Imikhiqizo
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Ithempulethi ye-AlN ku-FSS engu-2inch 4inch NPSS/FSS ye-AlN yendawo ye-semiconductor
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I-Gallium Nitride (GaN) Epitaxial Ekhulele kuma-Wafers e-Sapphire angu-4 intshi angu-6 intshi e-MEMS
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I-Gallium Nitride ku-Silicon wafer 4inch 6inch Oklanyelwe i-Substrate ye-Si, i-Resistivity, kanye nezinketho ze-N-type/P
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Ama-Wafer e-Epitaxial e-GaN-on-SiC enziwe ngokwezifiso (100mm, 150mm) – Izinketho Eziningi Ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)
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Ama-Wafer e-GaN-on-Diamond angu-4 intshi angu-6 intshi Ubukhulu obuphelele be-epi (micron) 0.6 ~ 2.5 noma okwenzelwe izinhlelo zokusebenza ze-High-Frequency
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Ibhokisi lokuthwala i-wafer le-FOSB elinezikhala ezingama-25 ze-wafer engu-12 intshi Isikhala esinembile semisebenzi ezenzakalelayo Izinto ezihlanzekile kakhulu
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Ibhokisi lokuthumela elivulekile elingu-12 intshi （300mm） Ibhokisi lokuthwala i-wafer le-FOSB elinama-pcs angu-25 lokuphatha nokuthumela i-Wafer Imisebenzi ezenzakalelayo
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Amalensi e-Precision Monocrystalline Silicon (Si) – Osayizi kanye nezingubo ezenziwe ngokwezifiso ze-Optoelectronics kanye ne-Infrared Imaging
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Amalensi e-High-Purity Single Crystal Silicon (Si) Aklanyelwe Ngokwezifiso – Osayizi Nezimbozo Ezilungiselelwe Ukufakwa Kwe-Infrared kanye ne-THz (1.2-7µm, 8-12µm)
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Iwindi Elibonakalayo Le-Sapphire Step-Type Optical Elilungiselelwe Ngokwezifiso, I-Al2O3 Single Crystal, Ubumsulwa Obuphezulu, Ububanzi obungu-45mm, Ubukhulu obungu-10mm, Ukusikwa Kwe-Laser Nokupholishwa
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Iwindi Lesinyathelo Se-Sapphire Elisebenza Kakhulu, I-Al2O3 Single Crystal, Embozwe Ngokucacile, Izimo Nobukhulu Obunziwe Ngokwezifiso Zezicelo Zokukhanya Okuqondile
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Iphini Lokuphakamisa I-Sapphire Elisebenza Kakhulu, I-Al2O3 Single Crystal Ehlanzekile Yezinhlelo Zokudlulisa I-Wafer – Osayizi Abangokwezifiso, Ukuqina Okuphezulu Kwezicelo Ezinembile