Ukukhulisa ungqimba olwengeziwe lwama-athomu e-silicon ku-silicon wafer substrate kunezinzuzo ezimbalwa:
Ezinqubweni ze-silicon ye-CMOS, ukukhula kwe-epitaxial (EPI) ku-wafer substrate kuyisinyathelo esibalulekile senqubo.
1. Ukwenza ngcono ikhwalithi yekristalu
Ukukhubazeka kokuqala kwe-substrate nokungcola: Phakathi nenqubo yokukhiqiza, i-wafer substrate ingaba nokukhubazeka nokungcola okuthile. Ukukhula kongqimba lwe-epitaxial kungaveza ungqimba lwe-silicon yekhwalithi ephezulu enezinga eliphansi lamaphutha nokungcola ku-substrate, okubalulekile ekwakhiweni kwedivayisi okulandelayo.
Isakhiwo sekristalu esilinganayo: Ukukhula kwe-Epitaxial kuqinisekisa ukwakheka kwekristalu okufana kakhulu, kunciphisa umthelela wemingcele yokusanhlamvu kanye nokukhubazeka kokusebenza kwe-substrate, ngaleyo ndlela kuthuthukisa ikhwalithi ye-crystal iyonke ye-wafer.
2, thuthukisa ukusebenza kukagesi.
Ukuthuthukisa izici zedivayisi: Ngokukhulisa ungqimba lwe-epitaxial ku-substrate, ukugxiliswa kwe-doping nohlobo lwe-silicon kungalawulwa ngokunembile, kuthuthukise ukusebenza kukagesi kwedivayisi. Isibonelo, i-doping ye-epitaxial layer ingalungiswa kahle ukuze kulawulwe i-threshold voltage yama-MOSFETs namanye amapharamitha kagesi.
Ukunciphisa ukuvuza kwamanje: Isendlalelo se-epitaxial sekhwalithi ephezulu sinokuminyana okunesici esiphansi, esiza ukwehlisa ukuvuza kwamanje kumadivayisi, ngaleyo ndlela kuthuthukiswe ukusebenza kwedivayisi nokuthembeka.
3, thuthukisa ukusebenza kukagesi.
Ukunciphisa Usayizi Wesici: Kumanodi enqubo amancane (afana ne-7nm, 5nm), usayizi wesici samadivayisi uyaqhubeka nokuncipha, okudinga izinto ezicwengekile nezisezingeni eliphezulu. Ubuchwepheshe bokukhula kwe-Epitaxial bungahlangabezana nalezi zidingo, busekele ukukhiqizwa kwamasekethe ahlanganisiwe asebenza kahle kakhulu futhi anomthamo omkhulu.
Ukuthuthukisa I-Breakdown Voltage: Izendlalelo ze-Epitaxial zingaklanywa ngama-voltage aphezulu okuphuka, okubalulekile ekukhiqizeni amandla aphezulu kanye namadivayisi anamandla kagesi. Isibonelo, kumadivayisi kagesi, izendlalelo ze-epitaxial zingathuthukisa i-voltage yokuwohloka kwedivayisi, zikhuphule ububanzi bokusebenza obuphephile.
4, Ukuhambisana Kwenqubo kanye Nezakhiwo Ze-Multilayer
I-Multilayer Structures: Ubuchwepheshe bokukhula kwe-Epitaxial buvumela ukukhula kwezakhiwo ze-multilayer kuma-substrates, anezendlalelo ezihlukene ezinokugxila kwe-doping nezinhlobo ezihlukahlukene. Lokhu kuzuzisa kakhulu ekukhiqizeni amadivaysi e-CMOS ayinkimbinkimbi futhi kuvumela ukuhlanganisa okunezinhlangothi ezintathu.
Ukuhambisana: Inqubo yokukhula kwe-epitaxial ihambisana kakhulu nezinqubo zokukhiqiza ze-CMOS ezikhona, okwenza kube lula ukuhlanganisa ukuhamba komsebenzi wamanje wokukhiqiza ngaphandle kwesidingo sokuguqulwa okubalulekile emigqeni yenqubo.
Isifinyezo: Ukusetshenziswa kokukhula kwe-epitaxial ezinqubweni ze-silicon ye-CMOS kuhloswe ngokuyinhloko ukuthuthukisa ikhwalithi ye-wafer crystal, ukwenza ngcono ukusebenza kukagesi wedivayisi, ukusekela ama-process node athuthukisiwe, kanye nokuhlangabezana nezidingo zokukhiqiza okudidiyelwe kokusebenza okuphezulu nokuminyana okuphezulu. Ubuchwepheshe bokukhula kwe-Epitaxial buvumela ukulawula okunembile kwe-doping kanye nesakhiwo, ukuthuthukisa ukusebenza okuphelele nokuthembeka kwamadivayisi.
Isikhathi sokuthumela: Oct-16-2024