Indlela ye-CVD yokukhiqiza izinto zokusetshenziswa ze-SiC ezihlanzekile kakhulu esithandweni sokwenziwa kwe-silicon carbide ku-1600℃

Incazelo emfushane:

Isithando sokwenziwa kwe-Silicon carbide (SiC) (CVD). Sisebenzisa ubuchwepheshe be-Chemical Vapor Deposition (CVD) emithonjeni ye-₄ ye-silicon egesi (isb. i-SiH₄, i-SiCl₄) endaweni yokushisa ephezulu lapho zisabela khona emithonjeni ye-carbon (isb. i-C₃H₈, i-CH₄). Idivayisi eyinhloko yokutshala amakristalu e-silicon carbide ahlanzekile kakhulu ku-substrate (i-graphite noma imbewu ye-SiC). Ubuchwepheshe busetshenziswa kakhulu ekulungiseleleni i-substrate ye-SiC eyodwa yekristalu (4H/6H-SiC), okuyimishini yenqubo eyinhloko yokukhiqiza ama-semiconductors wamandla (njenge-MOSFET, i-SBD).

Sithumelele i-imeyili

Izici

Isimiso sokusebenza:

1. Ukunikezwa kwe-precursor. Amagesi omthombo we-silicon (isb. i-SiH₄) kanye nomthombo we-carbon (isb. i-C₃H₈) axutshwa ngokulingana futhi afakwe ekamelweni lokusabela.

2. Ukubola kwezinga lokushisa eliphezulu: Ekushiseni okuphezulu okungu-1500 ~ 2300℃, ukubola kwegesi kukhiqiza ama-athomu asebenzayo e-Si kanye ne-C.

3. Ukusabela kobuso: Ama-athomu e-Si ne-C abekwa ebusweni be-substrate ukuze akhe ungqimba lwekristalu le-SiC.

4. Ukukhula kwekristalu: Ngokulawula i-gradient yokushisa, ukugeleza kwegesi kanye nengcindezi, ukuze kufezwe ukukhula okuqondile eceleni kwe-c axis noma i-a axis.

Amapharamitha ayisihluthulelo:

· Izinga lokushisa: 1600~2200℃ (>2000℃ ye-4H-SiC)

· Ingcindezi: 50~200mbar (ingcindezi ephansi yokunciphisa i-nucleation yegesi)

· Isilinganiso segesi: Si/C≈1.0~1.2 (ukugwema amaphutha okucebisa i-Si noma i-C)

Izici eziyinhloko:

(1) Ikhwalithi yekristalu
Ubuningi obuphansi besici: ubuningi be-microtubule < 0.5cm ⁻², ubuningi be-dislocation < 10⁴ cm⁻².

Ukulawulwa kohlobo lwe-Polycrystalline: kungakhula i-4H-SiC (ejwayelekile), i-6H-SiC, i-3C-SiC kanye nezinye izinhlobo zekristalu.

(2) Ukusebenza kwemishini
Ukuqina kokushisa okuphezulu: ukushisa kokungeniswa kwe-graphite noma ukushisa kokumelana, izinga lokushisa >2300℃.

Ukulawula ukufana: ukushintshashintsha kwezinga lokushisa ±5℃, izinga lokukhula 10~50μm/h.

Uhlelo lwegesi: I-flowmeter yesisindo esinembile kakhulu (i-MFC), ubumsulwa begesi ≥99.999%.

(3) Izinzuzo zobuchwepheshe
Ubumsulwa obuphezulu: Ubuningi bokungcola kwangemuva <10¹⁶ cm⁻³ (N, B, njll.).

Usayizi omkhulu: Sekela ukukhula kwe-substrate ye-SiC engu-6 "/8".

(4) Ukusetshenziswa kwamandla kanye nezindleko
Ukusetshenziswa kwamandla aphezulu (200~500kW·h ngesithando somlilo ngasinye), okubalwa u-30%~50% wezindleko zokukhiqiza ze-substrate ye-SiC.

Izinhlelo zokusebenza eziyinhloko:

1. I-substrate ye-Power semiconductor: Ama-SiC MOSFET okukhiqiza izimoto zikagesi kanye nama-inverter e-photovoltaic.

2. Idivayisi ye-Rf: Isiteshi sesisekelo se-5G i-GaN-on-SiC epitaxial substrate.

3. Amadivayisi emvelo asezingeni eliphezulu: izinzwa zokushisa okuphezulu zezindiza kanye nezitshalo zamandla enuzi.

Imininingwane yobuchwepheshe:

Imininingwane	Imininingwane
Ubukhulu (L × W × H)	4000 x 3400 x 4300 mm noma wenze ngezifiso
Ububanzi begumbi lesithando	1100mm
Umthamo wokulayisha	50kg
Izinga lomkhawulo we-vacuum	10-2Pa (amahora ama-2 ngemuva kokuqala kwepompo yama-molecule)
Izinga lokunyuka kwengcindezi yegumbi	≤10Pa/h (ngemuva kokuncishiswa kwe-calcium)
I-stroke yokuphakamisa ikhava yesithando esingezansi	1500mm
Indlela yokushisa	Ukushisa kwe-induction
Izinga lokushisa eliphezulu kakhulu esithandweni somlilo	2400°C
Ukunikezwa kwamandla okushisa	2X40kW
Ukulinganisa izinga lokushisa	Ukulinganisa izinga lokushisa le-infrared elinemibala emibili
Ibanga lokushisa	900~3000℃
Ukunemba kokulawula izinga lokushisa	±1°C
Ububanzi bokucindezela kokulawula	1 ~ 700mbar
Ukunemba Kokulawula Ingcindezi	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Indlela yokulayisha	Ukulayisha okuphansi;
Ukucushwa okungakhethwa	Indawo yokulinganisa izinga lokushisa kabili, ukulayisha i-forklift.

Izinsizakalo ze-XKH:

I-XKH inikeza izinsizakalo zomjikelezo ogcwele zama-silicon carbide CVD furnaces, okuhlanganisa ukwenza ngezifiso imishini (ukwakheka kwendawo yokushisa, ukucushwa kwesistimu yegesi), ukuthuthukiswa kwenqubo (ukulawulwa kwekristalu, ukwenza ngcono amaphutha), ukuqeqeshwa kobuchwepheshe (ukusebenza nokugcinwa) kanye nokusekelwa kwangemva kokuthengisa (ukunikezwa kwezingxenye ezisele zezingxenye ezibalulekile, ukuxilongwa okukude) ukusiza amakhasimende ukufeza ukukhiqizwa kwe-SiC substrate esezingeni eliphezulu. Futhi inikeze izinsizakalo zokuthuthukisa inqubo ukuze ithuthukise njalo isivuno sekristalu kanye nokusebenza kahle kokukhula.