3inch SiC substrate Production Dia76.2mm 4H-N

Incazelo emfushane:

I-wafer ye-Silicon Carbide 4H-N engu-3 inch iyisici esithuthukisiwe se-semiconductor, eklanyelwe ngokukhethekile ukusebenza okuphezulu kwe-electronic kanye ne-optoelectronic applications. Idume ngezici zayo ezingavamile zomzimba nezikagesi, lesi silucwecwana singenye yezinto ezibalulekile emkhakheni wezogesi zikagesi. .

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-3 inch silicon carbide mosfet wafers zimi kanje;

I-Silicon Carbide (SiC) iyimpahla ye-semiconductor ene-wide-bandgap, ebonakala ngokubamba okuphezulu kwe-thermal, ukuhamba kwe-electron ephezulu, namandla enkundla kagesi ephukile. Lezi zakhiwo zenza ama-wafer e-SiC avelele ngamandla aphezulu, ama-high-frequency, kanye nezinhlelo zokusebenza ezishisa kakhulu. Ikakhulukazi ku-polytype ye-4H-SiC, isakhiwo sayo se-crystal sinikeza ukusebenza okuhle kakhulu kwe-elekthronikhi, okwenza kube yimpahla yokuzikhethela kumadivayisi kagesi kagesi.

Iwafa ye-Silicon Carbide 4H-N engu-3-inch iyiwafa ene-nitrogen ene-N-type conductivity. Le ndlela ye-doping inikeza i-wafer ukugxila okuphezulu kwe-electron, ngaleyo ndlela ithuthukise ukusebenza kwedivayisi. Usayizi we-wafer, ngamayintshi angu-3 (ububanzi obungu-76.2 mm), ubukhulu obuvame ukusetshenziswa embonini ye-semiconductor, efaneleka izinqubo ezihlukahlukene zokukhiqiza.

I-wafer engu-3-inch Silicon Carbide 4H-N ikhiqizwa kusetshenziswa indlela ye-Physical Vapor Transport (PVT). Le nqubo ihilela ukuguqula i-SiC powder ibe yikristalu eyodwa emazingeni okushisa aphezulu, iqinisekisa ikhwalithi yekristalu nokufana kwe-wafer. Ukwengeza, ubukhulu be-wafer ngokuvamile buba ngu-0.35 mm, futhi indawo yayo ingaphansi kokupholishwa okukabili ukuze kuzuzwe izinga eliphezulu kakhulu lokucaba nokushelela, okubalulekile ezinqubweni zokukhiqiza ezilandelayo ze-semiconductor.

Ibanga lesicelo le-wafer ye-Silicon Carbide 4H-N engu-3-inch likhulu, kuhlanganise nezinto zikagesi ezinamandla amakhulu, izinzwa ezishisa kakhulu, amadivaysi e-RF, namadivayisi e-optoelectronic. Ukusebenza kwayo okuhle kakhulu nokuthembeka kwenza lawa madivaysi asebenze ngokuzinza ngaphansi kwezimo ezimbi kakhulu, ahlangabezana nesidingo sezinto ezisebenza kahle ze-semiconductor embonini yesimanje ye-elekthronikhi.

Singahlinzeka nge-4H-N 3inch SiC substrate, amamaki ahlukene amawafa esitokwe angaphansi. Futhi singahlela ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela uphenyo!