I-SiC Ceramic Tray End Effector Wafer Handling Custom-Made Components

Ithreyi ye-SiC Ceramic End Effector Wafer Iphatha Izingxenye Zenziwe Ngokwezifiso Isithombe Esifakiwe

Incazelo emfushane:

Izakhiwo ezijwayelekile	Amayunithi	Amanani
Isakhiwo		I-FCC β isigaba
Ukuqondisa	Isiqephu (%)	111 ekhethwayo
Ukuminyana ngobuningi	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Amandla Okushisa	J·kg⁻¹·K⁻¹	640
Ukunwetshwa kwe-Thermal 100–600 °C (212–1112 °F)	10⁻⁶·K⁻¹	4.5
I-Modulus Encane	I-GPa (4pt ukugoba, 1300°C)	430
Usayizi Wokusanhlamvu	μm	2~10
I-Sublimation Temperature	°C	2700
Amandla e-Flexural	I-MPa (RT 4-point)	415
I-Thermal conductivity	(W/mK)	300

Thumela i-imeyili kithi

Izici

I-SiC Ceramic & Alumina Ceramic Custom ComponentsKafushane

I-Silicon Carbide (SiC) Izingxenye Ze-Ceramic Custom

I-Silicon Carbide (SiC) izingxenye ze-ceramic ezenziwe ngokwezifiso ziyizinto zobumba ezisebenza kahle zezimboni ezidume ngokusebenza kwazo.ubulukhuni obuphezulu kakhulu, ukuzinza okuhle kakhulu kwe-thermal, ukumelana nokugqwala okukhethekile, kanye nokuhanjiswa kwe-thermal okuphezulu. I-Silicon Carbide (SiC) izingxenye zangokwezifiso ze-ceramic zinika amandla ukugcina ukuqina kwesakhiwoizinga lokushisa eliphezulu ngenkathi umelana nokuguguleka kusuka kuma-asidi aqinile, ama-alkali, nezinsimbi ezincibilikisiwe. I-ceramics ye-SiC ikhiqizwa ngezinqubo ezifanai-sintering engenangcindezi, i-reaction sintering, noma i-hot-press sinteringfuthi ingenziwa ngendlela oyifisayo ibe yizimo eziyinkimbinkimbi, okuhlanganisa izindandatho zokuvala izinsimbi, imikhono ye-shaft, imibhobho, amashubhu esithandweni somlilo, izikebhe ezilucwecwana, namapuleti aqinile angagugi.

Izingxenye ze-Alumina Ceramic Custom

I-Alumina (Al₂O₃) izingxenye zangokwezifiso zobumba ziyagcizelelahigh insulation, amandla amahle mechanical, futhi ukumelana ukugqoka. Ihlukaniswa ngamamaki ahlanzekile (isb., 95%, 99%), i-Alumina (Al₂O₃) izingxenye zangokwezifiso ze-ceramic ezinomshini wokunemba zivumela ukuthi zakhiwe zibe izivikeli, amabheringi, amathuluzi okusika, nezifakelo zezokwelapha. Ama-ceramics e-alumina akhiqizwa ngokuyinhloko ngokusebenzisaukucindezela okomile, ukubumba umjovo, noma izinqubo zokucindezela ze-isostatic, enendawo ecwebezelayo kuze kube sekupheleni kwesibuko.

I-XKH igxile kakhulu ku-R&D kanye nokukhiqizwa ngokwezifiso kwei-silicon carbide (SiC) kanye ne-alumina (Al₂O₃) ceramics. Imikhiqizo ye-ceramic ye-SiC igxile ekushiseni okuphezulu, ekugqokeni okuphezulu, nasezindaweni ezibolayo, ezimboza izinhlelo zokusebenza ze-semiconductor (isb., izikebhe eziyisilutshwana, ama-cantilever paddles, amashubhu omlilo) kanye nezingxenye zensimu ezishisayo nezigxivizo eziphezulu zemikhakha yamandla amasha. Imikhiqizo yobumba ye-alumina igcizelela ukuvala, ukuvala, kanye nezakhiwo ze-biomedical, okuhlanganisa ama-substrates e-elekthronikhi, izindandatho zokuvalwa kwemishini, nezifakelo zezokwelapha. Ukusebenzisa ubuchwepheshe obufanaukucindezela kwe-isostatic, ukucwilisa okungenasici, kanye nomshini wokunemba, sihlinzeka ngezixazululo ezenziwe ngokwezifiso ezisebenza kahle kakhulu ezimbonini ezihlanganisa ama-semiconductors, ama-photovoltaics, i-aerospace, ukwelashwa, nokucubungula kwamakhemikhali, siqinisekisa ukuthi izingxenye zihlangabezana nezidingo eziqinile zokunemba, ukuphila isikhathi eside, nokuthembeka ezimeni ezimbi kakhulu.

I-SiC Ceramic Functional Chucks & CMP Grinding DiscsIsingeniso

I-SiC Ceramic Vacuum Chucks

I-Silicon Carbide (SiC) I-Ceramic Vacuum Chucks ingamathuluzi okukhangisa anembe kakhulu akhiwe ngezinto ezisebenza kahle ze-silicon carbide (SiC) ceramic. Zidizayinelwe ngokukhethekile izinhlelo zokusebenza ezifuna ukuhlanzeka okukhulu nokuzinza, njenge-semiconductor, i-photovoltaic, nezimboni zokukhiqiza ezinembayo . Izinzuzo zabo eziyinhloko zifaka: indawo epholishiwe enezinga lesibuko (indawo ephansi elawulwa ngaphakathi kuka-0.3–0.5 μm), ukuqina okuphezulu kakhulu kanye ne-coefficient ephansi yokwanda okushisayo (ukuqinisekisa ukwakheka kwe-nano-level nokuzinza kwendawo), isakhiwo esilula kakhulu (okunciphisa kakhulu ukumelana nokunyakaza), ukuqina kokuqina kuya ku-9.5, okwedlula kude isikhathi sokuphila sezinsimbi zensimbi) . Lezi zakhiwo zinika amandla ukusebenza okuzinzile endaweni enamazinga okushisa aphakeme naphansi ashintshanayo, ukugqwala okuqinile, nokuphathwa kwesivinini esikhulu, okuthuthukisa kakhulu ukuvunwa kokucubungula nokusebenza kahle kokukhiqiza kwezingxenye ezinembayo njengama-wafers nama-optical elements.

I-Silicon Carbide (SiC) Bump Vacuum Chuck ye-Metrology kanye Nokuhlolwa

Idizayinelwe izinqubo zokuhlola ukukhubazeka kwe-wafer, leli thuluzi le-adsorption elinembe kakhulu lakhiwe kusukela ku-silicon carbide (SiC) impahla ye-ceramic. Isakhiwo sayo esiyingqayizivele seqhubu elingaphezulu sinikeza amandla okukhangisa nge-vacuum enamandla, kuyilapho kunciphisa indawo yokuxhumana ne-wafer, ngaleyo ndlela kuvimbele ukulimala noma ukungcoliswa kwendawo eyisicwecwana kanye nokuqinisekisa ukuzinza nokunemba ngesikhathi sokuhlolwa. I-chuck ifaka ukucaba okukhethekile (0.3–0.5 μm) kanye nendawo epholishwe ngesibuko, ehlanganiswe nesisindo esilula kakhulu kanye nokuqina okuphezulu ukuze kuqinisekiswe ukuzinza ngesikhathi sokunyakaza kwesivinini esikhulu. I-coefficient yakhona ephansi kakhulu yokunwetshwa kwe-thermal, iqinisekisa ukuzinza kwe-dimensional ngaphansi kokuguquguquka kwezinga lokushisa, kuyilapho ukumelana nokugqoka okuvelele kunweba impilo yesevisi. Umkhiqizo usekela ukwenziwa ngokwezifiso kokucaciswa okungu-6, 8, kanye no-12-intshi ukuze uhlangabezane nezidingo zokuhlolwa zamasayizi ama-wafer ahlukene.

I-Flip Chip Bonding Chuck

I-flip chip bonding chuck iyingxenye eyinhloko ezinqubweni ze-chip flip-chip bonding, edizayinelwe ngokukhethekile amawafa akhangayo—ukuqinisekisa ukuzinza ngesikhathi sokusebenza kwebhondi enesivinini esikhulu, nokunemba okuphezulu. Ifaka indawo epholishelwe ngesibuko(ukucaba/ukufana ≤1 μm) kanye nemisele yeshaneli yegesi enembayo ukuze kuzuzwe amandla afanayo okukhangisa kwe-vacuum, ukuvimbela ukugudluzwa kwe-wafer noma ukulimala. Ukuqina kwayo okuphezulu kanye ne-coefficient ephansi ephansi kakhulu yokunwetshwa kwe-thermal (eduze nezinto ze-silicon) kuqinisekisa ukuzinza kwe-dimensional ezindaweni eziboshiwe ezishisa kakhulu, kuyilapho okokusebenza okuxinene kakhulu (isb., i-silicon carbide noma izinto zobumba ezikhethekile) kuvimbela ngempumelelo ukungena kwegesi, nokugcina i-vacuum iqinile isikhathi eside. Lezi zici ngokuhlangene zisekela ukunemba kwe-micron-level bonding futhi zithuthukisa kakhulu isivuno sokupakishwa kwe-chip.

I-SiC Bonding Chuck

I-silicon carbide (SiC) i-bonding chuck iyisici esibalulekile ezinqubweni zokubopha ama-chip, eklanyelwe ngokukhethekile ukukhangisa nokuvikela ama-wafers, okuqinisekisa ukusebenza okuzinzile ngaphansi kwezimo ezisezingeni eliphezulu nezinengcindezi ephezulu. Ikhiqizwe kusuka ku-high-density silicon carbide ceramic (i-porosity <0.1%), ifinyelela ukusabalalisa kwamandla e-adsorption afanayo (ukuchezuka <5%) ngokusebenzisa ukupholisha kwesibuko sezinga le-nanometer(ubulukhuni obuphezulu u-Ra <0.1 μm) kanye nemisele enembe yesiteshi segesi (ububanzi bendawo eyi-0 μ μm), ivimbele ukucekelwa phansi kwendawo eyi-pore: 5m-. I-ultra-low coefficient yayo yokunweba okushisayo(4.5×10⁻⁶/℃) ifana kakhulu neyama-silicon wafers, inciphisa i-warpage ebangelwa ukucindezeleka okushisayo. Ihlanganiswe nokuqina okuphezulu((elastic modulus >400 GPa) kanye ≤1 μm flatness/parallelism, iqinisekisa ukunemba kokuqondanisa okubophayo. Isetshenziswa kakhulu ekufakweni kwe-semiconductor, ukupakishwa kwe-3D, kanye nokuhlanganiswa kwe-Chiplet, isekela izinhlelo zokusebenza zokukhiqiza ezisezingeni eliphezulu ezidinga ukunemba kwe-nanoscale nokuzinza okushisayo.

I-CMP Grinding Disc

I-CMP grinding disc iyingxenye eyinhloko ye-chemical mechanical polishing (CMP) okokusebenza, eklanyelwe ngokukhethekile ukubamba ngokuphephile futhi kunzinzise amawafa ngesikhathi sokupholisha ngesivinini esikhulu, okuvumela ukuhlelwa komhlaba kweleveli ye-nanometer. Yakhiwe kusukela ekuqineni okuphezulu, izinto eziminyanisa kakhulu (isb., izitsha zobumba ze-silicon carbide noma ama-alloys akhethekile), iqinisekisa ukufakwa kwe-vacuum efanayo ngokusebenzisa imisele yeshaneli yegesi eyenziwe ngokunemba. Indawo yayo epholishwe ngesibuko(ukucaba/ukufana ≤3 μm) iqinisekisa ukuthintana okungenangcindezi namawafa, kuyilapho i-ultra-low coefficient yokunwetshwa kwe-thermal(efaniswe ne-silicon) kanye namashaneli okupholisa angaphakathi kucindezela ngempumelelo ukuwohloka kokushisa. Ihambisana nama-wafers angu-12-intshi (ububanzi obungama-750 mm), i-disc ikhulisa ubuchwepheshe bokuhlanganisa i-diffusion, ukuze kuqinisekiswe ukuhlanganiswa okungenamthungo nokuthembeka kwesikhathi eside kwezakhiwo ze-multilayer ngaphansi kwamazinga okushisa aphezulu nezingcindezi, okuthuthukisa kakhulu inqubo ye-CMP ukufana kanye nesivuno.

Ukwethulwa Kwezingxenye Ezihlukahlukene Ze-SiC Ceramics ngokwezifiso

I-Silicon Carbide (SiC) Square Mirror

I-Silicon Carbide (SiC) I-Square Mirror iyingxenye ye-optical enemba kakhulu eyakhiwe nge-silicon carbide ceramic ethuthukisiwe, eklanyelwe ngokukhethekile imishini yokukhiqiza i-semiconductor esezingeni eliphezulu njengemishini ye-lithography. Ifinyelela isisindo esilula kakhulu kanye nokuqina okuphezulu (i-elastic modulus > 400 GPa) ngomklamo wesakhiwo ongasindi (isb, umgodi ongemuva wekhekheba lezinyosi), kuyilapho izinga lokushisa eliphansi kakhulu lokunwetshwa okushisayo (≈4.5×10⁻⁶ liqinisekisa izinga lokushisa eliphansi/⁻⁶) Indawo yesibuko, ngemva kokupholishwa okunembayo, iba ≤1 μm flatness/parallelness, futhi ukumelana kwayo okukhethekile nokugqoka (Mohs hardness 9.5) kwelula impilo yesevisi. Isetshenziswa kakhulu ezindaweni zokusebenza zemishini ye-lithography, izibonisi ze-laser, nezibonakude zasemkhathini lapho ukunemba okuphezulu nokuqina kubaluleke kakhulu.

I-Silicon Carbide (SiC) Imihlahlandlela Yokuntanta komoya

I-Silicon Carbide (SiC) Air Floatation Guides isebenzisa ubuchwepheshe be-aerostatic bearing obungathinteki, lapho igesi ecindezelwe yakha ifilimu yomoya yezinga le-micron (imvamisa engu-3-20μm) ukuze kuzuzwe ukunyakaza okubushelelezi okunganyakazi nokungadlidlizi. Zinikeza ukunemba kokunyakaza kwe-nanometric(ukunemba kokuma okuphindaphindiwe kufika ku-±75nm) kanye nokunemba kwejometri ye-sub-micron(ukuqondisa ±0.1-0.5μm, flatness ≤1μm) , okunikwe amandla ukulawulwa kwempendulo yeluphu evaliwe enezikali ezinembayo zokugezela noma ama-interferometer e-laser. I-core silicon carbide ceramic material (izinketho zifaka i-Coresic® SP/Marvel Sic series) ihlinzeka ngokuqina okuphezulu kakhulu (elastic modulus >400 GPa) , i-ultra-low thermal expansion coefficient (4.0–4.5×10⁻⁶/K, ukuminyana kwe-silicon ephezulu <0%) . Idizayini yayo engasindi (ukuminyana okungu-3.1g/cm³, okwesibili kuphela ku-aluminium) yehlisa inertia enyakazayo, kuyilapho ukumelana nokugqoka okukhethekile (Mohs hardness 9.5) kanye nokuzinza kwe-thermal, kuqinisekisa ukwethembeka kwesikhathi eside ngaphansi kwezimo zesivinini esikhulu (1m/s) kanye nezimo zokusheshisa okuphezulu (4G). Lezi ziqondiso zisetshenziswa kakhulu ku-semiconductor lithography, ukuhlolwa kwe-wafer, kanye nomshini wokunemba okuphezulu.

I-Silicon Carbide (SiC) I-Cross-Beams

I-Silicon Carbide (SiC) I-Cross-Beams iyizinsimbi ezinyakazayo eziklanyelwe imishini ye-semiconductor kanye nezicelo zezimboni ezisezingeni eliphezulu, ezisebenza ngokuyinhloko ukuthwala izigaba ze-wafer futhi ziziqondise emigwaqweni ecacisiwe yesivinini esikhulu, ukunyakaza okunembe kakhulu. Besebenzisa i-silicon carbide ceramic esebenza kahle kakhulu(izinketho zifaka uchungechunge lwe-Coresic® SP noma i-Marvel Sic) kanye nomklamo wesakhiwo ongasindi, bafinyelela isisindo esilula kakhulu ngokuqina okuphezulu (i-elastic modulus>400 GPa), kanye ne-ultra-low coefficient of thermal expansion5×10⁶⁶ nokuphakama okuphezulu ukuminyana (i-porosity <0.1%), iqinisekisa ukuzinza kwe-nanometric ( flatness/parallelism ≤1μm) ngaphansi kwengcindezi eshisayo neyomshini. Izakhiwo zabo ezihlanganisiwe zisekela ukusebenza okushesha kakhulu nokushesha okuphezulu (isb, 1m/s, 4G), okuzenza zilungele imishini ye-lithography, amasistimu okuhlola ama-wafer, kanye nokukhiqizwa okunembayo, okuthuthukisa kakhulu ukunemba kokunyakaza kanye nokusebenza kahle kokuphendula okuguquguqukayo.

I-Silicon Carbide (SiC) Izingxenye Zokunyakaza

I-Silicon Carbide (SiC) Izingxenye Zokunyakaza ziyizingxenye ezibalulekile eziklanyelwe izinhlelo zokunyakaza ze-semiconductor ezinembayo eziphezulu, ezisebenzisa izinto ze-SiC ezixinene kakhulu (isb., i-Coresic® SP noma uchungechunge lwe-Marvel Sic, i-porosity engu-<0.1%) kanye nomklamo wesakhiwo ongasindi ukuze kuzuzwe isisindo esilula kakhulu > esine-Gdufflus engu-40 ephezulu. Nge-ultra-low coefficient of thermal expansion(≈4.5×10⁻⁶/℃), baqinisekisa ukuzinza kwe-nanometric( flatness/parallelism ≤1μm) ngaphansi kokuguquguquka kokushisa. Lezi zakhiwo ezihlanganisiwe zisekela ukusebenza kwejubane eliphezulu nokusheshisa okuphezulu (isb, 1m/s, 4G), okuzenza zilungele imishini ye-lithography, amasistimu okuhlola ama-wafer, kanye nokukhiqizwa okunembayo, okuthuthukisa kakhulu ukunemba kokunyakaza kanye nokusebenza kahle kokuphendula okuguquguqukayo.

I-Silicon Carbide (SiC) I-Optical Path Plate

I-Silicon Carbide (SiC) Optical Path Plate iyinkundla eyisisekelo eklanyelwe amasistimu we-double-optical-path kumishini yokuhlola i-wafer. Ikhiqizwe nge-silicon carbide ceramic esebenza kahle kakhulu, ifinyelela ku-ultra-lightweight (ukuminyana ≈3.1 g/cm³) kanye nokuqina okuphezulu (i-elastic modulus > 400 GPa) ngomklamo wesakhiwo ongasindi, kuyilapho ifaka ukunwetshwa okuphansi okuphansi kwe-thermal. (≈4.5×10⁻⁶/℃) kanye nokuminyana okukhulu (i-porosity <0.1%), iqinisekisa ukuzinza kwe-nanometric (flatness/parallelism ≤0.02mm) ngaphansi kokuguquguquka kwe-thermal nokokusebenza. Ngobukhulu bayo obukhulu obukhulu (900×900mm) kanye nokusebenza okuphelele okuhlukile, inikeza isisekelo sokukhweza esizinzile sesikhathi eside samasistimu okukhanya, okuthuthukisa kakhulu ukunemba nokuthembeka kokuhlolwa. Isetshenziswa kakhulu ku-semiconductor metrology, ukuqondanisa kwe-optical, kanye nezinhlelo zokucabanga ezinembayo eziphezulu.

I-Graphite + Tantalum Carbide Coated Guide Ring

I-Graphite + Tantalum Carbide Coated Guide Ring iyingxenye ebalulekile eklanyelwe ngokukhethekile okokusebenza kwe-silicon carbide (SiC) yokukhula kwekristalu eyodwa. Umsebenzi wayo oyinhloko ukuqondisa ngokunembile ukugeleza kwegesi yezinga eliphezulu lokushisa, ukuqinisekisa ukufana nokuzinza kwezinga lokushisa nezinkambu zokugeleza ngaphakathi kwegumbi lokusabela. Ikhiqizwe kusuka ku-high-purity graphite substrate (ukuhlanzeka >99.99%) embozwe nge-CVD-deposited tantalum carbide (TaC) ungqimba (okuqukethwe ukungcola okunameka <5 ppm), ikhombisa ukuguquguquka kwe-thermal okukhethekile (≈120 W/m·K) ngaphansi kwezinga lokushisa eliphakeme ngokwedlulele 2200°C), ivikela ngempumelelo ukugqwala komhwamuko we-silicon kanye nokucindezela ukusakazeka kokungcola. Ukufana okuphezulu kwe-coating (ukuchezuka <3%, ukumbozwa kwendawo egcwele) kuqinisekisa ukuqondiswa kwegesi okungaguquki nokuthembeka kwesevisi yesikhathi eside, kuthuthukisa kakhulu ikhwalithi kanye nesivuno sokukhula kwekristalu eyodwa ye-SiC.

Silicon Carbide (SiC) Furnace Tube Abstract

Silicon Carbide (SiC) Vertical Furnace Tube

I-Silicon Carbide (SiC) I-Vertical Furnace Tube iyingxenye ebalulekile eklanyelwe imishini yezimboni enezinga eliphezulu lokushisa, isebenza ngokuyinhloko njengeshubhu lokuvikela langaphandle, ukuze kuqinisekiswe ukusatshalaliswa kokushisa okufanayo ngaphakathi kwesithando somlilo ngaphansi komkhathi womoya, ngezinga lokushisa elivamile elisebenza cishe elingu-1200 ° C. Ikhiqizwe ngobuchwepheshe bokubumba obuhlanganisiwe bokuphrinta be-3D, inokuqukethwe okuyisisekelo kokungcola <300 ppm, futhi ingafakwa ngokuzithandela nge-CVD silicon carbide coating (ukungcola okuhlanganisa <5 ppm). Ukuhlanganisa izinga eliphezulu lokushisa (≈20 W/m·K) kanye nokuzinza kokushaqeka okushisayo (ukumelana nama-gradients ashisayo>800°C), kusetshenziswa kabanzi ezinqubweni zokushisa okuphezulu njengokwelashwa kokushisa kwe-semiconductor, i-photovoltaic material sintering, kanye nokukhiqizwa okunembayo kwe-ceramic, okuthuthukisa kakhulu umshini wokusebenza isikhathi eside.

I-Silicon Carbide (SiC) Evundlile yesithando somlilo

I-Silicon Carbide (SiC) Horizontal Furnace Tube iyingxenye ewumongo eyenzelwe izinqubo ezisezingeni eliphezulu, esebenza njengeshubhu lenqubo elisebenza emkhathini oqukethe umoya-mpilo (igesi esebenzayo), i-nitrogen (igesi evikelayo), kanye ne-trace hydrogen chloride, enezinga lokushisa elivamile elisebenza cishe elingu-1250°C. Ikhiqizwe ngobuchwepheshe bokubumba obuhlanganisiwe bokuphrinta be-3D, inokuqukethwe okuyisisekelo kokungcola <300 ppm, futhi ingafakwa ngokuzithandela nge-CVD silicon carbide coating (ukungcola okuhlanganisa <5 ppm). Ihlanganisa ukuguquguquka okuphezulu kokushisa(≈20 W/m·K) kanye nokuzinza kokushaqeka okushisayo okukhethekile(ukumelana nama-gradient ashisayo >800°C), ilungele ukufakwa kwe-semiconductor okudingayo okufana ne-oxidation, ukusabalalisa, nokufakwa kwefilimu emincane, iqinisekisa izimo zesakhiwo, ubuqotho obuqinile, umkhathi oqinile ngaphansi komkhathi.

Isingeniso Se-SiC Ceramic Fork Arms

Ukukhiqiza I-Semiconductor

Ekwenziweni kwe-wafer ye-semiconductor, izingalo zemfoloko ye-SiC ceramic zisetshenziselwa ngokuyinhloko ukudlulisa nokubeka amawafa, avame ukutholakala ku:

Izinto Ezisetshenziswayo Zokucubungula I-wafer: Okufana namakhasethi ayilucwecwana nezikebhe ezicutshungulwayo, ezisebenza ngokuzinzile endaweni enezinga lokushisa eliphezulu kanye nenqubo yokubola.
Imishini ye-Lithography: Isetshenziswa ezicini ezinembayo njengezigaba, imihlahlandlela, nezingalo zerobhothi, lapho ukuqina kwayo okuphezulu kanye nokuguqulwa kokushisa okuphansi kuqinisekisa ukunemba kokunyakaza kwezinga le-nanometer.
Izinqubo ze-Etching and Diffusion: Isebenza njengamathreyi e-ICP etching kanye nezingxenye zezinqubo zokusabalalisa ze-semiconductor, ukuhlanzeka kwawo okuphezulu nokumelana nokugqwala kuvimbela ukungcola emakamelweni enqubo.

I-Industrial Automation kanye namaRobhothi

Izingalo zemfoloko ze-SiC Ceramic ziyizingxenye ezibalulekile kumarobhothi ezimboni asebenza kahle kanye nemishini ezenzakalelayo:

I-Robotic End Effecters: Isetshenziselwa ukuphatha, ukuhlanganisa, kanye nokusebenza okunembayo. Izakhiwo zazo ezingasindi (ukuminyana ~3.21 g/cm³) zithuthukisa isivinini nokusebenza kahle kwerobhothi, kuyilapho ukuqina kwazo okuphezulu (ukuqina kwe-Vickers ~2500) kuqinisekisa ukumelana nokugqokwa okukhethekile.
Imigqa Yokukhiqiza Ezenzakalelayo: Ezimeni ezidinga ukuphathwa kwemvamisa ephezulu, ukunemba okuphezulu (isb., izindawo zokugcina izimpahla ze-e-commerce, isitoreji sefekthri), izingalo zemfoloko ze-SiC ziqinisekisa ukusebenza okuzinzile kwesikhathi eside.

I-Aerospace kanye namandla amasha

Ezimweni ezimbi kakhulu, izingalo zemfoloko ye-SiC ceramic ziphakamisa ukumelana kwazo nezinga lokushisa eliphezulu, ukumelana nokugqwala, nokumelana nokushaqeka okushisayo:

I-Aerospace: Isetshenziswa ezingxenyeni ezibalulekile zemikhumbi-mkhathi nama-drones, lapho izakhiwo zazo ezingasindi kanye namandla aphezulu zisiza ukunciphisa isisindo futhi zithuthukise ukusebenza.
Amandla Amasha: Asetshenziswa kumishini yokukhiqiza embonini ye-photovoltaic (isb., izithando zomlilo) kanye nanjengezingxenye zesakhiwo esinembayo ekukhiqizeni ibhethri ye-lithium-ion.

High-Temperature Industrial Processing

Izingalo zemfoloko ze-ceramic ze-SiC zingamelana namazinga okushisa angaphezu kuka-1600 ° C, zizenze zilungele:

I-Metallurgy, Ceramics, ne-Glass Industries: Isetshenziswa kuma-manipulators ethempelesha ephezulu, ama-setter plate, namapuleti aphushayo.
Amandla eNuclear: Ngenxa yokumelana kwawo nemisebe, afanele izingxenye ezithile kuma-reactors enuzi.

Imishini Yezokwelapha

Emkhakheni wezokwelapha, izingalo zemfoloko ye-SiC ceramic zisetshenziselwa ikakhulukazi:

Amarobhothi Ezokwelapha Nezinsimbi Zokuhlinza: Abalulekile ngenxa yokuhambisana kwawo nemvelo, ukumelana nokugqwala, nokuzinza ezindaweni zokuvala inzalo.

SiC Coating Uhlolojikelele

I-SiC coating iyingqimba ye-silicon carbide eminyene futhi engagugi elungiswe ngenqubo yeChemical Vapor Deposition (CVD). Lokhu kunamathela kudlala indima ebalulekile ezinqubweni ze-semiconductor epitaxial ngenxa yokumelana kwayo nokugqwala okuphezulu, ukuzinza okuhle kakhulu kokushisa, kanye nokuhanjiswa kwe-thermal okuvelele (kusukela ku-120–300 W/m·K). Sisebenzisa ubuchwepheshe obuthuthukisiwe be-CVD, sifaka ngokulinganayo ungqimba oluncane lwe-SiC ku-graphite substrate, siqinisekisa ukuhlanzeka okuphezulu kwe-coating kanye nobuqotho besakhiwo.

Ngaphezu kwalokho, abathwali be-SiC-coated bakhombisa amandla akhethekile wemishini nempilo ende yesevisi. Akhiwe ukuze amelane namazinga okushisa aphezulu (akwazi ukusebenza isikhathi eside ngaphezu kuka-1600°C) kanye nezimo zamakhemikhali ezinzima ezivamile zezinqubo zokukhiqiza i-semiconductor. Lokhu kuwenza abe yinketho efanelekile yama-wafers e-GaN epitaxial, ikakhulukazi kuma-high-frequency kanye nezinhlelo zokusebenza zamandla aphezulu njengeziteshi eziyisisekelo ze-5G kanye nezikhulisamandla zamandla ze-RF zangaphambili.

Idatha ye-SiC Coating

Izakhiwo ezijwayelekile	Amayunithi	Amanani
Isakhiwo		I-FCC β isigaba
Ukuqondisa	Isiqephu (%)	111 ekhethwayo
Ukuminyana ngobuningi	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Amandla Okushisa	J·kg-1 ·K-1	640
Ukunwetshwa kwe-Thermal 100–600 °C (212–1112 °F)	10-6K-1	4.5
I-Young's Modulus	I-Gpa (4pt bend, 1300℃)	430
Usayizi Wokusanhlamvu	μm	2~10
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Thermal conductivity	(W/mK)	300

Silicon Carbide Ceramic Structural Parts Uhlolojikelele

Izingxenye zesakhiwo se-silicon carbide ceramic zitholakala ezinhlayiyeni ze-silicon carbide ezihlanganiswe ndawonye ngokufaka i-sintering. Asetshenziswa kakhulu emikhakheni yezimoto, imishini, amakhemikhali, isemiconductor, ubuchwepheshe besikhala, i-microelectronics, kanye nemikhakha yamandla, adlala indima ebalulekile ekusetshenzisweni okuhlukahlukene ngaphakathi kwalezi zimboni. Ngenxa yezakhiwo zazo ezingavamile, izingxenye zesakhiwo se-silicon carbide ceramic seziphenduke into efanelekile ezimweni ezinzima ezihlanganisa izinga lokushisa eliphezulu, ukucindezela okukhulu, ukugqwala, nokuguga, ukuletha ukusebenza okuthembekile nokuphila isikhathi eside ezindaweni zokusebenza eziyinselele.

Lezi zingxenye zidume ngokusebenza kwazo okushisayo kwe-thermal, okusiza ukudluliswa kokushisa okusebenzayo ezinhlelweni ezihlukahlukene zokushisa okuphezulu. Ukumelana nokushaqeka okungokwemvelo kwe-silicon carbide ceramics kubenza bakwazi ukumelana nokushintsha kwezinga lokushisa ngokushesha ngaphandle kokuqhekeka noma ukwehluleka, ukuqinisekisa ukwethembeka kwesikhathi eside ezindaweni ezishisayo ezishisayo.

Ukumelana ne-oxidation okungokwemvelo kwezakhi zesakhiwo se-silicon carbide ceramic kuzenza zifanelekele ukusetshenziswa ezimeni ezichayeke kumazinga okushisa aphezulu kanye nomkhathi we-oxidative, okuqinisekisa ukusebenza okuqhubekayo nokuthembeka.

SiC Seal Izingxenye Uhlolojikelele

Izimpawu ze-SiC ziyinketho ekahle ezindaweni ezinokhahlo (njengokushisa okuphezulu, ukucindezela okuphezulu, imidiya ebolayo, nokugqokwa kwesivinini esikhulu) ngenxa yokuqina kwazo okungavamile, ukumelana nokugqoka, ukumelana nezinga lokushisa eliphezulu (ukumelana nezinga lokushisa elifika ku-1600 ° C noma 2000 ° C), kanye nokumelana nokugqwala. I-thermal conductivity ephezulu yenza kube lula ukunqanyulwa kokushisa okusebenzayo, kuyilapho izakhiwo zazo eziphansi zokungqubuzana kanye nezindawo ezizigcoba ngokwazo ziqinisekisa ukwethembeka kokuvala kanye nempilo ende yesevisi ngaphansi kwezimo zokusebenza ezimbi kakhulu. Lezi zici zenza izimpawu ze-SiC zisetshenziswe kabanzi ezimbonini ezifana namakhemikhali e-petrochemicals, izimayini, ukukhiqizwa kwe-semiconductor, ukuhlanzwa kwamanzi angcolile, namandla, kunciphisa kakhulu izindleko zokulungisa, ukunciphisa isikhathi sokuphumula, kanye nokuthuthukisa ukusebenza kahle nokuphepha kwemishini.

I-SiC Ceramic Plates Kafushane

Amapuleti e-ceramic e-Silicon Carbide (SiC) adume ngobulukhuni bawo obungavamile (ukuqina kwe-Mohs kufika ku-9.5, okwesibili ngemuva kwedayimane), ukuqhutshwa kwe-thermal okuvelele (okudlula kude iningi le-ceramics yokulawula ukushisa okuphumelelayo), kanye nokungangeni kwamakhemikhali okuphawulekayo kanye nokumelana nokushaqeka okushisayo (okumelana nama-acids aqinile, ama-alkali flue). Lezi zakhiwo ziqinisekisa ukusimama kwesakhiwo nokusebenza okuthembekile ezindaweni eziyingozi kakhulu (isb., izinga lokushisa eliphezulu, ukuhuzuka, nokugqwala), kuyilapho kunwetshwa impilo yesevisi futhi kunciphisa izidingo zokunakekela.

Amapuleti e-ceramic e-SiC asetshenziswa kabanzi emikhakheni esebenza kahle kakhulu:

•Ama-Abrasives kanye Namathuluzi Okugaya: Ukusebenzisa ubulukhuni obuphezulu kakhulu bokukhiqiza amasondo okugaya namathuluzi okupholisha, ukuthuthukisa ukunemba nokuqina ezindaweni ezihuquzelayo.

•Izinto Ezenzakalayo: Isebenza njengamalayini esithandweni nezingxenye zomlilo, igcina uzinzo ngaphezu kuka-1600°C ukuze kuthuthukiswe ukusebenza kahle kokushisa nokunciphisa izindleko zokunakekela.

•Imboni ye-semiconductor: Isebenza njengama-substrates emishini kagesi enamandla amakhulu (isb., ama-power diode nama-amplifiers e-RF), esekela ukusebenza kwe-high-voltage kanye nezinga lokushisa eliphezulu ukuze kukhuliswe ukwethembeka nokusebenza kahle kwamandla.

•I-Casting and Smelting: Ukushintsha izinto ezivamile ekucutshungulweni kwensimbi ukuze kuqinisekiswe ukudluliswa kokushisa okuphumelelayo kanye nokumelana nokugqwala kwamakhemikhali, ukuthuthukisa ikhwalithi ye-metallurgical kanye nokusebenza kahle kwezindleko.

I-SiC Wafer Boat Abstract

Izikebhe ze-XKH SiC ze-ceramic ziletha ukuzinza okuphezulu kwe-thermal, ukungabi namandla kwamakhemikhali, ubunjiniyela obunembayo, kanye nokusebenza kahle kwezomnotho, ukuhlinzeka ngesixazululo esisebenza kahle senkampani yenethiwekhi yokukhiqiza i-semiconductor. Zithuthukisa kakhulu ukuphepha kokuphatha ama-wafer, ukuhlanzeka, nokusebenza kahle kokukhiqiza, okuzenza zibe izingxenye ezibalulekile ekwenziweni kwe-wafer ethuthukisiwe.

Izikebhe ze-SiC Ceramic Izici:

•I-Thermal Stability & Mechanical Stability: Yenziwe nge-silicon carbide (SiC) ceramic, imelana nezinga lokushisa elingaphezu kuka-1600°C, kuyilapho igcina ubuqotho besakhiwo ngaphansi kokuhamba ngebhayisikili okushisayo. I-coefficient yayo yokwandisa okushisayo ephansi inciphisa ukuguquguquka nokuqhekeka, iqinisekisa ukunemba nokuphepha kwe-wafer phakathi nokuphathwa.

•I-High Purity & Chemical Resistance: Ihlanganiswe ne-ultra-high-purity SiC, ibonisa ukumelana okuqinile nama-asidi, ama-alkali, nama-plasma abolayo. Indawo engenzi lutho ivimbela ukungcoliswa nokucwiliswa kwe-ion, ivikele ukuhlanzeka kwe-wafer futhi ithuthukise isivuno sedivayisi.

•Ubunjiniyela obunembayo nokwenza ngendlela oyifisayo: Kwenziwe ngaphansi kokubekezelela okuqinile ukuze kusekelwe osayizi abahlukahlukene be-wafer (isb., 100mm kuya ku-300mm), enikeza ukucaba okuphakeme, ubukhulu besikhala obufanayo, nokuvikelwa konqenqema. Imiklamo engenziwa ngendlela oyifisayo ivumelana nezisetshenziswa ezizenzakalelayo nezidingo zamathuluzi athile.

•Isikhathi eside sokuphila nokusebenza kahle kwezindleko: Uma kuqhathaniswa nezinto ezisetshenziswayo zendabuko (isb., i-quartz, i-alumina), i-SiC ceramic inikeza amandla okusebenza aphakeme, ukuqina kokuphuka, nokumelana nokushaqeka okushisayo, okunweba kakhulu impilo yesevisi, kunciphisa ukushintshwa kwemvamisa, nokwehlisa izindleko eziphelele zobunikazi kuyilapho ithuthukisa ukukhiqizwa kokukhiqiza.

Izicelo zezikebhe ze-SiC ceramic:

Izikebhe ze-ceramic ze-SiC zisetshenziswa kabanzi kuzinqubo ze-semiconductor zangaphambili, kufaka phakathi:

•Izinqubo Zokumisa: Njenge-LPCVD (Low-Pressure Chemical Vapor Deposition) kanye ne-PECVD (I-Plasma-Enhanced Chemical Vapor Deposition).

•Ukwelashwa Kwezinga Lokushisa Okuphezulu: Kufaka i-oxidation eshisayo, i-annealing, ukusabalalisa, nokufakwa kwe-ion.

•Izinqubo Zokumanzisa Nokuhlanza: Ukuhlanzwa kwe-wafer kanye nezigaba zokuphatha amakhemikhali.

Ihambisana nazo zombili izindawo zenqubo ye-atmospheric kanye ne-vacuum,

zilungele izindwangu ezifuna ukunciphisa ubungozi bokungcoliswa kanye nokwenza ngcono ukusebenza kahle kokukhiqiza.

Amapharamitha we-SiC Wafer Boat:

Izakhiwo Zobuchwepheshe
Inkomba	Iyunithi	Inani
Igama Lempahla		Ukusabela Sintered Silicon Carbide	Pressureless Sintered Silicon Carbide	I-Recrystallized Silicon Carbide
Ukwakheka		I-RBSiC	I-SSiC	I-R-SiC
Ukuminyana kwenqwaba	g/cm3	3	3.15 ± 0.03	2.60-2.70
Amandla e-Flexural	I-MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Amandla Acindezelayo	I-MPa (kpsi)	1120(158)	3970(560)	> 600
Ukuqina	Knoop	2700	2800	/
Breaking Tenacity	I-MPa m1/2	4.5	4	/
I-Thermal Conductivity	W/mk	95	120	23
I-Coefficient of Thermal Expansion	10^-6.1/°C	5	4	4.7
Ukushisa Okuthize	I-Joule/g 0k	0.8	0.67	/
Izinga lokushisa eliphezulu emoyeni	℃	1200	1500	1600
I-Elastic Modulus	I-Gpa	360	410	240

I-SiC Ceramics Isibonisi Sezingxenye Ezihlukahlukene Zezifiso

I-SiC Ceramic Membrane

I-SiC Ceramic membrane iyisixazululo esithuthukisiwe sokuhlunga esakhiwe nge-silicon carbide ehlanzekile, esinohlaka oluqinile lwezendlalelo ezintathu (ungqimba olusekelayo, ungqimba olushintshayo, nolwelwesi oluhlukanisayo) olwakhiwe ngezinqubo zokushisa ezishisa kakhulu. Lo mklamo uqinisekisa amandla emishini akhethekile, ukusatshalaliswa kosayizi wembotshana okunembile, nokuqina okuvelele. Ihamba phambili ezinhlelweni ezihlukene zezimboni ngokuhlukanisa kahle, ukugxilisa, nokuhlanza uketshezi. Ukusetshenziswa okubalulekile kuhlanganisa ukuhlanzwa kwamanzi namanzi angcolile (ukususa okuqinile okumisiwe, amagciwane, nezinto ezingcolisa umzimba), ukucubungula ukudla neziphuzo (ukucacisa nokugxilisa amajusi, ubisi, noketshezi oluvutshiwe), ukusebenza kwezemithi kanye ne-biotechnology (ukuhlanza ama-biofluid nezimaphakathi), ukucutshungulwa kwamakhemikhali (ukuhlunga uketshezi olubolayo kanye nokukhiqizwa kwamanzi okubola kanye nokukhiqiza uketshezi lwamafutha), ukususwa okungcolile).

Amapayipi e-SiC

Amashubhu e-SiC (i-silicon carbide) ayizingxenye ze-ceramic ezisebenza kahle kakhulu eziklanyelwe amasistimu wesithando somlilo se-semiconductor, akhiqizwe nge-silicon carbide enohlamvu oluphezulu olucolisekile ngokusebenzisa amasu athuthukisiwe okucwilisa. Zibonisa ukuguquguquka okumangalisayo okushisayo, ukuzinza kwezinga lokushisa eliphezulu (okungaphezu kuka-1600°C), kanye nokumelana nokugqwala kwamakhemikhali. I-coefficient yabo ephansi yokwandisa okushisayo namandla aphezulu emishini kuqinisekisa ukuzinza kwe-dimensional ngaphansi kokuhamba ngebhayisikili okushisayo, kunciphisa ngokuphumelelayo ukuguquguquka kwengcindezi yokushisa nokuguga. Amashubhu e-SiC afanele amafurnase okusabalalisa, iziko le-oxidation, nezinhlelo ze-LPCVD/PECVD, avumela ukusatshalaliswa kwezinga lokushisa okufanayo kanye nezimo zenqubo ezinzile ukuze kuncishiswe ukukhubazeka kwe-wafer futhi kuthuthukiswe ukufana kokufakwa kwefilimu emincane. Ukwengeza, isakhiwo esiminyene, esingenayo i-porous kanye nokungangeni kwamakhemikhali kwe-SiC ukumelana nokuguguleka kwamagesi asebenzayo afana ne-oxygen, i-hydrogen, ne-ammonia, okunweba impilo yesevisi nokuqinisekisa ukuhlanzeka kwenqubo. Amashubhu e-SiC angenziwa ngokwezifiso ngosayizi nokuqina kodonga, ngokunemba kwemishini kufinyelela indawo yangaphakathi ebushelelezi kanye nokugxila okuphezulu ukusekela ukugeleza kwe-laminar kanye namaphrofayili okushisa alinganayo. Ukupholisha okungaphezulu noma izinketho zokumboza ziphinde zehlise ukukhiqizwa kwezinhlayiya futhi kuthuthukise ukumelana nokugqwala, kuhlangatshezwane nezidingo eziqinile zokwenziwa kwe-semiconductor ukuze kube nokunemba nokuthembeka.

I-SiC Ceramic Cantilever Paddle

Idizayini ye-monolithic yama-SiC cantilever blades ithuthukisa kakhulu ukuqina kwemishini kanye nokufana okushisayo ngenkathi isusa amalunga namaphuzu abuthakathaka ajwayelekile ezintweni eziyinhlanganisela. Ubuso bazo bucoliseke ngokunemba kuze kube sekugcineni kwesibuko, kunciphisa ukukhiqizwa kwezinhlayiya futhi kuhlangatshezwane nezindinganiso zegumbi lokuhlanza. I-inertia yamakhemikhali engokwemvelo ye-SiC ivimbela ukukhipha umoya, ukugqwala, kanye nenqubo yokungcoliswa ezindaweni ezisebenzayo (isb., umoya-mpilo, isitimu), iqinisekisa ukuzinza nokuthembeka ezinqubweni zokusabalalisa/zokuxutshwa kwe-oxidation. Naphezu kokuhamba ngebhayisikili okushisayo okusheshayo, i-SiC igcina ubuqotho besakhiwo, inweba impilo yesevisi futhi yehlisa isikhathi sokulungisa. Imvelo engasindi ye-SiC inika amandla ukuphendula okushisayo okusheshayo, ukusheshisa amazinga okushisa/okupholisa kanye nokwenza ngcono ukukhiqiza nokusebenza kahle kwamandla. Lawa ma-blades atholakala ngosayizi owenzeka ngokwezifiso (ahambisana nama-wafers angu-100mm kuya ku-300mm+) futhi azivumelanisa nemiklamo ehlukahlukene yesithando somlilo, eletha ukusebenza okungaguquki kuzo zombili izinqubo ze-semiconductor yangaphambili nangemuva.

Isingeniso se-Alumina Vacuum Chuck

Ama-vacuum chucks e-Al₂O₃ angamathuluzi abalulekile ekukhiqizeni ama-semiconductor, ahlinzeka ngosekelo oluzinzile nolunembile kuzo zonke izinqubo eziningi:•Thinning: Inikeza ukusekela okufanayo ngesikhathi sokuncishiswa kwe-wafer, iqinisekisa ukuncishiswa kwe-substrate enembayo ephezulu ukuze kuthuthukiswe ukushiswa kokushisa kwe-chip nokusebenza kwedivayisi.
•I-Dicing: Ihlinzeka nge-adsorption evikelekile ngesikhathi sokudayela kwe-wafer, inciphisa izingozi zomonakalo kanye nokuqinisekisa ukusikeka okuhlanzekile kwama-chips ngamanye.
•Ukuhlanza: Indawo yayo ebushelelezi, ehambisanayo yokukhangisa yenza kube lula ukususwa kokungcola ngaphandle kokulimaza amawafa phakathi nezinqubo zokuhlanza.
•Transporting: Iletha ukwesekwa okuthembekile nokuvikelekile ngesikhathi sokuphatha iwafa kanye nokuthuthwa, inciphisa izingozi zokulimala nokungcoliswa.

I-Al₂O₃ Izici eziyinhloko ze-Vacuum Chuck:

1.Uniform Micro-Porous Ceramic Technology
•Isebenzisa i-nano-powder ukuze idale izimbotshana ezisatshalaliswe ngokulinganayo nezixhumene, okuholela ekuqineni okuphezulu kanye nesakhiwo esiminyene ngokulinganayo sokusekelwa okungaguquki nokuthembekile.

2.Izakhiwo Zezinto Ezingavamile
-Yakhiwe nge-alumina ehlanzekile engu-99.99% (Al₂O₃), ibonisa:
•Thermal Properties: Ukumelana nokushisa okuphezulu kanye ne-thermal conductivity enhle kakhulu, ifanele indawo ye-semiconductor yezinga lokushisa eliphezulu.
•Izakhiwo Zemishini: Amandla aphezulu nobulukhuni kuqinisekisa ukuqina, ukumelana nokuguga, nempilo ende yesevisi.
•Izinzuzo Ezengeziwe: Ukufakwa kukagesi okuphezulu nokumelana nokugqwala, okuvumelana nezimo ezihlukahlukene zokukhiqiza.

3.I-Superior Flatness kanye ne-Parallelism•Iqinisekisa ukuphathwa kwe-wafer okunembe futhi okuzinzile nokucaba okuphezulu nokuhambisana, inciphisa ubungozi bokulimala futhi iqinisekise imiphumela engaguquki yokucubungula. Ukungena komoya kahle kanye namandla okukhangisa afanayo athuthukisa ukuthembeka kokusebenza.

I-Al₂O₃ vacuum chuck ihlanganisa ubuchwepheshe be-micro-porous obuthuthukisiwe, izakhiwo zezinto ezibonakalayo ezihlukile, kanye nokunemba okuphezulu, ukusekela izinqubo ezibucayi ze-semiconductor, iqinisekisa ukusebenza kahle, ukwethembeka, kanye nokulawulwa kokungcola kuzo zonke izigaba zokucwilisa, ukudayiza, ukuhlanza nezokuthutha.

I-Alumina Robot Arm ne-Alumina Ceramic End Effector Kafushane

I-Alumina (Al₂O₃) izingalo zerobhothi ze-ceramic ziyizingxenye ezibalulekile zokuphatha i-wafer ekukhiqizeni i-semiconductor. Bathintana ngokuqondile nama-wafers futhi banesibopho sokudluliswa okunembayo kanye nokubeka endaweni enesidingo esifana ne-vacuum noma izimo zezinga lokushisa eliphezulu. Inani lawo eliyisisekelo lilele ekuqinisekiseni ukuphepha kwe-wafer, ukuvimbela ukungcoliswa, kanye nokwenza ngcono ukusebenza kahle kwemishini kanye nesivuno ngokusebenzisa izakhiwo zempahla ezihlukile.

i-ejwayelekile-i-wafer-transfer-robot_230226_副本

Isici Dimension	Incazelo Eningiliziwe
Mechanical Properties	I-alumina enobumsulwa obuphezulu (isb, >99%) ihlinzeka ngobulukhuni obuphezulu (ukuqina kwe-Mohs kufika ku-9) namandla aguqukayo (afika ku-250-500 MPa), iqinisekisa ukumelana nokugqoka nokugwema ukuguga, ngaleyo ndlela inwebe impilo yesevisi.
I-Electrical Insulation	Ukumelana nezinga lokushisa kwegumbi kufika ku-10¹⁵ Ω·cm namandla okwahlukanisa angu-15 kV/mm kuvikela ngempumelelo ukukhishwa kwe-electrostatic (ESD), ukuvikela amawafa azwelayo ekuphazamisekeni nasekulimeni kukagesi.
I-Thermal Stability	Iphuzu elincibilikayo elifinyelela ku-2050°C—livumela ukumelana nezinqubo zezinga lokushisa eliphezulu (isb., i-RTA, i-CVD) ekukhiqizeni ama-semiconductor. I-coefficient yokwandisa okushisayo ephansi inciphisa ukungqubuzana futhi igcine ukuqina kohlangothi ngaphansi kokushisa.
I-Chemical Inertness	Ingangeni kuma-asidi amaningi, ama-alkali, amagesi okucubungula, nama-ejenti okuhlanza, ukuvimbela ukungcoliswa kwezinhlayiyana noma ukukhishwa kwe-ion yensimbi. Lokhu kuqinisekisa indawo yokukhiqiza ehlanzeke kakhulu futhi kugwema ukungcoliswa kwendawo eyiluphala.
Ezinye Izinzuzo	Ubuchwepheshe bokucubungula abavuthiwe bunikeza ukusebenza kahle kwezindleko; izindawo ezingaphezulu zingapholishwa ngokunembayo zibe rough, kuqhubeke nokunciphisa ubungozi bokukhiqiza izinhlayiya.

Izingalo zerobhothi ze-alumina ze-ceramic zisetshenziswa ngokuyinhloko ezinqubweni zokukhiqiza ze-semiconductor zangaphambili, okuhlanganisa:

•Ukuphatha i-wafer and Positioning: Dlulisa ngokuphepha nangokunembile futhi ubeke amawafa (isb, osayizi abangu-100mm ukuya ku-300mm+) endaweni engenalutho noma ehlanzekile kakhulu yegesi engasebenzi, enciphisa umonakalo kanye nezingozi zokungcoliswa.

•High-Temperature Processes: Okufana ne-rapid thermal annealing (RTA), chemical vapor deposition (CVD), kanye ne-plasma etching, lapho igcina khona ukuzinza ngaphansi kwamazinga okushisa aphezulu, iqinisekisa ukufana kwenqubo kanye nesivuno.

•I-Automated Wafer Handling Systems: Ihlanganiswe kumarobhothi abamba ama-wafer njengemiphumela yokugcina, ukuze kusebenze ukudluliselwa kwewafa ngokuzenzakalela phakathi kwezinto zokusebenza, kuthuthukise ukusebenza kahle kokukhiqiza.

Isiphetho

I-XKH igxile ku-R&D kanye nokukhiqizwa kwe-silicon carbide (SiC) eyenziwe ngokwezifiso ne-alumina (Al₂O₃) ye-ceramic izingxenye, okuhlanganisa izingalo zerobhothi, ama-cantilever paddles, ama-vacuum chucks, izikebhe eziyisilutshwana, amashubhu esithandweni somlilo, nezinye izingxenye ezisebenza kahle kakhulu, ezinikeza ama-semiconductors, amandla amasha, indawo yokushisa ephansi, kanye ne-ist-aerospace. Sibambelela ekukhiqizeni okunembayo, ukulawulwa kwekhwalithi okuqinile, kanye nokuqanjwa kabusha kwezobuchwepheshe, ukusebenzisa izinqubo ezithuthukisiwe ze-sintering (isb., i-sinteringless sintering, i-reaction sintering) kanye nezindlela zokwenza machining ezinembayo (isb., ukugaya i-CNC, ukupholishwa) ukuze kuqinisekiswe ukumelana nezinga lokushisa okuphezulu okukhethekile, amandla emishini, ukungabi namandla kwamakhemikhali, nokunemba kobukhulu. Sisekela ukwenza ngendlela oyifisayo okusekelwe emidwebeni, enikeza izixazululo ezihambisanayo zobukhulu, umumo, ukuqedwa kwendawo, kanye namabanga wezinto ezibonakalayo ukuze kuhlangatshezwane nezidingo ezithile zamaklayenti. Sizibophezele ekuhlinzekeni ngezingxenye ze-ceramic ezinokwethenjelwa nezisebenzayo zokukhiqiza okuphezulu emhlabeni jikelele, ukuthuthukisa ukusebenza kwemishini nokusebenza kahle kokukhiqiza kumakhasimende ethu.

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