Imishini Yokunciphisa Ama-Wafer Yokucubungula Ama-Wafers angu-4 Inch-12 Inch Sapphire/SiC/Si

Incazelo emfushane:

Imishini Yokunciphisa I-Wafer iyithuluzi elibalulekile ekukhiqizweni kwe-semiconductor yokunciphisa ukujiya kwe-wafer ukuze kuthuthukiswe ukuphathwa kokushisa, ukusebenza kukagesi, kanye nokusebenza kahle kokupakisha. Le mishini isebenzisa ukugaya ngomshini, ukupholisha ngomshini ngamakhemikhali (i-CMP), kanye nobuchwepheshe bokuchoboza okomile/okumanzi ukuze kufezwe ukulawulwa kokujiya okunembile kakhulu (± 0.1 μm) kanye nokuhambisana nama-wafer angu-4–12-intshi. Izinhlelo zethu zisekela ukuqondiswa kwe-C/A-plane futhi zenzelwe izinhlelo zokusebenza ezithuthukisiwe njenge-3D ICs, amadivayisi kagesi (i-IGBT/MOSFETs), kanye nezinzwa ze-MEMS.

I-XKH iletha izixazululo eziphelele, okuhlanganisa imishini eyenziwe ngokwezifiso (ukucubungula i-wafer engu-2–12-intshi), ukwenza ngcono inqubo (ubuningi besici <100/cm²), kanye nokuqeqeshwa kobuchwepheshe.

Sithumelele i-imeyili

Izici

Isimiso Sokusebenza

Inqubo yokunciphisa i-wafer isebenza ngezigaba ezintathu:
Ukugaya Okungafanele: Isondo ledayimane (usayizi wegrit 200–500 μm) lisusa ama-50–150 μm wezinto ku-3000–5000 rpm ukuze linciphise ukujiya ngokushesha.
Ukugaya Okuncane: Isondo elincane (usayizi wegrit 1–50 μm) linciphisa ukujiya kube ngu-20–50 μm ku-<1 μm/s ukuze kuncishiswe umonakalo ongaphansi komhlaba.
Ukupholisha (CMP): I-slurry yamakhemikhali-yemishini isusa umonakalo osele, ifinyelele ku-Ra <0.1 nm.

Izinto Ezihambisanayo

I-Silicon (Si): Okujwayelekile kwama-wafer e-CMOS, ancishisiwe abe ngu-25 μm ukuze kufakwe i-3D stacking.
I-Silicon Carbide (SiC): Idinga amasondo edayimane akhethekile (ukugxila kwedayimane okungu-80%) ukuze kuqiniswe ukushisa.
I-Sapphire (Al₂O₃): Incishisiwe ibe ngu-50 μm ukuze kusetshenziswe i-UV LED.

Izingxenye Zesistimu Eyinhloko

1. Uhlelo Lokugaya
I-Dual-Axis Grinder: Ihlanganisa ukugaya okuqinile/okuncane epulatifomu eyodwa, inciphisa isikhathi sokujikeleza ngo-40%.
I-Spindle ye-Aerostatic: ibanga lesivinini esingu-0–6000 rpm esinomjikelezo we-radial ongu-<0.5 μm.

2. Uhlelo Lokuphatha I-Wafer
I-Vacuum Chuck: Amandla okugcina angu->50 N anokunemba kokubeka okungu-±0.1 μm.
Ingalo Eyirobhothi: Ithutha ama-wafer angu-4–12-intshi ngesivinini esingu-100 mm/s.

3. Uhlelo Lokulawula
I-Laser Interferometry: Ukuqapha ukujiya kwesikhathi sangempela (isisombululo esingu-0.01 μm).
Impendulo Eqhutshwa Yi-AI: Ibikezela ukuguguleka kwamasondo futhi ilungisa amapharamitha ngokuzenzakalelayo.

4. Ukupholisa Nokuhlanza
Ukuhlanza nge-Ultrasonic: Kususa izinhlayiya >0.5 μm ngokusebenza kahle okungu-99.9%.
Amanzi Ahlanjululwe: Apholisa i-wafer ibe ngaphansi kuka-5°C ngaphezu kwendawo ezungezile.

Izinzuzo Eziyinhloko

1. Ukunemba Okuphezulu Kakhulu: I-TTV (Ukwehluka Kokujiya Okuphelele) <0.5 μm, I-WTW (Ukwehluka Kokujiya Okungaphakathi Kwe-Wafer) <1 μm.

2. Ukuhlanganiswa Kwezinqubo Eziningi: Kuhlanganisa ukugaya, i-CMP, kanye nokuqopha i-plasma emshinini owodwa.

3. Ukuhambisana kwezinto:
I-Silicon: Ukunciphisa ukujiya kusuka ku-775 μm kuya ku-25 μm.
I-SiC: Ifinyelela ku-<2 μm TTV yezinhlelo zokusebenza ze-RF.
Ama-Wafers Ane-Doped: Ama-wafers e-InP ane-Phosphorus anokushelela okungaphansi kuka-5%.

4. Ukuzenzakalela Okuhlakaniphile: Ukuhlanganiswa kwe-MES kunciphisa amaphutha abantu ngo-70%.

5. Ukusebenza Kahle Kwamandla: Ukusetshenziswa kwamandla okuphansi ngo-30% ngokubhuleka okuvuselelayo.

Izinhlelo Zokusebenza Eziyinhloko

1. Ukupakisha Okuthuthukisiwe
• Ama-IC e-3D: Ukunciphisa i-wafer kwenza ukufakwa kwe-vertical stacking yama-logic/memory chips (isb., ama-HBM stacks), kufinyelela i-bandwidth ephezulu engu-10× kanye nokusetshenziswa kwamandla okuncishisiwe ngo-50% uma kuqhathaniswa nezixazululo ze-2.5D. Imishini isekela i-hybrid bonding kanye nokuhlanganiswa kwe-TSV (Through-Silicon Via), okubalulekile kuma-processor e-AI/ML adinga i-interconnect pitch engaphansi kuka-10 μm. Isibonelo, ama-wafer angu-12-intshi ancishisiwe abe ngu-25 μm avumela ukufakwa kwe-stacking izendlalelo ezingu-8+ ngenkathi kugcinwa i-warpage engaphansi kuka-1.5%, ebalulekile ezinhlelweni ze-LiDAR zezimoto.

• Ukupakisha Okuphuma Ku-Fan: Ngokunciphisa ukujiya kwe-wafer kube ngu-30 μm, ubude bokuxhumeka bufinyezwa ngo-50%, kunciphisa ukubambezeleka kwesignali (<0.2 ps/mm) futhi kuvumele ama-chiplet angu-0.4 mm amancane kakhulu kuma-SoC eselula. Le nqubo isebenzisa ama-algorithms okugaya akhokhelwa ukucindezeleka ukuvimbela i-warpage (>50 μm ukulawulwa kwe-TTV), okuqinisekisa ukuthembeka kuzinhlelo zokusebenza ze-RF ezivame kakhulu.

2. Amandla kagesi
• Amamojula e-IGBT: Ukunciphisa kube ngu-50 μm kunciphisa ukumelana nokushisa kube ngu-<0.5°C/W, okuvumela ama-MOSFET angu-1200V SiC ukuthi asebenze emazingeni okushisa angama-200°C. Imishini yethu isebenzisa ukugaya okunezigaba eziningi (okuqinile: 46 μm grit → okuncane: 4 μm grit) ukuze kuqedwe umonakalo ongaphansi komhlaba, kufezwe imijikelezo engaphezu kuka-10,000 yokuthembeka kokujikeleza kokushisa. Lokhu kubalulekile kuma-inverters e-EV, lapho ama-wafer e-SiC angu-10 μm obukhulu ethuthukisa isivinini sokushintsha ngo-30%.
• Amadivayisi Amandla e-GaN-on-SiC: Ukunciphisa i-wafer ku-80 μm kuthuthukisa ukuhamba kwama-electron (μ > 2000 cm²/V·s) kuma-650V GaN HEMTs, kunciphisa ukulahlekelwa kokuqhuba ngo-18%. Le nqubo isebenzisa i-laser-assisted dicing ukuvimbela ukuqhekeka ngesikhathi sokunciphisa, kufezwe i-<5 μm edge chipping yama-RF power amplifiers.

3. Optoelectronics
• Ama-LED e-GaN-on-SiC: Ama-substrate e-sapphire angu-50 μm athuthukisa ukusebenza kahle kokukhipha ukukhanya (i-LEE) kuya ku-85% (uma kuqhathaniswa no-65% wama-wafer angu-150 μm) ngokunciphisa ukubanjwa kwe-photon. Ukulawulwa kwe-TTV okuphansi kakhulu kwemishini yethu (<0.3 μm) kuqinisekisa ukukhishwa kwe-LED okufanayo kuma-wafer angu-12 intshi, okubalulekile kuzibonisi ze-Micro-LED ezidinga ukufana kwe-wavelength okungaphansi kuka-100nm.
• Ama-Silicon Photonics: Ama-silicon wafers anobukhulu obungu-25μm avumela ukulahlekelwa okuphansi kokusabalala okungu-3 dB/cm kuma-waveguides, okubalulekile kuma-transceivers optical angu-1.6 Tbps. Le nqubo ihlanganisa ukushelela kwe-CMP ukuze kuncishiswe ukujiya kobuso ku-Ra <0.1 nm, okuthuthukisa ukusebenza kahle kokuhlanganisa ngo-40%.

4. Izinzwa ze-MEMS
• Ama-Accelerometer: Ama-wafer e-silicon angu-25 μm afinyelela ku-SNR >85 dB (uma kuqhathaniswa nama-wafer angu-50 μm) ngokwandisa ukuzwela kokuguquguquka kobufakazi. Uhlelo lwethu lokugaya olune-dual-axis lukhokhela ama-gradients okucindezeleka, luqinisekisa ukuthi ukuzwela okungu-<0.5% kuhamba ngaphezu kuka--40°C kuya ku-125°C. Izinhlelo zokusebenza zifaka phakathi ukutholwa kwengozi yezimoto kanye nokulandelela ukunyakaza kwe-AR/VR.

• Izinzwa Zokucindezela: Ukunciphisa kufika ku-40 μm kuvumela ububanzi bokulinganisa ibha engu-0–300 nge-hysteresis ye-FS engu-<0.1%. Ukusebenzisa ukubopha kwesikhashana (izithwali zengilazi), inqubo igwema ukuphuka kwe-wafer ngesikhathi sokusika ngemuva, ifinyelele ukubekezelela ukucindezela okungaphezulu kwe-<1 μm kwezinzwa ze-IoT zezimboni.

• Ukusebenzisana Kobuchwepheshe: Imishini yethu yokunciphisa i-wafer ihlanganisa ukugaya ngomshini, i-CMP, kanye nokusika kwe-plasma ukuze kuxazululwe izinselele zezinto ezahlukahlukene (i-Si, i-SiC, i-Sapphire). Isibonelo, i-GaN-on-SiC idinga ukugaya okuxubile (amasondo edayimane + i-plasma) ukuze kulinganiswe ubulukhuni kanye nokwanda kokushisa, kuyilapho izinzwa ze-MEMS zifuna ubulukhuni bomphezulu obungaphansi kwe-5 nm ngokusebenzisa i-CMP polishing.

• Umthelela Wemboni: Ngokuvumela ama-wafer amancane, asebenza kahle kakhulu, lobu buchwepheshe buqhuba ukusungula izinto ezintsha kuma-chips e-AI, amamojula e-5G mmWave, kanye nama-electronics aguquguqukayo, ane-TTV tolerances <0.1 μm yezibonisi ezigoqekayo kanye <0.5 μm yezinzwa ze-LiDAR zezimoto.

Izinsizakalo ze-XKH

1. Izixazululo ezenziwe ngokwezifiso
Ukulungiselelwa Okungalinganiswa: Imiklamo yegumbi engu-4–12-intshi enokulayisha/ukukhulula okuzenzakalelayo.
Ukusekelwa Kokusebenzisa Imithi: Izindlela zokupheka ezenziwe ngokwezifiso zamakristalu afakwe i-Er/Yb kanye nama-wafer e-InP/GaAs.

2. Ukusekelwa Kokuphela
Ukuthuthukiswa Kwenqubo: Isivivinyo samahhala sisebenza kahle.
Ukuqeqeshwa Komhlaba Wonke: Imihlangano yobuchwepheshe minyaka yonke mayelana nokugcinwa nokuxazulula izinkinga.

3. Ukucutshungulwa Kwezinto Eziningi
I-SiC: Ukuncipha kwe-wafer kube yi-100 μm nge-Ra <0.1 nm.
I-Sapphire: Ubukhulu obungu-50μm bamafasitela e-UV laser (ukudluliselwa >92%@200 nm).

4. Izinsizakalo Ezinenani Elikhulu
Okutholakalayo: Amasondo edayimane (ama-wafer angaphezu kuka-2000/impilo) kanye nama-slurries e-CMP.

Isiphetho

Lo mshini wokunciphisa i-wafer unikeza ukunemba okuhamba phambili embonini, ukuguquguquka kwezinto eziningi, kanye nokwenza izinto ngokuzenzakalela okuhlakaniphile, okwenza kube yinto ebalulekile ekuhlanganisweni kwe-3D kanye ne-elekthronikhi yamandla. Izinsizakalo eziphelele ze-XKH—kusukela ekwenzeni ngokwezifiso kuya ekucutshungulweni kwangemva—ziqinisekisa ukuthi amakhasimende afinyelela ukusebenza kahle kwezindleko kanye nokusebenza kahle ekukhiqizeni ama-semiconductor.