Ama-wafer e-SOI (Silicon-On-Insulator)imelela izinto ezikhethekile ze-semiconductor ezinesendlalelo se-silicon esincanyana kakhulu esakhiwe phezu kwesendlalelo se-oxide esivikelayo. Lesi sakhiwo se-sandwich esiyingqayizivele sinikeza ukuthuthukiswa kokusebenza okuphawulekayo kwamadivayisi e-semiconductor.
Ukwakheka Kwesakhiwo:
Isendlalelo Sedivayisi (I-Silicon Ephezulu):
Ubukhulu busukela kuma-nanometer amaningana kuya kuma-micrometer, okusebenza njengesendlalelo esisebenzayo sokwenza ama-transistor.
Isendlalelo se-Oxide Esingcwatshwe (IBHOKISI):
Isendlalelo sokuvikela i-silicon dioxide (ubukhulu obungu-0.05-15μm) esihlukanisa ngogesi isendlalelo sedivayisi kusuka ku-substrate.
Isisekelo Esiyisisekelo:
I-silicon enkulu (ubukhulu obuyi-100-500μm) inikeza ukwesekwa kwemishini.
Ngokusho kobuchwepheshe benqubo yokulungiselela, izindlela ezijwayelekile zenqubo yama-wafer e-silicon e-SOI zingahlukaniswa kanje: i-SIMOX (ubuchwepheshe bokuhlukaniswa komjovo we-oxygen), i-BESOI (ubuchwepheshe bokunciphisa izibopho), kanye ne-Smart Cut (ubuchwepheshe bokuhlubula obuhlakaniphile).
I-SIMOX (ubuchwepheshe bokuhlukaniswa komjovo we-oxygen) iyindlela ehilela ukufaka ama-ion e-oxygen anamandla aphezulu kuma-silicon wafers ukuze kwakheke ungqimba olufakwe ku-silicon dioxide, olube selufakwa ekufakweni kokushisa okuphezulu ukuze kulungiswe amaphutha e-lattice. Ingqikithi iwukufaka umoya-mpilo ngqo kuma-ion ukuze kwakheke umoya-mpilo ongqimbeni olumboziwe.
I-BESOI (ubuchwepheshe be-Bonding Thinning) ihilela ukubopha ama-wafer amabili e-silicon bese incipha enye yawo ngokugaya ngomshini kanye nokusika ngamakhemikhali ukuze kwakheke isakhiwo se-SOI. Ingqikithi ilele ekubopheni nasekuncipheni.
I-Smart Cut (ubuchwepheshe be-Intelligent Exfoliation) yakha ungqimba lokukhuculula ngokusebenzisa umjovo we-hydrogen ion. Ngemva kokubopha, ukwelashwa kokushisa kwenziwa ukuze kukhucululwe i-silicon wafer eceleni kongqimba lwe-hydrogen ion, kwakhiwe ungqimba lwe-silicon oluncane kakhulu. Ingqikithi iwukukhuculula umjovo we-hydrogen.
Njengamanje, kukhona obunye ubuchwepheshe obaziwa ngokuthi i-SIMBOND (ubuchwepheshe bokubopha i-oxygen injection), obasungulwa yi-Xinao. Eqinisweni, kuyindlela ehlanganisa ukuhlukaniswa kwe-oxygen injection kanye nobuchwepheshe bokubopha. Kulo mzila wobuchwepheshe, i-oxygen efakiwe isetshenziswa njengengqimba yokuvimbela ukuncipha, kanti ungqimba lwe-oxygen olufihliwe lwangempela luyingqimba yokushiswa kokushisa. Ngakho-ke, ngesikhathi esifanayo ithuthukisa imingcele efana nokufana kwe-silicon ephezulu kanye nekhwalithi yongqimba lwe-oxygen olufihliwe.
Ama-wafer e-silicon e-SOI akhiqizwa ngezindlela ezahlukene zobuchwepheshe anemingcele yokusebenza ehlukene futhi afanelekela izimo ezahlukene zokusetshenziswa.
Okulandelayo yithebula elifingqiwe lezinzuzo zokusebenza okuyinhloko kwama-wafer e-silicon e-SOI, kuhlanganiswe nezici zawo zobuchwepheshe kanye nezimo zokusetshenziswa zangempela. Uma kuqhathaniswa ne-silicon enkulu yendabuko, i-SOI inezinzuzo ezibalulekile ekulinganisweni kwesivinini kanye nokusetshenziswa kwamandla. (PS: Ukusebenza kwe-22nm FD-SOI kuseduze nokwe-FinFET, futhi izindleko zincishiswa ngo-30%.)
| Inzuzo Yokusebenza | Isimiso Sobuchwepheshe | Ukubonakaliswa Okuqondile | Izimo Ezijwayelekile Zokusebenza |
| Amandla Aphansi Okubangela Izifo Ezibangelwa Yizinambuzane | Isendlalelo sokufaka umswakama (BOX) sivimba ukuxhumanisa ukushaja phakathi kwedivayisi ne-substrate | Ijubane lokushintsha likhuphuke ngo-15%-30%, ukusetshenziswa kwamandla kuncishiswe ngo-20%-50% | Ama-chip okuxhumana asebenzisa imvamisa ephezulu angu-5G RF |
| Ukuncipha Kokuvuza Kwamanje | Isendlalelo sokuvikela sivimbela izindlela zamanje zokuvuza | Ukuvuza kwamandla kuncishiswe ngo->90%, impilo yebhethri ende | Amadivayisi e-IoT, ama-elekthronikhi agqokekayo |
| Ukuqina Kwemisebe Okuthuthukisiwe | Isendlalelo sokuvikela sivimba ukuqongelela kweshaja okubangelwa imisebe | Ukubekezelela imisebe kuthuthukise izikhathi ezingu-3-5, kwanciphisa ukwehla kwezehlakalo ezi-1 | Imikhumbi-mkhathi, imishini yemboni yeNyukliya |
| Ukulawulwa Komphumela Wesiteshi Esifushane | Isendlalelo esincane se-silicon sinciphisa ukuphazamiseka kwensimu kagesi phakathi komsele kanye nomthombo | Ukuqina kwe-voltage yomkhawulo okuthuthukisiwe, ukuthambekela kwe-subthreshold okulungiselelwe kahle | Ama-chip e-logic e-node athuthukisiwe (<14nm) |
| Ukuphathwa Okuthuthukisiwe Kokushisa | Isendlalelo sokufaka umswakama sinciphisa ukuhlanganiswa kokushisa | Ukuqongelela kokushisa okungaphansi kuka-30%, izinga lokushisa lokusebenza eliphansi lika-15-25°C | Ama-IC e-3D, ama-elekthronikhi ezimoto |
| Ukuthuthukiswa Kwemvamisa Ephakeme | Ukunciphisa amandla okusebenzisa izimuncagazi kanye nokuhamba okuthuthukisiwe kwenethiwekhi | Ukulibaziseka okuphansi okungu-20%, kusekela ukucutshungulwa kwesignali okungu->30GHz | Ukuxhumana kwe-mmWave, ama-chip e-satellite comm |
| Ukuguquguquka Komklamo Okwandisiwe | Akukho ukusetshenziswa kwezidakamizwa emzimbeni okudingekayo, kusekela ukuthambekela emhlane | Izinyathelo zenqubo ezingaphansi ngo-13%-20%, ubuningi bokuhlanganiswa obuphezulu ngo-40% | Ama-IC esignali exubile, Izinzwa |
| Ukungavikeleki Kokuzivikela Okuhlanganisiwe | Isendlalelo sokuvikela sihlukanisa izixhumo ze-PN ezibangelwa yizinambuzane | Umkhawulo wamanje we-latch-up ukhuphuke wafika ku->100mA | Amadivayisi wamandla aphezulu |
Ngamafuphi, izinzuzo eziyinhloko ze-SOI yilezi: isebenza ngokushesha futhi inamandla okusebenzisa kahle.
Ngenxa yalezi zici zokusebenza ze-SOI, inezinhlelo zokusebenza eziningi emikhakheni edinga ukusebenza kahle kakhulu kwemvamisa kanye nokusebenza kokusetshenziswa kwamandla.
Njengoba kuboniswe ngezansi, ngokusekelwe engxenyeni yezinkambu zohlelo lokusebenza ezihambisana ne-SOI, kungabonakala ukuthi i-RF namadivayisi kagesi abangela iningi lemakethe ye-SOI.
| Insimu Yesicelo | Isabelo Semakethe |
| I-RF-SOI (Imvamisa Yomsakazo) | 45% |
| Amandla e-SOI | 30% |
| I-FD-SOI (Ephelele Ngokugcwele) | 15% |
| I-Optical SOI | 8% |
| I-SOI yenzwa | 2% |
Ngokukhula kwezimakethe ezifana nokuxhumana ngeselula kanye nokushayela ngokuzimela, ama-wafer e-silicon e-SOI kulindeleke ukuthi agcine izinga elithile lokukhula.
I-XKH, njengomsunguli ohamba phambili kubuchwepheshe be-wafer be-Silicon-On-Insulator (SOI), inikeza izixazululo ze-SOI eziphelele kusukela ku-R&D kuya ekukhiqizweni kwevolumu kusetshenziswa izinqubo zokukhiqiza ezihamba phambili embonini. Iphothifoliyo yethu ephelele ifaka phakathi ama-wafer e-SOI angu-200mm/300mm ahlanganisa izinhlobo ze-RF-SOI, i-Power-SOI kanye ne-FD-SOI, ngokulawula ikhwalithi okuqinile okuqinisekisa ukuhambisana kokusebenza okuvelele (ukufana kobukhulu ngaphakathi kuka-±1.5%). Sinikeza izixazululo ezenziwe ngokwezifiso ezinobukhulu bengqimba ye-oxide (BOX) esukela ku-50nm kuya ku-1.5μm kanye nemininingwane ehlukahlukene yokumelana ukuze kuhlangatshezwane nezidingo ezithile. Sisebenzisa iminyaka engu-15 yobuchwepheshe kanye nochungechunge lokuhlinzeka oluqinile lomhlaba wonke, sinikeza ngokuthembekile izinto ze-SOI substrate ezisezingeni eliphezulu kubakhiqizi be-semiconductor abaphezulu emhlabeni jikelele, okuvumela ukusungulwa kwe-chip esezingeni eliphezulu kwezokuxhumana kwe-5G, i-electronics yezimoto, kanye nezinhlelo zokusebenza zobuhlakani bokwenziwa.
XKH'Ama-wafer e-SOI:
Isikhathi sokuthunyelwe: Ephreli-24-2025