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I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR

I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR Isithombe Esifakiwe
  • I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
  • I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
  • I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
  • I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
  • I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR

Incazelo emfushane:

II-substrate engu-12-intshi eqhuba i-4H-SiC (i-silicon carbide)iyi-wafer ye-semiconductor enobubanzi obukhulu kakhulu eyenzelwe isizukulwane esilandelayoi-voltage ephezulu, amandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezuluukukhiqizwa kwamandla kagesi. Ukusebenzisa izinzuzo zangaphakathi ze-SiC—njengeinsimu kagesi ebaluleke kakhulu, ijubane eliphezulu lokukhukhuleka kwama-electron agcwele, ukuhanjiswa okuphezulu kokushisa, futhiukuzinza kwamakhemikhali okuhle kakhulu—le substrate ibekwe njengezinto eziyisisekelo zamapulatifomu amadivayisi kagesi athuthukile kanye nezinhlelo zokusebenza ze-wafer zendawo enkulu ezisafufusa.


Izici

Umdwebo Oningiliziwe

I-wafer engu-12-Inch engu-4H-SiC
I-wafer engu-12-Inch engu-4H-SiC

Ukubuka konke

II-substrate engu-12-intshi eqhuba i-4H-SiC (i-silicon carbide)iyi-wafer ye-semiconductor enobubanzi obukhulu kakhulu eyenzelwe isizukulwane esilandelayoi-voltage ephezulu, amandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezuluukukhiqizwa kwamandla kagesi. Ukusebenzisa izinzuzo zangaphakathi ze-SiC—njengeinsimu kagesi ebaluleke kakhulu, ijubane eliphezulu lokukhukhuleka kwama-electron agcwele, ukuhanjiswa okuphezulu kokushisa, futhiukuzinza kwamakhemikhali okuhle kakhulu—le substrate ibekwe njengezinto eziyisisekelo zamapulatifomu amadivayisi kagesi athuthukile kanye nezinhlelo zokusebenza ze-wafer zendawo enkulu ezisafufusa.

Ukubhekana nezidingo zomkhakha wonke ze-ukunciphisa izindleko kanye nokuthuthukiswa kokukhiqiza, ushintsho oluvela ku-mainstreamAmasentimitha angu-6–8 i-SiC to I-SiC engamasentimitha angu-12Ama-substrate aqashelwa kabanzi njengendlela ebalulekile. I-wafer engamasentimitha angu-12 inikeza indawo enkulu kakhulu engasetshenziswa kunefomethi encane, okwenza kube nomphumela ophezulu we-die nge-wafer ngayinye, ukusetshenziswa kwe-wafer okuthuthukisiwe, kanye nesilinganiso esinciphile sokulahlekelwa umkhawulo—ngaleyo ndlela kusekela ukulungiswa kwezindleko zokukhiqiza kulo lonke uchungechunge lokuhlinzeka.

Indlela Yokukhulisa Ikristalu Nokwenza Ama-Wafer

 

Le substrate engu-12-intshi eqhubayo ye-4H-SiC ikhiqizwa ngokumboza uchungechunge lwenqubo epheleleukwandiswa kwembewu, ukukhula kwekristalu elilodwa, ukugoba, ukunciphisa, kanye nokupholisha, ngokulandela imikhuba ejwayelekile yokukhiqiza ama-semiconductor:

 

  • Ukwandiswa kwembewu nge-Physical Vapor Transport (PVT):
    I-intshi engu-12Ikristalu yembewu engu-4H-SiCitholakala ngokunwetshwa kobubanzi kusetshenziswa indlela ye-PVT, okuvumela ukukhula okulandelayo kwamabhola e-4H-SiC adonsayo angu-12-intshi.

  • Ukukhula kwekristalu eyodwa ye-4H-SiC eqhubayo:
    Ukuqhuban⁺ 4H-SiCukukhula kwekristalu elilodwa kufezwa ngokungenisa i-nitrogen endaweni yokukhula ukuze kuhlinzekwe ngokulawulwa kwe-doping yabaxhasi.

  • Ukukhiqizwa kwe-wafer (ukucubungula okujwayelekile kwe-semiconductor):
    Ngemva kokubumba i-boule, ama-wafer akhiqizwa nge-ukunqunywa nge-laser, ulandelwa nguukuncibilikisa, ukupholisha (kufaka phakathi ukuqedwa kwezinga le-CMP), kanye nokuhlanza.
    Ubukhulu be-substrate obuvelayo buyi560 μm.

 

Le ndlela ehlanganisiwe yenzelwe ukusekela ukukhula okuzinzile kububanzi obukhulu kakhulu ngenkathi kugcinwa ubuqotho bekristalu kanye nezakhiwo zikagesi ezihambisanayo.

 

i-sic wafer 9

 

Ukuqinisekisa ukuhlolwa kwekhwalithi okuphelele, i-substrate ichazwa kusetshenziswa inhlanganisela yamathuluzi okuhlola isakhiwo, okukhanya, kagesi, kanye namaphutha:

 

  • I-Raman spectroscopy (imephu yendawo):ukuqinisekiswa kokufana kwe-polytype kuyo yonke i-wafer

  • I-microscopy ye-optical ezenzakalelayo ngokuphelele (imephu ye-wafer):ukutholwa kanye nokuhlolwa kwezibalo zamapayipi amancane

  • I-metrology yokumelana nokuxhumana (imephu ye-wafer):ukusatshalaliswa kokumelana ezindaweni eziningi zokulinganisa

  • Ukukhanya kwe-X-ray okunesisombululo esiphezulu (HRXRD):ukuhlolwa kwekhwalithi yekristalu ngokulinganisa ijika eligobile

  • Ukuhlolwa kokususwa kwendawo (ngemuva kokuqoshwa okukhethiwe):ukuhlolwa kobuningi bokuhlukana kanye nokwakheka (kugcizelelwa ekuhlukaneni kwezikulufo)

 

i-sic wafer 10

Imiphumela Ebalulekile Yokusebenza (Omele)

Imiphumela yokuchazwa kwezimpawu ikhombisa ukuthi i-substrate engu-12-intshi eqhubayo engu-4H-SiC ikhombisa ikhwalithi eqinile yezinto ezibonakalayo kuzo zonke izinhlaka ezibalulekile:

(1) Ubumsulwa kanye nokufana kwe-polytype

  • Imibukiso yemephu yendawo yaseRamanUkumbozwa kwe-polytype engu-100% 4H-SiCngaphesheya kwe-substrate.

  • Akukho ukufakwa kwamanye ama-polytype (isb., 6H noma 15R) okutholakalayo, okubonisa ukulawulwa okuhle kakhulu kwe-polytype esikalini esingu-12-intshi.

(2) Ubuningi bepayipi elincane (i-MPD)

  • Ukumapha nge-microscopy yesikali se-wafer kubonisaubuningi bepayipi elincane < 0.01 cm⁻², okubonisa ukususwa okuphumelelayo kwalesi sigaba sokukhubazeka esikhawulela idivayisi.

(3) Ukumelana kukagesi kanye nokufana

  • Imephu yokumelana nokuxhumana (ukulinganisa amaphuzu angu-361) ikhombisa:

    • Ububanzi bokumelana:20.5–23.6 mΩ·cm

    • Ukumelana okumaphakathi:22.8 mΩ·cm

    • Ukungalingani:< 2%
      Le miphumela ikhombisa ukuhambisana okuhle kokufakwa kwe-dopant kanye nokufana kukagesi okuhle kwe-wafer-scale.

(4) Ikhwalithi yekristalu (HRXRD)

  • Ukulinganiswa kwejika lokugwedla le-HRXRD ku(004) ukubonakaliswa, kuthathwe ku-amaphuzu amahlanungendlela yobubanzi be-wafer, bonisa:

    • Iziqongo ezilodwa, ezicishe zilingane ngaphandle kokuziphatha kweziqongo eziningi, okuphakamisa ukungabikho kwezici zomngcele wezinhlamvu eziphansi.

    • Isilinganiso se-FWHM:20.8 arcsec (″), okubonisa ikhwalithi ephezulu yekristalu.

(5) Ubuningi bokuhlukaniswa kwezikulufo (TSD)

  • Ngemva kokukhetha okukhethiwe kanye nokuskena okuzenzakalelayo,ubuningi bokuhlukaniswa kwezikulufokulinganiswa ku-2 cm⁻², okubonisa i-TSD ephansi esikalini esingu-12-intshi.

Isiphetho esivela emiphumeleni engenhla:
I-substrate ikhombisaubumsulwa obuhle kakhulu be-polytype ye-4H, ukuminyana kwe-micropipe okuphansi kakhulu, ukumelana okuzinzile nokulinganayo okuphansi, ikhwalithi eqinile yekristalu, kanye nokuminyana okuphansi kokuhlukaniswa kwezikulufo, isekela ukufaneleka kwayo ekukhiqizweni kwamadivayisi athuthukile.

Inani Lomkhiqizo Nezinzuzo

  • Ivumela ukufuduka kokukhiqiza kwe-SiC okungamasentimitha angu-12
    Ihlinzeka ngeplatifomu ye-substrate esezingeni eliphezulu ehambisana nomhlahlandlela wemboni wokukhiqiza ama-wafer e-SiC angu-12-intshi.

  • Ubuningi obuphansi besici ukuze kuthuthukiswe umkhiqizo wedivayisi nokuthembeka kwayo
    Ubuningi bepayipi elincane kakhulu kanye nobukhulu obuphansi bokuhlukaniswa kwezikulufo kusiza ekunciphiseni izindlela zokulahlekelwa yisivuno eziyingozi nezinemingcele.

  • Ukufana okuhle kakhulu kukagesi ukuze inqubo ihlale izinzile
    Ukusatshalaliswa kokumelana okuqinile kusekela ukuqina kwedivayisi ye-wafer kuya ku-wafer kanye nokuvumelana okungaphakathi kwe-wafer.

  • Ikhwalithi ephezulu yekristalu esekela i-epitaxy kanye nokucutshungulwa kwamadivayisi
    Imiphumela ye-HRXRD kanye nokungabikho kwezimpawu zomngcele wezinhlamvu ezisezingeni eliphansi kubonisa ikhwalithi enhle yezinto zokwakha zokukhula kwe-epitaxial kanye nokwenziwa kwamadivayisi.

 

Izinhlelo Zokusebenza Eziqondiwe

I-substrate engu-12-intshi eqhuba i-4H-SiC iyasebenza ku:

  • Amadivayisi kagesi e-SiC:Ama-MOSFET, ama-diode e-Schottky barrier (SBD), kanye nezakhiwo ezihlobene

  • Izimoto zikagesi:ama-inverter amakhulu okudonsa, amashaja angaphakathi (i-OBC), kanye nama-converter e-DC-DC

  • Amandla avuselelekayo kanye negridi:ama-inverter e-photovoltaic, izinhlelo zokugcina amandla, kanye namamojula e-smart grid

  • Ama-elekthronikhi kagesi ezimboni:izinsiza zamandla ezisebenza kahle kakhulu, ama-motor drive, kanye nama-converter ane-voltage ephezulu

  • Izidingo ze-wafer zendawo enkulu ezivelayo:ukupakishwa okuthuthukisiwe kanye nezinye izimo zokukhiqiza ze-semiconductor ezihambisana namasentimitha angu-12

 

Imibuzo Evame Ukubuzwa – I-Substrate engu-12-Inch Conductive 4H-SiC

Umbuzo 1. Lo mkhiqizo uluhlobo luni lwe-substrate ye-SiC?

A:
Lo mkhiqizo u-I-substrate ye-4H-SiC eyodwa-crystal edonsayo engamasentimitha angu-12 (uhlobo lwe-n⁺), ekhuliswe ngendlela ye-Physical Vapor Transport (PVT) futhi icutshungulwe kusetshenziswa amasu ajwayelekile e-semiconductor wafering.

Umbuzo 2. Kungani i-4H-SiC ikhethwa njenge-polytype?

A:
I-4H-SiC inikeza inhlanganisela engcono kakhulu ye-ukuhamba okuphezulu kwama-electron, igebe elikhulu, insimu yokuqhekeka okuphezulu, kanye nokuqhuba ukushisaphakathi kwama-polytype e-SiC afanele ukuhweba. Yi-polytype evelele esetshenziselwaamadivayisi e-SiC ane-voltage ephezulu kanye namandla aphezulu, njenge-MOSFET kanye nama-diode e-Schottky.

Umbuzo 3. Yiziphi izinzuzo zokushintsha kusuka kuma-substrate e-SiC angu-8-intshi kuya kwangu-12-intshi?

A:
I-wafer ye-SiC engamasentimitha angu-12 inikeza:

  • Ngokuphawulekayoindawo enkulu engasetshenziswa

  • Umkhiqizo ophezulu wedayi nge-wafer ngayinye

  • Isilinganiso sokulahlekelwa okuphansi komphetho

  • Ukuhambisana okuthuthukisiwe neimigqa yokukhiqiza ye-semiconductor ethuthukisiwe engu-12-intshi

Lezi zici zinegalelo ngqo ku-izindleko eziphansi ngedivayisi ngayinyekanye nokusebenza kahle kokukhiqiza okuphezulu.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.

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