshi angu-4H-SiC ama-MOSFET/diode angu-1200V+, okunciphisa ukulahlekelwa kokushintsha ngo-50%.

2. Ukuxhumana kwe-5G
Ama-substrate e-SiC angenawo umswakama (ukumelana >10⁸Ω·cm) kwama-PA esiteshi esiyisisekelo, ngokulahlekelwa kokufakwa <0.3dB ku->10GHz.

3. Izimoto Ezintsha Zamandla
Amamojula kagesi e-SiC ebanga lezimoto andisa ububanzi be-EV ngo-5-8% futhi anciphisa isikhathi sokushaja ngo-30%.

4. Ama-inverter e-PV
Ama-substrate anesici esincane akhulisa ukusebenza kahle kokuguqulwa okungaphezu kuka-99% ngenkathi enciphisa usayizi wesistimu ngo-40%.

Izinsizakalo ze-XKH

1. Izinsizakalo Zokwenza Ngokwezifiso
Izinhlelo ze-CVD ezingamasentimitha angu-4-8 ezilungiselelwe wena.
Isekela ukukhula kohlobo lwe-4H/6H-N, uhlobo lwe-4H/6H-SEMI insulation, njll.

2. Usekelo Lobuchwepheshe
Ukuqeqeshwa okuphelele kokusebenza kanye nokwenza ngcono izinqubo.
Impendulo yobuchwepheshe engu-24/7.

3. Izixazululo ze-Turnkey
Izinsizakalo ezivela ekugcineni kuya ekugcineni kusukela ekufakweni kuya ekuqinisekisweni kwenqubo.

4. Ukunikezwa Kwezinto Ezibalulekile
Ama-substrate e-SiC angu-2-12 intshi/ama-epi-wafer ayatholakala.
Isekela izinhlobo ze-polytype ze-4H/6H/3C.

Izinto ezihlukanisayo ezibalulekile zifaka:
Amandla okukhula kwekristalu angafika ku-8 intshi.
Izinga lokukhula okusheshayo ngama-20% kunesilinganiso semboni.
Ukuthembeka kohlelo okungu-98%.
Iphakheji ephelele yohlelo lokulawula oluhlakaniphile.