4 intshi SiC Wafers 6H Semi-Insulating SiC Substrates prime, ucwaningo, kanye dummy grade

Incazelo emfushane:

I-Semi-insulated silicon carbide substrate yakhiwa ngokusika, ukugaya, ukupholisha, ukuhlanza nobunye ubuchwepheshe bokucubungula ngemva kokukhula kwekristalu ye-silicon carbide e-semi-insulated. Ungqimba noma ungqimba lwekristalu oluningi luyakhuliswa ku-substrate ehlangabezana nezimfuneko zekhwalithi njenge-epitaxy, bese idivayisi ye-microwave RF yenziwa ngokuhlanganisa umklamo wesekethe nokupakishwa. Itholakala njenge-2inch 3inch 4incgh 6inch 8 inch yezimboni, ucwaningo kanye nebanga lokuhlola i-semi-insulated silicon carbide single crystal substrates.

Thumela i-imeyili kithi

Izici

Ukucaciswa Komkhiqizo

Ibanga			Ibanga le-Zero MPD Production (Ibanga le-Z)			IBanga Lokukhiqiza Elijwayelekile(iBanga le-P)		I-Dummy Grade (D Grade)
Ububanzi			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
I-Wafer Orientation			Ku-axis evaliwe : 4.0° kuya ku-< 1120 > ±0.5° ku-4H-N, Ku-eksisi : <0001>±0.5° ku-4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Isisekelo se-Flat Orientation		{10-10} ±5.0°
Ubude Befulethi obuyisisekelo		32.5 mm±2.0 mm
Ubude Befulethi besibili		18.0 mm±2.0 mm
I-Flat Orientation yesibili		I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat ±5.0°
Ukukhishwa komkhawulo		3 mm
LTV/TTV/Bow/Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			C ubuso				IsiPolish		IRa≤1 nm
			Si ubuso	I-CMP	I-Ra≤0.2 nm					I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light		Lutho						Ubude obuqongelelwayo ≤ 10 mm, eyodwa ubude≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu		Indawo eqoqiwe ≤0.05%						Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu		Lutho						Indawo eqoqiwe≤3%
I-Visual Carbon Inclusions		Indawo eqoqiwe ≤0.05%						Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light		Lutho						Ubude obuqongelelwayo≤1＊ububanzi bewafa
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla		Akukho okuvunyelwe ≥0.2 mm ububanzi nokujula						5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity		Lutho
Ukupakisha		Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa