Uhlobo lwe-SiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch ubukhulu: ＞10mm

Incazelo emfushane:

I-4H-N Type SiC Ingot (Dummy Grade) iyinto esezingeni eliphezulu esetshenziswa ekuthuthukiseni nasekuhlolweni kwamadivayisi e-semiconductor athuthukile. Ngezakhiwo zayo eziqinile zikagesi, ezishisayo, nezomshini, ilungele ukusetshenziswa kwamandla aphezulu kanye nokushisa okuphezulu. Le nto ifaneleka kakhulu ocwaningweni nasekuthuthukisweni kwe-elekthronikhi yamandla, izinhlelo zezimoto, kanye nemishini yezimboni. Itholakala ngobukhulu obuhlukahlukene, kufaka phakathi ububanzi obungu-2 intshi, 3 intshi, 4 intshi, kanye no-6 intshi, le ngothi yenzelwe ukuhlangabezana nezidingo ezinzima zemboni ye-semiconductor ngenkathi inikeza ukusebenza okuhle kakhulu nokuthembeka.

Sithumelele i-imeyili

Izici

Isicelo

Amandla kagesi:Isetshenziswa ekukhiqizweni kwama-transistors kagesi asebenza kahle kakhulu, ama-diode, kanye nama-rectifiers ezisetshenziswa ezimbonini nasezimotweni.

Izimoto Zikagesi (i-EV):Isetshenziswa ekukhiqizeni amamojula kagesi ezinhlelo zokushayela kagesi, ama-inverter, kanye namashaja.

Izinhlelo Zamandla Avuselelekayo:Kubalulekile ekuthuthukiseni amadivayisi okuguqula amandla asebenzayo ezinhlelweni zokugcina amandla elanga, umoya kanye namandla.

Izindiza kanye Nokuvikela:Kusetshenziswa ezingxenyeni ezisebenzisa imvamisa ephezulu kanye namandla aphezulu, okuhlanganisa izinhlelo ze-radar kanye nokuxhumana kwesathelayithi.

Izinhlelo Zokulawula Izimboni:Isekela izinzwa ezithuthukisiwe namadivayisi okulawula ezindaweni ezidinga kakhulu.

Izakhiwo

ukuhanjiswa komoya.
Izinketho Zobubanzi: 2-intshi, 3-intshi, 4-intshi, kanye no-6-intshi.
Ubukhulu: >10mm, ukuqinisekisa ukuthi izinto zokwakha zinkulu ukuze kusikwe futhi kucutshungulwe i-wafer.
Uhlobo: Ibanga Eliyimbumbulu, elisetshenziswa kakhulu ekuhlolweni nasekuthuthukisweni okungeyona idivayisi.
Uhlobo Lwenkampani Yokuthwala: Uhlobo lwe-N, olwenza ngcono izinto zamadivayisi wamandla asebenza kahle kakhulu.
Ukushisa Okushisayo: Kuhle kakhulu, kulungele ukushabalalisa ukushisa okuphumelelayo kuma-electronics kagesi.
Ukumelana: Ukumelana okuphansi, okuthuthukisa ukuhambisana nokusebenza kahle kwamadivayisi.
Amandla Okusebenza: Phezulu, okuqinisekisa ukuqina nokuqina ngaphansi kokucindezeleka kanye nokushisa okuphezulu.
Izakhiwo Zokukhanya: Zibonakala kalula ebangeni elibonakalayo le-UV, okwenza zifaneleke ukusetshenziswa kwezinzwa zokukhanya.
Ubuningi obuphelele: Buphansi, okufaka isandla ekhwalithini ephezulu yamadivayisi enziwe.
Imininingwane ye-SiC ingot
Izinga: Ukukhiqiza;
Usayizi: 6inch;
Ububanzi: 150.25mm +0.25:
Ubukhulu: >10mm;
Ukuma Komphezulu:4°ukuya<11-20>+0.2°:
Ukuma okuyisisekelo okuyisicaba: <1-100>+5°:
Ubude obuyisisekelo obuyisicaba: 47.5mm+1.5 ;
Ukumelana: 0.015-0.02852:
Ipayipi elincane: <0.5;
I-BPD: <2000;
I-TSD: <500;
Izindawo ze-Polytype: Azikho;
Ububanzi kanye nokujula kwe-Fdge :<3,:lmm;
Ama-Edge Qracks: 3,
Ukupakisha: Ikesi le-Wafer;
Uma ufuna ama-oda amaningi noma ukwenza ngokwezifiso ezithile, amanani angahluka. Sicela uxhumane nomnyango wethu wokuthengisa ukuze uthole isilinganiso esilungiselelwe wena ngokusekelwe ezidingweni zakho kanye nobuningi bakho.