Ukukhulisa ungqimba olwengeziwe lwama-athomu e-silicon ku-substrate ye-silicon wafer kunezinzuzo eziningana:
Ezinqubweni ze-silicon ze-CMOS, ukukhula kwe-epitaxial (EPI) ku-substrate ye-wafer kuyisinyathelo esibalulekile senqubo.
1. Ukuthuthukisa ikhwalithi yekristalu
Amaphutha okuqala kanye nokungcola kwe-substrate: Ngesikhathi senqubo yokukhiqiza, i-wafer substrate ingaba namaphutha athile kanye nokungcola. Ukukhula kwesendlalelo se-epitaxial kungakhiqiza isendlalelo se-silicon se-monocrystalline sekhwalithi ephezulu esinokugxila okuphansi kwamaphutha kanye nokungcola kwi-substrate, okubalulekile ekwakhiweni kwedivayisi okulandelayo.
Isakhiwo sekristalu esifanayo: Ukukhula kwe-Epitaxial kuqinisekisa isakhiwo sekristalu esifanayo, kunciphisa umthelela wemingcele yokusanhlamvu kanye nokukhubazeka ezintweni ezingaphansi komhlaba, ngaleyo ndlela kuthuthukiswe ikhwalithi yekristalu iyonke ye-wafer.
2, ukuthuthukisa ukusebenza kukagesi.
Ukuthuthukisa izici zedivayisi: Ngokukhulisa ungqimba lwe-epitaxial ku-substrate, ukuhlushwa kwe-doping kanye nohlobo lwe-silicon kungalawulwa ngokunembile, kwenze ngcono ukusebenza kukagesi kwedivayisi. Isibonelo, i-doping yongqimba lwe-epitaxial ingalungiswa kahle ukuze ilawule i-threshold voltage yama-MOSFET kanye neminye imingcele kagesi.
Ukunciphisa ukuvuza kwamanje: Isendlalelo se-epitaxial sekhwalithi ephezulu sinobukhulu obuphansi bokuhluleka, okusiza ukunciphisa ukuvuza kwamanje kumadivayisi, ngaleyo ndlela kuthuthukiswe ukusebenza kwedivayisi nokuthembeka kwayo.
3, ukuthuthukisa ukusebenza kukagesi.
Ukunciphisa Usayizi Wesici: Kuma-node amancane enqubo (njenge-7nm, 5nm), usayizi wesici samadivayisi uyaqhubeka nokuncipha, kudinga izinto ezicwengekile kakhulu nezisezingeni eliphezulu. Ubuchwepheshe bokukhula kwe-Epitaxial bungahlangabezana nalezi zidingo, busekele ukukhiqizwa kwamasekethe ahlanganisiwe asebenza kahle kakhulu futhi anobuningi obukhulu.
Ukuthuthukisa I-Voltage Yokuphuka: Izingqimba ze-Epitaxial zingaklanywa ngama-voltage aphezulu okuphuka, okubalulekile ekukhiqizeni amadivayisi anamandla aphezulu kanye nanamandla aphezulu. Isibonelo, kumadivayisi kagesi, izingqimba ze-epitaxial zingathuthukisa i-voltage yokuphuka kwedivayisi, kwandise ububanzi bokusebenza obuphephile.
4, Ukuhambisana Kwezinqubo kanye Nezakhiwo Ezinezingqimba Eziningi
Izakhiwo Zezingqimba Eziningi: Ubuchwepheshe bokukhula kwe-Epitaxial buvumela ukukhula kwezakhiwo zezingqimba eziningi kuma-substrate, ngezingqimba ezahlukene ezinezinga lokugxila kwe-doping elihlukahlukene kanye nezinhlobo. Lokhu kuzuzisa kakhulu ekukhiqizeni amadivayisi e-CMOS ayinkimbinkimbi kanye nokuvumela ukuhlanganiswa kwezinhlangothi ezintathu.
Ukuhambisana: Inqubo yokukhula kwe-epitaxial ihambisana kakhulu nezinqubo zokukhiqiza ze-CMOS ezikhona, okwenza kube lula ukuhlanganisa emisebenzini yokukhiqiza yamanje ngaphandle kwesidingo sokuguqulwa okukhulu emigqeni yenqubo.
Isifinyezo: Ukusetshenziswa kokukhula kwe-epitaxial ezinqubweni ze-silicon ze-CMOS kuhlose kakhulu ukuthuthukisa ikhwalithi yekristalu ye-wafer, ukwenza ngcono ukusebenza kukagesi kwedivayisi, ukusekela ama-node enqubo athuthukile, kanye nokuhlangabezana nezidingo zokukhiqizwa kwesekethe ehlanganisiwe esebenza kahle kakhulu kanye ne-high-density. Ubuchwepheshe bokukhula kwe-epitaxial buvumela ukulawulwa okunembile kokusetshenziswa kwe-doping kanye nesakhiwo sezinto, kuthuthukiswe ukusebenza kanye nokuthembeka kwamadivayisi.
Isikhathi sokuthunyelwe: Okthoba-16-2024