Umshini wesikwele wesiteshi esiphindwe kabili wokucubungula induku ye-silicon e-monocrystalline engu-6/8/12 intshi ububanzi be-Ra≤0.5μm

Umshini wesikwele wesiteshi esiphindwe kabili wokucubungula induku ye-silicon e-monocrystalline engu-6/8/12 intshi ububanzi bomphezulu Ra≤0.5μm Isithombe Esifakiwe

Incazelo emfushane:

Umshini wesikwele we-silicon one-monocrystalline uyithuluzi eliphumelelayo lokucubungula izinduku ze-silicon ezine-monocrystalline (i-Ingot). Wamukela umklamo wokusebenza ohambisanayo wesiteshi esiphindwe kabili futhi ungasika izinduku ze-silicon ezimbili ngesikhathi esisodwa, okuthuthukisa kakhulu ukusebenza kahle kokukhiqiza. Idivayisi icubungula izinduku ze-silicon ezine-cylindrical zibe amabhlogo e-silicon ayizikwele/ayisikwele (i-Grit) ngokusebenzisa ubuchwepheshe bokusika ucingo lwedayimane noma ama-blade e-saw angaphakathi ayindilinga, ilungiselela ukusika okulandelayo (njengokwenza ama-wafer e-silicon), futhi isetshenziswa kabanzi ekuxhumaneni kwezinto ze-silicon ezimbonini ze-photovoltaic kanye neze-semiconductor.

Sithumelele i-imeyili

Izici

Izici zemishini:

(1) Ukucubungula okuhambisanayo kwesiteshi esiphindwe kabili
· Ukusebenza kahle kabili: Ukucubungula ngasikhathi sinye kwezinduku ezimbili ze-silicon (Ø6"-12") kwandisa umkhiqizo ngo-40%-60% uma kuqhathaniswa nemishini ye-Simplex.

· Ukulawula okuzimele: Isiteshi ngasinye singalungisa ngokuzimela amapharamitha okusika (ukucindezeleka, isivinini sokudla) ukuze sivumelane nezincazelo ezahlukene zenduku ye-silicon.

(2) Ukusika okunembe kakhulu
· Ukunemba kobukhulu: ukubekezelela ibanga eliseceleni lebha yesikwele ± 0.15mm, ububanzi ≤0.20mm.

· Ikhwalithi yomphezulu: ukuphuka konqenqema olusezingeni eliphezulu <0.5mm, kunciphisa inani lokugaya okulandelayo.

(3) Ukulawula okuhlakaniphile
· Ukusika okuzivumelanisa nezimo: ukuqapha ngesikhathi sangempela isimo senduku ye-silicon, ukulungiswa okunamandla kwendlela yokusika (njengokucubungula induku ye-silicon egobile).

· Ukulandelelwa kwedatha: qopha amapharamitha okucubungula enduku ngayinye ye-silicon ukuze usekele ukufakwa kwesistimu ye-MES.

(4) Izindleko eziphansi ezisebenzisekayo
· Ukusetshenziswa kwentambo yedayimane: ≤0.06m/mm (ubude benduku ye-silicon), ububanzi bentambo ≤0.30mm.

· Ukujikeleziswa kwe-coolant: Uhlelo lokuhlunga lwandisa isikhathi senkonzo futhi lunciphisa ukulahlwa koketshezi olungcolile.

Izinzuzo zobuchwepheshe kanye nentuthuko:

(1) Ukusika ukuthuthukiswa kobuchwepheshe
- Ukusika ngemigqa eminingi: Imigqa yedayimane engu-100-200 isetshenziswa ngokuhambisana, futhi isivinini sokusika singu-≥40mm/min.

- Ukulawula ukucindezeleka: Uhlelo lokulungisa iluphu evaliwe (±1N) ukunciphisa ingozi yokuphuka kwentambo.

(2) Isandiso sokuhambisana
- Ukuzivumelanisa nezinto: Sekela i-silicon ye-monocrystalline yohlobo lwe-P/N, ehambisana ne-TOPCon, i-HJT nezinye izinduku ze-silicon zebhethri ezisebenza kahle kakhulu.

- Usayizi oguquguqukayo: ubude benduku ye-silicon 100-950mm, ibanga eliyisikwele eceleni kwenduku liyi-166-233mm elilungisekayo.

(3) Ukuthuthukiswa kokuzenzakalela
- Ukulayisha nokukhipha i-robot: ukulayisha/ukukhipha i-silicon rods ngokuzenzakalelayo, shaya imizuzu engu-≤3.

- Ukuxilongwa okuhlakaniphile: Ukulungiswa okubikezelayo ukuze kuncishiswe isikhathi sokungasebenzi esingahleliwe.

(4) Ubuholi bemboni
- Ukusekelwa kwe-Wafer: ingacubungula i-silicon engu-≥100μm enomzimba omncane kakhulu ngezinduku zesikwele, izinga lokuqhekeka <0.5%.

- Ukuthuthukiswa kokusetshenziswa kwamandla: Ukusetshenziswa kwamandla ngeyunithi ngayinye yenduku ye-silicon kuncishiswe ngo-30% (uma kuqhathaniswa nemishini yendabuko).

Amapharamitha obuchwepheshe:

Igama lepharamitha	Inani lenkomba
Inani lamabha acutshunguliwe	Izingcezu ezi-2/isethi
Ububanzi bobude bebha yokucubungula	100~950mm
Ububanzi bemajini	166 ~ 233mm
Isivinini sokusika	≥40mm/min
Isivinini sentambo yedayimane	0~35m/s
Ububanzi bedayimane	0.30 mm noma ngaphansi
Ukusetshenziswa komugqa	0.06 m/mm noma ngaphansi
Ububanzi benduku eyindilinga obuhambisanayo	Ububanzi benduku yesikwele obuqediwe +2mm, Qinisekisa izinga lokuphasa lokupholisha
Ukulawula ukuphuka okuphambili	Umphetho ongahluziwe ≤0.5mm, Akukho ukuqhekeka, ikhwalithi ephezulu yobuso
Ukufana kobude be-arc	Ibanga lokuphrojektha <1.5mm, Ngaphandle kokuphambuka kwenduku ye-silicon
Ubukhulu bomshini (umshini owodwa)	4800×3020×3660mm
Amandla aphelele alinganisiwe	56kW
Isisindo esingapheli semishini	12t

Ithebula lenkomba yokunemba kwemishini:

Into enembile	Ububanzi bokubekezelelana
Ukubekezelelana komkhawulo webha yesikwele	± 0.15mm
Ububanzi bomphetho webha yesikwele	≤0.20mm
I-engela kuzo zonke izinhlangothi zenduku yesikwele	90°±0.05°
Ukuthamba kwenduku yesikwele	≤0.15mm
Ukunemba kokubekwa okuphindaphindiwe kwerobhothi	± 0.05mm

Izinsizakalo ze-XKH:

I-XKH inikeza izinsizakalo zomjikelezo ogcwele zemishini ye-silicon yesiteshi esiphindwe kabili ye-mono-crystalline, okuhlanganisa ukwenza ngezifiso imishini (ehambisana nezinduku ezinkulu ze-silicon), ukugunyazwa kwenqubo (ukusika amapharamitha okwenziwa ngcono), ukuqeqeshwa kokusebenza kanye nokusekelwa kwangemva kokuthengisa (ukunikezwa kwezingxenye ezibalulekile, ukuxilongwa okukude), ukuqinisekisa ukuthi amakhasimende athola inzuzo ephezulu (>99%) kanye nokukhiqizwa kwezindleko eziphansi ezingasetshenziswa, kanye nokuhlinzeka ngezithuthukisi zobuchwepheshe (njengokwenza ngcono ukusika i-AI). Isikhathi sokulethwa siyizinyanga ezi-2-4.