Izindaba - I-TSMC Ivala I-Silicon Carbide Engu-12-Inch Ye-New Frontier, Ukufakwa Kwamasu Ezintweni Zokuphatha Ukushisa Ezibalulekile ze-AI Era

Okuqukethwe

1. Ushintsho Lobuchwepheshe: Ukwanda Kwe-Silicon Carbide Nezinselele Zayo

2. Ushintsho Oluhlelekile lwe-TSMC: Ukuphuma ku-GaN kanye nokubheja ku-SiC

3. Ukuncintisana Kwezinto Ezibalulekile: Ukungathathelwa Indawo kwe-SiC

4. Izimo Zokusebenza: Inguquko Yokuphathwa Kwe-Thermal kuma-AI Chips kanye nama-Elektroniki esizukulwane esilandelayo

5. Izinselele Zesikhathi Esizayo: Izithiyo Zobuchwepheshe Nokuncintisana Kwemboni

Ngokusho kwe-TechNews, imboni ye-semiconductor yomhlaba wonke isingene enkathini eqhutshwa yi-artificial intelligence (AI) kanye ne-high-performance computing (HPC), lapho ukuphathwa kokushisa kuvele khona njengengqinamba eyinhloko ethinta ukwakheka kwe-chip kanye nokuthuthuka kwenqubo. Njengoba izakhiwo zokupakisha ezithuthukisiwe ezifana ne-3D stacking kanye nokuhlanganiswa kwe-2.5D ziqhubeka nokwandisa ukuminyana kwe-chip kanye nokusetshenziswa kwamandla, i-ceramic substrates yendabuko ayisakwazi ukuhlangabezana nezidingo ze-thermal flux. I-TSMC, inkampani ehola phambili emhlabeni yokukhiqiza i-wafer, iphendula kule nselele ngokushintsha kwezinto eziqinile: yamukela ngokugcwele i-single-crystal silicon carbide (SiC) substrates ezingama-intshi angu-12 ngenkathi iphuma kancane kancane ebhizinisini le-gallium nitride (GaN). Lesi sinyathelo asisho nje kuphela ukulinganiswa kabusha kwesu lezinto ze-TSMC kodwa futhi sigcizelela indlela ukuphathwa kokushisa okushintshe ngayo kusuka "kubuchwepheshe obusekelayo" kuya "enzuzweni yokuncintisana eyinhloko."

I-Silicon Carbide: Ngaphandle Kwe-Elektroniki Yamandla

I-silicon carbide, eyaziwa ngezakhiwo zayo ezibanzi ze-bandgap semiconductor, ibilokhu isetshenziswa kuma-electronics asebenza kahle kakhulu njengama-inverter ezimoto zikagesi, izilawuli zezimoto zezimboni, kanye nengqalasizinda yamandla avuselelekayo. Kodwa-ke, amandla e-SiC adlulela ngale kwalokhu. Njengoba inamandla okushisa angavamile angaba ngu-500 W/mK—edlula kakhulu ama-substrate avamile e-ceramic njenge-aluminium oxide (Al₂O₃) noma i-sapphire—i-SiC manje isikulungele ukubhekana nezinselele ezikhulayo zokushisa kwezicelo eziphezulu.

Ama-Accelerator e-AI kanye neNkinga Yokushisa

Ukwanda kwama-accelerator e-AI, ama-processor esikhungo sedatha, kanye nezibuko ezihlakaniphile ze-AR kuye kwaqinisa imingcele yendawo kanye nezinkinga zokuphathwa kokushisa. Kumadivayisi agqokwayo, isibonelo, izingxenye ze-microchip ezibekwe eduze kweso zidinga ukulawulwa kokushisa okunembile ukuqinisekisa ukuphepha nokuzinza. Isebenzisa ubuchwepheshe bayo beminyaka eminingi ekwakhiweni kwe-wafer engamasentimitha angu-12, i-TSMC ithuthukisa ama-substrate e-SiC e-single-crystal endaweni enkulu ukuze ithathe indawo ye-ceramics yendabuko. Leli cebo livumela ukuhlanganiswa okungenamthungo emigqeni yokukhiqiza ekhona, kulinganisa isivuno kanye nezinzuzo zezindleko ngaphandle kokudinga ukulungiswa okuphelele kokukhiqiza.

Izinselele Zobuchwepheshe Nokusungula Izinto Ezintsha.

Nakuba ama-substrate e-SiC okuphathwa kokushisa engadingi amazinga aqinile okukhubazeka kukagesi afunwa amadivayisi kagesi, ubuqotho bekristalu buhlala bubalulekile. Izici zangaphandle ezifana nokungcola noma ukucindezeleka zingaphazamisa ukudluliswa kwe-phonon, zonakalise ukuhanjiswa kokushisa, futhi zibangele ukushisa ngokweqile kwendawo, ekugcineni kuthinte amandla omshini kanye nokuba yisicaba komphezulu. Kuma-wafer angu-12-intshi, i-warpage kanye nokuguquguquka kuyizinto ezibaluleke kakhulu, njengoba kuthinta ngqo ukubopha kwe-chip kanye nemikhiqizo yokupakisha ethuthukisiwe. Ngakho-ke ukugxila embonini kushintshe kusukela ekuqedeni amaphutha kagesi kuya ekuqinisekiseni ubuningi obufanayo, ukugoba okuphansi, kanye nokuhlelwa okuphezulu komphezulu - izidingo zokukhiqizwa kwesisindo se-substrate ye-SiC ekhiqiza kakhulu.

.Indima ye-SiC ekuPakisheni Okuthuthukisiwe

Inhlanganisela ye-SiC yokuqhuba ukushisa okuphezulu, ukuqina komshini, kanye nokumelana nokushaqeka kokushisa ikubeka njengoshintsho olukhulu ekupakishweni kwe-2.5D kanye ne-3D:

Ukuhlanganiswa kwe-2.5D:Ama-chip afakwa kuma-silicon noma kuma-interposer e-organic anezindlela zesignali ezimfushane nezisebenzayo. Izinselele zokushabalalisa ukushisa lapha zigxile kakhulu.
Ukuhlanganiswa kwe-3D:Ama-chip abekwe phezulu nge-through-silicon vias (ama-TSV) noma i-hybrid bonding ifinyelela ubuningi be-interconnect obuphezulu kakhulu kodwa ibhekene nengcindezi yokushisa ethuthukisiwe. I-SiC ayisebenzi nje kuphela njengento yokushisa engasebenzi kodwa futhi isebenzisana nezixazululo ezithuthukisiwe njengedayimane noma insimbi ewuketshezi ukuze yakhe izinhlelo "zokupholisa ezihlanganisiwe".

.Ukuphuma Okuhlelekile kusuka ku-GaN

I-TSMC imemezele izinhlelo zokuqeda ukusebenza kwe-GaN ngo-2027, idlulisela izinsiza ku-SiC. Lesi sinqumo sibonisa ukulungiswa kabusha kwesu: ngenkathi i-GaN iphumelela kakhulu ekusetshenzisweni kwemvamisa ephezulu, amakhono okuphatha ukushisa okuphelele kwe-SiC kanye nokusabalala kuhambisana kangcono nombono wesikhathi eside we-TSMC. Ukushintshela kuma-wafer angu-12-intshi kuthembisa ukwehliswa kwezindleko kanye nokufana kwenqubo okuthuthukisiwe, naphezu kwezinselele ekusikeni, ekupholisheni, nasekuhleleni.

Ngaphandle Kwezimoto: Imingcele Emisha ye-SiC

Ngokomlando, i-SiC ibilokhu ifana namadivayisi kagesi ezimoto. Manje, i-TSMC icabanga kabusha ngezinhlelo zayo zokusebenza:

I-SiC yohlobo lwe-N oluqhubayo:Isebenza njengabasabalalisi bokushisa kuma-accelerator e-AI kanye nama-processor asebenza kahle kakhulu.
Ukuvikela i-SiC:Isebenza njengezihlanganisi ekwakhiweni kwe-chiplet, ilinganisela ukuhlukaniswa kukagesi nokuqhutshwa kokushisa.

Lezi zinto ezintsha zibeka i-SiC njengezinto eziyisisekelo zokuphathwa kokushisa kuma-AI kanye nama-chip esikhungo sedatha.

Indawo Yezinto Ezibonakalayo

Ngenkathi idayimane (1,000–2,200 W/mK) kanye ne-graphene (3,000–5,000 W/mK) zinikeza ukuhanjiswa kokushisa okuphezulu, izindleko zazo ezinkulu kanye nemikhawulo yokukhula kuvimbela ukwamukelwa okujwayelekile. Ezinye izindlela ezifana nokuhlanganiswa kobuso bensimbi ewuketshezi noma ukupholisa nge-microfluidic kanye nezithiyo zezindleko. “Indawo enhle” ye-SiC—ukuhlanganisa ukusebenza, amandla omshini, kanye nokukwazi ukukhiqiza—kwenza kube yisisombululo esisebenziseka kakhulu.

Umncintiswano we-TSMC

Ubuchwepheshe be-wafer obuyi-intshi ezingu-12 be-TSMC buyihlukanisa nezimbangi, okwenza kube lula ukuthunyelwa okusheshayo kwamapulatifomu e-SiC. Ngokusebenzisa ingqalasizinda ekhona kanye nobuchwepheshe bokupakisha obuthuthukisiwe njenge-CoWoS, i-TSMC ihlose ukuguqula izinzuzo zezinto ezibonakalayo zibe izixazululo zokushisa ezisezingeni lesistimu. Ngesikhathi esifanayo, izinkampani ezinkulu zezimboni ezifana ne-Intel zibeka phambili ukulethwa kwamandla ngemuva kanye nokwakhiwa ngokubambisana kwamandla okushisa, okugcizelela ushintsho lomhlaba wonke oluya ekusungulweni okugxile ekushiseni.

Isikhathi sokuthunyelwe: Septhemba-28-2025

I-TSMC Ivala I-Silicon Carbide Engu-12-Inch Ye-New Frontier, Ukufakwa Kwamasu Ezintweni Zokuphatha Ukushisa Ezibalulekile ze-AI Era​

I-TSMC Ivala I-Silicon Carbide Engu-12-Inch Ye-New Frontier, Ukufakwa Kwamasu Ezintweni Zokuphatha Ukushisa Ezibalulekile ze-AI Era