I-2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Isithombe Esifakiwe se-SiC ingot esingu-2 intshi Dia50.8mmx10mmt 4H-N monocrystal

Incazelo emfushane:

Ingot ye-SiC (i-silicon carbide) engamasentimitha angu-2 ibhekisela kukristalu elilodwa le-silicon carbide eliyindilinga noma elinomumo webhulokhi elinobubanzi noma ubude bomphetho obungamasentimitha angu-2. Ama-ingot e-silicon carbide asetshenziswa njengezinto zokuqala zokukhiqiza amadivayisi ahlukahlukene e-semiconductor, njengamadivayisi kagesi anamandla namadivayisi e-optoelectronic.

Sithumelele i-imeyili

Izici

Ubuchwepheshe Bokukhula Kwekristalu le-SiC

Izici ze-SiC zenza kube nzima ukukhulisa amakristalu angawodwa. Lokhu kungenxa yokuthi ayikho ingxenye yoketshezi enesilinganiso se-stoichiometric se-Si: C = 1: 1 ekucindezelweni komoya, futhi akunakwenzeka ukukhulisa i-SiC ngezindlela zokukhula ezivuthiwe, njengendlela yokudweba eqondile kanye nendlela yokuwa kwe-crucible, okuyizinto eziyinhloko embonini ye-semiconductor. Ngokwethiyori, ikhambi elinesilinganiso se-stoichiometric se-Si: C = 1: 1 lingatholakala kuphela uma ingcindezi inkulu kune-10E5atm futhi izinga lokushisa liphakeme kune-3200℃. Njengamanje, izindlela ezijwayelekile zifaka phakathi indlela ye-PVT, indlela yesigaba soketshezi, kanye nendlela yokufaka amakhemikhali esigaba sokushisa esiphezulu.

Ama-wafer namakristalu e-SiC esiwahlinzekayo akhuliswa kakhulu nge-physical vapor transport (PVT), futhi okulandelayo yisingeniso esifushane se-PVT:

Indlela yokuthutha ngomusi ongokoqobo (i-PVT) yasungulwa enkambisweni yokunciphisa igesi ngesigaba segesi eyasungulwa nguLely ngo-1955, lapho i-SiC powder ifakwa khona epayipini le-graphite bese ishiswa kuze kufike ekushiseni okuphezulu ukuze i-SiC powder ibole futhi incibilike, bese kuthi ipayipi le-graphite liphole, bese izingxenye ze-SiC powder ezibolile zibekwe futhi zicwebezelwe njengamakristalu e-SiC endaweni ezungezile yepayipi le-graphite. Nakuba le ndlela inzima ukuthola amakristalu amakhulu e-SiC single futhi inqubo yokufaka ngaphakathi kwepayipi le-graphite inzima ukuyilawula, inikeza imibono kubacwaningi abalandelayo.

U-YM Tairov nabanye eRussia bethula umqondo wekristalu yembewu ngalesi sisekelo, okwaxazulula inkinga yokuma kwekristalu okungalawuleki kanye nesimo se-nucleation samakristalu e-SiC. Abacwaningi abalandelayo baqhubeka nokuthuthukisa futhi ekugcineni bathuthukisa indlela yokudlulisa umhwamuko womzimba (i-PVT) esetshenziswa ezimbonini namuhla.

Njengendlela yokuqala yokukhulisa ikristalu ye-SiC, i-PVT njengamanje iyindlela yokukhulisa evame kakhulu yamakristalu e-SiC. Uma kuqhathaniswa nezinye izindlela, le ndlela inezidingo eziphansi zemishini yokukhulisa, inqubo yokukhula elula, ukulawula okuqinile, intuthuko ephelele kanye nocwaningo, futhi isivele ithuthukiswe ngezimboni.