4inch 6inch 8inch SiC Crystal Growth Furnace Yenqubo ye-CVD

Incazelo emfushane:

Isistimu ye-XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition isebenzisa ubuchwepheshe bokufakwa kwamakhemikhali amakhemikhali ahamba phambili emhlabeni, obuklanyelwe ngokukhethekile ukukhula kwekristalu eyodwa ye-SiC. Ngokulawula okunembile kwamapharamitha wenqubo okuhlanganisa ukugeleza kwegesi, izinga lokushisa nokucindezela, kunika amandla ukukhula kwekristalu ye-SiC elawulwayo kuma-substrates angu-4-8 inch. Lolu hlelo lwe-CVD lungakhiqiza izinhlobo ezahlukene zekristalu ye-SiC okuhlanganisa uhlobo lwe-4H/6H-N kanye nohlobo lwe-insulating engu-4H/6H-SEMI, lunikeze izixazululo eziphelele kusukela kumishini kuya ezinqubweni. Uhlelo lusekela izidingo zokukhula zama-wafers angama-intshi angu-2-12, okulwenza lufaneleke ngokukhethekile ukukhiqizwa ngobuningi bamandla kagesi kanye namadivayisi e-RF.

Thumela i-imeyili kithi

Izici

Isimiso Sokusebenza

Umgomo oyinhloko wesistimu yethu ye-CVD uhilela ukubola okushisayo kwe-silicon-containing (isb, i-SiH4) kanye ne-carbon-containing (isb, i-C3H8) yamagesi angaphambili emazingeni okushisa aphezulu (imvamisa engu-1500-2000 ° C), ukufaka amakristalu e-SiC eyodwa kuma-substrates ngokusebenzisa ukusabela kwamakhemikhali wesigaba segesi. Lobu buchwepheshe bufaneleka ngokukhethekile ukukhiqiza ukuhlanzeka okuphezulu (>99.9995%) amakristalu angawodwa angu-4H/6H-SiC anesici esiphansi sokuminyana (<1000/cm²), ahlangabezana nezidingo eziqinile zezinto zikagesi namadivayisi e-RF. Ngokulawula okunembile kokwakheka kwegesi, izinga lokugeleza kanye ne-gradient yezinga lokushisa, isistimu inika amandla ukulawulwa okunembile kohlobo lwe-crystal conductivity (uhlobo lwe-N/P) kanye nokumelana.

Izinhlobo Zesistimu kanye Nemingcele Yezobuchwepheshe

Uhlobo Lwesistimu	Izinga Lokushisa	Izici Eziyinhloko	Izinhlelo zokusebenza
Ikhwalithi ephezulu ye-CVD	1500-2300°C	Ukushisisa kwe-graphite, ukufana kwezinga lokushisa okungu-±5°C	Ukukhula kwekristalu ye-Bulk SiC
I-Hot-Filament CVD	800-1400°C	Ukushisisa kwe-Tungsten filament, izinga lokubeka elingu-10-50μm/h	I-epitaxy enkulu ye-SiC
I-VPE CVD	1200-1800°C	Ukulawula izinga lokushisa ezindaweni eziningi, > 80% ukusetshenziswa kwegesi	Ukukhiqizwa kwe-epi-wafer enkulu
I-PECVD	400-800°C	I-Plasma ithuthukisiwe, izinga lokumiswa elingu-1-10μm/h	Amafilimu amancane e-SiC anezinga eliphansi

Izimpawu Zezobuchwepheshe Ezibalulekile

1. Isistimu Yokulawula Izinga lokushisa Ethuthukisiwe
Isithando somlilo sinesistimu yokushisisa enezizoni eziningi ekwazi ukugcina izinga lokushisa lifika ku-2300°C ngokufana okungu-±1°C kulo lonke igumbi lokukhula. Lokhu kulawulwa kwe-thermal okunembayo kufinyelelwa ngokusebenzisa:
Izindawo zokufudumeza ezilawulwa ngokuzimela eziyi-12.
I-Redundant thermocouple monitoring (Uhlobo C W-Re).
Ama-algorithms okulungiswa kwephrofayela eshisayo yesikhathi sangempela.
Izindonga zegumbi ezipholiswe ngamanzi zokulawula ukuthambekela okushisayo.

2. Ukulethwa Kwegesi Nokuxuba Ubuchwepheshe
Uhlelo lwethu lobunikazi lokusabalalisa igesi luqinisekisa ukuxutshwa kwesandulela nokulethwa okufanayo:
Izilawuli zokugeleza okukhulu ezinokunemba okungu-±0.05sccm.
Umjovo wegesi enamaphuzu amaningi.
I-in-situ gas composition monitoring (FTIR spectroscopy).
Isinxephezelo sokugeleza okuzenzakalelayo phakathi nemijikelezo yokukhula.

3. Ukuthuthukiswa Kwekhwalithi Ye-Crystal
Uhlelo luhlanganisa izinto ezintsha ezimbalwa zokuthuthukisa ikhwalithi yekristalu:
Isibambi se-substrate esijikelezayo (0-100rpm kuyahleleka).
Ubuchwepheshe obuthuthukisiwe bokulawula isendlalelo somngcele.
Uhlelo lokuqapha ukukhubazeka kwe-in-situ (ukuhlakazeka kwe-UV laser).
Isinxephezelo sokucindezeleka esizenzakalelayo phakathi nokukhula.

4. Inqubo yokuzenzakalela nokulawula
Ukwenziwa kweresiphi okuzenzakalelayo ngokugcwele.
Ukuthuthukiswa kwepharamitha yesikhathi sangempela ye-AI.
Ukuqapha okukude nokuxilongwa.
1000+ ipharamitha yokungena kwedatha (egcinwe iminyaka emi-5).

5. Izici Zokuphepha Nokwethenjelwa
Ukuvikelwa kwezinga lokushisa elingaphezu kokuphindwe kathathu.
Isistimu yokuhlanza izimo eziphuthumayo ezizenzakalelayo.
Idizayini yesakhiwo esilinganiselwe ngokuzamazama komhlaba.
98.5% isiqinisekiso sokuphumula.

6. I-Scalable Architecture
Idizayini ye-modular ivumela ukuthuthukiswa kwamandla.
Ihambisana nosayizi we-wafer ongu-100mm kuya ku-200mm.
Isekela kokubili ukucupha okuqondile nokuvundlile.
Izingxenye zokushintsha ngokushesha ukuze zilungiswe.

7. Ukuphumelela Kwamandla
Ukusetshenziswa kwamandla okuphansi ngo-30% kunezinhlelo ezifanayo.
Isistimu yokubuyisela ukushisa ithatha u-60% wokushisa kwemfucuza.
I-algorithms yokusetshenziswa kwegesi elungiselelwe.
Izidingo zesikhungo esithobela i-LEED.

8. I-Material Versatility
Ikhula wonke ama-SiC polytypes amakhulu (4H, 6H, 3C).
Isekela kokubili okuhlukile kwe-conductive kanye ne-semi-insulating.
Ivumela izikimu ezihlukahlukene ze-doping (uhlobo lwe-N, uhlobo lwe-P).
Ihambisana nezinye izandulela (isb., TMS, TES).

9. Ukusebenza Kwesistimu Yevacuum
Ingcindezi eyisisekelo: <1×10⁻⁶ Torr
Izinga lokuvuza: <1×10⁻⁹ Torr·L/sec
Isivinini sokumpompa: 5000L/s (ye-SiH₄)

Ukulawula ukucindezela okuzenzakalelayo phakathi nemijikelezo yokukhula
Lokhu kucaciswa okubanzi kobuchwepheshe kubonisa amandla esistimu yethu okukhiqiza amakristalu e-SiC ezinga locwaningo kanye nekhwalithi yokukhiqiza enokuqina okuhamba phambili embonini kanye nesivuno. Inhlanganisela yokulawula ukunemba, ukuqapha okuthuthukisiwe, nobunjiniyela obuqinile benza lolu hlelo lwe-CVD lube yisinqumo esifanele kukho kokubili i-R&D nezinhlelo zokusebenza zokukhiqiza ivolumu kugesi wamandla, amadivaysi e-RF, nezinye izinhlelo zokusebenza ezithuthukisiwe ze-semiconductor.

Izinzuzo Eziyinhloko

1. Ukukhula Kwekristalu Yekhwalithi Ephezulu
• Ukuminyana kokukhubazeka kuphansi njengo-<1000/cm² (4H-SiC)
• Ukufana kwe-Doping <5% (ama-wafers amayintshi angu-6)
• I-Crystal purity >99.9995%

2. Amandla Okukhiqiza Okukhulu
• Isekela ukukhula kwewafer okungafika kumayintshi angu-8
• Ukufana kobubanzi >99%
• Ukuhlukahluka kokuqina <±2%

3. Ukulawulwa Kwenqubo Okunembile
• Ukunemba kokulawula izinga lokushisa ±1°C
• Ukunemba kokulawula ukugeleza kwegesi ±0.1sccm
• Ukunemba kokulawula ukucindezela ±0.1Torr

4. Ukuphumelela Kwamandla
• ukonga amandla ngo-30% kunezindlela ezijwayelekile
• Izinga lokukhula lifika ku-50-200μm/h
• Isikhathi sokusebenza kwezisetshenziswa >95%

Izinhlelo zokusebenza ezibalulekile

1. Amadivayisi kagesi kagesi
Ama-substrates angu-6-inch 4H-SiC we-1200V+ MOSFETs/diode, ehlisa ukulahlekelwa kokushintsha ngo-50%.

2. Ukuxhumana kwe-5G
Ama-Semi-insulating SiC substrates (ukumelana >10⁸Ω·cm) kuma-PAs esiteshi esiyisisekelo, ngokulahleka kokufakwa okungu-<0.3dB kokuthi >10GHz.

3. Izimoto Ezintsha Zamandla
Amamojula wamandla e-SiC ebanga lezimoto andisa ububanzi be-EV ngo-5-8% futhi anciphisa isikhathi sokushaja ngo-30%.

4. Iziguquli ze-PV
Ama-substrates anesici esiphansi athuthukisa ukusebenza kahle kokuguqulwa ukudlula u-99% kuyilapho ehlisa usayizi wesistimu ngo-40%.

Izinkonzo ze-XKH

1. Amasevisi Okwenza ngokwezifiso
Amasistimu we-CVD angu-4-8 inch.
Isekela ukukhula kohlobo lwe-4H/6H-N, uhlobo lwe-insulating 4H/6H-SEMI, njll.

2. Ukusekelwa Kwezobuchwepheshe
Ukuqeqeshwa okuphelele kokusebenza kanye nokwenza ngcono inqubo.
24/7 impendulo yobuchwepheshe.

3. Turnkey Solutions
Izinsizakalo zokuphela-kuya-ekupheleni kusukela ekufakweni kuya ekucubungulweni kokuqinisekisa.

4. Ukunikezwa Kwempahla
2-12 inch SiC substrates/epi-wafers ayatholakala.
Isekela 4H/6H/3C polytypes.

Izihlukanisi eziyinhloko zihlanganisa:
Kufikela ku-8-intshi amandla okukhula kwekristalu.
Izinga lokukhula okusheshayo elingu-20% kunesilinganiso semboni.
98% ukwethembeka kwesistimu.
Iphakheji yesistimu yokulawula ehlakaniphile.