3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulating （HPSI）SiC wafer 350um Dummy grade grade Prime
Isicelo
Ama-wafer e-HPSI SiC abalulekile ekwenzeni amadivayisi kagesi esizukulwane esilandelayo asebenze, asetshenziswa ezinhlelweni ezahlukahlukene zokusebenza okuphezulu:
Izinhlelo Zokuguqula Amandla: Ama-wafer e-SiC asebenza njengezinto eziyinhloko zamadivayisi kagesi njenge-MOSFET yamandla, ama-diode, nama-IGBT, abalulekile ekuguqulweni kwamandla okuphumelelayo kumasekethe kagesi. Lezi zingxenye zitholakala ezimpahleni zamandla ezisebenza kahle kakhulu, kuma-motor drive, kanye nama-inverter ezimboni.
Izimoto Zikagesi (ama-EV):Isidingo esikhulayo sezimoto zikagesi senza kudingeke ukusetshenziswa kwe-elekthronikhi yamandla esebenza kahle kakhulu, futhi ama-wafer e-SiC ahamba phambili kulolu shintsho. Kuma-powertrain e-EV, lawa ma-wafer ahlinzeka ngokusebenza kahle kakhulu kanye namakhono okushintsha okusheshayo, okufaka isandla ezikhathini zokushaja okusheshayo, ibanga elide, kanye nokusebenza kahle kwezimoto eziphelele.
Amandla Avuselelekayo:Ezinhlelweni zamandla avuselelekayo njengamandla elanga nawomoya, ama-wafer e-SiC asetshenziswa kuma-inverter nama-converter avumela ukubanjwa nokusatshalaliswa kwamandla okusebenza kahle kakhulu. Ukushisa okuphezulu kanye ne-voltage ephezulu yokuqhekeka kwe-SiC kuqinisekisa ukuthi lezi zinhlelo zisebenza ngokuthembeka, ngisho nangaphansi kwezimo zemvelo ezimbi kakhulu.
Ukuzenzekela Kwezimboni kanye Namarobhothi:Ama-elekthronikhi anamandla asebenza kahle kakhulu ezinhlelweni zokuzenzakalela zezimboni kanye namarobhothi adinga amadivayisi akwazi ukushintsha ngokushesha, ukuphatha imithwalo emikhulu yamandla, nokusebenza ngaphansi kokucindezeleka okukhulu. Ama-semiconductor asekelwe ku-SiC ahlangabezana nalezi zidingo ngokunikeza ukusebenza kahle nokuqina okuphezulu, ngisho nasezindaweni zokusebenza ezinzima.
Izinhlelo Zokuxhumana:Kwingqalasizinda yezokuxhumana, lapho ukuthembeka okuphezulu kanye nokuguqulwa kwamandla okusebenzayo kubalulekile khona, ama-wafer e-SiC asetshenziswa ezimpahleni zikagesi kanye naseziguqulini ze-DC-DC. Amadivayisi e-SiC asiza ukunciphisa ukusetshenziswa kwamandla futhi athuthukise ukusebenza kwesistimu ezikhungweni zedatha kanye namanethiwekhi okuxhumana.
Ngokuhlinzeka ngesisekelo esiqinile sezinhlelo zokusebenza ezinamandla aphezulu, i-HPSI SiC wafer ivumela ukuthuthukiswa kwamadivayisi asebenzisa amandla ngendlela eyongayo, okusiza izimboni ukuthi zishintshele ezixazululweni eziluhlaza nezisimeme.
Izakhiwo
| umsebenzi | Ibanga Lokukhiqiza | Ibanga Locwaningo | Ibanga Eliyimbumbulu |
| Ububanzi | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm |
| Ubukhulu | 350 µm ± 25 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Ukuqondiswa kwe-Wafer | Ku-axis: <0001> ± 0.5° | Ku-axis: <0001> ± 2.0° | Ku-axis: <0001> ± 2.0° |
| Ubuningi be-Micropipe yama-95% ama-Wafers (MPD) | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Ukumelana Nogesi | ≥ 1E7 Ω·cm | ≥ 1E6 Ω·cm | ≥ 1E5 Ω·cm |
| I-Dopant | Kuhlehlisiwe | Kuhlehlisiwe | Kuhlehlisiwe |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | {11-20} ± 5.0° | {11-20} ± 5.0° | {11-20} ± 5.0° |
| Ubude Obuphansi Obuyinhloko | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm |
| Ubude Besibili Obuyisicaba | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ukuqondiswa Kwesibili Okuyisicaba | Uma ubheke phezulu: 90° CW kusukela efulethini eliyinhloko ± 5.0° | Uma ubheke phezulu: 90° CW kusukela efulethini eliyinhloko ± 5.0° | Uma ubheke phezulu: 90° CW kusukela efulethini eliyinhloko ± 5.0° |
| Ukukhishwa Komphetho | 3 mm | 3 mm | 3 mm |
| I-LTV/TTV/Umnsalo/I-Warp | 3 µm / 10 µm / ±30 µm / 40 µm | 3 µm / 10 µm / ±30 µm / 40 µm | 5 µm / 15 µm / ±40 µm / 45 µm |
| Ubulukhuni Bomphezulu | Ubuso be-C: Obucwebezelayo, ubuso be-Si: CMP | Ubuso be-C: Obucwebezelayo, ubuso be-Si: CMP | Ubuso be-C: Obucwebezelayo, ubuso be-Si: CMP |
| Imifantu (ihlolwa ngokukhanya okunamandla aphezulu) | Akukho | Akukho | Akukho |
| Amapuleti e-Hex (ahlolwa ngokukhanya okuphezulu) | Akukho | Akukho | Indawo ehlanganisiwe 10% |
| Izindawo ze-Polytype (zihlolwa ngokukhanya okuphezulu) | Indawo ehlanganisiwe 5% | Indawo ehlanganisiwe 5% | Indawo ehlanganisiwe 10% |
| Ukuklwebheka (kuhlolwe ngokukhanya okunamandla aphezulu) | ≤ imihuzuko emi-5, ubude obuhlanganisiwe ≤ 150 mm | ≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200 mm | ≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200 mm |
| Ukuqhekeka Komphetho | Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.5 mm | 2 kuvunyelwe, ububanzi nokujula okungu-≤ 1 mm | 5 kuvunyelwe, ububanzi nokujula okungu-≤ 5 mm |
| Ukungcoliswa Komphezulu (kuhlolwe ngokukhanya okunamandla aphezulu) | Akukho | Akukho | Akukho |
Izinzuzo Eziyinhloko
Ukusebenza Okuphezulu Kokushisa: Ukushisa okuphezulu kwe-SiC kuqinisekisa ukushabalaliswa kokushisa okuphumelelayo kumadivayisi kagesi, okuwavumela ukuthi asebenze emazingeni aphezulu amandla kanye namaza ngaphandle kokushisa ngokweqile. Lokhu kuholela ezinhlelweni ezincane, ezisebenza kahle kakhulu kanye nesikhathi eside sokusebenza.
I-High Breakdown Voltage: Njengoba ine-bandgap ebanzi uma iqhathaniswa ne-silicon, ama-SiC wafer asekela izinhlelo zokusebenza ze-high voltage, okwenza abe ngcono kakhulu ezingxenyeni zikagesi ezidinga ukumelana ne-high break voltage, njengasezimotweni zikagesi, izinhlelo zikagesi zegridi, kanye nezinhlelo zamandla avuselelekayo.
Ukulahlekelwa Amandla Okuncishisiwe: Ukumelana okuphansi kanye nesivinini sokushintsha okusheshayo kwamadivayisi e-SiC kuholela ekulahlekelweni kwamandla okuncishisiwe ngesikhathi sokusebenza. Lokhu akugcini nje ngokuthuthukisa ukusebenza kahle kodwa futhi kuthuthukisa ukonga amandla okuphelele kwezinhlelo lapho zisetshenziswa khona.
Ukwethenjelwa Okuthuthukisiwe Ezindaweni Ezinzima: Izakhiwo zezinto eziqinile ze-SiC ziyivumela ukuthi isebenze ezimweni ezimbi kakhulu, njengamazinga okushisa aphezulu (kufika ku-600°C), ama-voltage aphezulu, kanye nama-frequency aphezulu. Lokhu kwenza ama-wafer e-SiC afanelekele ukusetshenziswa kwezimboni, izimoto kanye namandla okufuna usizo.
Ukusebenza Kahle Kwamandla: Amadivayisi e-SiC anikeza amandla amaningi kunamadivayisi avamile asekelwe ku-silicon, okunciphisa usayizi nesisindo sezinhlelo zikagesi zamandla ngenkathi kuthuthukiswa ukusebenza kahle kwazo konke. Lokhu kuholela ekongeni izindleko kanye nokuncipha kwesimo semvelo ezisetshenziswayo njengamandla avuselelekayo nezimoto zikagesi.
Ukusabalala: Ububanzi obungu-3 intshi kanye nokubekezelelana okunembile kokukhiqiza kwe-HPSI SiC wafer kuqinisekisa ukuthi ingalinganiswa ukuze ikhiqizwe ngobuningi, ihlangabezane nezidingo zocwaningo kanye nokukhiqiza kwezentengiselwano.
Isiphetho
I-HPSI SiC wafer, enobubanzi bayo obungu-3 intshi kanye nobukhulu obungu-350 µm ± 25 µm, iyinto efanele kakhulu esizukulwaneni esilandelayo samadivayisi kagesi asebenza kahle kakhulu. Inhlanganisela yayo eyingqayizivele yokuqhuba ukushisa, i-voltage ephezulu yokuwohloka, ukulahlekelwa amandla aphansi, kanye nokuthembeka ngaphansi kwezimo ezimbi kakhulu kuyenza ibe yingxenye ebalulekile yezinhlelo zokusebenza ezahlukahlukene ekuguqulweni kwamandla, amandla avuselelekayo, izimoto zikagesi, izinhlelo zezimboni, kanye nokuxhumana ngocingo.
Le wafer ye-SiC ifaneleka kakhulu ezimbonini ezifuna ukufeza ukusebenza kahle okuphezulu, ukonga amandla okukhulu, kanye nokwethenjwa kwesistimu okuthuthukisiwe. Njengoba ubuchwepheshe be-elekthronikhi bamandla buqhubeka nokuthuthuka, i-wafer ye-HPSI SiC inikeza isisekelo sokuthuthukiswa kwezixazululo zesizukulwane esilandelayo, ezisebenzisa amandla kahle, okuholela ekushintsheleni ekusaseni elizinzile, elingenayo ikhabhoni eningi.
Umdwebo Oningiliziwe
