200mm SiC substrate dummy grade 4H-N 8inch SiC wafer
Izinkinga zobuchwepheshe zokukhiqizwa kwe-substrate ye-SiC engu-8 intshi zifaka:
I-1.Crystal Growth: Ukuthola ukukhula kwe-crystal eyodwa yekhwalithi ephezulu ye-silicon carbide ngamadayimitha amakhulu kungaba inselele ngenxa yokulawula ukukhubazeka nokungcola.
2.Ukucutshungulwa kwe-wafer: Usayizi omkhulu wama-wafers angu-8-intshi uletha izinselele mayelana nokufana kanye nokulawulwa kokukhubazeka ngesikhathi sokucutshungulwa kwe-wafer, njengokupholisha, etching, kanye ne-doping.
3.I-Material Homogeneity: Ukuqinisekisa izakhiwo zempahla ezingaguquguquki kanye nokufana phakathi kwayo yonke i-substrate ye-SiC engu-8-intshi kufuna ngobuchwepheshe futhi kudinga ukulawula okunembayo phakathi nenqubo yokukhiqiza.
4.Izindleko: Ukukala kufikela ku-8-inch SiC substrates kuyilapho kugcinwa ikhwalithi ephezulu yezinto ezibonakalayo kanye nesivuno kungaba inselele ngokwezomnotho ngenxa yobunkimbinkimbi nezindleko zezinqubo zokukhiqiza.
5.Ukubhekana nalezi zinkinga zobuchwepheshe kubalulekile ekwamukelweni okusabalele kwama-SiC substrates angu-8-intshi kumandla asebenza kakhulu kanye namadivayisi e-optoelectronic.
Sihlinzeka ngama-sapphire substrates avela ezimbonini ezihamba phambili zaseChina ze-SiC okuhlanganisa ne-Tankeblue. Iminyaka engaphezu kwe-10 ye-ejensi isivumele ukuthi sigcine ubudlelwano obuseduze nemboni. Singakunikeza ama-substrates angu-6inch kanye ne-8inchSiC owadingayo ukuze uthole ukunikezwa kwesikhathi eside futhi okuzinzile kuyilapho ukunikeza amanani nentengo engcono kakhulu.
I-Tankeblue iyibhizinisi lobuchwepheshe obuphezulu eligxile ekuthuthukisweni, ekukhiqizeni nasekuthengisweni kwama-chips esizukulwane sesithathu semiconductor silicon carbide (SiC). Le nkampani ingelinye labakhiqizi abahamba phambili emhlabeni bama-wafers e-SiC.