2 intshi SiC Wafers 6H noma 4H Semi-Insulating SiC Substrates Dia50.8mm

2 intshi ama-SiC Wafers 6H noma 4H Semi-Insulating SiC Substrates Dia50.8mm Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon carbide (SiC) iyinhlanganisela kanambambili yeQembu IV-IV, iyona kuphela inhlanganisela eqinile ezinzile kuQembu IV le-Periodic Table of Elements, I-semiconductor ebalulekile. I-SiC inezinto ezinhle kakhulu ezishisayo, ezomshini, amakhemikhali kanye nezikagesi, eziyenza ibe enye yezinto ezihamba phambili zokwenza amadivaysi e-electronics anezinga lokushisa eliphezulu, ama-high-frequency, namandla aphezulu.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukusetshenziswa kwe-silicon carbide substrate

I-Silicon carbide substrate ingahlukaniswa ngohlobo lwe-conductive kanye nohlobo lwe-semi-insulating ngokusho kwe-resistivity. Amadivaysi e-silicon carbide e-conductive asetshenziswa kakhulu ezimotweni zikagesi, ukukhiqiza amandla e-photovoltaic, ezokuthutha ngololiwe, izikhungo zedatha, ukushaja nezinye izingqalasizinda. Imboni yezimoto zikagesi inesidingo esikhulu sama-conductive silicon carbide substrates, futhi njengamanje, iTesla, BYD, NIO, Xiaopeng nezinye izinkampani zezimoto zamandla amasha zihlele ukusebenzisa amadivaysi noma amamojula e-silicon carbide discrete.

Imishini ye-silicon carbide e-Semi-insulated isetshenziswa kakhulu kwezokuxhumana kwe-5G, ukuxhumana kwezimoto, izinhlelo zokusebenza zokuvikela izwe, ukudluliswa kwedatha, i-aerospace neminye imikhakha. Ngokukhulisa ungqimba lwe-gallium nitride epitaxial ku-semi-insulated silicon carbide substrate, i-silicon-based gallium nitride epitaxial wafer ingenziwa futhi ibe yimishini ye-microwave RF, esetshenziswa kakhulu emkhakheni we-RF, njengezikhulisamandla ekuxhumaneni kwe-5G kanye imitshina yomsakazo ekuvikelweni kwezwe.

Ukukhiqizwa kwemikhiqizo ye-silicon carbide substrate kuhlanganisa ukuthuthukiswa kwemishini, ukuhlanganiswa kwezinto ezingavuthiwe, ukukhula kwekristalu, ukusika i-crystal, ukucubungula ama-wafer, ukuhlanza nokuhlola, nezinye izixhumanisi eziningi. Mayelana nezinto zokusetshenziswa, imboni ye-Songshan Boron ihlinzeka ngezinto zokusetshenziswa ze-silicon carbide emakethe, futhi isizuze ukuthengiswa kweqoqo elincane. Izinto ze-semiconductor yesizukulwane sesithathu ezimelelwe i-silicon carbide zidlala indima ebalulekile embonini yesimanje, ngokusheshisa ukungena kwezimoto ezintsha zamandla kanye nezicelo ze-photovoltaic, isidingo se-silicon carbide substrate sesizoletha indawo yokuguquguquka.