I-Gallium Nitride ku-Silicon wafer 4inch 6inch Oklanyelwe i-Substrate ye-Si, i-Resistivity, kanye nezinketho ze-N-type/P

Incazelo emfushane:

Ama-Wafer ethu e-Gallium Nitride ku-Silicon (GaN-on-Si) enziwe ngokwezifiso aklanyelwe ukuhlangabezana nezidingo ezikhulayo zezinhlelo zokusebenza ze-elekthronikhi ezisebenza ngesivinini esikhulu nezinamandla aphezulu. Atholakala kokubili ngobukhulu be-wafer obuyi-intshi ezingu-4 no-6, lawa ma-wafer anikeza izinketho zokwenza ngokwezifiso ze-Si substrate orientation, resistivity, kanye nohlobo lwe-doping (uhlobo lwe-N/uhlobo lwe-P) ukuze avumelane nezidingo ezithile zesicelo. Ubuchwepheshe be-GaN-on-Si buhlanganisa izinzuzo ze-gallium nitride (GaN) ne-silicon (Si) substrate eshibhile, okwenza kube lula ukuphathwa kokushisa okungcono, ukusebenza kahle okuphezulu, kanye nesivinini sokushintsha okusheshayo. Nge-bandgap yawo ebanzi kanye nokumelana okuphansi kukagesi, lawa ma-wafer afanele ukuguqulwa kwamandla, izinhlelo zokusebenza ze-RF, kanye nezinhlelo zokudlulisa idatha ngesivinini esikhulu.

Sithumelele i-imeyili

Izici

●Isikhala Esibanzi Sebhendi:I-GaN (3.4 eV) inikeza ukuthuthuka okukhulu ekusebenzeni kwemvamisa ephezulu, amandla aphezulu, kanye nokushisa okuphezulu uma kuqhathaniswa ne-silicon yendabuko, okwenza ibe yindawo efaneleke kakhulu kumadivayisi kagesi kanye nama-RF amplifier.
●Ukuqondiswa kwe-Substrate ye-Si ngokwezifiso:Khetha kusuka kuzindlela ezahlukene ze-substrate ze-Si ezifana ne-<111>, <100>, nezinye ukuze uvumelane nezidingo ezithile zedivayisi.
●Ukumelana Okulungiselelwe Ngokwezifiso:Khetha phakathi kwezinketho ezahlukene zokumelana ne-Si, kusukela ekuvikeleni okuncane kuya ekumelaneni okuphezulu kanye nokumelana okuphansi ukuze uthuthukise ukusebenza kwedivayisi.
●Uhlobo Lokusebenzisa Izidakamizwa:Itholakala nge-doping yohlobo lwe-N noma lwe-P ukuze ivumelane nezidingo zamadivayisi kagesi, ama-transistors e-RF, noma ama-LED.
●I-Voltage Ephezulu Yokuqhekeka:Ama-wafer e-GaN-on-Si ane-voltage ephezulu yokuqhekeka (kufika ku-1200V), okuwavumela ukuthi aphathe izinhlelo zokusebenza ze-voltage ephezulu.
●Isivinini Sokushintsha Esisheshayo:I-GaN inokuhamba okuphezulu kwama-electron kanye nokulahlekelwa kokushintsha okuphansi kune-silicon, okwenza ama-wafer e-GaN-on-Si afaneleke kakhulu kumasekethe anesivinini esikhulu.
●Ukusebenza Okuthuthukisiwe Kokushisa:Naphezu kokuqhuba okuphansi kokushisa kwe-silicon, i-GaN-on-Si isanikeza ukuzinza okuphezulu kokushisa, kanye nokushabalalisa ukushisa okungcono kunamadivayisi e-silicon avamile.

Imininingwane Yobuchwepheshe

Ipharamitha	Inani
Usayizi we-Wafer	Amasentimitha angu-4, amasentimitha angu-6
Ukuqondiswa kwe-Si Substrate	<111>, <100>, ngokwezifiso
Ukumelana nokucindezeleka	Ukumelana okuphezulu, Ukuvikela okuncane, Ukumelana okuphansi
Uhlobo Lokusebenzisa Izidakamizwa	Uhlobo lwe-N, uhlobo lwe-P
Ubukhulu Besendlalelo se-GaN	100 nm – 5000 nm (kungenziwa ngezifiso)
Isendlalelo Sesithiyo se-AlGaN	24% – 28% Al (ejwayelekile 10-20 nm)
I-Voltage Yokuqhekeka	600V – 1200V
Ukuhamba Kwe-Electron	2000 cm²/V·s
Imvamisa Yokushintsha	Kufika ku-18 GHz
Ubulukhuni Bomphezulu We-Wafer	I-RMS ~0.25 nm (AFM)
Ukumelana Neshidi Le-GaN	437.9 Ω·cm²
I-Wafer Warp Ephelele	< 25 µm (ubuningi)
Ukuqhuba Okushisayo	1.3 – 2.1 W/cm·K

Izicelo

Amandla kagesi: I-GaN-on-Si ilungele ama-electronics kagesi afana nama-amplifiers kagesi, ama-converter, nama-inverter asetshenziswa ezinhlelweni zamandla avuselelekayo, ezimotweni zikagesi (ama-EV), kanye nemishini yezimboni. I-voltage yayo ephezulu yokuqhekeka kanye nokumelana okuphansi kuqinisekisa ukuguqulwa kwamandla okuphumelelayo, ngisho nasezisetshenzisweni zamandla aphezulu.

Ukuxhumana kwe-RF kanye ne-Microwave: Ama-wafer e-GaN-on-Si anikeza amakhono emvamisa ephezulu, okwenza afaneleke kakhulu kuma-amplifiers wamandla e-RF, ukuxhumana kwesathelayithi, izinhlelo ze-radar, kanye nobuchwepheshe be-5G. Anejubane eliphezulu lokushintsha kanye nekhono lokusebenza kumazamisa aphezulu (kufika ku-18 GHz), amadivayisi e-GaN anikeza ukusebenza okuphezulu kulezi zinhlelo zokusebenza.

Izimoto zikagesiI-GaN-on-Si isetshenziswa ezinhlelweni zamandla ezimoto, okuhlanganisaamashaja asebhodini (ama-OBC)futhiAbaguquli be-DC-DCIkhono layo lokusebenza emazingeni okushisa aphezulu nokumelana namazinga aphezulu kagesi lenza ifaneleke kahle ezimotweni zikagesi ezidinga ukuguqulwa kwamandla okuqinile.

I-LED kanye ne-Optoelectronics: I-GaN iyinto ekhethwayo ama-LED aluhlaza okwesibhakabhaka namhlopheAma-wafer e-GaN-on-Si asetshenziselwa ukukhiqiza izinhlelo zokukhanyisa ze-LED ezisebenza kahle kakhulu, ezihlinzeka ngokusebenza okuhle kakhulu ekukhanyiseni, ubuchwepheshe bokubonisa, kanye nokuxhumana kwe-optical.

Imibuzo Nezimpendulo

Umbuzo 1: Iyini inzuzo ye-GaN kune-silicon kumadivayisi kagesi?

A1:I-GaN ineigebe elibanzi (3.4 eV)kune-silicon (1.1 eV), evumela ukuthi imelane nama-voltage aphezulu kanye namazinga okushisa. Lesi sici senza i-GaN ikwazi ukuphatha izinhlelo zokusebenza zamandla aphezulu ngempumelelo, inciphise ukulahleka kwamandla futhi ikhulise ukusebenza kwesistimu. I-GaN iphinde inikeze isivinini sokushintsha esisheshayo, esibalulekile kumadivayisi anemvamisa ephezulu njengama-RF amplifiers kanye nama-power converter.

Umbuzo 2: Ngingakwazi yini ukwenza ngokwezifiso ukuqondiswa kwe-substrate ye-Si ukuze kusetshenziswe uhlelo lwami lokusebenza?

A2:Yebo, sinikezaukuqondiswa kwe-substrate ye-Si ngokwezifisonjenge<111>, <100>, kanye nezinye izindlela zokuqondiswa kuye ngezidingo zedivayisi yakho. Indlela yokuqondiswa kwe-substrate ye-Si idlala indima ebalulekile ekusebenzeni kwedivayisi, okuhlanganisa izici zikagesi, ukuziphatha kokushisa, kanye nokuzinza komshini.

Umbuzo 3: Yiziphi izinzuzo zokusebenzisa ama-wafer e-GaN-on-Si ekusetshenzisweni kwemvamisa ephezulu?

A3:Ama-wafer e-GaN-on-Si anikeza okungcono kakhuluisivinini sokushintsha, okwenza kube lula ukusebenza ngokushesha kumaza aphezulu uma kuqhathaniswa ne-silicon. Lokhu kuzenza zilungele ukusetshenziswaRFfuthii-microwaveizinhlelo zokusebenza, kanye nemvamisa ephezuluamadivayisi kagesinjengeAma-HEMT(Ama-Transistors Okuhamba Nge-Electron Ephezulu) kanyeAma-amplifier e-RFUkuhamba okuphezulu kwama-electron kwe-GaN nakho kuholela ekulahlekelweni okuphansi kokushintsha kanye nokusebenza kahle okuthuthukisiwe.

Umbuzo 4: Yiziphi izinketho zokusebenzisa izidakamizwa ezitholakalayo kuma-wafer e-GaN-on-Si?

A4:Sinikeza kokubiliUhlobo lwe-NfuthiUhlobo lwe-Pizinketho zokusebenzisa izidakamizwa, ezivame ukusetshenziswa ezinhlotsheni ezahlukene zamadivayisi e-semiconductor.Ukuphuza utshwala ngohlobo lwe-Nilungele kakhuluama-transistors kagesifuthiAma-amplifier e-RF, ngenkathiUkuphuza utshwala ngohlobo lwe-Pivame ukusetshenziselwa amadivayisi e-optoelectronic afana nama-LED.

Isiphetho

Ama-Wafer ethu e-Gallium Nitride ku-Silicon (GaN-on-Si) Aklanyelwe Umshini ahlinzeka ngesisombululo esifanele sezinhlelo zokusebenza ezivame kakhulu, ezinamandla aphezulu, kanye nezimo zokushisa eziphezulu. Ngokusebenzisa izindlela ze-substrate ze-Si ezingenziwa ngokwezifiso, ukumelana nokushisa, kanye ne-doping yohlobo lwe-N/P, lawa ma-wafer enzelwe ukuhlangabezana nezidingo ezithile zezimboni ezisukela ku-elekthronikhi yamandla kanye nezinhlelo zezimoto kuya kokuxhumana kwe-RF kanye nobuchwepheshe be-LED. Zisebenzisa izakhiwo eziphakeme ze-GaN kanye nokukhula kwe-silicon, lawa ma-wafer anikeza ukusebenza okuthuthukisiwe, ukusebenza kahle, kanye nokuvikela ikusasa kumadivayisi esizukulwane esilandelayo.