I-substrate ye-SIC engu-12 intshi i-silicon carbide prime grade diameter 300mm enkulu 4H-N Ifanelekela ukushabalalisa ukushisa kwedivayisi enamandla aphezulu

I-substrate ye-SIC engu-12 intshi i-silicon carbide prime grade diameter 300mm usayizi omkhulu 4H-N Ifanele ukushabalalisa ukushisa kwedivayisi enamandla aphezulu Isithombe Esifakiwe

Incazelo emfushane:

I-substrate ye-silicon carbide engamasentimitha angu-12 (i-substrate ye-SiC) iyi-substrate enkulu, esebenza kahle kakhulu ye-semiconductor material eyenziwe ngekristalu elilodwa le-silicon carbide. I-Silicon carbide (i-SiC) iyi-wide band gap semiconductor material enezakhiwo ezinhle kakhulu zikagesi, ezishisayo nezemishini, esetshenziswa kabanzi ekwenziweni kwamadivayisi kagesi ezindaweni ezinamandla aphezulu, ezivame kakhulu kanye nezimo zokushisa eziphakeme. I-substrate engamasentimitha angu-12 (300mm) iyincazelo ethuthukisiwe yamanje yobuchwepheshe be-silicon carbide, engathuthukisa kakhulu ukusebenza kahle kokukhiqiza futhi inciphise izindleko.

Sithumelele i-imeyili

Izici

Izici zomkhiqizo

1. Ukushisa okuphezulu: Ukushisa okuphezulu kwe-silicon carbide kungaphezu kokuphindwe kathathu kunokushisa kwe-silicon, okufanelekela ukushabalaliswa kokushisa kwedivayisi enamandla aphezulu.

2. Amandla ensimu yokuqhekeka okuphezulu: Amandla ensimu yokuqhekeka aphindwe kayishumi kune-silicon, afanele ukusetshenziswa ngomfutho ophezulu.

3. Isikhala sebhendi ebanzi: Isikhala sebhendi singama-3.26eV (4H-SiC), sifanele ukusetshenziswa kwezinga lokushisa eliphezulu kanye nemvamisa ephezulu.

4. Ubulukhuni obuphezulu: Ubulukhuni be-Mohs bungu-9.2, bulandela idayimane kuphela, ukumelana okuhle kakhulu nokuguguleka kanye namandla omshini.

5. Ukuqina kwamakhemikhali: ukumelana nokugqwala okunamandla, ukusebenza okuzinzile ezindaweni ezishisa kakhulu kanye nendawo enzima.

6. Usayizi omkhulu: i-substrate engamasentimitha angu-12 (300mm), ithuthukisa ukusebenza kahle kokukhiqiza, inciphise izindleko zeyunithi.

7. Ubuningi obuphansi besici: ubuchwepheshe bokukhula kwekristalu elilodwa elisezingeni eliphezulu ukuqinisekisa ubuningi obuphansi besici kanye nokungaguquguquki okuphezulu.

Isiqondiso sohlelo lokusebenza oluyinhloko lomkhiqizo

1. Ama-elekthronikhi anamandla:

Ama-Mosfet: Asetshenziswa ezimotweni zikagesi, ezimotweni zezimboni kanye naseziguqulini zikagesi.

Ama-diode: njenge-Schottky diode (SBD), asetshenziselwa ukulungisa kahle nokushintsha izinsiza zamandla.

2. Amadivayisi e-Rf:

I-amplifier yamandla e-Rf: isetshenziswa eziteshini zokuxhumana ze-5G kanye nokuxhumana kwesathelayithi.

Amadivayisi e-microwave: Afanele izinhlelo zokuxhumana ze-radar kanye ne-wireless.

3. Izimoto ezintsha zamandla:

Izinhlelo zokushayela ngogesi: izilawuli zezimoto kanye nama-inverter ezimoto zikagesi.

Inqwaba yokushaja: Imodyuli yamandla yemishini yokushaja okusheshayo.

4. Izicelo zezimboni:

I-inverter enamandla aphezulu: yokulawula izimoto zezimboni kanye nokuphathwa kwamandla.

Igridi ehlakaniphile: Yeziguquli ze-HVDC kanye ne-electronics zamandla.

5. Izindiza:

Ama-elekthronikhi okushisa okuphezulu: afanele izindawo ezishisa kakhulu zemishini yezindiza.

6. Insimu yocwaningo:

Ucwaningo olubanzi lwe-bandgap semiconductor: lokuthuthukiswa kwezinto ezintsha ze-semiconductor namadivayisi.

I-substrate ye-silicon carbide engamasentimitha angu-12 uhlobo lwe-substrate yezinto ze-semiconductor ezisebenza kahle kakhulu enezakhiwo ezinhle kakhulu njengokushisa okuphezulu, amandla ensimu aqhekekile kakhulu kanye negebe lebhendi elibanzi. Isetshenziswa kabanzi kuma-elekthronikhi kagesi, amadivayisi emvamisa yomsakazo, izimoto ezintsha zamandla, ukulawulwa kwezimboni kanye nezindiza, futhi iyinto ebalulekile yokukhuthaza intuthuko yesizukulwane esilandelayo samadivayisi kagesi asebenza kahle futhi anamandla aphezulu.

Nakuba ama-substrate e-silicon carbide okwamanje enezinhlelo zokusebenza ezimbalwa eziqondile kuma-electronics abathengi njengezibuko ze-AR, amandla awo ekuphathweni kwamandla okuphumelelayo kanye nama-electronics amancane angasekela izixazululo zamandla ezilula nezisebenza kahle zamadivayisi e-AR/VR esikhathi esizayo. Njengamanje, intuthuko eyinhloko ye-substrate ye-silicon carbide igxile emikhakheni yezimboni njengezimoto zamandla ezintsha, ingqalasizinda yokuxhumana kanye nokwenza izinto ngokuzenzakalela kwezimboni, futhi ikhuthaza imboni ye-semiconductor ukuthi ithuthuke ngendlela ephumelelayo nethembekile.

I-XKH izibophezele ekuhlinzekeni ngezinsizakalo ze-SIC eziyi-12 ezisezingeni eliphezulu ngokusekelwa kobuchwepheshe okuphelele kanye nezinsizakalo, okuhlanganisa:

1. Ukukhiqizwa okwenziwe ngokwezifiso: Ngokusho kwezidingo zamakhasimende ukuhlinzeka ngokumelana okuhlukile, ukuqondiswa kwekristalu kanye nesisekelo sokwelashwa kobuso.

2. Ukuthuthukisa izinqubo: Nikeza amakhasimende ukwesekwa kobuchwepheshe bokukhula kwe-epitaxial, ukukhiqizwa kwamadivayisi kanye nezinye izinqubo zokuthuthukisa ukusebenza komkhiqizo.

3. Ukuhlolwa kanye nesitifiketi: Nikeza ukutholwa kwamaphutha okuqinile kanye nesitifiketi sekhwalithi ukuqinisekisa ukuthi isisekelo sihlangabezana nezindinganiso zomkhakha.

4. Ukubambisana kwe-R&D: Hlanganani ukuthuthukisa amadivayisi amasha e-silicon carbide namakhasimende ukuze kukhuthazwe ubuchwepheshe obusha.

Ishadi ledatha

Incazelo ye-Substrate ye-Silicon Carbide (SiC) engu-1 2 intshi
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga (Ibanga lika-Z)	Ukukhiqizwa Okujwayelekile Ibanga (Ibanga le-P)		Ibanga Eliyimbumbulu (Ibanga lika-D)
Ububanzi		3 0 0 mm~305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Ukuqondiswa kwe-Wafer		I-axis evaliwe: 4.0° ibheke ku-<1120 >±0.5° ye-4H-N, I-axis evuliwe: <0001>±0.5° ye-4H-SI
Ubuningi be-Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukumelana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba		{10-10} ±5.0°
Ubude Obuphansi Obuyinhloko	4H-N	Akukho
	4H-SI	I-Notch
Ukukhishwa Komphetho		3 mm
I-LTV/TTV/Umnsalo/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Amapuleti e-Hex Ngokukhanya Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Ukufakwa kwekhabhoni ebonakalayo Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho Indawo eqongelelayo ≤0.05% Akukho Indawo eqongelelayo ≤0.05% Akukho			Ubude obuhlanganisiwe ≤ 20 mm, ubude obubodwa ≤2 mm Indawo ehlanganisiwe ≤0.1% Indawo eqongelelekayo ≤3% Indawo eqongelelayo ≤3% Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer
Ama-Edge Chips Ngokukhanya Okuphezulu		Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm			7 kuvunyelwe, ≤1 mm ngayinye
(TSD) Ukususwa kwesikulufo sokuhlanganisa intambo		≤500 cm-2		Akukho
(BPD) Ukuhlukana kwendiza eyisisekelo		≤1000 cm-2		Akukho
Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho
Ukupakisha		Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili
Amanothi:
1 Imikhawulo yamaphutha isebenza endaweni yonke ye-wafer ngaphandle kwendawo yokukhipha unqenqema. 2 Imihuzuko kufanele ihlolwe ebusweni bukaSi kuphela. 3 Idatha yokususwa kwezicubu ivela kuma-wafer aqoshiwe e-KOH kuphela.

I-XKH izoqhubeka nokutshala imali ocwaningweni nasekuthuthukisweni ukuze ikhuthaze impumelelo yezingxenye ze-silicon carbide ezingamasentimitha angu-12 ngobukhulu obukhulu, amaphutha aphansi kanye nokuvumelana okuphezulu, kuyilapho i-XKH ihlola ukusetshenziswa kwayo ezindaweni ezisanda kuvela njenge-electronics yabathengi (njengamamojula wamandla wamadivayisi e-AR/VR) kanye ne-quantum computing. Ngokunciphisa izindleko nokwandisa umthamo, i-XKH izoletha ukuchuma embonini ye-semiconductor.