I-Silicon Carbide (SiC) Ishubhu Yesithando Esivundlile

Isithombe Esifakiwe Se-Silicon Carbide (SiC) Horizontal Furnace Tube

Incazelo emfushane:

I-Silicon Carbide (SiC) Horizontal Furnace Tube isebenza njengegumbi eliyinhloko lenqubo kanye nomngcele wokucindezela wokusabela kwesigaba segesi lokushisa okuphezulu kanye nokwelashwa kokushisa okusetshenziswa ekwakhiweni kwe-semiconductor, ekukhiqizweni kwe-photovoltaic, kanye nasekucutshungulweni kwezinto ezithuthukisiwe.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubekwa Komkhiqizo kanye Nokuphakanyiswa Kwenani

Yakhiwe ngesakhiwo se-SiC esisodwa, esenziwe ngesengezo esihlanganiswe nesendlalelo esivikelayo se-CVD-SiC esiminyene, le tube inikeza ukuhanjiswa kokushisa okumangalisayo, ukungcola okuncane, ubuqotho obuqinile bomshini, kanye nokumelana kwamakhemikhali okuvelele.
Umklamo wayo uqinisekisa ukufana kwezinga lokushisa eliphezulu, izikhawu zesevisi ezinde, kanye nokusebenza okuzinzile kwesikhathi eside.

Izinzuzo Eziyinhloko

Kuthuthukisa ukuhambisana kwezinga lokushisa lesistimu, ukuhlanzeka, kanye nokusebenza kahle kwemishini iyonke (OEE).
Kunciphisa isikhathi sokungasebenzi sokuhlanza futhi kwandise imijikelezo yokushintsha, kunciphisa izindleko eziphelele zobunikazi (TCO).
Ihlinzeka ngegumbi elihlala isikhathi eside elikwazi ukusingatha amakhemikhali ashisa kakhulu e-oxidative kanye ne-chlorine enengozi encane.

Ifasitela Lezinqubo Nezimo Ezisebenzayo

Amagesi asebenzayo: i-oxygen (O₂) kanye nezinye izingxube ze-oxidizing
Amagesi okuthwala/avikelayo: i-nitrogen (N₂) kanye namagesi angenawo umoya ahlanzekile kakhulu
Izinhlobo ezihambisanayo: amagesi athwala i-chlorine (ukulawulwa kokuhlushwa nesikhathi sokuhlala)

Izinqubo Ezijwayelekile: ukushiswa komoya okomile/okumanzi, ukuncibilikisa, ukusabalala, ukufakwa kwe-LPCVD/CVD, ukusebenza komphezulu, ukudlula kwe-photovoltaic, ukukhula kwefilimu encane esebenzayo, i-carbonization, i-nitridation, nokuningi.

Izimo Zokusebenza

Izinga lokushisa: izinga lokushisa legumbi kufika ku-1250 °C (vumela isilinganiso sokuphepha esingu-10–15% kuye ngomklamo we-heater kanye ne-ΔT)
Ingcindezi: kusukela emazingeni e-vacuum anomfutho ophansi/i-LPCVD kuya ekucindezelweni okuhle okuseduze nomoya (i-spec yokugcina nge-oda ngalinye lokuthenga)

Izinto Zokusebenza kanye Nengqondo Yesakhiwo

Umzimba we-Monolithic SiC (Owengeziwe Owenziwe)

I-β-SiC enobukhulu obuphezulu noma i-SiC enezigaba eziningi, eyakhiwe njengengxenye eyodwa—ayinazo izihlanganisi noma imithungo ehlanganisiwe engavuza noma idale amaphuzu okucindezeleka.
Ukushisa okuphezulu kwenza impendulo esheshayo yokushisa kanye nokufana okuhle kakhulu kokushisa kwe-axial/radial.
I-coefficient ephansi nezinzile yokwanda kokushisa (i-CTE) iqinisekisa ukuzinza kobukhulu kanye nezivalo ezithembekile emazingeni okushisa aphezulu.

Isimbozo Esisebenzayo se-CVD SiC

Kufakwe endaweni, okumsulwa kakhulu (ukungcola kobuso/kokumboza < 5 ppm) ukucindezela ukukhiqizwa kwezinhlayiya kanye nokukhululwa kwama-ion ensimbi.
Ukungasebenzi kahle kwamakhemikhali ngokumelene namagesi aqukethe i-oxidizing kanye ne-chlorine, okuvimbela ukuhlaselwa noma ukuphinde kufakwe odongeni.
Izinketho zobukhulu obuqondene nendawo ethile ukuze kulinganiswe ukumelana nokugqwala kanye nokusabela kokushisa.

Inzuzo Ehlanganisiwe: umzimba we-SiC oqinile unikeza amandla esakhiwo kanye nokuqhuba ukushisa, kuyilapho ungqimba lwe-CVD luqinisekisa ukuhlanzeka kanye nokumelana nokugqwala ukuze kube nokuthembeka okuphezulu kanye nomphumela ongcono.

Izinhloso Eziyinhloko Zokusebenza

Izinga lokushisa lokusetshenziswa okuqhubekayo:≤ 1250 °C
Ukungcola kwe-substrate enkulu:< 300 ppm
Ukungcola kobuso be-CVD-SiC:< 5 ppm
Ukubekezelelana kobukhulu: OD ± 0.3–0.5 mm; i-coaxiality ≤ 0.3 mm/m (kuyatholakala ukuqina)
Ubulukhuni bodonga lwangaphakathi: Ra ≤ 0.8–1.6 µm (ukuphela okucwebezelisiwe noma okuseduze nesibuko kungakhethwa)
Izinga lokuvuza kwe-Helium: ≤ 1 × 10⁻⁹ Pa·m³/s
Ukukhuthazela kokushaqeka kokushisa: kusinda ekushiseni/ekubandeni okuphindaphindiwe ngaphandle kokuqhekeka noma ukuqhekeka
Ukuhlanganiswa kwegumbi lokuhlanza: I-ISO Class 5–6 enamazinga aqinisekisiwe ezinsalela zezinhlayiya/zensimbi-ion

Ukucushwa kanye nezinketho

Ijiyometri: OD 50–400 mm (okukhulu ngokuhlolwa) ngokwakhiwa okude kwengxenye eyodwa; ubukhulu bodonga obulungiselelwe amandla omshini, isisindo, kanye nokushintsha kokushisa.
Imiklamo yokugcina: ama-flange, umlomo wensimbi, i-bayonet, izindandatho zokuthola, imigoqo ye-O-ring, kanye nama-pump-out noma ama-pressure ports akhethekile.
Amachweba asebenzayo: izindawo zokufaka i-thermocouple, izihlalo zengilazi, izindawo zokungena zegesi ezidlulayo—konke kwenzelwe ukusebenza okushisa okuphezulu, okuvimbela ukuvuza.
Izinhlelo zokumboza: udonga lwangaphakathi (okuzenzakalelayo), udonga lwangaphandle, noma ukumbozwa okugcwele; ukuvikela okuqondiwe noma ukujiya okulinganisiwe kwezindawo ezithinteka kakhulu.
Ukwelashwa nokuhlanzeka kwendawo: amazinga amaningi okulukhuni, ukuhlanzwa kwe-ultrasonic/DI, kanye nezinqubo zokubhaka/zokomisa ezenziwe ngokwezifiso.
Izesekeli: ama-flange e-graphite/ceramic/metal, izivalo, izinto zokuthola indawo, imikhono yokuphatha, kanye nezindawo zokugcina izinto.

Ukuqhathaniswa Kokusebenza

I-Metric	I-SiC Tube	Ishubhu le-Quartz	Ishubhu le-Alumina	Ishubhu le-Graphite
Ukuqhuba kwe-thermal	Okuphezulu, okufana	Phansi	Phansi	Phezulu
Amandla/ukukhukhuleka kwezinga lokushisa eliphezulu	Kuhle kakhulu	Okuhle	Kuhle	Kuhle (kuyazwela ekufakweni kwe-oxidation)
Ukushaqeka kokushisa	Kuhle kakhulu	Kubuthakathaka	Okumaphakathi	Kuhle kakhulu
Ukuhlanzeka / ama-ion ensimbi	Kuhle kakhulu (okuphansi)	Okumaphakathi	Okumaphakathi	Kubi
Ukuxubana kwe-Oxidation kanye ne-Cl-chemistry	Kuhle kakhulu	Okuhle	Kuhle	Kubi (kuyenza ibe ne-oxidize)
Izindleko uma ziqhathaniswa nesikhathi sesevisi	Impilo ephakathi nendawo / ende	Okuphansi / okufushane	Okuphakathi / okuphakathi	Kulinganiselwe okuphakathi nendawo / imvelo

Imibuzo Evame Ukubuzwa (Imibuzo Evame Ukubuzwa)

Umbuzo 1. Kungani ukhethe umzimba we-SiC oprintiwe nge-3D?
A. Isusa imithungo nama-braze angavuza noma agxilise ukucindezeleka, futhi isekela amajiyometri ayinkimbinkimbi ngokunemba okulinganayo kobukhulu.

Umbuzo 2. Ingabe i-SiC imelana namagesi aphethe i-chlorine?
A. Yebo. I-CVD-SiC ayisebenzi kahle ngaphakathi kwemingcele ethile yokushisa kanye nengcindezi. Ezindaweni ezinomthelela omkhulu, kunconywa ukugqoka okujiyile okusendaweni kanye nezinhlelo zokuhlanza/zokukhipha umoya eziqinile.

Umbuzo 3. Isebenza kanjani kangcono kunamashubhu e-quartz?
A. I-SiC inikeza impilo yesevisi ende, ukufana okungcono kwezinga lokushisa, ukungcola okuphansi kwezinhlayiya/i-iron yensimbi, kanye ne-TCO ethuthukisiwe—ikakhulukazi ngale kuka-900 °C noma ezindaweni ezisebenzisa i-oxidizing/chlorine.

Umbuzo 4. Ingabe ithubhu lingaphatha ukusheshisa okusheshayo?
A. Yebo, uma nje kulandelwa iziqondiso eziphezulu ze-ΔT kanye nezinga lokukhuphuka. Ukuhlanganisa umzimba we-SiC ephezulu nesendlalelo esincane se-CVD kusekela ukuguquka okusheshayo kokushisa.

Umbuzo 5. Kudingeka nini ukushintshwa?
A. Buyisela ithubhu uma ubona imifantu ye-flange noma yomphetho, imigodi yokumboza noma ukuqhekeka, amazinga okuvuza akhuphukayo, ukukhukhuleka okukhulu kwephrofayili yokushisa, noma ukukhiqizwa kwezinhlayiya okungavamile.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.