Indlela Yokukhulisa Imishini Ye-Sapphire Ingot Czochralski CZ Yokukhiqiza Ama-Wafers E-Sapphire angu-2inch-12inch
Isimiso Sokusebenza
Indlela ye-CZ isebenza ngezinyathelo ezilandelayo:
1. Ukuncibilikisa Izinto Zokusetshenziswa: Ubumsulwa obuphezulu I-Al₂O₃ (ubumsulwa >99.999%) iyancibilikiswa ku-iridium crucible ku-2050–2100°C.
2. I-Seed Crystal Isingeniso: I-seed crystal yehliswa ekuncibilikeni, kulandelwe ukudonsa okusheshayo ukuze kwakheke intamo (ububanzi <1 mm) ukuze kuqedwe ukuhlukana.
3. Ukwakheka Kwamahlombe Nokukhula Okukhulu: Ijubane lokudonsa lehliswa libe ngu-0.2–1 mm/h, kancane kancane landisa ububanzi bekristalu libe usayizi oqondiwe (isb., amasentimitha angu-4–12).
4. Ukucwilisa Nokupholisa: Ikristalu ipholiswa ku-0.1–0.5°C/min ukuze kuncishiswe ukuqhekeka okubangelwa ukucindezeleka kokushisa.
5. Izinhlobo zekristalu ezihambisanayo:
Ibanga Le-elekthronikhi: Izisekelo ze-semiconductor (TTV <5 μm)
Ibanga Lokukhanya: Amafasitela e-UV laser (ukudluliselwa >90%@200 nm)
Izinhlobo Ezihlanganisiwe: I-Ruby (i-Cr³⁺ concentration 0.01–0.5 wt.%), ipayipi le-sapphire eluhlaza okwesibhakabhaka
Izingxenye Zesistimu Eyinhloko
1. Uhlelo Lokuncibilikisa
I-Iridium Crucible: Imelana nokushisa okungu-2300°C, ayigqwali, iyahambisana nokuncibilika okukhulu (100–400 kg).
Isithando Sokushisa Esingeniswayo: Ukulawula izinga lokushisa okuzimele kwezindawo eziningi (±0.5°C), ama-gradients okushisa alungiselelwe kahle.
2. Uhlelo Lokudonsa Nokujikeleza
I-Servo Motor Enembe Kakhulu: Ukulungiswa kokudonsa okungu-0.01 mm/h, ukujikeleza okugxilile <0.01 mm.
I-Magnetic Fluid Seal: Ukudluliselwa okungathintani nokukhula okuqhubekayo (> amahora angu-72).
3. Uhlelo Lokulawula Ukushisa
Ukulawulwa kwe-PID Closed-Loop: Ukulungiswa kwamandla ngesikhathi sangempela (50–200 kW) ukuze kuzinziswe insimu yokushisa.
Ukuvikelwa Kwegesi Engasebenzi: Ingxube ye-Ar/N₂ (ubumsulwa obungu-99.999%) ukuvimbela ukungcoliswa.
4. Ukuzenzakalela kanye nokuqapha
Ukuqapha Ububanzi be-CCD: Impendulo yesikhathi sangempela (ukunemba ± 0.01 mm).
I-Thermography ye-Infrared: Iqapha isimo se-interface esiqinile-esiwuketshezi.
Ukuqhathanisa Indlela ye-CZ vs. KY
| Ipharamitha | Indlela ye-CZ | Indlela ye-KY |
| Usayizi wekristalu ophezulu | Amasentimitha angu-300 (300 mm) | 400 mm (ingot emise okwepheya) |
| Ubuningi obuphelele | <100/cm² | <50/cm² |
| Izinga Lokukhula | 0.5–5 mm/h | 0.1–2 mm/h |
| Ukusetshenziswa Kwamandla | 50–80 kWh/kg | 80–120 kWh/kg |
| Izicelo | Izisekelo ze-LED, i-GaN epitaxy | Amafasitela abonakalayo, ama-ingot amakhulu |
| Izindleko | Okumaphakathi (ukutshalwa kwezimali okuphezulu kwemishini) | Inqubo ephezulu (eyinkimbinkimbi) |
Izinhlelo Zokusebenza Eziyinhloko
1. Imboni Yezikhombisi-ndlela
I-GaN Epitaxial Substrates: Ama-wafer angu-2–8-intshi (i-TTV <10 μm) ama-Micro-LED nama-laser diode.
Ama-SOI Wafers: Ubulukhuni bendawo <0.2 nm kuma-chips ahlanganiswe nge-3D.
2. Optoelectronics
Amafasitela e-UV Laser: Amelana nobuningi bamandla angu-200 W/cm² kuma-optics e-lithography.
Izingxenye ze-Infrared: I-coefficient yokumunca <10⁻³ cm⁻¹ yezithombe zokushisa.
3. I-Electronics Yabathengi
Izimbozo Zekhamera Ye-Smartphone: Ukuqina kwe-Mohs okungu-9, 10 × ukuthuthukiswa kokumelana nokuklwebheka.
Izibonisi zewashi elihlakaniphile: Ubukhulu obungu-0.3–0.5 mm, ukudlulisa okungaphezulu kuka-92%.
4. Ukuvikela kanye nezindiza
Amafasitela e-Nuclear Reactor: Ukubekezelela imisebe kufika ku-10¹⁶ n/cm².
Izibuko Ze-Laser Ezinamandla Aphezulu: Ukuguqulwa Kokushisa <λ/20@1064 nm.
Izinsizakalo ze-XKH
1. Ukwenza Ngokwezifiso Imishini
Umklamo Wegumbi Elikwazi Ukukhula: Ukucushwa kwe-Φ200–400 mm kokukhiqizwa kwe-wafer engu-2–12-intshi.
Ukuguquguquka kwe-Doping: Isekela i-rare-earth (Er/Yb) kanye ne-transition-metal (Ti/Cr) doping yezakhiwo ze-optoelectronic ezenzelwe wena.
2. Ukusekelwa Kokuphela
Ukuthuthukiswa Kwenqubo: Izindlela zokupheka eziqinisekiswe kusengaphambili (50+) zamadivayisi e-LED, e-RF, kanye nezingxenye eziqiniswe ngemisebe.
Inethiwekhi Yesevisi Yomhlaba Wonke: Ukuxilongwa okukude amahora angu-24 ngosuku, izinsuku ezingu-7 ngesonto kanye nokulungiswa kwasendaweni kanye newaranti yezinyanga ezingu-24.
3. Ukucubungula Okuphansi
Ukwenziwa kwe-Wafer: Ukusika, ukugaya, nokupholisha ama-wafer angu-2–12-intshi (C/A-plane).
Imikhiqizo Enenani Elingeziwe:
Izingxenye Zokukhanya: Amafasitela e-UV/IR (ubukhulu obungu-0.5–50 mm).
Izinto Zokuhlobisa Ezisezingeni: I-Cr³⁺ ruby (eqinisekiswe yi-GIA), i-Ti³⁺ star sapphire.
4. Ubuholi Bobuchwepheshe
Izitifiketi: Ama-wafer ahambisana ne-EMI.
Amalungelo Obunikazi: Amalungelo Obunikazi Ayinhloko ekusungulweni kwezindlela ze-CZ.
Isiphetho
Imishini yendlela ye-CZ inikeza ukuhambisana okukhulu, amazinga aphansi kakhulu okukhubazeka, kanye nokuqina kwenqubo okuphezulu, okwenza kube yisilinganiso semboni sezinhlelo zokusebenza ze-LED, semiconductor, kanye nezokuvikela. I-XKH inikeza ukwesekwa okuphelele kusukela ekusetshenzisweni kwemishini kuya ekucutshungulweni kwangemva kokukhula, okuvumela amakhasimende ukuthi afinyelele ekukhiqizweni kwekristalu ye-sapphire okungabizi kakhulu nokusebenza kahle.









