Indlela i-SiC ne-GaN eziguqula ngayo ukupakishwa kwe-Power Semiconductor

Imboni ye-power semiconductor ibhekene noshintsho oluguqukayo oluqhutshwa ukwamukelwa okusheshayo kwezinto ze-wide-bandgap (WBG).I-Silicon Carbide(SiC) kanye neGallium Nitride (GaN) zihamba phambili kulolu shintsho, zivumela amadivayisi kagesi esizukulwane esilandelayo ukuthi asebenze kahle kakhulu, ashintshe ngokushesha, kanye nokusebenza kahle kokushisa okuphezulu. Lezi zinto azichazi nje kuphela izici zikagesi zama-semiconductor kagesi kodwa futhi zidala izinselele namathuba amasha kubuchwepheshe bokupakisha. Ukupakisha okuphumelelayo kubalulekile ukuze kusetshenziswe ngokugcwele amandla amadivayisi e-SiC ne-GaN, ukuqinisekisa ukuthembeka, ukusebenza, kanye nokuphila isikhathi eside ezinhlelweni ezidinga kakhulu njengezimoto zikagesi (ama-EV), izinhlelo zamandla avuselelekayo, kanye ne-electronics yamandla ezimboni.

Izinzuzo ze-SiC ne-GaN

Amadivayisi kagesi avamile e-silicon (Si) abelokhu ebusa imakethe amashumi eminyaka. Kodwa-ke, njengoba isidingo sikhula ngenxa yobuningi bamandla aphezulu, ukusebenza kahle okuphezulu, kanye nezici zokwakheka okuncane, i-silicon ibhekene nemikhawulo yangaphakathi:

• I-voltage elinganiselwe yokuqhekeka, okwenza kube nzima ukusebenza ngokuphepha kuma-voltage aphezulu.

• Isivinini sokushintsha esihamba kancane, okuholela ekulahlekelweni okukhulu kokushintsha kwezinhlelo zokusebenza ezivame kakhulu.

• Ukushisa okuphansi, okuholela ekuqongeleleni kokushisa kanye nezidingo zokupholisa eziqinile.

I-SiC ne-GaN, njenge-WBG semiconductors, zinqoba le mikhawulo:

• I-SiCinikeza i-voltage ephezulu yokuqhekeka, ukuhanjiswa kokushisa okuhle kakhulu (okuphindwe kathathu kuya kane kune-silicon), kanye nokubekezelela izinga lokushisa eliphezulu, okwenza kube kuhle kakhulu ezinhlelweni zamandla aphezulu njengeziguquli kanye nama-traction motor.

• I-GaNihlinzeka ngokushintsha okusheshayo kakhulu, ukumelana okuphansi, kanye nokuhamba kwama-electron okuphezulu, okuvumela ama-converter wamandla amancane, asebenza kahle kakhulu asebenza kumaza aphezulu.

Ngokusebenzisa lezi zinzuzo zezinto ezibonakalayo, onjiniyela bangaklama izinhlelo zamandla ngokusebenza kahle kakhulu, usayizi omncane, kanye nokuthembeka okuthuthukisiwe.

Imiphumela Yokupakishwa Kwamandla

Nakuba i-SiC ne-GaN zithuthukisa ukusebenza kwedivayisi ezingeni le-semiconductor, ubuchwepheshe bokupakisha kumele buthuthuke ukuze bubhekane nezinselele zokushisa, zikagesi, kanye nezemishini. Izinto ezibalulekile okufanele uzicabangele zifaka:

1. Ukuphathwa Kokushisa
   Amadivayisi e-SiC angasebenza emazingeni okushisa angaphezu kuka-200°C. Ukushabalalisa ukushisa okusebenzayo kubalulekile ukuvimbela ukushabalalisa ukushisa nokuqinisekisa ukuthembeka kwesikhathi eside. Izinto ezithuthukisiwe zokushisa (ama-TIM), izisekelo ze-copper-molybdenum, kanye nemiklamo yokusabalalisa ukushisa elungiselelwe kahle kubalulekile. Ukucatshangelwa kokushisa nakho kuthinta ukubekwa kwedayi, ukwakheka kwemodyuli, kanye nosayizi wephakheji iyonke.

2. Ukusebenza Kagesi kanye Nezibungu
   Ijubane eliphezulu lokushintsha i-GaN lenza ama-parasites ephaketheni—njengokungenela kanye nomthamo—abaluleke kakhulu. Ngisho nezinto ezincane ezi-parasites zingaholela ekuqhumeni kwe-voltage ngokweqile, ukuphazamiseka kwe-electromagnetic (EMI), kanye nokulahlekelwa kokushintsha. Amasu okupakisha afana nokubopha i-flip-chip, ama-loop amafushane wamanje, kanye nokulungiselelwa kwe-embedded die kusetshenziswa kakhulu ukunciphisa imiphumela ye-parasites.

3. Ukuthembeka Kwemishini
   I-SiC ibuthakathaka ngokwemvelo, futhi amadivayisi e-GaN-on-Si azwela ekucindezelekeni. Ukupakisha kumele kubhekane nokungalingani kokukhula kokushisa, ukugoba, kanye nokukhathala komshini ukuze kugcinwe ubuqotho bedivayisi ngaphansi kokujikeleza okuphindaphindiwe kokushisa nogesi. Izinto zokubopha ezingaphansi kokucindezeleka okuphansi, ama-substrate ahambisanayo, kanye nokugcwaliswa okuqinile kusiza ekunciphiseni lezi zingozi.

4. Ukuhlanganiswa Okuncane Nokuncane
   Amadivayisi e-WBG avumela ubuningi bamandla aphezulu, okuqhuba isidingo samaphakheji amancane. Amasu okupakisha athuthukisiwe—njenge-chip-on-board (CoB), ukupholisa okunezinhlangothi ezimbili, kanye nokuhlanganiswa kwesistimu-in-package (SiP)—avumela abaklami ukuthi banciphise ukunyathela ngenkathi begcina ukusebenza kanye nokulawula ukushisa. I-Miniaturization iphinde isekele ukusebenza kwemvamisa ephezulu kanye nokusabela okusheshayo ezinhlelweni ze-elekthronikhi zamandla.

Izixazululo Zokupakisha Ezivelayo

Kuvele izindlela eziningana ezintsha zokupakisha ukusekela ukwamukelwa kwe-SiC ne-GaN:

• Izingxenyana Zethusi Elihlanganisiwe Ngokuqondile (i-DBC)kwe-SiC: Ubuchwepheshe be-DBC buthuthukisa ukusabalala kokushisa kanye nokuzinza komshini ngaphansi kwemisinga ephezulu.

• Imiklamo ye-GaN-on-Si Efakiwe: Lokhu kunciphisa ukungena kwe-parasitic futhi kuvumela ukushintsha okusheshayo kakhulu kumamojula amancane.

• Ukufakwa kwe-High Thermal Conductivity: Amakhemikhali okubumba athuthukisiwe kanye nokugcwaliswa okungaphansi kokucindezeleka okuncane kuvimbela ukuqhekeka kanye nokwehlukaniswa ngaphansi kokujikeleza kokushisa.

• Amamojula e-3D nama-Multi-Chip: Ukuhlanganiswa kwabashayeli, izinzwa, namadivayisi kagesi kuphakheji eyodwa kuthuthukisa ukusebenza kwezinga lesistimu futhi kunciphisa isikhala sebhodi.

Lezi zinto ezintsha ziqokomisa indima ebalulekile yokupakisha ekuvuleni amandla aphelele ama-semiconductor e-WBG.

Isiphetho

I-SiC ne-GaN ziguqula ubuchwepheshe be-power semiconductor ngokuyisisekelo. Izakhiwo zazo zikagesi nezokushisa eziphakeme zivumela amadivayisi asheshayo, asebenza kahle kakhulu, futhi akwazi ukusebenza ezindaweni ezinzima. Kodwa-ke, ukuqaphela lezi zinzuzo kudinga amasu okupakisha athuthukile ngokulinganayo abhekana nokuphathwa kokushisa, ukusebenza kukagesi, ukuthembeka komshini, kanye nokunciphisa amandla. Izinkampani ezisungula izinto ezintsha ekupakisheni kwe-SiC ne-GaN zizohola isizukulwane esilandelayo sama-electronics kagesi, zisekela izinhlelo ezisebenzisa amandla kahle nezisebenza kahle kakhulu kuzo zonke imikhakha yezimoto, yezimboni, kanye neyamandla avuselelekayo.

Ngamafuphi, inguquko ekupakishweni kwe-semiconductor yamandla ayihlukaniseki ekukhuleni kwe-SiC ne-GaN. Njengoba imboni iqhubeka nokuqhubekela phambili ekusebenzeni kahle okuphezulu, ubuningi obuphezulu, kanye nokuthembeka okuphezulu, ukupakisha kuzodlala indima ebalulekile ekuhumusheni izinzuzo zemfundiso yenkolo ze-wide-bandgap semiconductors zibe izixazululo ezisebenzayo nezisebenzisekayo.