I-substrate engu-12 intshi ye-SiC Ububanzi 300mm Ubukhulu 750μm 4H-N Uhlobo lungenziwa ngezifiso

Incazelo emfushane:

Esimweni esibucayi sokushintshela embonini ye-semiconductor kuya ezixazululweni ezisebenza kahle nezincane, ukuvela kwe-substrate ye-SiC engamasentimitha angu-12 (i-substrate ye-silicon carbide engamasentimitha angu-12) kushintshe kakhulu isimo sendawo. Uma kuqhathaniswa nemininingwane yendabuko engamasentimitha angu-6 kanye namasentimitha angu-8, inzuzo enkulu ye-substrate engamasentimitha angu-12 yandisa inani lama-chips akhiqizwa nge-wafer ngayinye ngokuphindwe kane. Ngaphezu kwalokho, izindleko zeyunithi ye-substrate ye-SiC engamasentimitha angu-12 zincishiswe ngo-35-40% uma kuqhathaniswa ne-substrate evamile engamasentimitha angu-8, okubalulekile ekwamukelweni kabanzi kwemikhiqizo yokugcina.
Ngokusebenzisa ubuchwepheshe bethu bokukhulisa ukuthuthwa komusi, sifinyelele ukulawula okuhamba phambili embonini phezu kobuningi bokuhlukaniswa kwamakristalu angu-12 intshi, okuhlinzeka ngesisekelo esiyingqayizivele sezinto zokwakha amadivayisi alandelayo. Lokhu kuthuthuka kubaluleke kakhulu phakathi nokuntuleka kwama-chip emhlabeni jikelele njengamanje.

Amadivayisi kagesi abalulekile ekusetshenzisweni kwansuku zonke—njengeziteshi zokushaja okusheshayo ze-EV kanye neziteshi zesisekelo ze-5G—aya ngokuya esebenzisa le substrate enkulu. Ikakhulukazi ezindaweni zokusebenza ezinokushisa okuphezulu, ezinamandla aphezulu, kanye nezinye izindawo zokusebenza ezinzima, i-substrate ye-SiC engamasentimitha angu-12 ibonisa ukuzinza okuphezulu kakhulu uma kuqhathaniswa nezinto ezisekelwe ku-silicon.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Imininingwane ye-Substrate ye-Silicon Carbide (SiC) engu-12 intshi
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga (Ibanga lika-Z)	Ukukhiqizwa Okujwayelekile Ibanga (Ibanga le-P)		Ibanga Eliyimbumbulu (Ibanga lika-D)
Ububanzi		3 0 0 mm~1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Ukuqondiswa kwe-Wafer		I-axis evaliwe: 4.0° ibheke ku-<1120 >±0.5° ye-4H-N, I-axis evuliwe: <0001>±0.5° ye-4H-SI
Ubuningi be-Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukumelana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba		{10-10} ±5.0°
Ubude Obuphansi Obuyinhloko	4H-N	Akukho
	4H-SI	I-Notch
Ukukhishwa Komphetho		3 mm
I-LTV/TTV/Umnsalo/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Amapuleti e-Hex Ngokukhanya Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Ukufakwa kwekhabhoni ebonakalayo Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho Indawo eqongelelayo ≤0.05% Akukho Indawo eqongelelayo ≤0.05% Akukho			Ubude obuhlanganisiwe ≤ 20 mm, ubude obubodwa ≤2 mm Indawo ehlanganisiwe ≤0.1% Indawo eqongelelekayo ≤3% Indawo eqongelelayo ≤3% Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer
Ama-Edge Chips Ngokukhanya Okuphezulu		Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm			7 kuvunyelwe, ≤1 mm ngayinye
(TSD) Ukususwa kwesikulufo sokuhlanganisa intambo		≤500 cm-2		Akukho
(BPD) Ukuhlukana kwendiza eyisisekelo		≤1000 cm-2		Akukho
Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho
Ukupakisha		Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esilodwa Sesitsha Esinezitsha Ezincane
Amanothi:
1 Imikhawulo yamaphutha isebenza endaweni yonke ye-wafer ngaphandle kwendawo yokukhipha unqenqema. 2 Imihuzuko kufanele ihlolwe ebusweni bukaSi kuphela. 3 Idatha yokususwa kwezicubu ivela kuma-wafer aqoshiwe e-KOH kuphela.

Izici Eziyinhloko

1. Amandla Okukhiqiza kanye Nezinzuzo Zezindleko: Ukukhiqizwa ngobuningi kwe-substrate ye-SiC engamasentimitha angu-12 (i-substrate ye-silicon carbide engamasentimitha angu-12) kuphawula inkathi entsha ekukhiqizweni kwe-semiconductor. Inani lama-chips atholakala ku-wafer eyodwa lifinyelela izikhathi ezingu-2.25 kune-substrate engamasentimitha angu-8, okuqhuba ngqo ijubane ekusebenzeni kahle kokukhiqiza. Impendulo yamakhasimende ikhombisa ukuthi ukwamukela ama-substrate angamasentimitha angu-12 kunciphise izindleko zawo zokukhiqiza imodyuli yamandla ngo-28%, okudala inzuzo yokuncintisana eqinile emakethe ephikiswana kakhulu.
2. Izakhiwo Ezivelele Zomzimba: I-substrate ye-SiC engamasentimitha angu-12 izuza zonke izinzuzo zezinto ze-silicon carbide - ukuhanjiswa kwayo kokushisa kuphindwe kathathu kune-silicon, kuyilapho amandla ensimu yayo yokuqhekeka efinyelela izikhathi eziyishumi kune-silicon. Lezi zici zivumela amadivayisi asekelwe kuma-substrate angamasentimitha angu-12 ukuthi asebenze ngokuzinzile ezindaweni ezinokushisa okuphezulu okungaphezu kuka-200°C, okwenza afaneleke kakhulu ekusetshenzisweni okudingakalayo njengezimoto zikagesi.
3. Ubuchwepheshe Bokwelapha Ubuso: Sithuthukise inqubo entsha yokupholisha ngomshini wamakhemikhali (i-CMP) ngqo kuma-substrate e-SiC angu-12-intshi, sifinyelela ukuthamba kobuso obusezingeni le-athomu (i-Ra<0.15nm). Lokhu kuphumelela kuxazulula inselele yomhlaba wonke yokwelashwa kobuso be-silicon carbide wafer obukhulu, kususe izithiyo zokukhula kwe-epitaxial kwekhwalithi ephezulu.
4. Ukusebenza Kokuphathwa Kokushisa: Ezinhlelweni ezisebenzayo, ama-substrate e-SiC angu-12-intshi abonisa amakhono amangalisayo okuhlakaza ukushisa. Idatha yokuhlola ikhombisa ukuthi ngaphansi kobuningi bamandla obufanayo, amadivayisi asebenzisa ama-substrate angu-12-intshi asebenza emazingeni okushisa angu-40-50°C aphansi kunamadivayisi asekelwe ku-silicon, okwandisa kakhulu impilo yesevisi yemishini.

Izinhlelo Eziyinhloko

1. Uhlelo Olusha Lwezimoto Zamandla: I-substrate ye-SiC engamasentimitha angu-12 (i-substrate ye-silicon carbide engamasentimitha angu-12) iguqula ukwakheka kwe-powertrain yezimoto zikagesi. Kusukela kumashaja angaphakathi (i-OBC) kuya kuma-inverter amakhulu kanye nezinhlelo zokuphatha amabhethri, ukuthuthukiswa kokusebenza kahle okulethwe yi-substrate engamasentimitha angu-12 kwandisa ububanzi bezimoto ngo-5-8%. Imibiko evela kumenzi wezimoto ohamba phambili ikhombisa ukuthi ukusebenzisa i-substrate yethu engamasentimitha angu-12 kunciphisa ukulahleka kwamandla ohlelweni lwayo lokushaja okusheshayo ngo-62%.
2. Umkhakha Wamandla Avuselelekayo: Eziteshini zamandla ze-photovoltaic, ama-inverter asekelwe kuma-substrate e-SiC angu-12-intshi awagcini nje ngokuba nezici ezincane kodwa futhi afinyelela ukusebenza kahle kokuguqulwa okungaphezu kuka-99%. Ikakhulukazi ezimweni zokukhiqiza ezisatshalaliswayo, lokhu kusebenza okuphezulu kuhumusha ukonga kwaminyaka yonke kwamakhulu ezinkulungwane zama-yuan ekulahlekelweni kukagesi kwabasebenzi.
3. Ukuzenzakalela Kwezimboni: Ama-frequency converter asebenzisa ama-substrate angu-12-intshi abonisa ukusebenza okuhle kakhulu kumarobhothi ezimboni, amathuluzi omshini we-CNC, kanye neminye imishini. Izici zawo zokushintsha imvamisa ephezulu zithuthukisa isivinini sokuphendula kwemoto ngo-30% ngenkathi zinciphisa ukuphazamiseka kwe-electromagnetic kube yinye kwezintathu zezixazululo ezivamile.
4. Ukusungula Izinto Ezintsha Ze-elekthronikhi Zabathengi: Ubuchwepheshe bokushaja okusheshayo be-smartphone yesizukulwane esilandelayo buqalile ukusebenzisa ama-substrate e-SiC angu-12-intshi. Kucatshangwa ukuthi imikhiqizo yokushaja okusheshayo engaphezu kuka-65W izoshintshela ngokuphelele kwizixazululo ze-silicon carbide, kanti ama-substrate angu-12-intshi avela njengokukhetha okuhle kakhulu kokusebenza kwezindleko.

Izinsizakalo Zenziwe Ngokwezifiso ze-XKH ze-Substrate ye-SiC engu-12-intshi

Ukuze kuhlangatshezwane nezidingo ezithile ze-substrates ze-SiC ezingamasentimitha angu-12 (i-substrates ze-silicon carbide ezingamasentimitha angu-12), i-XKH inikeza ukwesekwa kwesevisi okuphelele:
1. Ukwenza ngokwezifiso ubukhulu:
Sihlinzeka ngezingxenye ezincane ezingamasentimitha angu-12 ngezinhlobo ezahlukene zobukhulu okuhlanganisa no-725μm ukuze kuhlangatshezwane nezidingo ezahlukene zohlelo lokusebenza.
2. Ukuhlushwa kwe-Doping:
Ukukhiqiza kwethu kusekela izinhlobo eziningi zokuqhuba okuhlanganisa izinhlobo ze-n-type kanye ne-p-type, ngokulawula okunembile kokumelana okuphakathi kuka-0.01-0.02Ω·cm.
3. Izinsizakalo Zokuhlola:
Ngemishini yokuhlola ephelele yezinga le-wafer, sinikeza imibiko ephelele yokuhlola.
I-XKH iyaqonda ukuthi ikhasimende ngalinye linezidingo ezihlukile ze-substrates ze-SiC ezingamasentimitha angu-12. Ngakho-ke sinikeza amamodeli okubambisana kwebhizinisi aguquguqukayo ukuze sinikeze izixazululo ezincintisana kakhulu, kungakhathaliseki ukuthi ze:
· Amasampula e-R&D
· Ukuthengwa komkhiqizo omningi
Izinsizakalo zethu ezenziwe ngokwezifiso ziqinisekisa ukuthi singahlangabezana nezidingo zakho zobuchwepheshe nezokukhiqiza ezithile ze-substrates ze-SiC ezingamasentimitha angu-12.