Izindaba Zemboni
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Ukuqonda ama-Semi-Insulation vs. N-Type SiC Wafers ezinhlelo zokusebenza ze-RF
I-Silicon carbide (i-SiC) ivele njengento ebalulekile kuma-elekthronikhi esimanje, ikakhulukazi ekusetshenzisweni okubandakanya amandla aphezulu, imvamisa ephezulu, kanye nezindawo zokushisa okuphezulu. Izakhiwo zayo eziphakeme—njenge-bandgap ebanzi, ukuhanjiswa kokushisa okuphezulu, kanye ne-voltage ephezulu yokuqhekeka—yenza i-SiC ibe yi-ide...Funda kabanzi -
Indlela Yokuthuthukisa Izindleko Zakho Zokuthenga Ama-Wafers E-Silicon Carbide Asezingeni Eliphezulu
Kungani Ama-Silicon Carbide Wafers Ebonakala Ebiza Kakhulu—Nokuthi Kungani Lowo Mbono Ungaphelele Ama-Silicon carbide (SiC) wafers avame ukubonwa njengezinto ezibizayo ngokwemvelo ekukhiqizeni ama-semiconductor anamandla. Nakuba lo mbono ungenasisekelo ngokuphelele, futhi awuphelele. Inselele yangempela akuyona ...Funda kabanzi -
Singanciphisa kanjani i-wafer ibe “encane kakhulu”?
Singayinciphisa kanjani i-wafer ibe “encane kakhulu”? Iyini ngempela i-wafer encane kakhulu? Ububanzi obujwayelekile bokujiya (ama-wafer angu-8″/12″ njengezibonelo) I-wafer ejwayelekile: 600–775 μm I-wafer encane: 150–200 μm I-wafer encane kakhulu: ngaphansi kuka-100 μm I-wafer encane kakhulu: 50 μm, 30 μm, noma ngisho no-10–20 μm Kungani...Funda kabanzi -
Indlela i-SiC ne-GaN eziguqula ngayo ukupakishwa kwe-Power Semiconductor
Imboni ye-power semiconductor ibhekene noshintsho oluguqukayo oluqhutshwa ukwamukelwa okusheshayo kwezinto ze-wide-bandgap (WBG). I-Silicon Carbide (SiC) kanye ne-Gallium Nitride (GaN) zihamba phambili kulolu shintsho, zivumela amadivayisi kagesi esizukulwane esilandelayo ukuthi asebenze kahle kakhulu futhi ashintshe ngokushesha...Funda kabanzi -
I-FOUP Ayikho kanye neFomu Eligcwele le-FOUP: Umhlahlandlela Ophelele Wonjiniyela Be-Semiconductor
I-FOUP imele i-Front-Opening Unified Pod, isitsha esijwayelekile esisetshenziswa ekukhiqizweni kwe-semiconductor yesimanje ukuthutha nokugcina ama-wafer ngokuphephile. Njengoba ubukhulu be-wafer bukhuphukile, nezinqubo zokukhiqiza seziba bucayi kakhulu, ukugcina indawo ehlanzekile nelawulwayo yama-wafer kuye kwabangela...Funda kabanzi -
Kusukela ku-Silicon kuya ku-Silicon Carbide: Indlela Izinto Ezisebenza Ngokushisa Okuphezulu Ezichaza Kabusha Ngayo Ukupakisha Ama-Chip
I-Silicon ibilokhu iyitshe lesisekelo lobuchwepheshe be-semiconductor. Kodwa-ke, njengoba ubuningi be-transistor bukhula futhi ama-processor esimanje kanye namamojula wamandla ekhiqiza ubuningi bamandla obuphakeme kakhulu, izinto ezisekelwe ku-silicon zibhekene nemikhawulo eyisisekelo ekuphathweni kokushisa kanye nokuzinza kwemishini. I-Silicon c...Funda kabanzi -
Kungani Ama-Wafer e-SiC Ahlanzekile Kakhulu Ebaluleke Kakhulu Kuma-Elektroniki Amandla Esizukulwane Esilandelayo
1. Ukusuka ku-Silicon kuya ku-Silicon Carbide: Ushintsho Lwepharadayimu Ku-Power Electronics Sekuyiminyaka engaphezu kwengxenye yekhulu, i-silicon ibilokhu ingumgogodla we-electronics yamandla. Kodwa-ke, njengoba izimoto zikagesi, izinhlelo zamandla avuselelekayo, izikhungo zedatha ze-AI, kanye namapulatifomu ezindiza eqhubekela phambili kuma-voltage aphezulu, izinga lokushisa eliphakeme...Funda kabanzi -
Umehluko Phakathi kwe-4H-SiC ne-6H-SiC: Yisiphi isisekelo esidingwa yiphrojekthi yakho?
I-Silicon carbide (i-SiC) ayiseyona nje i-semiconductor esezingeni eliphezulu. Izakhiwo zayo zikagesi nezokushisa ezihlukile ziyenza ibe yinto ebalulekile kuma-electronics kagesi esizukulwane esilandelayo, ama-EV inverters, amadivayisi e-RF, kanye nezinhlelo zokusebenza zemvamisa ephezulu. Phakathi kwama-polytype e-SiC, i-4H-SiC kanye ne-6H-SiC zibusa imakethe—kodwa...Funda kabanzi -
Yini Eyenza I-Sapphire Substrate Esezingeni Eliphezulu Yezicelo Ze-Semiconductor?
Isingeniso Izisekelo zesafire zidlala indima eyisisekelo ekukhiqizweni kwe-semiconductor yesimanje, ikakhulukazi kuma-optoelectronics kanye nezinhlelo zokusebenza zamadivayisi e-wide-bandgap. Njengendlela eyodwa yekristalu ye-aluminium oxide (Al₂O₃), i-safire inikeza inhlanganisela eyingqayizivele yokuqina komshini, ukuzinza kokushisa...Funda kabanzi -
I-Silicon Carbide Epitaxy: Izimiso Zenqubo, Ukulawula Ubukhulu, kanye Nezinselele Zokukhubazeka
I-silicon carbide (SiC) epitaxy isenhliziyweni yenguquko yamandla kagesi yesimanje. Kusukela ezimotweni zikagesi kuya ezinhlelweni zamandla avuselelekayo kanye nama-drive ezimboni ane-voltage ephezulu, ukusebenza kanye nokuthembeka kwamadivayisi e-SiC kuncike kakhulu ekwakhiweni kwesekethe kunokuthi kwenzekani ngesikhathi se-microme...Funda kabanzi -
Ukusuka ku-Substrate kuya ku-Power Converter: Indima Ebalulekile ye-Silicon Carbide Ezinhlelweni Zamandla Ezithuthukisiwe
Kuma-elekthronikhi anamandla anamuhla, isisekelo sedivayisi sivame ukunquma amakhono esistimu yonke. Izisekelo ze-silicon carbide (SiC) ziye zavela njengezinto eziguqulayo, okwenza kube nesizukulwane esisha sezinhlelo zamandla ezinamandla aphezulu, amaza aphezulu, kanye nezonga amandla. Kusukela ku-athomu...Funda kabanzi -
Amandla Okukhula kwe-Silicon Carbide Kubuchwepheshe Obusha
I-Silicon carbide (i-SiC) iyinto esezingeni eliphezulu ye-semiconductor eye yavela kancane kancane njengengxenye ebalulekile ekuthuthukisweni kobuchwepheshe besimanje. Izakhiwo zayo ezihlukile—njengokushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye namakhono okuphatha amandla aphezulu—yenza ibe yinto ethandwayo...Funda kabanzi