Izimpahla Ezingahluziwe Ezibalulekile Zokukhiqiza I-Semiconductor: Izinhlobo zama-Wafer Substrates

Ama-Wafer Substrates Njengezinto Ezibalulekile kumadivayisi we-Semiconductor

Ama-wafer substrates abathwali abaphathekayo bamadivayisi we-semiconductor, futhi izakhiwo zawo ezibonakalayo zinquma ngokuqondile ukusebenza kwedivayisi, izindleko, nezinkambu zohlelo lokusebenza. Ngezansi kunezinhlobo eziyinhloko zama-wafer substrates kanye nezinzuzo kanye nokubi:

1.I-silicon (Si)

• Ukwabelana Kwemakethe:Ibalelwa ngaphezu kwama-95% emakethe ye-semiconductor yomhlaba.

• Izinzuzo:

  • Izindleko eziphansi:Izinto zokusetshenziswa eziningi (i-silicon dioxide), izinqubo zokukhiqiza ezivuthiwe, nomnotho oqinile wesikali.

  • Ukuhambisana kwenqubo ephezulu:Ubuchwepheshe be-CMOS buvuthwe kakhulu, busekela ama-node athuthukile (isb, i-3nm).

  • Ikhwalithi yekristalu enhle kakhulu:Ama-wafer anobubanzi obukhulu (ikakhulukazi ama-intshi angu-12, amayintshi angu-18 ngaphansi kokuthuthukiswa) anobunzima obuncane obuncane angatshalwa.

  • Izakhiwo ezizinzile zemishini:Kulula ukusika, ukupholisha, nokubamba.

• Ububi:

  • I-bandgap emincane (1.12 eV):Ukuvuza okuphezulu kwamanje emazingeni okushisa aphakeme, kukhawulela ukusebenza kahle kwedivayisi yamandla.

  • I-bandgap engaqondile:Ukusebenza kahle kokukhipha ukukhanya okuphansi kakhulu, akufanelekile kumadivayisi e-optoelectronic njengama-LED nama-lasers.

  • Ukuhamba kwama-electron okulinganiselwe:Ukusebenza kwe-high-frequency ephansi uma kuqhathaniswa nama-semiconductors ahlanganisiwe.
    

2.I-Gallium Arsenide (GaAs)

• Izicelo:Imishini ye-RF ye-high-frequency (5G/6G), amadivaysi e-optoelectronic (ama-lasers, amaseli elanga).

• Izinzuzo:

  • Ukuhamba kwe-electron ephezulu (5–6× okwe-silicon):Ifanele ukusetshenziswa kwesivinini esikhulu, imvamisa ephezulu njengokuxhumana kwegagasi lemilimitha.

  • I-bandgap eqondile (1.42 eV):Ukuguqulwa kwe-photoelectric okusebenza kahle kakhulu, isisekelo samalaser e-infrared nama-LED.

  • Izinga lokushisa eliphezulu nokumelana nemisebe:Ifanele i-aerospace kanye nezindawo ezinokhahlo.

• Ububi:

  • Izindleko eziphezulu:Izinto eziyivelakancane, ukukhula kwekristalu okunzima (okujwayele ukugudluka), usayizi we-wafer olinganiselwe (ikakhulukazi amayintshi angu-6).

  • I-Brittle mechanics:Ijwayele ukuphuka, okuholela ekukhiqizeni okuphansi kokucubungula.

  • Ubuthi:I-Arsenic idinga ukuphathwa okuqinile kanye nokulawulwa kwemvelo.

3. I-Silicon Carbide (SiC)

• Izicelo:Amadivayisi anamandla okushisa aphezulu nanamandla kagesi aphezulu (ama-inverter e-EV, iziteshi zokushaja), i-aerospace.

• Izinzuzo:

  • I-bandgap ebanzi (3.26 eV):Amandla okuphuka okuphezulu (10× awe-silicon), ukubekezelela izinga lokushisa eliphezulu (izinga lokushisa elisebenzayo>200 °C).

  • Ukusebenza okuphezulu kwe-thermal (≈3× i-silicon):Ukukhipha ukushisa okuhle kakhulu, okuvumela ukuminyana kwamandla esistimu ephezulu.

  • Ukulahlekelwa kokushintsha okuphansi:Ithuthukisa ukusebenza kahle kokuguqulwa kwamandla.

• Ububi:

  • Ukulungiswa kwe-substrate okuyinselele:Ukukhula kwekristalu okuhamba kancane (> 1 isonto), ukulawulwa kokukhubazeka okunzima (ama-micropipe, ukuhlukaniswa), izindleko eziphezulu kakhulu (5-10× silicon).

  • Usayizi omncane we-wafer:Ikakhulukazi amayintshi angu-4–6; 8-intshi isathuthukiswa.

  • Kunzima ukucubungula:Kunzima kakhulu (Mohs 9.5), okwenza ukusika nokupholisha kudle isikhathi.

4. I-Gallium Nitride (GaN)

• Izicelo:Imishini yamandla emvamisa ephezulu (ukushaja okusheshayo, iziteshi eziyisisekelo ze-5G), ama-LED/ama-lasers aluhlaza.

• Izinzuzo:

  • Ukuhamba kwe-electron ephezulu kakhulu + i-bandgap ebanzi (3.4 eV):Ihlanganisa imvamisa ephezulu (>100 GHz) nokusebenza kwevoltage ephezulu.

  • Ukumelana okuphansi:Yehlisa ukulahleka kwamandla edivayisi.

  • I-Heteroepitaxy iyahambisana:Ivame ukutshalwa ku-silicon, isafire, noma i-SiC substrates, kunciphisa izindleko.

• Ububi:

  • Ukukhula kwekristalu eyodwa kunzima:I-Heteroepitaxy ijwayelekile, kodwa ukungafani kwe-lattice kubangela ukukhubazeka.

  • Izindleko eziphezulu:Ama-substrates omdabu we-GaN abiza kakhulu (i-wafer engu-2-intshi ingabiza izinkulungwane ezimbalwa zama-USD).

  • Izinselelo zokuthembeka:Izenzakalo ezifana nokuwa kwamanje zidinga ukuthuthukiswa.

5. I-Indidium Phosphide (InP)

• Izicelo:Ukuxhumana okushesha kakhulu kwe-optical (ama-lasers, ama-photodetectors), amadivaysi e-terahertz.

• Izinzuzo:

  • Ukuhamba kwama-electron aphezulu kakhulu:Isekela ukusebenza kwe->100 GHz, okudlula ama-GaAs.

  • I-bandgap eqondile enobude be-wavelength:Okubalulekile kokuxhumana okungu-1.3–1.55 μm kwefiber optical.

• Ububi:

  • I-brittle futhi ibiza kakhulu:Izindleko ze-substrate zidlula i-silicon engu-100×, osayizi be-wafer abalinganiselwe (amayintshi angu-4–6).

6. I-Sapphire (Al₂O₃)

• Izicelo:Ukukhanyisa kwe-LED (i-GaN epitaxial substrate), ingilazi yekhava ye-electronics yabathengi.

• Izinzuzo:

  • Izindleko eziphansi:Kushibhe kakhulu kune-SiC/GaN substrates.

  • Ukuzinza kwamakhemikhali okuhle kakhulu:Imelana nokugqwala, i-insulating kakhulu.

  • Ukubonisa ngale:Ifanele izakhiwo ze-LED eziqondile.

• Ububi:

  • Ukungafani kwe-lattice enkulu ne-GaN (>13%):Idala ukuminyana kokukhubazeka okuphezulu, idinga izendlalelo zebhafa.

  • I-thermal conductivity engalungile (~1/20 ye-silicon):Ikhawulela ukusebenza kwama-LED anamandla amakhulu.

7. Ama-Ceramic Substrates (AlN, BeO, njll.)

• Izicelo:Izisakazeli zokushisa zamamojula wamandla aphezulu.

• Izinzuzo:

  • I-insulating + high conductivity thermal (AlN: 170–230 W/m·K):Ifanele ukupakishwa okuphezulu kwabantu.

• Ububi:

  • I-Non-single-crystal:Ayikwazi ukusekela ngokuqondile ukukhula kwedivayisi, esetshenziswa kuphela njengama-substrates okupakisha.

8. Ama-substrates akhethekile

• I-SOI (I-Silicon ku-Insulator):

  • Isakhiwo:Isemishi le-silicon/SiO₂/silicon.

  • Izinzuzo:Yehlisa i-parasitic capacitance, i-radiation-hardened, ukucindezelwa kokuvuza (okusetshenziswe ku-RF, MEMS).

  • Ububi:I-30-50% ibiza kakhulu kune-silicon eyinqwaba.

• I-Quartz (SiO₂):Isetshenziswa kuma-photomasks kanye ne-MEMS; ukumelana nokushisa okuphezulu kodwa kuyaphuka kakhulu.

• Idayimane:I-substrate ye-thermal conductivity ephezulu kakhulu (>2000 W/m·K), ngaphansi kwe-R&D yokulahla ukushisa okudlulele.

Ithebula Elifingqiwe Lokuqhathanisa

Izinto Ezibalulekile Zokukhetha I-substrate

• Izidingo zokusebenza:I-GaAs/InP ye-high-frequency; I-SiC ye-high-voltage, izinga lokushisa eliphezulu; I-GaAs/InP/GaN ye-optoelectronics.

• Imikhawulo yezindleko:I-electronics yabathengi ithanda i-silicon; Izinkambu ezisezingeni eliphezulu zingathethelela amaphrimiyamu e-SiC/GaN.

• Ukuhlanganisa inkimbinkimbi:I-Silicon ihlala ingenakushintshwa ukuze ihambisane ne-CMOS.

• Ukuphathwa kokushisa:Izinhlelo zokusebenza zamandla aphezulu zikhetha i-SiC noma i-GaN esekelwe idayimane.

• Ukuvuthwa kochungechunge lokuhlinzeka:Si > Sapphire > GaAs > SiC > GaN > InP.

Ikusasa Trend

Ukuhlanganiswa okuhlukahlukene (isb., i-GaN-on-Si, i-GaN-on-SiC) izobhalansisa ukusebenza nezindleko, ukuthuthukiswa kokushayela ku-5G, izimoto zikagesi, kanye ne-quantum computing.