I-Wafer ye-Sapphire engu-12 intshi yokukhiqiza i-High-Volume Semiconductor

Incazelo emfushane:

I-wafer ye-sapphire engamasentimitha angu-12 yenzelwe ukuhlangabezana nesidingo esikhulayo sokukhiqizwa kwe-semiconductor yendawo enkulu, ene-high-throughput kanye ne-optoelectronic. Njengoba ukwakheka kwamadivayisi kuqhubeka nokukhula futhi imigqa yokukhiqiza iqhubekela kumafomethi e-wafer amakhulu, ama-substrates e-sapphire anobubanzi obukhulu kakhulu anikeza izinzuzo ezicacile ekukhiqizeni, ukwenza ngcono isivuno, kanye nokulawula izindleko.


Izici

Umdwebo Oningiliziwe

ingilazi yesafire engu-pl30139633-12
i-wafer yesafire

Isingeniso se-wafer yesafire engu-intshi ezingu-12

I-wafer ye-sapphire engamasentimitha angu-12 yenzelwe ukuhlangabezana nesidingo esikhulayo sokukhiqizwa kwe-semiconductor yendawo enkulu, ene-high-throughput kanye ne-optoelectronic. Njengoba ukwakheka kwamadivayisi kuqhubeka nokukhula futhi imigqa yokukhiqiza iqhubekela kumafomethi e-wafer amakhulu, ama-substrates e-sapphire anobubanzi obukhulu kakhulu anikeza izinzuzo ezicacile ekukhiqizeni, ukwenza ngcono isivuno, kanye nokulawula izindleko.

Ekhiqizwe nge-Al₂O₃ yekristalu eyodwa emsulwa kakhulu, ama-wafer ethu e-sapphire angu-12 intshi ahlanganisa amandla amahle kakhulu okusebenza, ukuzinza kokushisa, kanye nekhwalithi yobuso. Ngokukhula kwekristalu okulungiselelwe kanye nokucutshungulwa kwe-wafer okunembile, lawa ma-substrate aletha ukusebenza okuthembekile kwezinhlelo zokusebenza ze-LED ezithuthukisiwe, i-GaN, kanye ne-semiconductor ezikhethekile.

Izici Zezinto Ezibalulekile

 

I-Sapphire (i-single-crystal aluminium oxide, i-Al₂O₃) yaziwa kakhulu ngezakhiwo zayo ezivelele zomzimba nezamakhemikhali. Ama-wafer e-sapphire angamasentimitha angu-12 athola zonke izinzuzo zezinto ze-sapphire ngenkathi ehlinzeka ngendawo engaphezulu engasetshenziswa kakhulu.

Izici ezibalulekile zezinto zifaka:

  • Ubulukhuni obuphezulu kakhulu kanye nokumelana nokuguguleka

  • Ukuqina okuhle kakhulu kokushisa kanye nendawo ephezulu yokuncibilika

  • Ukumelana okuphezulu kwamakhemikhali nama-asidi nama-alkali

  • Ukukhanya okuphezulu kokukhanya kusukela kuma-wavelength e-UV kuya ku-IR

  • Izakhiwo ezinhle kakhulu zokuvimbela ugesi

Lezi zici zenza ama-wafer e-sapphire angu-12 intshi afanelekele izindawo zokucubungula ezinzima kanye nezinqubo zokukhiqiza ze-semiconductor ezishisa kakhulu.

Inqubo Yokukhiqiza

Ukukhiqizwa kwama-wafer e-sapphire angu-12 intshi kudinga ukukhula kwekristalu okuthuthukisiwe kanye nobuchwepheshe bokucubungula obunembile kakhulu. Inqubo evamile yokukhiqiza ifaka:

  1. Ukukhula Kwekristalu Elilodwa
    Amakristalu e-sapphire acwengekile kakhulu akhuliswa kusetshenziswa izindlela ezithuthukisiwe ezifana ne-KY noma ezinye izindlela zokukhulisa amakristalu ezinobubanzi obukhulu, okuqinisekisa ukuqondiswa okufanayo kwamakristalu kanye nokucindezeleka okuphansi kwangaphakathi.

  2. Ukubumba Nokusika Amakristalu
    Ingot ye-sapphire ibunjwe kahle futhi inqunywe yaba ama-wafer angu-12 intshi kusetshenziswa imishini yokusika enokunemba okuphezulu ukuze kuncishiswe umonakalo ongaphansi komhlaba.

  3. Ukugoqa Nokupholisha
    Izinqubo ze-multi-step lapping kanye ne-chemical mechanical polishing (CMP) ziyasetshenziswa ukuze kufezwe ukugoba kobuso, ukuba yisicaba, kanye nokufana kobukhulu.

  4. Ukuhlanza Nokuhlola
    I-wafer ngayinye ye-sapphire engamasentimitha angu-12 ihlanzwa kahle futhi ihlolwe ngokuqinile, okuhlanganisa ikhwalithi yobuso, i-TTV, i-bow, i-warp, kanye nokuhlaziywa kwamaphutha.

Izicelo

Ama-wafer e-sapphire angu-12 intshi asetshenziswa kabanzi kubuchwepheshe obuthuthukisiwe nobusha, okuhlanganisa:

  • Izisekelo ze-LED ezinamandla aphezulu nokukhanya okuphezulu

  • Amadivayisi kagesi asekelwe ku-GaN namadivayisi e-RF

  • Isithwali semishini ye-semiconductor kanye ne-insulating substrates

  • Amafasitela abonakalayo kanye nezingxenye zokukhanya zendawo enkulu

  • Ukupakisha kwe-semiconductor okuthuthukisiwe kanye nabathwali bezinqubo ezikhethekile

Ububanzi obukhulu buvumela ukukhiqiza okuphezulu kanye nokusebenza kahle kwezindleko ekukhiqizweni ngobuningi.

Izinzuzo zama-Sapphire Wafers angu-12 intshi

  • Indawo enkulu engasetshenziswa ukuze kukhishwe idivayisi ephezulu nge-wafer ngayinye

  • Ukuqina kwenqubo okuthuthukisiwe kanye nokufana

  • Izindleko ezincishisiwe ngedivayisi ngayinye ekukhiqizweni okuphezulu

  • Amandla amahle kakhulu okusebenza ngomshini wokuphatha ngobukhulu obukhulu

  • Imininingwane engenziwa ngezifiso yezinhlelo zokusebenza ezahlukene

 

Izinketho Zokwenza Ngokwezifiso

Sinikeza ukwenza ngokwezifiso okuguquguqukayo kwama-wafers e-sapphire angu-12 intshi, kufaka phakathi:

  • Ukuqondiswa kwekristalu (indiza engu-C, indiza engu-A, indiza engu-R, njll.)

  • Ukujiya kanye nokubekezelela ububanzi

  • Ukupholisha ohlangothini olulodwa noma ohlangothini oluphindwe kabili

  • Iphrofayili yomphetho kanye nomklamo we-chamfer

  • Izidingo zobulukhuni bomphezulu kanye nobuphansi

Ipharamitha Imininingwane Amanothi
Ububanzi be-Wafer Amasentimitha angu-12 (300 mm) I-wafer ejwayelekile enobubanzi obukhulu
Izinto I-Sapphire yekristalu elilodwa (Al₂O₃) Ubumsulwa obuphezulu, ibanga le-elekthronikhi/lokukhanya
Ukuqondiswa Kwekristalu Indiza engu-C (0001), indiza engu-A (11-20), indiza engu-R (1-102) Izindlela zokuqondisa ongazikhethela ziyatholakala
Ubukhulu 430–500 μm Ubukhulu obungokwezifiso buyatholakala uma uceliwe
Ukubekezelela Ubukhulu ±10 μm Ukubekezelelana okuqinile kwamadivayisi athuthukile
Ukwehluka Kobukhulu Obuphelele (i-TTV) ≤10 μm Iqinisekisa ukucutshungulwa okufanayo kuyo yonke i-wafer
Umnsalo ≤50 μm Kulinganiswe phezu kwe-wafer yonke
I-Warp ≤50 μm Kulinganiswe phezu kwe-wafer yonke
Ukuqedwa Komphezulu Ipholishwe ohlangothini olulodwa (SSP) / Ipholishwe ohlangothini olulodwa (DSP) Ubuso obuphezulu bekhwalithi yokukhanya
Ubulukhuni Bomphezulu (Ra) ≤0.5 nm (epholishiwe) Ubushelelezi bezinga le-athomu lokukhula kwe-epitaxial
Iphrofayili Yomphetho I-Chamfer / Unqenqema oluyindilinga Ukuvimbela ukuqhekeka ngesikhathi sokuphatha
Ukunemba Kokuqondisa ±0.5° Iqinisekisa ukukhula okufanele kwengqimba ye-epitaxial
Ubuningi obuphelele <10 cm⁻² Kukalwa ngokuhlolwa kokukhanya
Ukuthamba ≤2 μm / 100 mm Iqinisekisa i-lithography efanayo kanye nokukhula kwe-epitaxial
Ukuhlanzeka Ibanga 100 - Ibanga 1000 Iyahambisana negumbi lokuhlanza
Ukudluliselwa Kokukhanya >85% (UV–IR) Kuncike kubude be-wavelength kanye nobukhulu

 

Imibuzo Evame Ukubuzwa Nge-Wafer Ye-Sapphire Yamasentimitha angu-12

Q1: Bungakanani ubukhulu obujwayelekile be-wafer yesafire engamasentimitha angu-12?
A: Ubukhulu obujwayelekile busukela ku-430 μm kuya ku-500 μm. Ubukhulu obungokwezifiso bungakhiqizwa ngokwezidingo zamakhasimende.

 

Umbuzo 2: Yiziphi izindlela zokuhlobisa ngekristalu ezitholakalayo zama-wafers e-sapphire angu-12 intshi?
A: Sinikeza ukuqondiswa kwe-C-plane (0001), i-A-plane (11-20), kanye ne-R-plane (1-102). Ezinye ukuqondiswa kungenziwa ngezifiso ngokusekelwe ezidingweni ezithile zedivayisi.

 

Umbuzo 3: Iyini i-total thickness variation (TTV) ye-wafer?
A: Ama-wafer ethu e-sapphire angu-12 intshi ngokuvamile ane-TTV ≤10 μm, okuqinisekisa ukufana kuyo yonke indawo ye-wafer ukuze kwenziwe idivayisi esezingeni eliphezulu.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.

Mayelana NATHI

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