I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade

Incazelo emfushane:

I-substrate ye-silicon Carbide (SiC) eyodwa ye-6H n-type iyinto ebalulekile ye-semiconductor esetshenziswa kakhulu ezinhlelweni ze-elekthronikhi ezinamandla aphezulu, amaza aphezulu, kanye nokushisa okuphezulu. Idume ngesakhiwo sayo sekristalu esinama-hexagonal, i-6H-N SiC inikeza igebe elibanzi kanye nokushisa okuphezulu, okwenza ifaneleke kakhulu ezindaweni ezidinga amandla amaningi.
Insimu kagesi ewohloka kakhulu yale nto kanye nokuhamba kwama-electron kwenza kube nokwenzeka ukuthuthukiswa kwamadivayisi kagesi asebenza kahle, njenge-MOSFET kanye ne-IGBT, angasebenza ngama-voltage aphezulu kanye namazinga okushisa kunalawo enziwe nge-silicon yendabuko. Ukuqhuba kwayo okuhle kakhulu kokushisa kuqinisekisa ukushabalaliswa kokushisa okuphumelelayo, okubalulekile ekugcineni ukusebenza kanye nokuthembeka ekusetshenzisweni kwamandla aphezulu.
Ekusetshenzisweni kwe-radiofrequency (RF), izakhiwo ze-6H-N SiC zisekela ukudalwa kwamadivayisi akwazi ukusebenza kumaza aphezulu ngokusebenza kahle okuthuthukisiwe. Ukuqina kwayo kwamakhemikhali kanye nokumelana nemisebe nakho kuyenza ifaneleke ukusetshenziswa ezindaweni ezinzima, okuhlanganisa nemikhakha yezindiza kanye nezokuvikela.
Ngaphezu kwalokho, ama-substrate e-6H-N SiC abalulekile kumadivayisi e-optoelectronic, njenge-ultraviolet photodetectors, lapho i-bandgap yawo ebanzi ivumela ukutholakala kokukhanya kwe-UV okuphumelelayo. Ukuhlanganiswa kwalezi zakhiwo kwenza i-6H n-type SiC ibe yinto eguquguqukayo futhi ebalulekile ekuthuthukiseni ubuchwepheshe besimanje be-elekthronikhi kanye ne-optoelectronic.

Sithumelele i-imeyili

Izici

Okulandelayo yizici ze-silicon carbide wafer:

· Igama Lomkhiqizo: I-SiC Substrate
· Isakhiwo Esinezinhlangothi Eziyisithupha: Izakhiwo ze-elekthronikhi ezihlukile.
· Ukuhamba Okuphezulu Kwe-Electron: ~600 cm²/V·s.
· Ukuzinza Kwamakhemikhali: Amelana nokugqwala.
· Ukumelana Nemisebe: Kufanelekela izindawo ezilukhuni.
· Ukuhlushwa Okuphansi Kwangaphakathi Kokuthwala: Kusebenza kahle emazingeni okushisa aphezulu.
· Ukuqina: Izakhiwo eziqinile zemishini.
· Amandla e-Optoelectronic: Ukutholwa kokukhanya kwe-UV okuphumelelayo.

I-silicon carbide wafer inezinhlelo zokusebenza eziningana

Izicelo ze-SiC wafer:
Izisekelo ze-SiC (Silicon Carbide) zisetshenziswa ezinhlelweni ezahlukahlukene zokusebenza okuphezulu ngenxa yezakhiwo zazo ezihlukile njengokuqhuba okuphezulu kokushisa, amandla aphezulu ensimu kagesi, kanye negebe elibanzi. Nazi ezinye zezinhlelo zokusebenza:

1. Amandla kagesi:
· Ama-MOSFET ane-voltage ephezulu
·IGBTs (Ama-Transistors e-Bipolar Gate Afakwe Ukushisa)
· Ama-diode e-Schottky
·Ama-inverter kagesi

2. Amadivayisi Avame Kakhulu:
·Ama-amplifiers e-RF (Radio Frequency)
·Ama-transistors e-microwave
· Amadivayisi e-Millimeter-wave

3. I-Electronics Esezingeni Eliphezulu Lokushisa:
·Izinzwa namasekethe ezindawo ezinzima
·Izinto zikagesi ze-Aerospace
·Izimoto zikagesi (isib., amayunithi okulawula injini)

4. Optoelectronics:
·Izitholi ze-Ultraviolet (UV)
· Ama-diode akhipha ukukhanya (ama-LED)
· Ama-diode e-laser

5. Izinhlelo Zamandla Avuselelekayo:
·Ama-inverter elanga
·Iziguquli ze-turbine yomoya
·Izitimela zikagesi zezimoto zikagesi

6. Ezezimboni kanye Nezokuvikela:
· Izinhlelo ze-radar
·Ukuxhumana ngesathelayithi
·Izinsimbi ze-reactor yenyukliya

Ukwenza ngokwezifiso i-SiC wafer

Singakwazi ukwenza ngokwezifiso usayizi we-substrate ye-SiC ukuze ihlangabezane nezidingo zakho ezithile. Siphinde sinikeze i-wafer ye-4H-Semi HPSI SiC enosayizi ongu-10x10mm noma u-5x5 mm.
Intengo inqunywa yicala, futhi imininingwane yokupakisha ingenziwa ngokwezifiso ngokuthanda kwakho.
Isikhathi sokulethwa singaphakathi kwamasonto ama-2-4. Samukela inkokhelo nge-T/T.
Ifektri yethu inemishini yokukhiqiza ethuthukisiwe kanye nethimba lobuchwepheshe, elingenza ngezifiso imininingwane ehlukahlukene, ubukhulu kanye nezimo ze-wafer ye-SiC ngokuya ngezidingo ezithile zamakhasimende.