I-Silicon Carbide (SiC) Substrate Engangenisi Umswakama Ophakeme Wezingilazi Ze-Ar

I-Silicon Carbide (SiC) Substrate Engavimbeli Kakhulu I-High-Purity Yezibuko Ze-Ar Isithombe Esifakiwe

Incazelo emfushane:

Izisekelo ze-silicon carbide (SiC) ezihlanzekile kakhulu ziyizinto ezikhethekile ezenziwe nge-silicon carbide, ezisetshenziswa kabanzi ekukhiqizweni kwe-elekthronikhi yamandla, amadivayisi e-radio frequency (RF), kanye nezingxenye ze-semiconductor ezivame kakhulu, ezishisa kakhulu. I-Silicon carbide, njengezinto ze-semiconductor ezibanzi, inikeza izakhiwo zikagesi, ezishisayo, nezemishini ezinhle kakhulu, okwenza ifaneleke kakhulu ukusetshenziswa ezindaweni ezine-voltage ephezulu, ezine-frequency ephezulu, kanye nezishisa kakhulu.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubuka Konke Komkhiqizo Wezingcezu Ze-SiC Ezivikela Ukushisa Okuncane

Ama-Wafer e-SiC Asezingeni Eliphezulu Ahlanzekile aklanyelwe ama-electronics anamandla athuthukile, izingxenye ze-RF/microwave, kanye nezinhlelo zokusebenza ze-optoelectronic. Lawa ma-wafer akhiqizwa ngamakristalu angama-single angama-4H- noma ama-6H-SiC asezingeni eliphezulu, kusetshenziswa indlela yokukhula ye-Physical Vapor Transport (PVT) ehlanjululwe kahle, elandelwa yi-deep-level compensation annealing. Umphumela uba yi-wafer enezakhiwo ezilandelayo ezivelele:

Ukumelana Okuphezulu Kakhulu: ≥1×10¹² Ω·cm, okunciphisa ngempumelelo ukuvuza kwemisinga kumadivayisi okushintsha ane-voltage ephezulu.
Igebe Elibanzi (~3.2 eV): Iqinisekisa ukusebenza okuhle kakhulu ezindaweni ezishisa kakhulu, ezisezingeni eliphezulu, kanye nezisebenzisa imisebe eminingi.
Ukuqhuba Okushisayo Okungavamile: >4.9 W/cm·K, enikeza ukushabalalisa ukushisa okuphumelelayo ezinhlelweni zokusebenza ezinamandla aphezulu.
Amandla Aphezulu Okusebenza Kwemishini: Ngobunzima be-Mohs obungu-9.0 (obulandela idayimane kuphela), ukwanda okuphansi kokushisa, kanye nokuqina okuqinile kwamakhemikhali.
Ubuso Obubushelelezi Ngokwe-Atomic: I-Ra < 0.4 nm kanye nobuningi besici < 1/cm², ilungele ukwenziwa kwe-MOCVD/HVPE epitaxy kanye ne-micro-nano.

Osayizi Abatholakalayo: Osayizi abajwayelekile bahlanganisa ama-50, 75, 100, 150, kanye nama-200 mm (2"–8"), kanye nobubanzi obungokwezifiso obutholakalayo obufika ku-250 mm.
Ububanzi Bokujiya: 200–1,000 μm, ngokubekezelela okungu-±5 μm.

Inqubo Yokukhiqiza Ama-SiC Wafers Angenawo Ukushisa Okuncane

Ukulungiswa Kwempuphu Ye-SiC Ehlanzekile Kakhulu

Izinto Zokuqala: Impuphu ye-SiC yebanga le-6N, ehlanziwe kusetshenziswa i-vacuum sublimation enezigaba eziningi kanye nokwelashwa ngokushisa, okuqinisekisa ukungcoliswa kwensimbi okuphansi (i-Fe, i-Cr, i-Ni < 10 ppb) kanye nokufakwa okuncane kwe-polycrystalline.

Ukukhula Kwekristalu Elilodwa Elishintshiwe le-PVT

Indawo ezungezile: I-Near-vacuum (10⁻³–10⁻² Torr).
Izinga lokushisa: I-Graphite crucible eshiswa ku-~2,500 °C nge-gradient yokushisa elawulwayo engu-ΔT ≈ 10–20 °C/cm.
Ukugeleza Kwegesi Nomklamo Wokusha: Izihlukanisi ezifakwe ngendlela yokubhoboza nezimbobo ziqinisekisa ukusatshalaliswa okufanayo komphunga futhi zivimbela i-nucleation engafuneki.
Okuphakelayo Okunamandla Nokujikeleza: Ukugcwaliswa kabusha kwempuphu ye-SiC kanye nokujikeleza kwe-crystal-rod kuholela ekuminyaneni okuphansi kokuhlukana (<3,000 cm⁻²) kanye nokuqondiswa okuhlala njalo kwama-4H/6H.

Ukufakwa Kwesinxephezelo Esijulile

I-Hydrogen Anneal: Kwenziwa emoyeni we-H₂ emazingeni okushisa aphakathi kuka-600–1,400 °C ukuze kusebenze izicupho ezijulile futhi kuzinziswe abathwali bangaphakathi.
Ukuphuza i-doping okungeyona i-Al (Ongakukhetha): Ukufakwa kwe-Al (umamukeli) kanye ne-N (umnikeli) ngesikhathi sokukhula noma ngemva kokukhula kwe-CVD ukuze kwakheke amabhangqa aqinile omamukeli-abanikeli, okuqhuba iziqongo zokumelana.

Ukusikwa Okunembile Nokugoqa Okunezigaba Eziningi

Ukusaha Ngentambo Yedayimane: Ama-wafer asikiwe abe ugqinsi oluyi-200–1,000 μm, anomonakalo omncane kanye nokubekezelelana okungu-±5 μm.
Inqubo Yokugoqa: Iziqhoboshi zedayimane ezilandelanayo eziqobayo nezicolekile zisusa umonakalo wesaha, zilungiselela i-wafer ukuthi ipholishwe.

Ukupholisha Kwemishini Yamakhemikhali (i-CMP)

Imidiya Yokupholisha: I-Nano-oxide (SiO₂ noma i-CeO₂) slurry kusisombululo se-alkaline esithambile.
Ukulawulwa Kwenqubo: Ukupholisha okucindezela kancane kunciphisa ukugoba, kufinyelela ukugoba kwe-RMS okungu-0.2–0.4 nm futhi kususe imihuzuko emincane.

Ukuhlanza Nokupakisha Kokugcina

Ukuhlanzwa kwe-Ultrasonic: Inqubo yokuhlanza enezinyathelo eziningi (i-organic solvent, ukwelashwa nge-asidi/isisekelo, kanye nokuhlanza ngamanzi ahlanzekile) endaweni yokuhlanza ye-Class-100.
Ukuvala Nokupakisha: Ukomisa i-wafer ngokuhlanzwa kwe-nitrogen, kuvaliwe ezikhwameni zokuvikela ezigcwele i-nitrogen futhi kupakishwe emabhokisini angaphandle alwa nokudlidliza nokudlidliza.

Imininingwane yama-Semi-Insulating SiC Wafers

Ukusebenza Komkhiqizo	Ibanga P	Ibanga D
I. Amapharamitha e-Crystal	I. Amapharamitha e-Crystal	I. Amapharamitha e-Crystal
Uhlobo lwe-Crystal Polytype	4H	4H
Inkomba Yokubukeza a	>2.6 @589nm	>2.6 @589nm
Izinga Lokumunca a	≤0.5% @450-650nm	≤1.5% @450-650nm
Ukudluliselwa kwe-MP (Okungagqokwanga)	≥66.5%	≥66.2%
UHaze a	≤0.3%	≤1.5%
Ukufakwa kwe-Polytype a	Akuvunyelwe	Indawo eqongelelekayo ≤20%
Ubuningi be-Micropipe a	≤0.5 /cm²	≤2 /cm²
I-Hexagonal Void a	Akuvunyelwe	Akukho
Ukufakwa Okunezinhlangothi a	Akuvunyelwe	Akukho
Ukufakwa kwe-MP	Akuvunyelwe	Akukho
II. Amapharamitha Omshini	II. Amapharamitha Omshini	II. Amapharamitha Omshini
Ububanzi	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Ukuqondiswa Komphezulu	{0001} ±0.3°	{0001} ±0.3°
Ubude Obuphansi Obuyinhloko	I-Notch	I-Notch
Ubude Besibili Obuyisicaba	Ayikho ifulethi lesibili	Ayikho ifulethi lesibili
Ukuqondiswa Kwe-Notch	<1-100> ±2°	<1-100> ±2°
I-Notch Angle	90° +5° / -1°	90° +5° / -1°
Ukujula kwe-Notch	1 mm ukusuka onqenqemeni +0.25 mm / -0.0 mm	1 mm ukusuka onqenqemeni +0.25 mm / -0.0 mm
Ukwelashwa Okuphezulu	Ubuso obungu-C, ubuso obungu-Si: Ukupholisha Kwe-Chemo-Mechanical (CMP)	Ubuso obungu-C, ubuso obungu-Si: Ukupholisha Kwe-Chemo-Mechanical (CMP)
Umphetho we-Wafer	I-Chamfered (Eyindilinga)	I-Chamfered (Eyindilinga)
Ubulukhuni Bomphezulu (AFM) (5μm x 5μm)	Si-face, C-face: Ra ≤ 0.2 nm	Si-face, C-face: Ra ≤ 0.2 nm
Ubukhulu (iTropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
I-LTV (iTropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Ukwehluka Kobukhulu Obuphelele (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Bow (Absolute Value) a (Tropel)	≤ 5 μm	≤ 15 μm
I-Warp a (Tropel)	≤ 15 μm	≤ 30 μm
III. Amapharamitha Omphezulu	III. Amapharamitha Omphezulu	III. Amapharamitha Omphezulu
I-Chip/Notch	Akuvunyelwe	≤ ama-pcs ama-2, ubude nobubanzi ngabunye ≤ 1.0 mm
Khuhla i-a (Si-face, CS8520)	Ubude obuphelele ≤ 1 x Ububanzi	Ubude obuphelele ≤ 3 x Ububanzi
I-Particle a (Si-face, CS8520)	≤ ama-pcs angu-500	Akukho
Uqhekeko	Akuvunyelwe	Akuvunyelwe
Ukungcola	Akuvunyelwe	Akuvunyelwe

Izicelo Eziyinhloko Zama-Semi-Insulating SiC Wafers

Ama-elekthronikhi Anamandla Aphezulu: Ama-MOSFET asekelwe ku-SiC, ama-diode e-Schottky, kanye namamojula kagesi ezimoto zikagesi (ama-EV) azuza emandleni e-SiC okumelana okuphansi kanye namandla aphezulu kagesi.
I-RF kanye ne-Microwave: Ukusebenza kwe-SiC okunemvamisa ephezulu kanye nokumelana nemisebe kulungele ama-amplifier esiteshi se-5G base, amamojula e-radar, kanye nokuxhumana kwesathelayithi.
OptoelectronicsAma-UV-LED, ama-blue-laser diode, kanye nama-photodetector asebenzisa ama-substrate e-SiC abushelelezi ngokwe-athomu ukuze kukhule i-epitaxial efanayo.
Ukuzwa Kwemvelo Okubi Kakhulu: Ukuqina kwe-SiC emazingeni okushisa aphezulu (>600 °C) kuyenza ifaneleke kakhulu kuma-sensor ezindaweni ezinzima, okuhlanganisa ama-gas turbine kanye ne-nuclear detectors.
Izindiza kanye Nokuvikela: I-SiC inikeza ukuqina kwama-elekthronikhi kagesi kumasathelayithi, izinhlelo ze-missile, kanye nama-elekthronikhi ezindiza.
Ucwaningo Oluthuthukisiwe: Izixazululo ezenziwe ngokwezifiso ze-quantum computing, i-micro-optics, nezinye izinhlelo zokusebenza zocwaningo ezikhethekile.

Imibuzo Evame Ukubuzwa

Kungani i-SiC evikela kancane kune-SiC eqhubayo?
I-SiC evikela kancane ihlinzeka ngokumelana okuphezulu kakhulu, okunciphisa ukuvuza kwemisinga kumadivayisi ane-voltage ephezulu kanye ne-frequency ephezulu. I-SiC eqhubayo ifaneleka kakhulu kuzinhlelo zokusebenza lapho kudingeka khona ukuhanjiswa kukagesi.
Ingabe lawa ma-wafer angasetshenziswa ekukhuleni kwe-epitaxial?
Yebo, lawa ma-wafer alungele i-epi futhi alungiselelwe i-MOCVD, i-HVPE, noma i-MBE, ngokwelashwa kwendawo kanye nokulawula amaphutha ukuqinisekisa ikhwalithi ephezulu yengqimba ye-epitaxial.
Uqinisekisa kanjani ukuhlanzeka kwe-wafer?
Inqubo yokuhlanza ye-Class-100, ukuhlanzwa kwe-ultrasonic okunezinyathelo eziningi, kanye nokupakishwa okuvalwe nge-nitrogen kuqinisekisa ukuthi ama-wafer awanayo ingcoliso, izinsalela, kanye nemiklwebhe emincane.
Isikhathi sokuhola sama-oda singakanani?
Amasampula ngokuvamile athunyelwa zingakapheli izinsuku zebhizinisi eziyi-7-10, kuyilapho ama-oda okukhiqiza evame ukulethwa emavikini angu-4-6, kuye ngobukhulu be-wafer ethile kanye nezici ezenziwe ngokwezifiso.
Ungakwazi yini ukunikeza izimo ezenziwe ngokwezifiso?
Yebo, singakha ama-substrate angokwezifiso ngezimo ezahlukahlukene ezifana namafasitela acwebezelayo, ama-V-grooves, amalensi ayindilinga, nokuningi.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.