Indlela Yokukhulisa Imishini Ye-Sapphire Ingot Czochralski CZ Yokukhiqiza Ama-Wafers E-Sapphire angu-2inch-12inch

Incazelo emfushane:

Imishini Yokukhulisa Ingot yeSapphire (i-Czochralski Method)​​iyisistimu esezingeni eliphezulu eyenzelwe ukukhula kwe-sapphire single-crystal okuhlanzekile kakhulu, okunesici esincane. Indlela ye-Czochralski (CZ) ivumela ukulawula okunembile kwesivinini sokudonsa ikristalu yembewu (0.5–5 mm/h), izinga lokujikeleza (5–30 rpm), kanye nokushintshashintsha kwezinga lokushisa endaweni yokucwilisa ye-iridium, okukhiqiza amakristalu alinganayo afinyelela ku-300 mm ububanzi. Lo mshini usekela ukulawula ukuqondiswa kwekristalu ye-C/A-plane​​, okuvumela ukukhula kwe-optical-grade, i-electronic-grade, kanye ne-doped spapphire (isb., i-Cr³⁺ ruby, i-Ti³⁺ star spapphire).

I-XKH inikeza izixazululo eziphelele, okuhlanganisa ukwenza ngezifiso imishini (ukukhiqizwa kwe-wafer engu-2–12-intshi), ukwenza ngcono inqubo (ubuningi besici <100/cm²), kanye nokuqeqeshwa kobuchwepheshe, ngomkhiqizo wanyanga zonke wama-wafer angu-5,000+ wezinhlelo zokusebenza ezifana ne-LED substrates, i-GaN epitaxy, kanye nokupakishwa kwe-semiconductor.


Izici

Isimiso Sokusebenza

Indlela ye-CZ isebenza ngezinyathelo ezilandelayo:
1. Ukuncibilikisa Izinto Zokusetshenziswa: Ubumsulwa obuphezulu I-Al₂O₃ (ubumsulwa >99.999%) iyancibilikiswa ku-iridium crucible ku-2050–2100°C.
2. I-Seed Crystal Isingeniso: I-seed crystal yehliswa ekuncibilikeni, kulandelwe ukudonsa okusheshayo ukuze kwakheke intamo (ububanzi <1 mm) ukuze kuqedwe ukuhlukana.
3. Ukwakheka Kwamahlombe Nokukhula Okukhulu: Ijubane lokudonsa lehliswa libe ngu-0.2–1 mm/h, kancane kancane landisa ububanzi bekristalu libe usayizi oqondiwe (isb., amasentimitha angu-4–12).
4. Ukucwilisa Nokupholisa: Ikristalu ipholiswa ku-0.1–0.5°C/min ukuze kuncishiswe ukuqhekeka okubangelwa ukucindezeleka kokushisa.
5. Izinhlobo zekristalu ezihambisanayo:
Ibanga Le-elekthronikhi: Izisekelo ze-semiconductor (TTV <5 μm)
Ibanga Lokukhanya: Amafasitela e-UV laser (ukudluliselwa >90%@200 nm)
Izinhlobo Ezihlanganisiwe: I-Ruby (i-Cr³⁺ concentration 0.01–0.5 wt.%), ipayipi le-sapphire eluhlaza okwesibhakabhaka

Izingxenye Zesistimu Eyinhloko

1. Uhlelo Lokuncibilikisa​​
I-Iridium Crucible: Imelana nokushisa okungu-2300°C, ayigqwali, iyahambisana nokuncibilika okukhulu (100–400 kg).
Isithando Sokushisa Esingeniswayo​: Ukulawula izinga lokushisa okuzimele kwezindawo eziningi (±0.5°C), ama-gradients okushisa alungiselelwe kahle.

2. Uhlelo Lokudonsa Nokujikeleza​​
I-Servo Motor Enembe Kakhulu​​: Ukulungiswa kokudonsa okungu-0.01 mm/h, ukujikeleza okugxilile <0.01 mm.
I-Magnetic Fluid Seal: Ukudluliselwa okungathintani nokukhula okuqhubekayo (> amahora angu-72).

3. Uhlelo Lokulawula Ukushisa​​
Ukulawulwa kwe-PID Closed-Loop​: Ukulungiswa kwamandla ngesikhathi sangempela (50–200 kW) ukuze kuzinziswe insimu yokushisa.
Ukuvikelwa Kwegesi Engasebenzi​​: Ingxube ye-Ar/N₂ (ubumsulwa obungu-99.999%) ukuvimbela ukungcoliswa.

4. Ukuzenzakalela kanye nokuqapha​​
Ukuqapha Ububanzi be-CCD: Impendulo yesikhathi sangempela (ukunemba ± 0.01 mm).
I-Thermography ye-Infrared: Iqapha isimo se-interface esiqinile-esiwuketshezi.

Ukuqhathanisa Indlela ye-CZ vs. KY

Ipharamitha Indlela ye-CZ Indlela ye-KY
Usayizi wekristalu ophezulu Amasentimitha angu-300 (300 mm) 400 mm (ingot emise okwepheya)
Ubuningi obuphelele <100/cm² <50/cm²
Izinga Lokukhula​ 0.5–5 mm/h 0.1–2 mm/h
Ukusetshenziswa Kwamandla 50–80 kWh/kg 80–120 kWh/kg
Izicelo​​ Izisekelo ze-LED, i-GaN epitaxy Amafasitela abonakalayo, ama-ingot amakhulu
Izindleko Okumaphakathi (ukutshalwa kwezimali okuphezulu kwemishini) Inqubo ephezulu (eyinkimbinkimbi)

Izinhlelo Zokusebenza Eziyinhloko

1. Imboni Yezikhombisi-ndlela
I-GaN Epitaxial Substrates: Ama-wafer angu-2–8-intshi (i-TTV <10 μm) ama-Micro-LED nama-laser diode.
Ama-SOI Wafers: Ubulukhuni bendawo <0.2 nm kuma-chips ahlanganiswe nge-3D.

2. Optoelectronics​​
Amafasitela e-UV Laser​: Amelana nobuningi bamandla angu-200 W/cm² kuma-optics e-lithography.
Izingxenye ze-Infrared: I-coefficient yokumunca <10⁻³ cm⁻¹ yezithombe zokushisa.

3. I-Electronics Yabathengi​​
Izimbozo Zekhamera Ye-Smartphone: Ukuqina kwe-Mohs okungu-9, 10 × ukuthuthukiswa kokumelana nokuklwebheka.
Izibonisi zewashi elihlakaniphile: Ubukhulu obungu-0.3–0.5 mm, ukudlulisa okungaphezulu kuka-92%.

4. Ukuvikela kanye nezindiza​​
Amafasitela e-Nuclear Reactor: Ukubekezelela imisebe kufika ku-10¹⁶ n/cm².
Izibuko Ze-Laser Ezinamandla Aphezulu: Ukuguqulwa Kokushisa <λ/20@1064 nm.

Izinsizakalo ze-XKH

1. Ukwenza Ngokwezifiso Imishini​​
Umklamo Wegumbi Elikwazi Ukukhula​​: Ukucushwa kwe-Φ200–400 mm kokukhiqizwa kwe-wafer engu-2–12-intshi.
Ukuguquguquka kwe-Doping: Isekela i-rare-earth (Er/Yb) kanye ne-transition-metal (Ti/Cr) doping yezakhiwo ze-optoelectronic ezenzelwe wena.

2. Ukusekelwa Kokuphela
Ukuthuthukiswa Kwenqubo: Izindlela zokupheka eziqinisekiswe kusengaphambili (50+) zamadivayisi e-LED, e-RF, kanye nezingxenye eziqiniswe ngemisebe.
Inethiwekhi Yesevisi Yomhlaba Wonke: Ukuxilongwa okukude amahora angu-24 ngosuku, izinsuku ezingu-7 ngesonto kanye nokulungiswa kwasendaweni kanye newaranti yezinyanga ezingu-24.

3. Ukucubungula Okuphansi​​
Ukwenziwa kwe-Wafer: Ukusika, ukugaya, nokupholisha ama-wafer angu-2–12-intshi (C/A-plane).
Imikhiqizo Enenani Elingeziwe:
Izingxenye Zokukhanya: Amafasitela e-UV/IR (ubukhulu obungu-0.5–50 mm).
Izinto Zokuhlobisa Ezisezingeni: I-Cr³⁺ ruby ​​(eqinisekiswe yi-GIA), i-Ti³⁺ star sapphire.

4. Ubuholi Bobuchwepheshe​​
Izitifiketi: Ama-wafer ahambisana ne-EMI.
Amalungelo Obunikazi: Amalungelo Obunikazi Ayinhloko ekusungulweni kwezindlela ze-CZ.

Isiphetho

Imishini yendlela ye-CZ inikeza ukuhambisana okukhulu, amazinga aphansi kakhulu okukhubazeka, kanye nokuqina kwenqubo okuphezulu, okwenza kube yisilinganiso semboni sezinhlelo zokusebenza ze-LED, semiconductor, kanye nezokuvikela. I-XKH inikeza ukwesekwa okuphelele kusukela ekusetshenzisweni kwemishini kuya ekucutshungulweni kwangemva kokukhula, okuvumela amakhasimende ukuthi afinyelele ekukhiqizweni kwekristalu ye-sapphire okungabizi kakhulu nokusebenza kahle.

Isithando sokukhulisa i-ingot yesafire 4
Isithando sokukhulisa i-ingot yesafire 5

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