Ama-Wafer e-Epitaxial angu-4H-SiC ama-MOSFET e-Ultra-High Voltage (100–500 μm, amasentimitha angu-6)

Ama-Wafer e-Epitaxial Wafer angu-4H-SiC ama-MOSFET e-Ultra-High Voltage (100–500 μm, 6 intshi) Isithombe Esifakiwe

Incazelo emfushane:

Ukukhula okusheshayo kwezimoto zikagesi, amagridi ahlakaniphile, izinhlelo zamandla avuselelekayo, kanye nemishini yezimboni enamandla amakhulu kudale isidingo esiphuthumayo samadivayisi e-semiconductor akwazi ukuphatha ama-voltage aphezulu, ubuningi bamandla aphezulu, kanye nokusebenza kahle okukhulu. Phakathi kwama-semiconductors e-wide bandgap,i-silicon carbide (i-SiC)ivelele ngegebe layo elibanzi, ukuhanjiswa okuphezulu kokushisa, kanye namandla amakhulu ensimu kagesi abalulekile.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubuka Konke Komkhiqizo

OkwethuAma-wafer epitaxial angu-4H-SiCzenzelwe ngqoizinhlelo zokusebenza ze-MOSFET ze-voltage ephezulu kakhulu. Ngezendlalelo ze-epitaxial ezisukela ku-100 μm kuya ku-500 μm on Izingxenye ezingaphansi komhlaba ezingamasentimitha angu-6 (150 mm), lawa ma-wafer aletha izindawo zokukhukhuleka ezinde ezidingekayo kumadivayisi ekilasi le-kV ngenkathi egcina ikhwalithi yekristalu evelele kanye nokusabalala. Ubukhulu obujwayelekile buhlanganisa i-100 μm, i-200 μm, kanye ne-300 μm, kanye nokwenza ngokwezifiso okutholakalayo.

Ubukhulu Besendlalelo se-Epitaxial

Ingqimba ye-epitaxial idlala indima ebalulekile ekunqumeni ukusebenza kwe-MOSFET, ikakhulukazi ibhalansi phakathi kwe-MOSFET ne-MOSFET.i-voltage yokuqhekekafuthiukumelana.

100–200 μm: Yenzelwe ama-MOSFET e-voltage aphakathi kuya kwaphezulu, inikeza ibhalansi enhle kakhulu yokusebenza kahle kokuhambisa kanye namandla okuvimba.
200–500 μm: Kufanelekela amadivayisi ane-voltage ephezulu kakhulu (10 kV+), okuvumela izindawo ezinde zokukhukhuleka ukuze kube nezici zokuphazamiseka okuqinile.

Kuyo yonke indawo,ukufana kobukhulu kulawulwa ngaphakathi kwe-±2%, ukuqinisekisa ukuvumelana kusukela ku-wafer kuya ku-wafer kanye ne-batch kuya ku-batch. Lokhu kuguquguquka kuvumela abaklami ukuthi balungise ukusebenza kwedivayisi kwezigaba zabo ze-voltage ngenkathi begcina ukuphindaphindeka ekukhiqizweni okukhulu.

Inqubo Yokukhiqiza

Ama-wafer ethu enziwa kusetshenziswai-CVD (Chemical Vapor Deposition) yesimanje, okuvumela ukulawulwa okunembile kokujiya, ukusebenzisa izidakamizwa, kanye nekhwalithi yekristalu, ngisho nasezingqimbeni ezijiyile kakhulu.

I-CVD Epitaxy– Amagesi ahlanzekile kakhulu kanye nezimo ezilungiselelwe kahle kuqinisekisa izindawo ezibushelelezi kanye nobuningi obuncane bokukhubazeka.
Ukukhula Kwezingqimba Ezijiyile- Izindlela zokupheka zenqubo yobunikazi zivumela ukujiya kwe-epitaxial kufikela ku-500 μmngokufana okuhle kakhulu.
Ukulawulwa Kokusebenzisa Izidakamizwa- Ukuhlushwa okulungisekayo phakathi1×10¹⁴ – 1×10¹⁶ cm⁻³, ngokufana okungcono kuno-±5%.
Ukulungiselela Okungaphezulu- Ama-wafer adlulaUkupholisha kwe-CMPkanye nokuhlolwa okuqinile, okuqinisekisa ukuhambisana nezinqubo ezithuthukisiwe ezifana ne-gate oxidation, i-photolithography, kanye ne-metallization.

Izinzuzo Eziyinhloko

Amandla E-Ultra-High Voltage– Izendlalelo ezijiyile ze-epitaxial (100–500 μm) zisekela imiklamo ye-MOSFET yeklasi le-kV.
Ikhwalithi Eyingqayizivele Yekristalu– Ukungahlali kahle kanye nobuningi be-basal plane defect kuqinisekisa ukuthembeka futhi kunciphisa ukuvuza.
Izingxenyana Ezinkulu Eziyi-intshi Eziyi-6- Ukusekelwa kokukhiqizwa kwevolumu ephezulu, izindleko ezincishisiwe ngedivayisi ngayinye, kanye nokuhambisana okuhle kakhulu.
Izakhiwo Eziphakeme Zokushisa– Ukushisa okuphezulu kanye negebe elibanzi kwenza kube lula ukusebenza kahle emandleni aphezulu kanye nasekushiseni okuphezulu.
Amapharamitha Angenziwa Ngokwezifiso– Ukujiya, ukusebenzisa izidakamizwa, ukuqondiswa, kanye nokuphela kwendawo kungalungiswa ngokwezidingo ezithile.

Imininingwane Ejwayelekile

Ipharamitha	Imininingwane
Uhlobo Lokuqhuba	Uhlobo lwe-N (olufakwe i-nitrogen)
Ukumelana	Noma yikuphi
I-Angle Engaxhumekile Ku-Axis	4° ± 0.5° (kuya ku-[11-20])
Ukuqondiswa Kwekristalu	(0001) Ubuso obufanayo
Ubukhulu	200–300 μm (okungenziwa ngezifiso 100–500 μm)
Ukuqedwa Komphezulu	Ngaphambili: I-CMP ipholishiwe (ilungele i-epi) Ngemuva: ipholishiwe noma ipholishiwe
I-TTV	≤ 10 μm
Umnsalo/I-Warp	≤ 20 μm

Izindawo Zokufaka Isicelo

Ama-wafer epitaxial epitaxial angu-4H-SiC afaneleka kakhuluAma-MOSFET ezinhlelweni ze-voltage ephezulu kakhulu, kufaka phakathi:

Ama-inverter okudonsa izimoto zikagesi kanye namamojula okushaja ane-voltage ephezulu
Imishini yokudlulisa nokusabalalisa igridi ehlakaniphile
Ama-inverter amandla avuselelekayo (ilanga, umoya, indawo yokugcina)
Izinhlelo zokuthumela izimpahla zezimboni ezinamandla aphezulu kanye nokushintsha

Imibuzo Evame Ukubuzwa

Q1: Luhlobo luni lokuqhuba ugesi?
I-A1: Uhlobo lwe-N, olufakwe i-nitrogen — indinganiso yemboni yama-MOSFET namanye amadivayisi kagesi.

Umbuzo 2: Yikuphi ukujiya kwe-epitaxial okutholakalayo?
A2: 100–500 μm, enezinketho ezijwayelekile ku-100 μm, 200 μm, kanye no-300 μm. Ubukhulu obungokwezifiso buyatholakala uma uceliwe.

Q3: Iyini indlela yokuqondisa i-wafer kanye ne-angle ye-off-axis?
A3: (0001) I-Si-face, ene-4° ± 0.5° off-axis ebheke ohlangothini lwe-[11-20].

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.