2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Incazelo emfushane:

I-SiC (i-silicon carbide) ingot engu-2-intshi ibhekisela kukristalu olulodwa oluyisilinda noma olumise okwebhulokhi ye-silicon carbide enobubanzi noma ubude obungamayintshi angu-2. Ama-ingots e-silicon carbide asetshenziswa njengento yokuqala ukukhiqizwa kwemishini ehlukahlukene ye-semiconductor, njengamadivayisi kagesi kagesi kanye namadivayisi we-optoelectronic.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC Crystal Growth Technology

Izici ze-SiC zenza kube nzima ukukhulisa amakristalu awodwa. Lokhu ikakhulukazi ngenxa yokuthi asikho isigaba se-liquid esine-stoichiometric ratio ye-Si : C = 1: 1 ekucindezelweni komkhathi, futhi akunakwenzeka ukukhulisa i-SiC ngezindlela zokukhula ezivuthiwe, njengendlela yokudweba eqondile kanye indlela ye-crucible falling, okuyizinsika zemboni ye-semiconductor. Ngokweqile, isixazululo esinesilinganiso se-stoichiometric sika-Si : C = 1: 1 singatholakala kuphela uma ukucindezela kukhulu kune-10E5atm futhi izinga lokushisa lingaphezu kuka-3200℃. Njengamanje, izindlela ezijwayelekile zifaka indlela ye-PVT, indlela yesigaba se-liquid, kanye nendlela yokubeka amakhemikhali ezinga lokushisa eliphezulu lomhwamuko.

Ama-wafer e-SiC namakristalu esiwahlinzekayo akhuliswa kakhulu yi-physical vapor transport (PVT), futhi okulandelayo yisingeniso esifushane se-PVT:

Indlela ye-Physical vapor transport (PVT) isuka kubuchule be-gas-phase sublimation eyasungulwa ngu-Lely ngo-1955, lapho i-SiC powder ifakwa epayipini le-graphite futhi ishiselwe ezingeni lokushisa eliphezulu ukuze i-SiC powder ibole futhi i-sublimate, bese kuba i-graphite. i-tube ipholiswe phansi, futhi izingxenye zesigaba segesi ezibolile ze-SiC powder zifakwa futhi zicwebezeliswe njengamakristalu e-SiC endaweni ezungezile yeshubhu ye-graphite. Nakuba le ndlela inzima ukuthola amakristalu angama-SiC angamasayizi amakhulu futhi inqubo yokubeka ngaphakathi kwe-graphite tube inzima ukuyilawula, inikeza imibono kubacwaningi abalandelayo.

U-YM Tairov et al. eRussia wethula umqondo we-crystal imbewu ngalesi sisekelo, okuxazulule inkinga yesimo se-crystal esingalawuleki kanye nesimo se-nucleation yamakristalu e-SiC. Abacwaningi abalandelayo baqhubeka nokuthuthuka futhi ekugcineni bathuthukisa indlela yokudlulisa umhwamuko obonakalayo (PVT) esetshenziswa ezimbonini namuhla.

Njengendlela yakuqala yokukhula yekristalu ye-SiC, i-PVT njengamanje iyindlela yokukhula evamile yamakristalu e-SiC. Uma kuqhathaniswa nezinye izindlela, le ndlela inezidingo eziphansi zemishini yokukhula, inqubo yokukhula elula, ukulawuleka okuqinile, ukuthuthukiswa okuphelele kanye nocwaningo, futhi isivele yenziwe yizimboni.