I-wafer ye-substrate engu-3 intshi engu-76.2mm engu-4H-Semi SiC I-Silicon Carbide Ama-wafer e-SiC ahlambalaza kancane

I-wafer ye-substrate engu-3 intshi engu-76.2mm engu-4H-Semi SiC Ama-wafer e-Silicon Carbide ahlambalaza kancane Isithombe Esifakiwe

Incazelo emfushane:

I-wafer ye-SiC ye-single crystal esezingeni eliphezulu (i-Silicon Carbide) esezingeni eliphezulu embonini ye-elekthronikhi kanye neye-optoelectronic. I-wafer ye-SiC engu-3inch iyizinto zesizukulwane esilandelayo ze-semiconductor, ama-wafer e-silicon-carbide angenawo ugesi anobubanzi obungu-3-intshi. Ama-wafer enzelwe ukwenziwa kwamadivayisi kagesi, i-RF kanye ne-optoelectronics.

Sithumelele i-imeyili

Izici

Ukucaciswa Komkhiqizo

Ama-wafer e-substrate angu-3-intshi angu-4H angama-semi-insulated SiC (silicon carbide) ayizinto ezisetshenziswa kakhulu ze-semiconductor. I-4H ikhombisa isakhiwo sekristalu se-tetrahexahedral. I-semi-insulation isho ukuthi i-substrate inezici zokumelana okuphezulu futhi ingahlukaniswa kancane nokugeleza kwamanje.

Ama-wafer anjalo e-substrate anezici ezilandelayo: ukuhanjiswa kokushisa okuphezulu, ukulahleka kokuhanjiswa okuphansi, ukumelana okuhle kakhulu nokushisa okuphezulu, kanye nokuqina okuhle kakhulu kwemishini namakhemikhali. Ngenxa yokuthi i-silicon carbide inegebe elikhulu lamandla futhi ingamelana namazinga okushisa aphezulu kanye nezimo zensimu kagesi ephezulu, ama-wafer e-4H-SiC asetshenziswa kabanzi kumadivayisi kagesi kagesi kanye ne-radio frequency (RF).

Ukusetshenziswa okuyinhloko kwama-wafers e-4H-SiC afakwe i-semi-insulation kufaka phakathi:

1--Ama-elekthronikhi anamandla: Ama-wafer e-4H-SiC angasetshenziswa ukukhiqiza amadivayisi okushintsha amandla njenge-MOSFET (Metal Oxide Semiconductor Field Effect Transistors), ama-IGBT (Insulated Gate Bipolar Transistors) kanye nama-diode e-Schottky. Lawa madivayisi anokulahlekelwa okuphansi kokuhambisa kanye nokushintsha kwamandla ezindaweni eziphezulu ze-voltage kanye nezinga lokushisa eliphezulu futhi anikeza ukusebenza kahle kanye nokuthembeka okuphezulu.

2--Amadivayisi E-Radio Frequency (RF): Ama-wafer e-4H-SiC angasetshenziswa ukwakha ama-amplifiers anamandla aphezulu, ama-RF power amplifiers anamandla aphezulu, ama-chip resistors, ama-filters, namanye amadivayisi. I-Silicon carbide isebenza kangcono kuma-frequency aphezulu kanye nokuzinza kokushisa ngenxa yesilinganiso sayo esikhulu sokugeleza kwama-electron saturation kanye nokuqhuba okuphezulu kokushisa.

3--Amadivayisi e-Optoelectronic: Ama-wafer e-4H-SiC angasetshenziswa ukukhiqiza ama-laser diode anamandla aphezulu, ama-UV light detectors kanye nama-optoelectronic integrated circuits.

Ngokuqondene nesiqondiso semakethe, isidingo sama-wafers e-4H-SiC angenawo ugesi siyakhula ngezinkambu ezikhulayo ze-elekthronikhi yamandla, i-RF kanye ne-optoelectronics. Lokhu kungenxa yokuthi i-silicon carbide inezinhlobo eziningi zezicelo, okuhlanganisa ukusebenza kahle kwamandla, izimoto zikagesi, amandla avuselelekayo kanye nokuxhumana. Esikhathini esizayo, imakethe yama-wafers e-4H-SiC angenawo ugesi isathembisa kakhulu futhi kulindeleke ukuthi ithathe indawo yezinto ezivamile ze-silicon ezisetshenziswayo ezihlukahlukene.