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I-wafer ye-SiC engu-200mm eyi-dummy grade 4H-N engu-8inch SiC

I-wafer ye-SiC engu-200mm eyi-dummy grade 4H-N engu-8inch SiC Isithombe Esifakiwe
  • I-wafer ye-SiC engu-200mm eyi-dummy grade 4H-N engu-8inch SiC
  • I-wafer ye-SiC engu-200mm eyi-dummy grade 4H-N engu-8inch SiC
  • I-wafer ye-SiC engu-200mm eyi-dummy grade 4H-N engu-8inch SiC

Incazelo emfushane:

I-substrate ye-silicon carbide enobubanzi obungamasentimitha angu-8 (cishe amamilimitha angu-200). I-substrate ye-silicon carbide (SiC) iyinto ebalulekile yokukhiqiza amadivayisi kagesi namadivayisi e-optoelectronic. Ama-substrate e-SiC angu-8-intshi avame ukusetshenziselwa ukukhiqiza amadivayisi kagesi anamandla aphezulu njenge-MOSFET yamandla, ama-diode kagesi, namanye amadivayisi kagesi asebenza kahle kakhulu. Le substrate enkulu ingathuthukisa ukusebenza kahle kokukhiqiza, inciphise izindleko zokukhiqiza, futhi isize ekwenzeni amadivayisi anamandla kakhulu. Izinto ze-silicon carbide zinokuqhutshwa kokushisa okuhle kakhulu, ukumelana nokushisa okuphezulu kanye nokumelana nemisebe, okwenza kube ukukhetha okuhle kokukhiqiza amadivayisi kagesi asebenza kahle kakhulu.


Izici

Ubunzima bobuchwepheshe bokukhiqizwa kwe-substrate ye-SiC engamasentimitha angu-8 buhlanganisa:

1. Ukukhula Kwekristalu: Ukufinyelela ukukhula kwekristalu elilodwa lekhwalithi ephezulu le-silicon carbide ngobukhulu obukhulu kungaba yinselele ngenxa yokulawula amaphutha nokungcola.

2. Ukucutshungulwa Kwe-Wafer: Usayizi omkhulu wama-wafer angu-8 intshi uletha izinselele maqondana nokufana kanye nokulawula amaphutha ngesikhathi sokucubungula i-wafer, njengokupholisha, ukuqopha, kanye nokufaka i-doping.

3. Ukulingana Kwezinto Eziphathekayo: Ukuqinisekisa izakhiwo zezinto ezihambisanayo kanye nokulingana kuzo zonke izingxenye ze-SiC ezingamasentimitha angu-8 kuyadingeka ngokobuchwepheshe futhi kudinga ukulawulwa okunembile ngesikhathi senqubo yokukhiqiza.

4. Izindleko: Ukwandisa ama-substrate e-SiC angu-8-intshi ngenkathi kugcinwa ikhwalithi ephezulu yezinto zokwakha kanye nokukhiqiza kungaba yinselele kwezomnotho ngenxa yobunzima kanye nezindleko zezinqubo zokukhiqiza.

5. Ukubhekana nalezi zinkinga zobuchwepheshe kubalulekile ekwamukelweni kabanzi kwezingxenye ze-SiC ezingama-intshi angu-8 kumadivayisi asebenza kahle kakhulu kanye namadivayisi e-optoelectronic.

Sihlinzeka nge-sapphire substrates ezivela ezimbonini ze-SiC ezithumela kwamanye amazwe ezihamba phambili eShayina okuhlanganisa neTankeblue. Iminyaka engaphezu kwe-10 ye-ejensi isivumele ukuthi silondoloze ubudlelwano obuseduze nefektri. Singakunikeza i-6inch kanye ne-8inchSiC substrates oyidingayo ukuze uthole ukuphakelwa kwesikhathi eside nokuzinzile ngenkathi sinikeza intengo nentengo engcono kakhulu.

I-Tankeblue iyinkampani yobuchwepheshe obuphezulu egxile ekuthuthukisweni, ekukhiqizweni nasekuthengisweni kwama-chips e-semiconductor silicon carbide (SiC) esizukulwane sesithathu. Le nkampani ingenye yabakhiqizi abahamba phambili emhlabeni bama-wafer e-SiC.

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