Amawafa e-SOI (Silicon-On-Insulator).zimelela okokusebenza okukhethekile kwe-semiconductor okunongqimba lwe-silicon mncane kakhulu olwakhiwe phezu kongqimba lwe-oxide evikelayo. Lesi sakhiwo sesemishi esiyingqayizivele siletha izithuthukisi zokusebenza ezibalulekile zamadivayisi we-semiconductor.
Ukubunjwa Kwesakhiwo:
Isendlalelo Sedivayisi (Isilikoni Esiphezulu):
Ubukhulu obusuka kuma-nanometer ambalwa kuye kuma-micrometer, busebenza njengesendlalelo esisebenzayo sokwenziwa kwe-transistor.
Isendlalelo se-Oxide Engcwatshiwe (IBHOKISI):
Isendlalelo sokuvikela i-silicon dioxide (ubukhulu obungu-0.05-15μm) esihlukanisa ngogesi isendlalelo sedivayisi ku-substrate.
Isisekelo se-Substrate:
I-silicon eyinqwaba (ugqinsi luka-100-500μm) ihlinzeka ngokusekela komshini.
Ngokobuchwepheshe benqubo yokulungiselela, imizila yenqubo evamile yamawafa we-silicon e-SOI ingahlukaniswa ngokuthi: I-SIMOX (ubuchwepheshe bokuhlukaniswa komjovo we-oxygen), i-BESOI (ubuchwepheshe bokunciphisa i-bonding), kanye ne-Smart Cut (ubuchwepheshe bokuhlubula obuhlakaniphile).
I-SIMOX (Ubuchwepheshe bokuhlukaniswa komjovo we-oksijini) yindlela ebandakanya ukujova ama-ion omoya-mpilo aphezulu ku-silicon wafers ukuze kwakheke ungqimba olushunyekiwe lwe-silicon dioxide, ebese lufakwa ngaphansi kwezinga lokushisa eliphezulu ukuze kulungiswe amaphutha e-lattice. Umnyombo umjovo we-ion oxygen oqondile ukuze wenze ungqimba lwe-oksijini olugqitshiwe.
I-BESOI (ubuchwepheshe be-Bonding Thinning) ihlanganisa ukuhlanganisa ama-wafer amabili e-silicon bese unciphisa eyodwa yawo ngokugaya ngomshini kanye nokuhlanganisa amakhemikhali ukuze kwakhiwe isakhiwo se-SOI. Umongo usekuhlanganiseni nasekuncipheni.
I-Smart Cut (ubuchwepheshe be-Intelligent Exfoliation) yakha ungqimba lwe-exfoliation ngomjovo we-hydrogen ion. Ngemuva kokubopha, ukwelashwa kokushisa kuyenziwa ukuze kukhishwe isicwecwana se-silicon eceleni kwesendlalelo se-hydrogen ion, kwakhiwe ungqimba lwe-silicon oluncane kakhulu. Umnyombo ukukhumula umjovo we-hydrogen.
Njengamanje, kunobunye ubuchwepheshe obaziwa nge-SIMBOND (ubuchwepheshe bokufaka umjovo we-oksijini), obakhiwe nguXinao. Eqinisweni, iwumzila ohlanganisa ukuhlukaniswa komjovo komoyampilo kanye nobuchwepheshe bokubopha. Kulo mzila wezobuchwepheshe, i-oxygen ejovwe isetshenziswa njengesendlalelo sesithiyo esinciphisayo, futhi ungqimba lwangempela lwe-oksijini olugqitshiwe luwungqimba lwe-oxidation olushisayo. Ngakho-ke, ngesikhathi esifanayo ithuthukisa imingcele efana nokufana kwe-silicon ephezulu kanye nekhwalithi yongqimba lwe-oxygen engcwatshwe.
Ama-wafer we-silicon e-SOI akhiqizwa imizila yobuchwepheshe ehlukene anemingcele yokusebenza ehlukene futhi afanele izimo ezihlukene zohlelo lokusebenza.
Okulandelayo yithebula elifingqiwe lezinzuzo eziyinhloko zokusebenza kwamawafer we-silicon e-SOI, ahlanganiswe nezici zawo zobuchwepheshe kanye nezimo ezingokoqobo zohlelo lokusebenza. Uma kuqhathaniswa ne-silicon yobuningi bendabuko, i-SOI inezinzuzo ezibalulekile ekulinganiseni kwejubane nokusetshenziswa kwamandla. (PS: Ukusebenza kwe-22nm FD-SOI kuseduze nalokho kwe-FinFET, futhi izindleko zehliswa ngo-30%.)
| Inzuzo Yokusebenza | Isimiso Sobuchwepheshe | Ukubonakaliswa Okuqondile | Izimo Zokusebenza Ezijwayelekile |
| I-Low Parasitic Capacitance | Isendlalelo se-insulating (BOX) sivimba ukuhlangana kweshaja phakathi kwedivayisi ne-substrate | Isivinini sokushintsha sikhuphuke ngo-15% -30%, ukusetshenziswa kwamandla kwehle ngo-20% -50% | 5G RF, High-frequency zokuxhumana chips |
| Ukuvuza Kwehlisiwe Kwamanje | Isendlalelo esivikelayo sicindezela izindlela zamanje zokuvuza | Ukuvuza kwamanje kwehliswe ngo->90%, impilo yebhethri enwetshiwe | Imishini ye-IoT, i-Wearable electronics |
| Ukuqina Kwemisebe Okuthuthukisiwe | Isendlalelo esivikelayo sivimba ukunqwabelana kweshaja ebangelwa yimisebe | Ukubekezelela imisebe kube ngcono ngo-3-5x, kwehliswe ukucasuka komcimbi owodwa | Imikhumbi-mkhathi, imishini yemboni yeNyukliya |
| Ukulawula Umphumela Wesiteshi Esifushane | Ingqimba ye-silicon ezacile inciphisa ukuphazamiseka kwensimu kagesi phakathi kokudonsa kanye nomthombo | Ukuzinza kwe-threshold voltage okuthuthukisiwe, ukuthambekela kwe-subthreshold okuthuthukisiwe | Ama-chip we-node logic athuthukile (<14nm) |
| Ukuphathwa Kwezifudumezi Okuthuthukisiwe | Isendlalelo se-insulating sinciphisa ukuhlangana kwe-thermal conduction | Ukuqoqwa kokushisa okungaphansi ngo-30%, izinga lokushisa eliphansi le-15-25°C lokusebenza eliphansi | I-3D ICs, i-Automotive electronics |
| I-High-Frequency Optimization | Kwehlisiwe amandla e-parasitic kanye nokuhamba okuthuthukisiwe kwenkampani yenethiwekhi | Ukubambezeleka okuphansi okungu-20%, kusekela ukucubungula isignali engu-30GHz | mmWave ukuxhumana, Satellite comm chips |
| Kwenyuswa Ukuguquguquka Komklamo | Ayikho i-doping edingekayo, isekela ukuchema emuva | 13% -20% izinyathelo ezimbalwa zenqubo, 40% ukuminyana okuphezulu kokuhlanganisa | Ama-IC wesignali exubile, Izinzwa |
| I-Latch-up Immunity | Isendlalelo esivalelayo sihlukanisa ama-junctions e-PN angama-parasitic | I-Latch-up threshold yamanje ikhuphuke yafinyelela ku->100mA | Amadivayisi anamandla kagesi aphezulu |
Ukufingqa, izinzuzo eziyinhloko ze-SOI yilezi: igijima ngokushesha futhi inamandla kakhulu.
Ngenxa yalezi zici zokusebenza ze-SOI, inezinhlelo zokusebenza ezibanzi emikhakheni edinga ukusebenza okuhle kakhulu kwemvamisa nokusebenza kokusetshenziswa kwamandla.
Njengoba kukhonjisiwe ngezansi, ngokusekelwe enanini lezinkambu zohlelo lokusebenza ezihambisana ne-SOI, kungabonakala ukuthi i-RF kanye namadivayisi kagesi enza ingxenye enkulu yemakethe ye-SOI.
| Inkambu yohlelo lokusebenza | Ukwabelana Kwemakethe |
| I-RF-SOI (Radio Frequency) | 45% |
| Amandla e-SOI | 30% |
| I-FD-SOI (Iqedwe Ngokugcwele) | 15% |
| I-Optical SOI | 8% |
| Inzwa ye-SOI | 2% |
Ngokukhula kwezimakethe ezinjengokuxhumana kweselula nokushayela okuzenzakalelayo, ama-wafers we-SOI silicon nawo kulindeleke ukuthi agcine izinga elithile lokukhula.
I-XKH, njengomsunguli oholayo kubuchwepheshe bewafer be-Silicon-On-Insulator (SOI), iletha izixazululo ezibanzi ze-SOI kusuka ku-R&D kuya ekukhiqizweni kwevolumu kusetshenziswa izinqubo zokukhiqiza ezihamba phambili embonini. Iphothifoliyo yethu ephelele ihlanganisa ama-wafers e-SOI angu-200mm/300mm ahlanganisa i-RF-SOI, i-Power-SOI kanye nezinhlobonhlobo ze-FD-SOI, ezinokulawula okuqinile kwekhwalithi okuqinisekisa ukungaguquguquki okukhethekile (ukufana kokuqina ngaphakathi ±1.5%). Sinikeza izixazululo ezenziwe ngokwezifiso ezinogqinsi lwe-oxide (BOX) egqitshiwe kusukela ku-50nm kuya ku-1.5μm kanye nokucaciswa okuhlukahlukene kokumelana nokumelana nezidingo ezithile. Ngokusebenzisa iminyaka engu-15 yobungcweti bobuchwepheshe kanye nochungechunge oluqinile lokuhlinzeka emhlabeni wonke, sihlinzeka ngokuthembekile ngezinto zokwakha ze-SOI zekhwalithi ephezulu kubakhiqizi bezinga eliphezulu emhlabeni wonke, okuvumela ukusungulwa kwe-chip esezingeni eliphezulu kwezokuxhumana kwe-5G, ugesi wezimoto, kanye nezinhlelo zokusebenza zobuhlakani bokwenziwa.
XKH'ama-wafers e-SOI:
Isikhathi sokuthumela: Apr-24-2025