I-LN-on-Si Composite Substrate engu-6 intshi-8 intshi Ubukhulu be-0.3-50 μm Izinto ze-Si/SiC/Sapphire

I-LN-on-Si Composite Substrate engu-6 intshi-8 intshi Ubukhulu be-Substrate engu-0.3-50 μm Si/SiC/Sapphire Yezinto Ezifakiwe Isithombe Esivelele

Incazelo emfushane:

I-substrate ye-LN-on-Si engu-6 intshi kuya ku-8 intshi iyinto esebenza kahle kakhulu ehlanganisa amafilimu amancane e-single-crystal lithium niobate (LN) nama-substrate e-silicon (Si), anobukhulu obusukela ku-0.3 μm kuya ku-50 μm. Yenzelwe ukwenziwa kwe-semiconductor ethuthukisiwe kanye ne-optoelectronic device. Isebenzisa amasu okukhulisa ama-bonding athuthukisiwe noma epitaxial, le substrate iqinisekisa ikhwalithi ephezulu ye-crystalline yefilimu encane ye-LN ngenkathi isebenzisa usayizi omkhulu we-wafer (6 intshi kuya ku-8 intshi) we-substrate ye-silicon ukuthuthukisa ukusebenza kahle kokukhiqiza kanye nokusebenza kahle kwezindleko.
Uma kuqhathaniswa nezinto ezivamile ze-LN ezinkulu, i-substrate ye-LN-on-Si engu-6 intshi kuya ku-8 intshi ehlanganisiwe inikeza ukufaniswa kokushisa okuphezulu kanye nokuqina komshini, okwenza ifaneleke ekucutshungulweni kwezinga elikhulu le-wafer. Ngaphezu kwalokho, ezinye izinto eziyisisekelo ezifana ne-SiC noma i-sapphire zingakhethwa ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza, kufaka phakathi amadivayisi e-RF avame kakhulu, ama-photonics ahlanganisiwe, kanye nezinzwa ze-MEMS.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

0.3-50μm LN/LT kuma-Insulators
Isendlalelo esiphezulu
Ububanzi	Amasentimitha angu-6-8
Ukuqondiswa	X, Z, Y-42 njll.
Izinto zokwakha	LT, LN
Ubukhulu	0.3-50μm
I-substrate (Eyenziwe ngokwezifiso)
Izinto	I-Si, i-SiC, i-Sapphire, i-Spinel, i-Quartz

Izici Eziyinhloko

I-substrate ye-LN-on-Si ehlanganisiwe engamasentimitha angu-6 kuya kwangu-8 ihlukaniswa yizakhiwo zayo ezihlukile zezinto kanye namapharamitha angashintshwa, okwenza kube lula ukusebenzisa embonini ye-semiconductor kanye ne-optoelectronic:

1. Ukuhambisana kwe-Wafer Enkulu: Usayizi we-wafer ongamasentimitha angu-6 kuya kwangu-8 uqinisekisa ukuhlanganiswa okungenamthungo nemigqa yokukhiqiza ye-semiconductor ekhona (isb., izinqubo ze-CMOS), kunciphisa izindleko zokukhiqiza futhi kuvumela ukukhiqizwa ngobuningi.

2. Ikhwalithi Ephakeme Yekristalu: Amasu e-epitaxial noma ama-bonding alungiselelwe aqinisekisa ubuningi obuphansi besici kufilimu encane ye-LN, okwenza kube kuhle kakhulu kuma-modulators e-optical asebenza kahle kakhulu, izihlungi ze-surface acoustic wave (SAW), kanye namanye amadivayisi okunemba.

3. Ubukhulu Obulungisekayo (0.3–50 μm): Izendlalelo ze-LN ezincane kakhulu (<1 μm) zifanelekela ama-photonic chips ahlanganisiwe, kuyilapho izendlalelo ezibanzi (10–50 μm) zisekela amadivayisi e-RF anamandla aphezulu noma izinzwa ze-piezoelectric.

4. Izinketho Eziningi Ze-Substrate: Ngaphezu kwe-Si, i-SiC (ukushisa okuphezulu) noma i-sapphire (ukushisa okuphezulu) ingakhethwa njengezinto eziyisisekelo ukuhlangabezana nezidingo zezinhlelo zokusebenza ezivame kakhulu, ezishisa kakhulu, noma ezinamandla aphezulu.

5. Ukuzinza Kokushisa Nokwemishini: I-substrate ye-silicon inikeza ukwesekwa okuqinile kwemishini, inciphisa ukugoba noma ukuqhekeka ngesikhathi sokucubungula nokuthuthukisa umkhiqizo wedivayisi.

Lezi zimfanelo zibeka i-substrate ye-LN-on-Si engu-6-intshi kuya ku-8-intshi njengento ekhethwayo yobuchwepheshe obusezingeni eliphezulu njengokuxhumana kwe-5G, i-LiDAR, kanye ne-quantum optics.

Izinhlelo Eziyinhloko

I-substrate ye-LN-on-Si ehlanganisiwe engamasentimitha angu-6 kuya kwangu-8 isetshenziswa kabanzi ezimbonini zobuchwepheshe obuphezulu ngenxa yezakhiwo zayo ezivelele ze-electro-optic, i-piezoelectric, kanye ne-acoustic:

1. Ukuxhumana Okubonakalayo kanye ne-Photonics Ehlanganisiwe: Ivumela ama-modulators e-electro-optic asheshayo, ama-waveguides, kanye nama-photonic integrated circuits (ama-PIC), abhekana nezidingo ze-bandwidth zezikhungo zedatha kanye namanethiwekhi e-fiber-optic.

Amadivayisi e-RF angu-2.5G/6G: I-coefficient ephezulu ye-piezoelectric ye-LN yenza kube kuhle kakhulu kuma-surface acoustic wave (SAW) kanye nama-bulk acoustic wave (BAW), okuthuthukisa ukucutshungulwa kwesignali eziteshini zesisekelo ze-5G kanye namadivayisi eselula.

3. I-MEMS kanye Nezinzwa: Umphumela we-piezoelectric we-LN-on-Si usiza ama-accelerometers azwela kakhulu, ama-biosensors, kanye nama-transducer e-ultrasonic ukuze kusetshenziswe ezokwelapha nasezimbonini.

4. Ubuchwepheshe be-Quantum: Njengezinto ezibonakalayo ezingezona eziqondile, amafilimu amancane e-LN asetshenziswa emithonjeni yokukhanya kwe-quantum (isb., ama-photon pairs ahlanganisiwe) kanye nama-quantum chips ahlanganisiwe.

5. Ama-Laser kanye nama-Nonlinear Optics: Izingqimba ze-LN ezincane kakhulu zivumela amadivayisi asebenzayo okukhiqiza i-second-harmonic (SHG) kanye ne-optical parametric oscillation (OPO) ukuze kucutshungulwe i-laser kanye nokuhlaziywa kwe-spectroscopic.

I-substrate ejwayelekile ye-LN-on-Si engu-6-intshi kuya ku-8-intshi ivumela la madivayisi ukuthi akhiqizwe nge-wafer fabs enkulu, okunciphisa kakhulu izindleko zokukhiqiza.

Ukwenza Ngokwezifiso kanye Nezinsizakalo

Sinikeza ukwesekwa kobuchwepheshe okuphelele kanye nezinsizakalo zokwenza ngokwezifiso ze-substrate ye-LN-on-Si engu-6-intshi kuya ku-8-intshi ukuze kuhlangatshezwane nezidingo ezahlukene ze-R&D kanye nokukhiqiza:

1. Ukwenziwa Ngokwezifiso: Ubukhulu befilimu ye-LN (0.3–50 μm), ukuma kwekristalu (X-cut/Y-cut), kanye nezinto ze-substrate (Si/SiC/sapphire) kungenziwa ngendlela efanele ukuze kuthuthukiswe ukusebenza kwedivayisi.

2. Ukucutshungulwa Kwezinga Le-Wafer: Ukuhlinzekwa ngobuningi kwama-wafer angu-6 intshi no-8 intshi, okuhlanganisa nezinsizakalo zasemuva njengokusika, ukupholisha, kanye nokumboza, ukuqinisekisa ukuthi ama-substrate alungele ukuhlanganiswa kwedivayisi.

3. Ukubonisana Nokuhlola Ngobuchwepheshe: Ukuhlukaniswa kwezinto (isib. i-XRD, i-AFM), ukuhlolwa kokusebenza kwe-electro-optic, kanye nokusekelwa kokulingisa idivayisi ukuze kusheshiswe ukuqinisekiswa komklamo.

Umgomo wethu ukusungula i-substrate ye-LN-on-Si ehlanganisiwe engamasentimitha angu-6 kuya kwangu-8 njengesixazululo sezinto eziyinhloko zezinhlelo zokusebenza ze-optoelectronic kanye ne-semiconductor, enikeza ukwesekwa kusukela ekuqaleni kuya ekugcineni kusukela ku-R&D kuya ekukhiqizweni okukhulu.

Isiphetho

I-substrate ye-LN-on-Si engu-6-intshi kuya ku-8-intshi, enobukhulu bayo obukhulu be-wafer, ikhwalithi ephezulu yezinto ezibonakalayo, kanye nokuguquguquka, iqhubekisela phambili intuthuko kwezokuxhumana kwe-optical, i-5G RF, kanye nobuchwepheshe be-quantum. Kungakhathaliseki ukuthi kukhiqizwa ngobuningi obukhulu noma izixazululo ezenziwe ngokwezifiso, sinikeza ama-substrate athembekile kanye nezinsizakalo ezihambisanayo ukuze kunikezwe amandla okusha kwezobuchwepheshe.