I-SiC Substrate N Type engu-12 intshi Enkulu Esebenza Kakhulu Izicelo ze-RF

I-SiC Substrate engu-12 intshi Uhlobo lwe-N Usayizi Omkhulu Izinhlelo zokusebenza ze-RF Ezisebenza Kakhulu Isithombe Esivelele

Incazelo emfushane:

I-substrate ye-SiC engamasentimitha angu-12 imele intuthuko enkulu kwezobuchwepheshe bezinto ze-semiconductor, enikeza izinzuzo eziguqulayo ze-elekthronikhi yamandla kanye nezinhlelo zokusebenza zemvamisa ephezulu. Njengefomethi ye-wafer ye-silicon carbide enkulu kunazo zonke embonini etholakala kwezentengiselwano, i-substrate ye-SiC engamasentimitha angu-12 inika amandla omnotho angakaze abonwe wesilinganiso ngenkathi igcina izinzuzo zezinto ezibonakalayo zezimpawu ze-bandgap ezibanzi kanye nezakhiwo zokushisa ezihlukile. Uma kuqhathaniswa nama-wafer e-SiC ajwayelekile angamasentimitha angu-6 noma amancane, ipulatifomu engamasentimitha angu-12 inikeza indawo engasetshenziswa kakhulu engaphezu kuka-300% nge-wafer ngayinye, ikhulisa kakhulu isivuno se-die futhi inciphisa izindleko zokukhiqiza zamadivayisi kagesi. Lokhu kuguquka kosayizi kubonakalisa ukuvela komlando kwama-wafer e-silicon, lapho ukwanda kobubanzi ngakunye kuletha ukwehla okukhulu kwezindleko kanye nokuthuthukiswa kokusebenza. Ukuqhuba okuphezulu kokushisa kwe-substrate ye-SiC engamasentimitha angu-12 (cishe amasentimitha angu-3 kune-silicon) kanye namandla ensimu okuqhekeka okubucayi okwenza kube yigugu kakhulu ezinhlelweni zezimoto zikagesi zesizukulwane esilandelayo ze-800V, lapho kuvumela khona amamojula wamandla amancane futhi asebenzayo. Kungqalasizinda ye-5G, ijubane eliphezulu lokugcwala kwama-electron lale nto livumela amadivayisi e-RF ukuthi asebenze kumaza aphezulu ngokulahlekelwa okuphansi. Ukuhambisana kwe-substrate nemishini yokukhiqiza i-silicon eguquliwe nakho kwenza kube lula ukwamukelwa kalula yizinto ezikhona, yize ukuphathwa okukhethekile kuyadingeka ngenxa yobunzima obukhulu be-SiC (9.5 Mohs). Njengoba inani lokukhiqiza landa, i-substrate ye-SiC engamasentimitha angu-12 kulindeleke ukuthi ibe yindinganiso yezimboni yezinhlelo zokusebenza zamandla aphezulu, okushayela ukusungula izinto ezintsha kuzo zonke izinhlelo zezimoto, amandla avuselelekayo, kanye nokuguqulwa kwamandla ezimboni.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Imininingwane ye-Substrate ye-Silicon Carbide (SiC) engu-12 intshi
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga (Ibanga lika-Z)	Ukukhiqizwa Okujwayelekile Ibanga (Ibanga le-P)		Ibanga Eliyimbumbulu (Ibanga lika-D)
Ububanzi		3 0 0 mm~1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Ukuqondiswa kwe-Wafer		I-axis evaliwe: 4.0° ibheke ku-<1120 >±0.5° ye-4H-N, I-axis evuliwe: <0001>±0.5° ye-4H-SI
Ubuningi be-Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukumelana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba		{10-10} ±5.0°
Ubude Obuphansi Obuyinhloko	4H-N	Akukho
	4H-SI	I-Notch
Ukukhishwa Komphetho		3 mm
I-LTV/TTV/Umnsalo/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Amapuleti e-Hex Ngokukhanya Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Ukufakwa kwekhabhoni ebonakalayo Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho Indawo eqongelelayo ≤0.05% Akukho Indawo eqongelelayo ≤0.05% Akukho			Ubude obuhlanganisiwe ≤ 20 mm, ubude obubodwa ≤2 mm Indawo ehlanganisiwe ≤0.1% Indawo eqongelelekayo ≤3% Indawo eqongelelayo ≤3% Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer
Ama-Edge Chips Ngokukhanya Okuphezulu		Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm			7 kuvunyelwe, ≤1 mm ngayinye
(TSD) Ukususwa kwesikulufo sokuhlanganisa intambo		≤500 cm-2		Akukho
(BPD) Ukuhlukana kwendiza eyisisekelo		≤1000 cm-2		Akukho
Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho
Ukupakisha		Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili
Amanothi:
1 Imikhawulo yamaphutha isebenza endaweni yonke ye-wafer ngaphandle kwendawo yokukhipha unqenqema. 2 Imihuzuko kufanele ihlolwe ebusweni bukaSi kuphela. 3 Idatha yokususwa kwezicubu ivela kuma-wafer aqoshiwe e-KOH kuphela.

Izici Eziyinhloko

1. Inzuzo Yobukhulu Obukhulu: I-substrate ye-SiC engamasentimitha angu-12 (i-substrate ye-silicon carbide engamasentimitha angu-12) inikeza indawo enkulu ye-single-wafer, okwenza kube nama-chips amaningi akhiqizwa nge-wafer ngayinye, ngaleyo ndlela kunciphisa izindleko zokukhiqiza futhi kwandiswe isivuno.
2. Izinto Ezisebenza Kakhulu: Ukumelana nokushisa okuphezulu kwe-silicon carbide kanye namandla ensimu aqhekekile kakhulu kwenza i-substrate engamasentimitha angu-12 ifaneleke kakhulu ekusetshenzisweni kwe-voltage ephezulu kanye ne-frequency ephezulu, njenge-EV inverters kanye nezinhlelo zokushaja okusheshayo.
3. Ukuhambisana Kokucubungula: Naphezu kobunzima obukhulu kanye nezinselele zokucubungula ze-SiC, i-substrate ye-SiC engamasentimitha angu-12 ifinyelela amaphutha aphansi ebusweni ngokusebenzisa amasu okusika nokupholisha athuthukisiwe, okuthuthukisa ukukhiqizwa kwedivayisi.
4. Ukuphathwa Okuphezulu Kokushisa: Njengoba i-thermal conductivity ingcono kunezinto ezisekelwe ku-silicon, i-substrate engamasentimitha angu-12 ibhekana ngempumelelo nokushabalaliswa kokushisa kumadivayisi anamandla amakhulu, yandisa isikhathi sokuphila kwemishini.

Izinhlelo Eziyinhloko

1. Izimoto Zikagesi: I-substrate ye-SiC engamasentimitha angu-12 (i-substrate ye-silicon carbide engamasentimitha angu-12) iyisici esiyinhloko sezinhlelo zokushayela zikagesi zesizukulwane esilandelayo, okuvumela ama-inverter asebenza kahle kakhulu athuthukisa ububanzi futhi anciphise isikhathi sokushaja.

2. Iziteshi Zesisekelo ze-5G: Iziteshi zesisekelo ze-SiC ezinkulu zisekela amadivayisi e-RF asebenza ngesivinini esiphezulu, zihlangabezana nezidingo zeziteshi zesisekelo ze-5G zamandla aphezulu kanye nokulahlekelwa okuphansi.

3. Izimpahla Zikagesi Zezimboni: Kuma-solar inverters kanye nama-smart grid, i-substrate engamasentimitha angu-12 ingamelana nama-voltage aphezulu ngenkathi inciphisa ukulahleka kwamandla.

4. Ama-elekthronikhi Abathengi: Amashaja asheshayo esikhathi esizayo kanye nezinsiza zamandla zesikhungo sedatha zingasebenzisa ama-substrate e-SiC angu-12-intshi ukuze kufezwe ubukhulu obuncane kanye nokusebenza kahle okuphezulu.

Izinsizakalo ze-XKH

Singochwepheshe kumasevisi okucubungula enziwe ngokwezifiso ama-substrate e-SiC angu-12 intshi (ama-substrate e-silicon carbide angu-12 intshi), okuhlanganisa:
1. Ukusika nokuhlanza: Ukucubungula i-substrate okunomonakalo ophansi, okusicaba kakhulu okwenzelwe izidingo zamakhasimende, okuqinisekisa ukusebenza okuzinzile kwedivayisi.
2. Ukusekelwa Kokukhula Kwe-Epitaxial: Izinsizakalo ze-epitaxial wafer ezisezingeni eliphezulu zokusheshisa ukukhiqizwa kwama-chip.
3. I-Small-Batch Prototyping: Isekela ukuqinisekiswa kwe-R&D kwezikhungo zocwaningo kanye namabhizinisi, inciphisa imijikelezo yentuthuko.
4. Ukubonisana Ngobuchwepheshe: Izixazululo eziqala kusukela ekukhetheni izinto kuya ekwenzeni ngcono izinqubo, okusiza amakhasimende ukuba anqobe izinselele zokucubungula i-SiC.
Kungakhathaliseki ukuthi kukhiqizwa ngobuningi noma kwenziwe ngokwezifiso okukhethekile, izinsizakalo zethu ze-substrate ze-SiC ezingamasentimitha angu-12 zihambisana nezidingo zakho zephrojekthi, zinika amandla intuthuko yezobuchwepheshe.