Isakhiwo se-SiCOI esingaphansi kwe-4inch 6inch HPSI SiC SiO2 Si subatrate

I-SiCOI wafer engu-4inch engu-6inch HPSI SiC SiO2 Si subatrate isakhiwo Isithombe Esifakiwe

Incazelo emfushane:

Leli phepha liveza umbono oningiliziwe wama-wafer e-Silicon Carbide-on-Insulator (SiCOI), ikakhulukazi agxile kuma-substrate angu-4-intshi no-6-intshi anezendlalelo ze-high-purity semi-insulating (HPSI) silicon carbide (SiC) eziboshwe ezingqimbeni zokufaka i-silicon dioxide (SiO₂) phezu kwama-substrate e-silicon (Si). Isakhiwo se-SiCOI sihlanganisa izakhiwo zikagesi, ezishisayo, nezomshini ze-SiC nezinzuzo zokuhlukaniswa kukagesi kwesendlalelo se-oxide kanye nokusekelwa komshini kwesendlalelo se-silicon. Ukusebenzisa i-HPSI SiC kuthuthukisa ukusebenza kwedivayisi ngokunciphisa ukuqhutshwa kwesendlalelo kanye nokunciphisa ukulahlekelwa yi-parasitic, okwenza lawa ma-wafer afaneleke kakhulu ekusetshenzisweni kwe-semiconductor enamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. Inqubo yokukhiqiza, izici zezinto ezibonakalayo, kanye nezinzuzo zesakhiwo zalokhu kulungiselelwa kwezingqimba eziningi kuyaxoxwa ngakho, kugcizelela ukufaneleka kwawo kuma-electronics kagesi esizukulwane esilandelayo kanye nezinhlelo ze-microelectromechanical (MEMS). Ucwaningo luphinde luqhathanise izakhiwo kanye nezinhlelo ezingaba khona zama-wafer e-SiCOI angu-4-intshi no-6-intshi, lugqamisa amathuba okukhula kanye nokuhlanganiswa kwamadivayisi e-semiconductor athuthukile.

Sithumelele i-imeyili

Izici

Isakhiwo se-wafer ye-SiCOI

I-HPB (i-High-Performance Bonding) i-BIC (i-Bonded Integrated Circuit) kanye ne-SOD (ubuchwepheshe obufana ne-Silicon-on-Diamond noma i-Silicon-on-Insulator). Ihlanganisa:

Amamethrikhi Okusebenza:

Ibala amapharamitha afana nokunemba, izinhlobo zamaphutha (isib., "Akukho phutha," "Ibanga lenani"), kanye nokulinganisa ubukhulu (isib., "Ubukhulu/kg obuqondile be-Direct-Layer").

Ithebula elinamanani ezinombolo (mhlawumbe amapharamitha okuhlola noma inqubo) ngaphansi kwezihloko ezifana ne-"ADDR/SYGBDT," "10/0," njll.

Idatha Yobukhulu Besendlalelo:

Okufakiwe okuphindaphindwayo okubanzi okubhalwe ukuthi "Ubukhulu be-L1 (A)" kuya ku-"Ubukhulu be-L270 (A)" (cishe ku-Ångströms, 1 Å = 0.1 nm).

Kusikisela isakhiwo esinezingqimba eziningi esinokulawula ukujiya okunembile kwesendlalelo ngasinye, okuvame kakhulu kuma-wafer e-semiconductor athuthukile.

Isakhiwo se-SiCOI Wafer

I-SiCOI (i-Silicon Carbide on Insulator) iyisakhiwo esikhethekile se-wafer esihlanganisa i-silicon carbide (i-SiC) nesendlalelo sokuvikela, esifana ne-SOI (i-Silicon-on-Insulator) kodwa esilungiselelwe ukusetshenziswa kwamandla aphezulu/ukushisa okuphezulu. Izici ezibalulekile:

Ukwakheka Kwesendlalelo:

Isendlalelo Esiphezulu: I-Single-crystal Silicon Carbide (SiC) yokunyakaza okuphezulu kwama-electron kanye nokuqina kokushisa.

Isivikelo Esingcwatshwe: Ngokuvamile i-SiO₂ (i-oxide) noma idayimane (ku-SOD) ukunciphisa amandla ezinambuzane nokuthuthukisa ukuhlukaniswa.

Isisekelo Esiyisisekelo: I-Silicon noma i-polycrystalline SiC yokusekela ngomshini

Izakhiwo ze-SiCOI wafer

Izakhiwo Zikagesi I-Bandgap Ebanzi (3.2 eV ye-4H-SiC): Ivumela i-voltage ephezulu yokuqhekeka (>10× ephakeme kune-silicon). Yehlisa ukuvuza kwamanzi, ithuthukise ukusebenza kahle kwamadivayisi kagesi.

Ukuhamba Okuphezulu Kwe-Electron:~900 cm²/V·s (4H-SiC) uma kuqhathaniswa no-~1,400 cm²/V·s (Si), kodwa ukusebenza okungcono kakhulu kwenkundla ephezulu.

Ukumelana Okuphansi:Ama-transistors asekelwe ku-SiCOI (isb., ama-MOSFET) abonisa ukulahlekelwa okuphansi kokuqhuba.

Ukuvikela Okuhle Kakhulu:I-oxide efihliwe (i-SiO₂) noma ungqimba lwedayimane lunciphisa amandla e-parasitic kanye ne-crosstalk.

Izakhiwo ZokushisaUkushisa Okuphezulu: I-SiC (~490 W/m·K ye-4H-SiC) vs. I-Si (~150 W/m·K). Idayimane (uma isetshenziswa njengesivikelo) ingadlula i-2,000 W/m·K, okuthuthukisa ukushabalaliswa kokushisa.

Ukuzinza Kokushisa:Isebenza ngokuthembekile ku->300°C (uma kuqhathaniswa no-~150°C we-silicon). Yehlisa izidingo zokupholisa kuma-electronics anamandla.

3. Izakhiwo Zemishini NezamakhemikhaliUkuqina Okukhulu (~9.5 Mohs): Kumelana nokuguguleka, okwenza i-SiCOI iqine ezindaweni ezinzima.

Ukungasebenzi Kwamakhemikhali:Iyamelana nokugqwala kanye nokubola, ngisho nasezimweni ze-acidic/alkaline.

Ukwanda Okuphansi Kokushisa:Ihambisana kahle nezinye izinto ezishisa kakhulu (isib. i-GaN).

4. Izinzuzo Zesakhiwo (uma kuqhathaniswa ne-Bulk SiC noma i-SOI)

Ukulahlekelwa Okuncishisiwe Kwe-Substrate:Isendlalelo sokuvikela sivimbela ukuvuza kwamanje ku-substrate.

Ukusebenza Okuthuthukisiwe kwe-RF:Umthamo ophansi we-parasitic uvumela ukushintsha okusheshayo (okuwusizo kumadivayisi e-5G/mmWave).

Umklamo Oguquguqukayo:Isendlalelo esiphezulu se-Thin SiC sivumela ukukalwa kwedivayisi okulungiselelwe kahle (isb., iziteshi ezincane kakhulu kuma-transistors).

Ukuqhathaniswa ne-SOI kanye ne-Bulk SiC

Impahla	I-SiCOI	I-SOI (Si/SiO₂/Si)	I-Bulk SiC
Igebe	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Ukuqhuba Okushisayo	Okuphezulu (i-SiC + idayimane)	Okuphansi (i-SiO₂ ikhawulela ukugeleza kokushisa)	Okuphezulu (i-SiC kuphela)
I-Voltage Yokuqhekeka	Phezulu Kakhulu	Okumaphakathi	Phezulu Kakhulu
Izindleko	Okuphakeme	Ngaphansi	Okuphakeme kakhulu (i-SiC emsulwa)

Izicelo ze-SiCOI wafer

Amandla kagesi
Ama-wafer e-SiCOI asetshenziswa kabanzi kumadivayisi e-semiconductor ane-voltage ephezulu kanye namandla aphezulu njenge-MOSFET, ama-diode e-Schottky, kanye nama-power switch. I-bandgap ebanzi kanye ne-voltage ephezulu yokuqhekeka kwe-SiC kwenza ukuguqulwa kwamandla okuphumelelayo kube nokulahlekelwa okuncishisiwe kanye nokusebenza okuthuthukisiwe kokushisa.

Amadivayisi Emvamisa Yomsakazo (RF)
Isendlalelo sokuvikela ukushisa kuma-wafer e-SiCOI sinciphisa amandla okusebenzisa ama-parasitic, okwenza afaneleke kuma-transistors nama-amplifier asetshenziswa kwezokuxhumana, kuma-radar, nakubuchwepheshe be-5G.

Izinhlelo ze-Microelectromechanical (MEMS)
Ama-wafer e-SiCOI ahlinzeka ngeplatifomu eqinile yokwakha izinzwa ze-MEMS kanye nama-actuator asebenza ngokwethembeka ezindaweni ezinzima ngenxa yokungangeni kwamakhemikhali kwe-SiC kanye namandla omshini.

Ama-elekthronikhi Asezingeni Eliphezulu Lokushisa
I-SiCOI ivumela ama-elekthronikhi agcina ukusebenza nokuthembeka emazingeni okushisa aphezulu, okuzuzisa izinhlelo zokusebenza zezimoto, zezindiza, kanye nezezimboni lapho amadivayisi e-silicon avamile ehluleka khona.

Amadivayisi e-Photonic kanye ne-Optoelectronic
Ukuhlanganiswa kwezakhiwo ze-optical ze-SiC kanye nesendlalelo sokuvikela kusiza ukuhlanganiswa kwezifunda ze-photonic kanye nokuphathwa okuthuthukisiwe kokushisa.

Izinto Zokusebenza Eziqinile Zemisebe
Ngenxa yokubekezelela imisebe okungokwemvelo kwe-SiC, ama-wafer e-SiCOI afaneleka kakhulu ezindaweni nasezicelo zenuzi ezidinga amadivayisi amelana nezimo zemisebe ephezulu.

Imibuzo Nezimpendulo ze-SiCOI wafer

Umbuzo 1: Iyini i-wafer ye-SiCOI?

A: I-SiCOI imele i-Silicon Carbide-on-Insulator. Yisakhiwo se-semiconductor wafer lapho ungqimba oluncane lwe-silicon carbide (SiC) luboshelwa khona kungqimba oluvikelayo (ngokuvamile i-silicon dioxide, i-SiO₂), olusekelwa yi-substrate ye-silicon. Lesi sakhiwo sihlanganisa izakhiwo ezinhle kakhulu ze-SiC nokuhlukaniswa kukagesi kusuka ku-insulator.

Umbuzo 2: Yiziphi izinzuzo eziyinhloko zama-wafer e-SiCOI?

A: Izinzuzo eziyinhloko zifaka phakathi i-voltage ephezulu yokuqhekeka, i-bandgap ebanzi, ukuhanjiswa kokushisa okuhle kakhulu, ubulukhuni obukhulu bomshini, kanye nokwehla kwamandla ezinambuzane ngenxa yesendlalelo sokuvikela. Lokhu kuholela ekusebenzeni kahle kwedivayisi okuthuthukisiwe, ukusebenza kahle, kanye nokuthembeka.

Umbuzo 3: Yiziphi izindlela ezivamile zokusebenzisa ama-wafer e-SiCOI?

A: Zisetshenziswa kuma-electronics anamandla, amadivayisi e-RF asebenza ngesivinini esiphezulu, izinzwa ze-MEMS, ama-electronics asebenza ngokushisa okuphezulu, amadivayisi e-photonic, kanye nama-electronics aqiniswe ngemisebe.