Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4 intshi esingu-6 intshi se-ICP

Incazelo emfushane:

Ipuleti le-ceramic le-SiC liyisici esisebenza kahle kakhulu esakhiwe nge-Silicon Carbide emsulwa kakhulu, eyenzelwe ukusetshenziswa ezindaweni ezishisayo kakhulu, zamakhemikhali, kanye nezamakhenikhi. Idume ngobulukhuni bayo obungavamile, ukuhanjiswa kokushisa, kanye nokumelana nokugqwala, ipuleti le-SiC lisetshenziswa kabanzi njengesithwali se-wafer, i-susceptor, noma ingxenye yesakhiwo embonini ye-semiconductor, LED, photovoltaic, kanye nezindiza.

Sithumelele i-imeyili

Izici

Ipuleti le-ceramic le-SiC Isifinyezo

Njengoba inamandla okushisa afinyelela ku-1600°C kanye nokumelana okuhle kakhulu namagesi asabelayo kanye nezindawo ze-plasma, ipuleti le-SiC liqinisekisa ukusebenza okuqhubekayo phakathi nezinqubo zokusika, ukubekwa, kanye nokusabalalisa ezimweni zokushisa okuphezulu. Isakhiwo sayo esincane esiminyene, esingenazo izimbobo sinciphisa ukukhiqizwa kwezinhlayiya, okwenza kube kuhle kakhulu ekusetshenzisweni okuhlanzekile kakhulu ezindaweni zokuhlanza noma zegumbi lokuhlanza.

Isicelo sepuleti le-ceramic le-SiC

1. Ukukhiqizwa Kwe-semiconductor

Amapuleti e-ceramic e-SiC avame ukusetshenziswa njengezithwali ze-wafer, ama-susceptor, kanye namapuleti e-pedestal emishinini yokukhiqiza i-semiconductor efana ne-CVD (Chemical Vapor Deposition), i-PVD (Physical Vapor Deposition), kanye nezinhlelo zokuqopha. Ukushisa kwawo okuhle kakhulu kanye nokwanda okuphansi kokushisa kuwavumela ukuthi agcine ukusatshalaliswa kokushisa okufanayo, okubalulekile ekucutshungulweni kwe-wafer okunembe kakhulu. Ukumelana kwe-SiC namagesi aqothulayo nama-plasma kuqinisekisa ukuqina ezindaweni ezinzima, kusiza ekunciphiseni ukungcola kwezinhlayiya kanye nokugcinwa kwemishini.

2. Imboni ye-LED - Ukuqopha kwe-ICP

Emkhakheni wokukhiqiza we-LED, amapuleti e-SiC ayizingxenye ezibalulekile ezinhlelweni zokuqopha ze-ICP (Inductively Coupled Plasma). Asebenza njengezibambi ze-wafer, ahlinzeka ngeplatifomu eqinile neqinile yokusekela ama-wafer e-sapphire noma e-GaN ngesikhathi sokucubungula i-plasma. Ukumelana kwawo okuhle kakhulu kwe-plasma, ukuthamba komphezulu, kanye nokuqina kobukhulu kusiza ukuqinisekisa ukunemba okuphezulu kokuqopha kanye nokufana, okuholela ekukhuleni kwesivuno kanye nokusebenza kwedivayisi kuma-chip e-LED.

3. I-Photovoltaics (PV) kanye ne-Solar Energy

Amapuleti e-ceramic e-SiC nawo asetshenziswa ekukhiqizweni kwamaseli elanga, ikakhulukazi ngesikhathi sokushisa okuphezulu kanye nezinyathelo zokufaka i-annealing. Ukungangeni kwawo emazingeni okushisa aphezulu kanye nekhono lokumelana nokugoba kuqinisekisa ukucubungula okuqhubekayo kwama-wafer e-silicon. Ngaphezu kwalokho, ingozi yawo yokungcola okuphansi ibalulekile ekugcineni ukusebenza kahle kwamaseli e-photovoltaic.

Izakhiwo zepuleti le-ceramic le-SiC

1. Amandla Nokuqina Okumangalisayo Kwemishini

Amapuleti e-ceramic e-SiC abonisa amandla aphezulu kakhulu okusebenza, ngamandla avamile okugoba adlula i-400 MPa kanye nobunzima be-Vickers obufinyelela ku->2000 HV. Lokhu kuwenza amelane kakhulu nokuguguleka kokusebenza, ukuklwebheka, kanye nokuguquka, okuqinisekisa impilo ende yenkonzo ngisho nangaphansi komthwalo omkhulu noma ukujikeleza okuphindaphindiwe kokushisa.

2. Ukushisa Okuphezulu Kokushisa

I-SiC inokushisa okuhle kakhulu (ngokuvamile i-120–200 W/m·K), okuvumela ukuthi isabalalise ukushisa ngokulinganayo ebusweni bayo. Lesi sici sibalulekile ezinqubweni ezifana nokusika i-wafer, ukubekwa, noma ukuthungwa, lapho ukufana kwezinga lokushisa kuthinta ngqo isivuno somkhiqizo kanye nekhwalithi.

3. Ukuzinza Okuphezulu Kokushisa

Njengoba inezinga eliphezulu lokuncibilika (2700°C) kanye ne-coefficient ephansi yokwanda kokushisa (4.0 × 10⁻⁶/K), amapuleti e-SiC ceramic agcina ukunemba kobukhulu kanye nobuqotho besakhiwo ngaphansi kwemijikelezo yokushisa okusheshayo nokupholisa. Lokhu kuwenza afaneleke ukusetshenziswa ezithandweni zokushisa eziphakeme, amakamelo okuhlanza, kanye nasezindaweni ze-plasma.

Izakhiwo Zobuchwepheshe
Inkomba	Iyunithi	Inani
Igama Lezinto		Ukusabela kwe-Silicon Carbide e-Sintered	I-Silicon Carbide Engenangcindezi Engacindezeleki	I-Silicon Carbide Ephinde Yasetshenziswa
Ukwakheka		I-RBSiC	I-SSiC	I-R-SiC
Ubuningi obukhulu	g/cm3	3	3.15 ± 0.03	2.60-2.70
Amandla Okugobeka	I-MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100 (1400°C)
Amandla Okucindezela	I-MPa (kpsi)	1120(158)	3970(560)	> 600
Ubulukhuni	I-Knoop	2700	2800	/
Ukuqeda Ukuqina	I-MPa m1/2	4.5	4	/
Ukuqhuba Okushisayo	I-W/mk	95	120	23
Isilinganiso Sokwanda Kokushisa	10^-6.1/°C	5	4	4.7
Ukushisa Okuqondile	I-Joule/g 0k	0.8	0.67	/
Izinga lokushisa eliphezulu emoyeni	℃	1200	1500	1600
I-Modulus Enwebekayo	I-Gpa	360	410	240

Imibuzo Nezimpendulo zepuleti le-ceramic le-SiC

Q: Yiziphi izakhiwo zepuleti le-silicon carbide?

A: Amapuleti e-silicon carbide (SiC) aziwa ngamandla awo aphezulu, ubulukhuni, kanye nokuqina kokushisa. Anikeza ukuhanjiswa kokushisa okuhle kakhulu kanye nokwanda okuphansi kokushisa, okuqinisekisa ukusebenza okuthembekile ngaphansi kwamazinga okushisa aphezulu. I-SiC nayo ayisebenzi ngamakhemikhali, imelana nama-acid, ama-alkali, kanye nezindawo ze-plasma, okwenza ibe yindawo ekahle kakhulu yokucubungula ama-semiconductor kanye ne-LED. Ubuso bayo obukhulu, obubushelelezi bunciphisa ukukhiqizwa kwezinhlayiya, kugcina ukuhambisana kwegumbi lokuhlanza. Amapuleti e-SiC asetshenziswa kabanzi njengabathwali be-wafer, ama-susceptor, kanye nezingxenye zokusekela ezindaweni ezishisa kakhulu nezigqwalayo kuzo zonke izimboni ze-semiconductor, i-photovoltaic, kanye nezindiza.