English

I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch

I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch Isithombe Esifakiwe
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch

Incazelo emfushane:

Sinikeza ukukhetha okuhlukahlukene kwama-wafer e-SiC (Silicon Carbide) asezingeni eliphezulu, ngokugxila kakhulu kuma-wafer e-N-type 4H-N kanye ne-6H-N, afanele ukusetshenziswa kuma-optoelectronics athuthukile, amadivayisi kagesi, kanye nezimo zokushisa okuphezulu. Lawa ma-wafer e-N-type aziwa ngokuqhutshwa kwawo kokushisa okumangalisayo, ukuzinza kukagesi okuvelele, kanye nokuqina okumangalisayo, okwenza afaneleke kakhulu kwizicelo zokusebenza okuphezulu njenge-electronics yamandla, izinhlelo zokushayela izimoto zikagesi, ama-inverter amandla avuselelekayo, kanye nezinsiza zamandla ezimboni. Ngaphezu kweminikelo yethu ye-N-type, siphinde sinikeze ama-wafer e-P-type 4H/6H-P kanye ne-3C SiC ezidingo ezikhethekile, kufaka phakathi amadivayisi e-frequency ephezulu kanye ne-RF, kanye nezinhlelo zokusebenza ze-photonic. Ama-wafer ethu atholakala ngobukhulu obusukela kuma-intshi ama-2 kuya kuma-intshi ayi-8, futhi sinikeza izixazululo ezenzelwe wena ukuhlangabezana nezidingo ezithile zemikhakha ehlukahlukene yezimboni. Ukuze uthole imininingwane eyengeziwe noma imibuzo, sicela ukhululeke ukuxhumana nathi.


Izici

Izakhiwo

4H-N kanye no-6H-N (Ama-SiC Wafers ohlobo lwe-N)

Isicelo:Isetshenziswa kakhulu kuma-electronics anamandla, ama-optoelectronics, kanye nezinhlelo zokusebenza zokushisa okuphezulu.

Ububanzi Bebanga:50.8 mm kuya ku-200 mm.

Ubukhulu:350 μm ± 25 μm, enobukhulu obungakhethwa obungu-500 μm ± 25 μm.

Ukumelana:Uhlobo lwe-N 4H/6H-P: ≤ 0.1 Ω·cm (Ibanga le-Z), ≤ 0.3 Ω·cm (Ibanga le-P); Uhlobo lwe-N 3C-N: ≤ 0.8 mΩ·cm (Ibanga le-Z), ≤ 1 mΩ·cm (Ibanga le-P).

Ubulukhuni:I-Ra ≤ 0.2 nm (i-CMP noma i-MP).

Ubuningi be-Micropipe (MPD):< 1 ngayinye/cm².

I-TTV: ≤ 10 μm kuzo zonke ububanzi.

Ukugoqa: ≤ 30 μm (≤ 45 μm kuma-wafer angu-8 intshi).

Ukukhishwa Komphetho:3 mm kuya ku-6 mm kuye ngohlobo lwe-wafer.

Ukupakisha:Ikhasethi ye-multi-wafer noma isitsha se-single wafer.

Usayizi otholakalayo 3inch 4inch 6inch 8inch

I-HPSI (Ama-Wafer e-SiC Avikelayo Asezingeni Eliphezulu)

Isicelo:Isetshenziselwa amadivayisi adinga ukumelana okuphezulu nokusebenza okuzinzile, njengamadivayisi e-RF, izinhlelo zokusebenza ze-photonic, kanye nezinzwa.

Ububanzi Bebanga:50.8 mm kuya ku-200 mm.

Ubukhulu:Ubukhulu obujwayelekile obungu-350 μm ± 25 μm kanye nezinketho zama-wafer amakhulu afinyelela ku-500 μm.

Ubulukhuni:URa ≤ 0.2 nm.

Ubuningi be-Micropipe (MPD): ≤ 1 ngayinye/cm².

Ukumelana:Ukumelana okuphezulu, okuvame ukusetshenziswa ezinhlelweni zokuvikela umswakama.

Ukugoqa: ≤ 30 μm (ngosayizi abancane), ≤ 45 μm ngobubanzi obukhulu.

I-TTV: ≤ 10 μm.

Usayizi otholakalayo 3inch 4inch 6inch 8inch

4H-P、6H-P&3C I-SiC wafer(Ama-Wafer e-SiC ohlobo lwe-P)

Isicelo:Ngokuyinhloko ngamadivayisi anamandla kanye nemvamisa ephezulu.

Ububanzi Bebanga:50.8 mm kuya ku-200 mm.

Ubukhulu:350 μm ± 25 μm noma izinketho ezenziwe ngokwezifiso.

Ukumelana:Uhlobo lwe-P 4H/6H-P: ≤ 0.1 Ω·cm (Ibanga lika-Z), ≤ 0.3 Ω·cm (Ibanga lika-P).

Ubulukhuni:I-Ra ≤ 0.2 nm (i-CMP noma i-MP).

Ubuningi be-Micropipe (MPD):< 1 ngayinye/cm².

I-TTV: ≤ 10 μm.

Ukukhishwa Komphetho:3 mm kuya ku-6 mm.

Ukugoqa: ≤ 30 μm ngosayizi abancane, ≤ 45 μm ngosayizi abakhulu.

Usayizi otholakalayo 3inch 4inch 6inch5×5 10×10

Ithebula Lemingcele Yedatha Engaphelele

Impahla

Amayintshi ama-2

3intshi

4intshi

6intshi

8intshi

Uhlobo

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Ububanzi

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Ubukhulu

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

Ubulukhuni

Ububanzi be-Ra ≤ 0.2nm

Ububanzi be-Ra ≤ 0.2nm

Ububanzi be-Ra ≤ 0.2nm

Ububanzi be-Ra ≤ 0.2nm

Ububanzi be-Ra ≤ 0.2nm

I-Warp

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

I-TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Krwela/Gubungula

I-CMP/MP

I-MPD

<1inyanga/cm-2

<1inyanga/cm-2

<1inyanga/cm-2

<1inyanga/cm-2

<1inyanga/cm-2

Isimo

Isiyingi, Isicaba esingu-16mm; Ubude obungu-22mm; Ubude obungu-30/32.5mm; Ubude obungu-47.5mm; ISINOTHI; ISINOTHI;

I-Bevel

45°, I-SEMI Spec; Isimo C

 Ibanga

Izinga lokukhiqiza le-MOS ne-SBD; Izinga locwaningo; Izinga eliyi-dummy, Izinga le-Seed wafer

Amazwi

Ububanzi, Ubukhulu, Ukuqondiswa, imininingwane engenhla ingenziwa ngezifiso ngesicelo sakho

 

Izicelo

·Amandla kagesi

Ama-wafer e-SiC ohlobo lwe-N abalulekile kumadivayisi kagesi anamandla ngenxa yekhono lawo lokuphatha i-voltage ephezulu kanye nogesi ophezulu. Avame ukusetshenziswa kuma-power converter, ama-inverter, kanye nama-motor drive ezimbonini ezifana namandla avuselelekayo, izimoto zikagesi, kanye nokuzishintshashintsha kwezimboni.

· Optoelectronics
Izinto ze-SiC zohlobo lwe-N, ikakhulukazi zezinhlelo zokusebenza ze-optoelectronic, zisetshenziswa kumadivayisi anjenge-light-emitting diodes (ama-LED) kanye nama-laser diodes. Ukushisa kwazo okuphezulu kanye ne-wide bandgap kuzenza zilungele amadivayisi e-optoelectronic asebenza kahle kakhulu.

·Izicelo Zokushisa Okuphezulu
Ama-wafer e-SiC angu-4H-N 6H-N afaneleka kahle ezindaweni ezishisa kakhulu, njengezinzwa namadivayisi kagesi asetshenziswa ezindizeni, ezimotweni, nasezindaweni zezimboni lapho ukushabalaliswa kokushisa kanye nokuqina emazingeni okushisa aphezulu kubalulekile.

·Amadivayisi e-RF
Ama-wafer e-SiC angu-4H-N 6H-N asetshenziswa kumadivayisi e-radio frequency (RF) asebenza ezindaweni ezisebenzisa imvamisa ephezulu. Asetshenziswa ezinhlelweni zokuxhumana, ubuchwepheshe be-radar, kanye nokuxhumana ngesathelayithi, lapho kudingeka khona ukusebenza kahle kwamandla aphezulu kanye nokusebenza kahle.

·Izinhlelo Zokusebenza Ze-Photonic
Kuma-photonics, ama-SiC wafers asetshenziselwa amadivayisi afana nama-photodetector nama-modulators. Izakhiwo ezihlukile zale nto zivumela ukuthi isebenze kahle ekukhiqizeni ukukhanya, ukushintshashintsha, kanye nokutholwa ezinhlelweni zokuxhumana kwe-optical kanye namadivayisi okuthwebula izithombe.

·Izinzwa
Ama-wafer e-SiC asetshenziswa ezinhlotsheni ezahlukene zezinzwa, ikakhulukazi ezindaweni ezinzima lapho ezinye izinto zingase zingasebenzi khona. Lokhu kufaka phakathi izinzwa zokushisa, ingcindezi, kanye namakhemikhali, ezibalulekile emikhakheni efana nezimoto, uwoyela negesi, kanye nokuqapha imvelo.

·Izinhlelo Zokushayela Izimoto Zikagesi
Ubuchwepheshe be-SiC budlala indima ebalulekile ezimotweni zikagesi ngokuthuthukisa ukusebenza kahle kanye nokusebenza kwezinhlelo zokushayela. Ngama-semiconductor kagesi e-SiC, izimoto zikagesi zingafinyelela impilo yebhethri engcono, izikhathi zokushaja ngokushesha, kanye nokusebenza kahle kwamandla okukhulu.

·Izinzwa Ezithuthukisiwe kanye Neziguquli Ze-Photonic
Kubuchwepheshe bezinzwa obuthuthukisiwe, ama-wafer e-SiC asetshenziselwa ukudala izinzwa ezinembe kakhulu zezinhlelo zokusebenza kumarobhothi, kumadivayisi ezokwelapha, kanye nokuqapha imvelo. Kuma-converter e-photonic, izakhiwo ze-SiC ziyasetshenziswa ukuze kuvunyelwe ukuguqulwa kwamandla kagesi abe amasignali okukhanya, okubalulekile kwezokuxhumana kanye nengqalasizinda ye-inthanethi esheshayo.

Imibuzo Nezimpendulo

Q：Kuyini i-4H ku-4H SiC?
A："4H" ku-4H I-SiC ibhekisela esakhiweni sekristalu se-silicon carbide, ikakhulukazi ifomu eliyi-hexagonal elinezendlalelo ezine (H). I-"H" ikhombisa uhlobo lwe-polytype oluyi-hexagonal, oluhlukanisa kwamanye ama-polytype e-SiC njengo-6H noma u-3C.

Q：Iyini i-conductivity yokushisa ye-4H-SiC?
A:Ukushisa kwe-4H-SiC (Silicon Carbide) cishe kungu-490-500 W/m·K ekushiseni kwegumbi. Lokhu kushisa okuphezulu kwenza kube kuhle kakhulu ekusetshenzisweni kwe-elekthronikhi yamandla kanye nasezindaweni zokushisa okuphezulu, lapho ukushabalalisa ukushisa okuphumelelayo kubalulekile khona.

  • Okwedlule:
  • Olandelayo:

    • Imikhiqizo Ehlobene

    Bhala umlayezo wakho lapha bese uwuthumela kithi
    Cindezela u-enter ukuze useshe noma u-ESC ukuze uvale