Ama-wafer e-SiC angu-2 intshi angu-6H noma angu-4H angaphansi kwe-SiC anombala o-Diameter ongu-50.8mm

Incazelo emfushane:

I-Silicon carbide (i-SiC) iyinhlanganisela enama-binary yeQembu IV-IV, iyona kuphela inhlanganisela eqinile eqinile kuQembu IV leThebula Lezinto Ezinezimo Ezivamile, iyi-semiconductor ebalulekile. I-SiC inezakhiwo ezinhle kakhulu zokushisa, zemishini, zamakhemikhali kanye nezegesi, ezenza ibe enye yezinto ezinhle kakhulu zokwenza amadivayisi kagesi anokushisa okuphezulu, amaza aphezulu, kanye namandla aphezulu.

Sithumelele i-imeyili

Izici

Ukusetshenziswa kwe-substrate ye-silicon carbide

I-substrate ye-silicon carbide ingahlukaniswa ngohlobo lwe-conductive kanye nohlobo lwe-semi-insulating ngokuya ngokumelana. Amadivayisi e-silicon carbide e-conductive asetshenziswa kakhulu ezimotweni zikagesi, ekukhiqizeni ugesi we-photovoltaic, ezokuthutha ngesitimela, izikhungo zedatha, ukushaja kanye nezinye ingqalasizinda. Imboni yezimoto zikagesi inesidingo esikhulu se-substrate ye-silicon carbide e-conductive, futhi njengamanje, izinkampani zezimoto zamandla ezintsha ze-Tesla, BYD, NIO, Xiaopeng kanye nezinye izinkampani zezimoto zamandla amasha zihlele ukusebenzisa amadivayisi noma amamojula e-silicon carbide discrete.

Amadivayisi e-silicon carbide angenawo ugesi asetshenziswa kakhulu ekuxhumaneni kwe-5G, ekuxhumaneni kwezimoto, ekusetshenzisweni kwezokuvikela izwe, ekudlulisweni kwedatha, ezindiza nakwezinye izinkambu. Ngokukhulisa ungqimba lwe-gallium nitride epitaxial ku-substrate ye-silicon carbide engenawo ugesi, i-wafer ye-gallium nitride epitaxial esekwe ku-silicon ingenziwa futhi ibe amadivayisi e-microwave RF, asetshenziswa kakhulu ensimini ye-RF, njengezikhulisi zamandla ekuxhumaneni kwe-5G kanye nezitholi zomsakazo ekuvikeleni izwe.

Ukukhiqizwa kwemikhiqizo ye-silicon carbide substrate kuhilela ukuthuthukiswa kwemishini, ukuhlanganiswa kwezinto zokusetshenziswa, ukukhula kwekristalu, ukusika ikristalu, ukucubungula i-wafer, ukuhlanza nokuhlola, kanye nezinye izixhumanisi eziningi. Ngokuphathelene nezinto zokusetshenziswa, imboni ye-Songshan Boron inikeza izinto zokusetshenziswa ze-silicon carbide emakethe, futhi ithole ukuthengiswa okuncane. Izinto ze-semiconductor zesizukulwane sesithathu ezimelelwa yi-silicon carbide zidlala indima ebalulekile embonini yanamuhla, ngokusheshisa kokungena kwezimoto ezintsha zamandla kanye nezinhlelo zokusebenza ze-photovoltaic, isidingo se-silicon carbide substrate sesiseduze nokungenisa iphuzu lokushintshashintsha.