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I-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide

Isithombe Esivelele se-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide

Incazelo emfushane:

I-silicon carbide substrate (i-SiC wafer) iyinto ye-semiconductor ebanzi enezakhiwo ezinhle kakhulu zomzimba nezamakhemikhali, ikakhulukazi ezivelele ezindaweni zokushisa okuphezulu, ezivame kakhulu, ezinamandla aphezulu, kanye nezindawo ezinemisebe ephezulu. I-4H-V ingenye yezakhiwo zekristalu ze-silicon carbide. Ngaphezu kwalokho, ama-SiC substrate anomoya omuhle wokushisa, okusho ukuthi angasusa ngempumelelo ukushisa okukhiqizwa amadivayisi ngesikhathi sokusebenza, okuthuthukisa ukuthembeka nokuphila kwamadivayisi.


Izici

I-4H-N kanye ne-HPSI uhlobo lwe-polytype ye-silicon carbide (i-SiC), enesakhiwo se-crystal lattice esakhiwe ngamayunithi ayisithupha akhiwe ngama-athomu amane e-carbon kanye ne-silicon amane. Lesi sakhiwo sinikeza izinto ukuhamba kahle kwama-electron kanye nezici ze-voltage zokuqhekeka. Phakathi kwazo zonke izinhlobo ze-SiC polytypes, i-4H-N kanye ne-HPSI isetshenziswa kabanzi emkhakheni we-electronics yamandla ngenxa yokuhamba kwayo okulinganiselayo kwama-electron kanye nemigodi kanye nokuqhuba kwayo ukushisa okuphezulu.

Ukuvela kwezingxenye ze-8inch SiC kumele intuthuko ebalulekile embonini ye-power semiconductor. Izinto ze-semiconductor zendabuko ezisekelwe ku-silicon zithola ukwehla okukhulu kokusebenza ngaphansi kwezimo ezimbi kakhulu njengokushisa okuphezulu kanye nama-voltage aphezulu, kanti izingxenye ze-SiC zingagcina ukusebenza kwazo okuhle kakhulu. Uma kuqhathaniswa nezingxenye ezincane, izingxenye ze-8inch SiC zinikeza indawo enkulu yokucubungula eyodwa, okusho ukusebenza kahle okuphezulu kokukhiqiza kanye nezindleko eziphansi, okubalulekile ekuqhubeni inqubo yokuhweba yobuchwepheshe be-SiC.

Ubuchwepheshe bokukhula kwezingxenye ze-silicon carbide (SiC) ezingama-intshi angu-8 budinga ukunemba okuphezulu kakhulu kanye nobumsulwa. Ikhwalithi yengxenye ye-substrate ithinta ngqo ukusebenza kwamadivayisi alandelayo, ngakho-ke abakhiqizi kumele basebenzise ubuchwepheshe obuthuthukisiwe ukuqinisekisa ukuphelela kwekristalu kanye nobuningi obuphansi besici sezingxenye ze-substrate. Lokhu ngokuvamile kuhilela izinqubo eziyinkimbinkimbi zokufakwa komphunga wamakhemikhali (CVD) kanye namasu okukhula kwekristalu aqondile kanye nokusika. Izingxenye ze-substrate ze-4H-N kanye ne-HPSI SiC zisetshenziswa kakhulu emkhakheni we-elekthronikhi yamandla, njengakuma-converter kagesi asebenza kahle kakhulu, ama-traction inverters ezimoto zikagesi, kanye nezinhlelo zamandla avuselelekayo.

Singahlinzeka nge-substrate ye-4H-N 8inch SiC, amazinga ahlukene ama-wafer esitokhwe se-substrate. Singahlela futhi ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela ukubuza!

Umdwebo Oningiliziwe

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