Izinto Ezibalulekile Okufanele Uzicabangele Ngokulungiselela I-Silicon Carbide Esezingeni Eliphezulu Yekristalu Elilodwa

Izindlela eziyinhloko zokulungiselela i-silicon single crystal zifaka: Ukuthuthwa Komhwamuko Ongokoqobo (i-PVT), Ukukhula Kwesixazululo Esinembewu Ephezulu (i-TSSG), kanye Nokuthuthwa Komhwamuko Ophakeme Wokushisa (i-HT-CVD). Phakathi kwalokhu, indlela ye-PVT isetshenziswa kabanzi ekukhiqizweni kwezimboni ngenxa yemishini yayo elula, ukulula kokulawula, kanye nezindleko eziphansi zemishini kanye nokusebenza.

Amaphuzu Abalulekile Obuchwepheshe Bokukhula Kwe-PVT Kwamakristalu E-Silicon Carbide

Uma ukhulisa amakristalu e-silicon carbide usebenzisa indlela ye-Physical Vapor Transport (PVT), izici zobuchwepheshe ezilandelayo kumele zicatshangelwe:

1. Ukuhlanzeka Kwezinto Ze-Graphite Egumbini Lokukhula: Okuqukethwe kokungcola ezingxenyeni ze-graphite kumele kube ngaphansi kuka-5×10⁻⁶, kuyilapho okuqukethwe kokungcola ku-felt yokushisa kumele kube ngaphansi kuka-10×10⁻⁶. Izinto ezifana no-B no-Al kufanele zigcinwe ngaphansi kuka-0.1×10⁻⁶.
2. Ukukhethwa Okulungile Kwe-Seed Crystal Polarity: Izifundo ezibonisa ubufakazi zibonisa ukuthi ubuso be-C (0001) bufanelekela ukutshala amakristalu angu-4H-SiC, kuyilapho ubuso be-Si (0001) busetshenziselwa ukutshala amakristalu angu-6H-SiC.
3. Ukusetshenziswa Kwamakristalu Embewu Engaxhumekile Ku-Axis: Amakristalu embewu e-Off-axis angashintsha ukulingana kokukhula kwekristalu, anciphise amaphutha kukristalu.
4. Inqubo Yokubopha I-Seed Crystal Esezingeni Eliphezulu.
5. Ukugcina Ukuqina Kwe-Crystal Growth Interface Ngesikhathi Somjikelezo Wokukhula.

Ubuchwepheshe Obubalulekile Bokukhula Kwekristalu Ye-Silicon Carbide

1. Ubuchwepheshe Bokusebenzisa Izidakamizwa Ze-Silicon Carbide Powder
   Ukufaka i-powder ye-silicon carbide ngenani elifanele le-Ce kungazinzisa ukukhula kwamakristalu angama-4H-SiC angawodwa. Imiphumela ewusizo ikhombisa ukuthi ukufaka i-Ce doping kungenza okulandelayo:

• Khulisa izinga lokukhula kwamakristalu e-silicon carbide.
• Lawula ukuqondiswa kokukhula kwekristalu, okwenza kube okufanayo futhi kube njalo.
• Cindezela ukwakheka kokungcola, unciphise amaphutha futhi wenze kube lula ukukhiqizwa kwamakristalu e-single-crystal kanye nekhwalithi ephezulu.
• Vimbela ukugqwala kwekristalu ngemuva futhi uthuthukise isivuno sekristalu elilodwa.

• Ubuchwepheshe Bokulawula I-Gradient Yokushisa Kwe-Axial Ne-Radial
  I-gradient yokushisa ye-axial ithinta kakhulu uhlobo lokukhula kwekristalu kanye nokusebenza kahle. I-gradient yokushisa encane kakhulu ingaholela ekwakhekeni kwe-polycrystalline futhi inciphise amazinga okukhula. I-gradient efanele yokushisa ye-axial kanye ne-radial yenza kube lula ukukhula kwekristalu ye-SiC okusheshayo ngenkathi kugcinwa ikhwalithi yekristalu ezinzile.
• Ubuchwepheshe Bokulawula Ukuhlukaniswa Kwendiza Eyisisekelo (BPD)
  Amaphutha e-BPD avame ukuvela lapho ukucindezeleka kwe-shear ku-crystal kudlula ukucindezeleka kwe-shear okubalulekile kwe-SiC, okusebenzisa izinhlelo zokushelela. Njengoba ama-BPD eqonde ngqo esiqondisweni sokukhula kwe-crystal, akheka ngokuyinhloko ngesikhathi sokukhula kwe-crystal kanye nokupholisa.
• Ubuchwepheshe Bokulungiswa Kwesilinganiso Sokwakheka Kwesigaba Somhwamuko
  Ukwandisa isilinganiso sekhabhoni-kuya-silicon endaweni yokukhula kuyisinyathelo esiphumelelayo sokuqinisa ukukhula kwekristalu elilodwa. Isilinganiso esiphezulu sekhabhoni-kuya-silicon sinciphisa ukuhlanganiswa kwezinyathelo ezinkulu, sigcina ulwazi lokukhula kwekristalu yembewu, futhi sicindezela ukwakheka kwe-polytype.
• Ubuchwepheshe Bokulawula Ukucindezeleka Okuphansi
  Ukucindezeleka ngesikhathi sokukhula kwekristalu kungabangela ukugoba kwezindiza zekristalu, okuholela ekhwalithini ephansi yekristalu noma ngisho nokuqhekeka. Ukucindezeleka okuphezulu kwandisa nokuqhekeka kwendiza eyisisekelo, okungathinta kabi ikhwalithi yesendlalelo se-epitaxial kanye nokusebenza kwedivayisi.

Isithombe sokuskena i-SiC wafer engamasentimitha angu-6

Izindlela Zokunciphisa Ukucindezeleka Kumakristalu:

• Lungisa ukusatshalaliswa kwensimu yezinga lokushisa kanye nemingcele yenqubo ukuze kuvunyelwe ukukhula okucishe kube ukulingana kwamakristalu angawodwa e-SiC.
• Lungiselela isakhiwo esikwazi ukubethelwa ukuze uvumele ukukhula kwekristalu okukhululekile ngemingcele emincane.
• Shintsha amasu okuqinisa ikristalu yembewu ukuze unciphise ukungalingani kokukhula kokushisa phakathi kwekristalu yembewu kanye nesiphathi segraphite. Indlela evamile ukushiya igebe elingu-2 mm phakathi kwesiphathi sekristalu yembewu kanye nesiphathi segraphite.
• Thuthukisa izinqubo zokufaka i-annealing ngokusebenzisa i-in-situ furnace annealing, ukulungisa izinga lokushisa kanye nobude besikhathi sokufaka i-annealing ukuze ukhulule ngokuphelele ukucindezeleka kwangaphakathi.

Amathrendi Esikhathi Esizayo kubuchwepheshe Bokukhula Kwekristalu Ye-Silicon Carbide

Uma sibheka phambili, ubuchwepheshe bokulungiselela i-SiC single crystal obusezingeni eliphezulu buzothuthuka ngalezi zindlela ezilandelayo:

1. Ukukhula Okukhulu
   Ububanzi bamakristalu e-silicon carbide single bushintshe kusukela kumamilimitha ambalwa kuya kosayizi ongu-6-intshi, 8-intshi, kanye nobukhulu obukhulu obungu-12-intshi. Amakristalu e-SiC amakhulu athuthukisa ukusebenza kahle kokukhiqiza, anciphisa izindleko, futhi ahlangabezane nezidingo zamadivayisi anamandla amakhulu.
2. Ukukhula Okusezingeni Eliphezulu
   Amakristalu e-SiC asezingeni eliphezulu abalulekile kumadivayisi asebenza kahle kakhulu. Nakuba kwenziwe intuthuko enkulu, kusekhona amaphutha afana namapayipi amancane, ukudilika, kanye nokungcola, okuthinta ukusebenza kwedivayisi kanye nokuthembeka kwayo.
3. Ukwehliswa Kwezindleko
   Izindleko eziphezulu zokulungiselela i-SiC crystal zinciphisa ukusetshenziswa kwayo emikhakheni ethile. Ukwenza ngcono izinqubo zokukhula, ukuthuthukisa ukusebenza kahle kokukhiqiza, kanye nokunciphisa izindleko zezinto zokusetshenziswa kungasiza ekunciphiseni izindleko zokukhiqiza.
4. Ukukhula Okuhlakaniphile
   Ngokuthuthuka kwe-AI kanye ne-big data, ubuchwepheshe bokukhula kwe-SiC crystal buzosebenzisa izixazululo ezihlakaniphile kakhulu. Ukuqapha nokulawula ngesikhathi sangempela kusetshenziswa izinzwa nezinhlelo ezenzakalelayo kuzothuthukisa ukuzinza kwenqubo kanye nokulawula. Ngaphezu kwalokho, ukuhlaziywa kwe-big data kungathuthukisa amapharamitha okukhula, kuthuthukise ikhwalithi ye-crystal kanye nokusebenza kahle kokukhiqiza.

Ubuchwepheshe bokulungiselela i-silicon carbide single crystal obusezingeni eliphezulu buyinto ebalulekile ocwaningweni lwezinto ze-semiconductor. Njengoba ubuchwepheshe buthuthuka, amasu okukhulisa i-SiC crystal azoqhubeka nokukhula, ahlinzeke ngesisekelo esiqinile sokusetshenziswa emasimini okushisa okuphezulu, ama-frequency aphezulu, kanye namandla aphezulu.