I-4H-N Dia205mm imbewu ye-SiC evela e-China P kanye ne-D grade Monocrystaline

Indlela ye-PVT (Physical Vapor Transport) iyindlela evamile esetshenziselwa ukukhulisa ikristalu eyodwa ye-silicon carbide. Enqubweni yokukhula ye-PVT, i-silicon carbide single crystal material ifakwa ngokuhwamuka komzimba kanye nokuthutha okugxile kumakristalu embewu ye-silicon carbide, ukuze amakristalu amasha e-silicon carbide akhule eduze kwesakhiwo samakristalu embewu.

Ngendlela ye-PVT, i-silicon carbide seed crystal idlala indima ebalulekile njengendawo yokuqala nesifanekiso sokukhula, ithonya ikhwalithi nokwakheka kwekristalu eyodwa yokugcina. Ngesikhathi senqubo yokukhula ye-PVT, ngokulawula imingcele efana nokushisa, ukucindezela kanye nokwakheka kwesigaba segesi, ukukhula kwe-silicon carbide amakristalu angama-single kungabonakala ukuze kwakhiwe usayizi omkhulu, izinto eziphezulu ze-single-crystal.

Inqubo yokukhula egxile kumakristalu embewu ye-silicon carbide ngendlela ye-PVT ibaluleke kakhulu ekukhiqizweni kwekristalu eyodwa ye-silicon carbide, futhi idlala indima ebalulekile ekutholeni izinto ezisezingeni eliphezulu, ezinosayizi omkhulu we-silicon carbide single-crystal.

Ikristalu ye-SiCseed engu-8inch esiyinikezayo ayitholakali kakhulu emakethe njengamanje. Ngenxa yobunzima bobuchwepheshe obuphezulu, iningi lezimboni azikwazi ukuhlinzeka ngamakristalu embewu anosayizi omkhulu. Nokho, ngenxa yobudlelwano bethu obude nobuseduze nemboni yaseChina ye-silicon carbide, singanikeza amakhasimende ethu lesi sinkwa sembewu se-silicon carbide esingu-8-intshi. Uma unezidingo, sicela ukhululeke ukuxhumana nathi. Singabelana ngezicaciso nawe kuqala.