I-substrate ye-SiC engu-3 intshi Ukukhiqizwa kwe-Dia 76.2mm 4H-N

Izici eziyinhloko zama-wafers e-silicon carbide mosfet angu-3 intshi yilezi ezilandelayo;

I-Silicon Carbide (SiC) iyinto ye-semiconductor ebanzi, ebonakala ngokushisa okuphezulu, ukuhamba kwama-electron aphezulu, kanye namandla ensimu kagesi aqhekeka kakhulu. Lezi zakhiwo zenza ama-wafer e-SiC avelele ekusetshenzisweni kwamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. Ikakhulukazi ku-polytype ye-4H-SiC, isakhiwo sayo sekristalu sinikeza ukusebenza okuhle kakhulu kwe-elekthronikhi, okwenza kube yinto ekhethwayo kumadivayisi kagesi anamandla.

I-wafer ye-Silicon Carbide 4H-N engamasentimitha angu-3 iyi-wafer ene-nitrogen enomoya womoya wohlobo lwe-N. Le ndlela yomoya wo ...

I-wafer ye-Silicon Carbide 4H-N engamasentimitha angu-3 ikhiqizwa kusetshenziswa indlela ye-Physical Vapor Transport (PVT). Le nqubo ihilela ukuguqula i-SiC powder ibe amakristalu angawodwa emazingeni okushisa aphezulu, ukuqinisekisa ikhwalithi yekristalu kanye nokufana kwe-wafer. Ngaphezu kwalokho, ubukhulu be-wafer buvame ukuba cishe ngu-0.35 mm, futhi ubuso bayo bupholishwa kabili ukuze kufezwe izinga eliphezulu kakhulu lokuthamba kanye nokushelela, okubalulekile ezinqubweni zokukhiqiza ze-semiconductor ezilandelayo.

Ububanzi bokusetshenziswa kwe-wafer ye-Silicon Carbide 4H-N engamasentimitha angu-3 bukhulu kakhulu, kufaka phakathi amadivayisi kagesi anamandla aphezulu, izinzwa zokushisa okuphezulu, amadivayisi e-RF, namadivayisi e-optoelectronic. Ukusebenza kwayo okuhle kakhulu nokuthembeka kwenza la madivayisi asebenze kahle ngaphansi kwezimo ezimbi kakhulu, ahlangabezane nesidingo sezinto ze-semiconductor ezisebenza kahle embonini yesimanje ye-elekthronikhi.

Singakunikeza i-substrate ye-4H-N 3inch SiC, amazinga ahlukene ama-wafer esitokhwe se-substrate. Singahlela futhi ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela ukubuza!