4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
Izinhlelo zokusebenza
● I-substrate yokukhula yezinhlanganisela ze-III-V ne-II-VI.
● Ugesi kanye ne-optoelectronics.
● Izinhlelo zokusebenza ze-IR.
● I-Silicon On Sapphire Integrated Circuit(SOS).
● I-Radio Frequency Integrated Circuit(RFIC).
Emkhiqizweni we-LED, ama-wafers esafire asetshenziswa njenge-substrate yokukhula kwamakristalu e-gallium nitride (GaN), akhipha ukukhanya lapho kusetshenziswa umsinga kagesi. I-Sapphire iyinto efanelekile ye-substrate yokukhula kwe-GaN ngenxa yokuthi inokwakheka kwekristalu okufanayo kanye ne-coefficient yokwandisa okushisayo ku-GaN, enciphisa ukonakala futhi ithuthukise ikhwalithi yekristalu.
Kuma-optics, ama-wafer esafire asetshenziswa njengamafasitela namalensi ezindaweni ezinomfutho ophezulu kanye nezinga lokushisa eliphezulu, kanye nasezinhlelweni ze-imaging ye-infrared, ngenxa yokucaca kwawo okuphezulu nobulukhuni.
Ukucaciswa
Into | 4-intshi C-indiza(0001) 650μm Sapphire Wafers | |
I-Crystal Materials | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
Ibanga | Prime, Epi-Ready | |
I-Surface Orientation | I-C-plane(0001) | |
Indiza ye-C-engeli ebheke ku-M-eksisi 0.2 +/- 0.1° | ||
Ububanzi | 100.0 mm +/- 0.1 mm | |
Ubukhulu | 650 μm +/- 25 μm | |
Isisekelo se-Flat Orientation | Indiza(11-20) +/- 0.2° | |
Ubude Befulethi obuyisisekelo | 30.0 mm +/- 1.0 mm | |
Uhlangothi Olulodwa Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
(SSP) | Indawo Engemuva | Umhlabathi omuhle, uRa = 0.8 μm kuya ku-1.2 μm |
Uhlangothi Olukabili Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
(DSP) | Indawo Engemuva | I-Epi-polished, Ra <0.2 nm (by AFM) |
I-TTV | < 20 μm | |
KHOTHAMA | < 20 μm | |
I-WARP | < 20 μm | |
Ukuhlanza / Ukupakisha | Ukuhlanza igumbi lokuhlanza le-Class 100 kanye nokupakishwa kwe-vacuum, | |
Izingcezu ezingama-25 ephaketheni lekhasethi elilodwa noma ephaketheni lesiqephu esisodwa. |
Ukupakisha Nokuthumela
Ngokuvamile, sinikeza iphakheji ngebhokisi lekhasethi elingu-25pcs; singakwazi futhi ukupakishwa ngesiqukathi esilucwecwana esisodwa esingaphansi kwegumbi lokuhlanza lebanga eliyi-100 ngokwesidingo seklayenti.