Ama-wafer e-Indium Antimonide (InSb) Uhlobo lwe-N Uhlobo lwe-P olulungile lwe-Epi olungavulwanga Ama-wafer e-Te doped noma i-Ge doped angu-2 intshi ubukhulu obungu-3 intshi obungu-4 intshi we-Indium Antimonide (InSb)
Izici
Izinketho Zokusebenzisa Izidakamizwa:
1. Akukalungiswa:Lawa ma-wafer awanayo imithi yokwelapha, okwenza afaneleke kakhulu ekusetshenzisweni okukhethekile njengokukhula kwe-epitaxial.
2. I-Doped (Uhlobo lwe-N):I-Tellurium (Te) doping ivame ukusetshenziswa ukudala ama-wafers ohlobo lwe-N, afaneleka kakhulu ezinhlelweni zokusebenza ezifana nezitholi ze-infrared kanye ne-electronics esheshayo.
3. I-Ge Doped (Uhlobo lwe-P):I-doping ye-Germanium (Ge) isetshenziselwa ukudala ama-wafers ohlobo lwe-P, okunikeza ukuhamba kwemigodi ephezulu kwezicelo ze-semiconductor ezithuthukisiwe.
Izinketho Zosayizi:
1. Itholakala ngobubanzi obungu-2 intshi, 3 intshi, kanye no-4 intshi. Lawa ma-wafer anakekela izidingo zobuchwepheshe ezahlukene, kusukela ocwaningweni nasekuthuthukisweni kuya ekukhiqizweni okukhulu.
2. Ukubekezelelana kobubanzi obuqondile kuqinisekisa ukuvumelana phakathi kwamaqoqo, ngobubanzi obungu-50.8±0.3mm (kwama-wafer angu-2-intshi) kanye no-76.2±0.3mm (kwama-wafer angu-3-intshi).
Ukulawula Ubukhulu:
1. Ama-wafer ayatholakala ngobukhulu obungu-500±5μm ukuze asebenze kahle ezinhlelweni ezahlukahlukene.
2. Izilinganiso ezengeziwe ezifana ne-TTV (Total Thickness Variation), i-BOW, kanye ne-Warp zilawulwa ngokucophelela ukuqinisekisa ukufana okuphezulu kanye nekhwalithi.
Ikhwalithi Yomphezulu:
1. Ama-wafers afika nobuso obucwebezelisiwe/obuqotshiwe ukuze kuthuthukiswe ukusebenza kokukhanya kanye nokusebenza kukagesi.
2. Lezi zindawo zilungele ukukhula kwe-epitaxial, zinikeza isisekelo esibushelelezi sokucutshungulwa okuqhubekayo kumadivayisi asebenza kahle kakhulu.
Ukulungele i-Epi:
1. Ama-wafer e-InSb alungele i-epi, okusho ukuthi alungiswa kusengaphambili ukuze kusetshenziswe izinqubo zokufakwa kwe-epitaxial. Lokhu kuwenza abe mahle kakhulu ekusetshenzisweni ekukhiqizweni kwe-semiconductor lapho izingqimba ze-epitaxial zidinga ukukhuliswa phezu kwe-wafer.
Izicelo
1. Izitholi ze-Infrared:Ama-wafer e-InSb avame ukusetshenziswa ekutholakaleni kwe-infrared (IR), ikakhulukazi ebangeni le-infrared eliphakathi nendawo (MWIR). Lawa ma-wafer abalulekile ekuboneni ebusuku, ekuthathweni kwezithombe ezishisayo, kanye nasekusetshenzisweni kwe-infrared spectroscopy.
2. Ama-elekthronikhi Asheshayo:Ngenxa yokuhamba kwawo okuphezulu kwama-electron, ama-InSb wafer asetshenziswa kumadivayisi kagesi asheshayo njenge-transistors ephezulu, amadivayisi e-quantum well, kanye nama-transistors aphezulu e-electron mobility (HEMTs).
3. Amadivayisi Omthombo We-Quantum:Igebe elincane kanye nokuhamba kahle kwama-electron kwenza ama-wafer e-InSb afanele ukusetshenziswa kumadivayisi e-quantum well. Lawa madivayisi ayizingxenye ezibalulekile kuma-laser, kuma-detector, nakwezinye izinhlelo ze-optoelectronic.
4. Amadivayisi e-Spintronic:I-InSb iyahlolwa futhi nasezinhlelweni ze-spintronic, lapho i-electron spin isetshenziselwa ukucubungula ulwazi. Ukuhlanganiswa kwe-spin-orbit okuphansi kwale nto kwenza kube kuhle kakhulu kulawa madivayisi asebenza kahle kakhulu.
5. Izicelo Zokushiswa Kwemisebe yeTerahertz (THz):Amadivayisi asekelwe ku-InSb asetshenziswa ezinhlelweni zokusetshenziswa kwemisebe ye-THZ, okuhlanganisa ucwaningo lwesayensi, ukuthwebula izithombe, kanye nokuhlukaniswa kwezinto. Avumela ubuchwepheshe obuthuthukisiwe njenge-THZ spectroscopy kanye nezinhlelo zokuthwebula izithombe ze-THZ.
6. Amadivayisi e-Thermoelectric:Izakhiwo eziyingqayizivele ze-InSb ziyenza ibe yinto ekhangayo yokusetshenziswa kwe-thermoelectric, lapho ingasetshenziswa khona ukuguqula ukushisa kube ugesi ngempumelelo, ikakhulukazi ezindaweni ezisetshenziswayo njengobuchwepheshe besikhala noma ukukhiqizwa kwamandla ezindaweni ezibucayi.
Amapharamitha Omkhiqizo
| Ipharamitha | Amayintshi amabili | Amasentimitha angu-3 | Amasentimitha angu-4 |
| Ububanzi | 50.8±0.3mm | 76.2±0.3mm | - |
| Ubukhulu | 500±5μm | 650±5μm | - |
| Ubuso | Kupholishiwe/Kuqoshwe | Kupholishiwe/Kuqoshwe | Kupholishiwe/Kuqoshwe |
| Uhlobo Lokusebenzisa Izidakamizwa | Ingafakwanga idophi, i-Te-doped (N), i-Ge-doped (P) | Ingafakwanga idophi, i-Te-doped (N), i-Ge-doped (P) | Ingafakwanga idophi, i-Te-doped (N), i-Ge-doped (P) |
| Ukuqondiswa | (100) | (100) | (100) |
| Iphakheji | Oyedwa | Oyedwa | Oyedwa |
| Ukulungele i-Epi | Yebo | Yebo | Yebo |
Amapharamitha Kagesi e-Te Doped (Uhlobo lwe-N):
- Ukuhamba: 2000-5000 cm²/V·s
- Ukumelana: (1-1000) Ω·cm
- I-EPD (Ubuningi Besici): ≤2000 amaphutha/cm²
Amapharamitha Kagesi e-Ge Doped (Uhlobo lwe-P):
- Ukuhamba: 4000-8000 cm²/V·s
- Ukumelana: (0.5-5) Ω·cm
- I-EPD (Ubuningi Besici): ≤2000 amaphutha/cm²
Isiphetho
Ama-wafer e-Indium Antimonide (InSb) ayizinto ezibalulekile ezinhlobonhlobo zezinhlelo zokusebenza ezisebenza kahle kakhulu emikhakheni ye-elekthronikhi, i-optoelectronics, kanye nobuchwepheshe be-infrared. Ngokunyakaza kwawo okuhle kakhulu kwama-electron, ukuxhumanisa okuphansi kwe-spin-orbit, kanye nezinketho ezahlukene zokusebenzisa i-doping (i-Te yohlobo lwe-N, i-Ge yohlobo lwe-P), ama-wafer e-InSb alungele ukusetshenziswa kumadivayisi afana nama-infrared detectors, ama-transistors anesivinini esikhulu, amadivayisi e-quantum well, kanye namadivayisi e-spintronic.
Ama-wafer atholakala ngobukhulu obuhlukahlukene (amasentimitha angu-2, amasentimitha angu-3, namasentimitha angu-4), anokulawula ukujiya okunembile kanye nezindawo ezilungele i-epi, okuqinisekisa ukuthi ahlangabezana nezidingo eziqinile zokwenziwa kwe-semiconductor yesimanje. Lawa ma-wafer afanele ukusetshenziswa emikhakheni efana nokutholwa kwe-IR, ama-elekthronikhi asheshayo, kanye nemisebe ye-THz, okuvumela ubuchwepheshe obuthuthukisiwe ocwaningweni, embonini, kanye nasekuvikeleni.
Umdwebo Oningiliziwe
