Ukuthuthukiswa komkhakha wasekhaya we-GaN kusheshisiwe

Ukwamukelwa kwedivayisi yamandla e-Gallium nitride (GaN) kukhula kakhulu, okuholwa abathengisi bama-electronics abathengi baseShayina, futhi imakethe yamadivayisi we-GaN kagesi kulindeleke ukuthi ifinyelele ku-$ 2 billion ngo-2027, isuka ku-$ 126 million ngo-2021. Njengamanje, umkhakha we-electronics abathengi umshayeli oyinhloko wokwamukelwa kwe-gallium nitride, lapho i-ejensi ibikezela ukuthi isidingo samandla e-GaN emakethe ye-elekthronikhi yabathengi sizokhula sisuka ku-$79.6 million ngo-2021 siye ku-$964.7 million ngo-2027, okuyizinga lokukhula elihlanganisiwe lonyaka ngamaphesenti angama-52.

Amadivaysi e-GaN anokuqina okuphezulu, ukumelana nokushisa okuhle, ukuqhutshwa kukagesi kanye nokukhipha ukushisa. Uma kuqhathaniswa nezingxenye ze-silicon, amadivayisi we-GaN anomthamo wama-electron aphezulu kanye nokuhamba. Amadivayisi e-GaN asetshenziswa kakhulu emakethe ye-elekthronikhi yabathengi ukushaja okusheshayo kanye nezinhlelo zokuxhumana kanye ne-broadband.

Abangaphakathi embonini bathi yize imakethe ye-elekthronikhi yabathengi ihlala ibuthakathaka, umbono wamadivayisi we-GaN usakhanya. Emakethe ye-GaN, abakhiqizi baseShayina babeke endaweni engaphansi, i-epitaxial, idizayini kanye nezindawo zokukhiqiza izinkontileka. Abakhiqizi ababili ababaluleke kakhulu ku-GaN ecosystem yaseChina yi-Innoseco kanye ne-Xiamen SAN 'an IC.

Ezinye izinkampani zaseShayina emkhakheni we-GaN zifaka umkhiqizi we-substrate u-Suzhou Nawei Technology Co., LTD., Dongguan Zhonggan Semiconductor Technology Co., LTD., umphakeli we-epitaxy u-Suzhou Jingzhan Semiconductor Co., LTD., Jiangsu Nenghua Microelectronics Technology Development Co., LTD. , kanye ne-Chengdu Haiwei Huaxin Technology Co., LTD.

I-Suzhou Nawei Technology izibophezele ocwaningweni nasekuthuthukisweni nasekuthuthukisweni kwezimboni ze-gallium nitride (GaN) i-single crystal substrate, into esemqoka eyinhloko ye-semiconductor yesizukulwane sesithathu. Ngemuva kweminyaka eyi-10 yemizamo, i-Nawei Technology iye yaqaphela ukukhiqizwa kwe-2-inch gallium nitride single crystal substrate, yaqeda ukuthuthukiswa kobuchwepheshe bonjiniyela bemikhiqizo engu-4-intshi, futhi yaphulwa ngobuchwepheshe obuyinhloko be-6-intshi. Manje iyona kuphela e-China futhi ingezinye ezimbalwa emhlabeni ezingahlinzeka ngemikhiqizo yekristalu eyodwa engu-2-inch gallium nitride ngobuningi. I-Gallium nitride product performance index ihamba phambili emhlabeni. Eminyakeni emi-3 ezayo, sizogxila ekuguquleni inzuzo yokuqala yobuchwepheshe ibe inzuzo yemakethe yomhlaba wonke.

Njengoba ubuchwepheshe be-GaN bukhula, ukusetshenziswa kwayo kuzokhula kusuka emikhiqizweni yokushaja okusheshayo yezinto zikagesi ezithengwayo kuye ekunikezeni amandla ku-PCS, amaseva kanye ne-TVS. Azophinde asetshenziswe kakhulu kumashaja ezimoto kanye nama-converter ezimotweni zikagesi.


Isikhathi sokuthumela: Apr-18-2023