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Umhlahlandlela Ophelele Wezingcezu Ze-Silicon Carbide Wafers/SiC Wafer

Isifinyezo se-SiC wafer

 Ama-wafer e-silicon carbide (SiC)sezibe yindawo ekhethwayo yama-elekthronikhi anamandla aphezulu, avame kakhulu, kanye nokushisa okuphezulu kuzo zonke izimboni zezimoto, amandla avuselelekayo, kanye nezindiza. Iphothifoliyo yethu ihlanganisa izinhlobo eziyinhloko ze-polytypes kanye nezinhlelo zokusebenzisa i-doping—i-4H (4H-N) ene-nitrogen, i-high-purity semi-insulating (HPSI), i-3C (3C-N) ene-nitrogen, kanye ne-p-type 4H/6H (4H/6H-P)—ezinikezwa ngamamaki amathathu ekhwalithi: i-PRIME (ama-substrates acwebezelwe ngokugcwele, asezingeni ledivayisi), i-DUMMY (efakwe noma engapholishiwe ukuze kuhlolwe inqubo), kanye ne-RESEARCH (izingqimba ze-epi ezenziwe ngokwezifiso kanye namaphrofayili okusebenzisa i-doping e-R&D). Ububanzi be-wafer buhlanganisa ama-2″, 4″, 6″, 8″, kanye no-12″ ukuze kufanelane namathuluzi akudala kanye nezinto ezithuthukisiwe. Siphinde sinikeze ama-monocrystalline boules kanye namakristalu embewu aqondiswe ngqo ukusekela ukukhula kwekristalu ngaphakathi endlini.

Ama-wafer ethu e-4H-N aqukethe ubuningi bokuthwala kusukela ku-1×10¹⁶ kuya ku-1×10¹⁹ cm⁻³ kanye nokuqina okungu-0.01–10 Ω·cm, okuletha ukuhamba kahle kwama-electron kanye nezinsimu zokuqhekeka ezingaphezu kuka-2 MV/cm—afanele ama-diode e-Schottky, ama-MOSFET, kanye nama-JFET. Ama-substrate e-HPSI adlula ukuqina okungu-1×10¹² Ω·cm ngokuqina kwama-micropipe ngaphansi kuka-0.1 cm⁻², okuqinisekisa ukuvuza okuncane kwamadivayisi e-RF kanye nama-microwave. I-Cubic 3C-N, etholakala ngamafomethi angu-2″ kanye no-4″, inika amandla i-heteroepitaxy ku-silicon futhi isekela izinhlelo zokusebenza ezintsha ze-photonic kanye ne-MEMS. Ama-wafer e-P-type 4H/6H-P, afakwe i-aluminium ku-1×10¹⁶–5×10¹⁸ cm⁻³, enza kube lula ukwakheka kwedivayisi okuhambisanayo.

Ama-wafer e-SiC, i-PRIME afakwa ekupholishweni kwamakhemikhali-okwenziwe ngendlela ye-mechanical kuze kube yi-<0.2 nm RMS roughness surface, ukushintshashintsha kobukhulu obuphelele ngaphansi kwe-3 µm, kanye ne-bow <10 µm. Ama-substrates e-DUMMY asheshisa ukuhlolwa kokuhlanganiswa nokupakisha, kuyilapho ama-wafer e-RESEARCH enobukhulu be-epi-layer obungu-2–30 µm kanye ne-doping eyenzelwe wena. Yonke imikhiqizo iqinisekiswe yi-X-ray diffraction (i-rocking curve <30 arcsec) kanye ne-Raman spectroscopy, ngokuhlolwa kukagesi—ukulinganiswa kwe-Hall, i-C–V profile, kanye ne-micropipe scanning—okuqinisekisa ukuhambisana kwe-JEDEC kanye ne-SEMI.

Ama-boule afinyelela ku-150 mm ububanzi akhuliswa nge-PVT kanye ne-CVD enobukhulu bokuhlukana ngaphansi kuka-1×10³ cm⁻² kanye nokubalwa okuphansi kwamapayipi amancane. Amakristalu embewu asikwa ngaphakathi kuka-0.1° we-c-axis ukuqinisekisa ukukhula okuphindaphindwayo kanye nesivuno esikhulu sokusika.

Ngokuhlanganisa izinhlobo eziningi ze-polytypes, izinhlobo zokusebenzisa izidakamizwa, amazinga ekhwalithi, osayizi be-SiC wafer, kanye nokukhiqizwa kwe-boule ne-seed-crystal ngaphakathi endlini, ipulatifomu yethu ye-SiC substrate yenza kube lula uchungechunge lokuhlinzeka futhi isheshise ukuthuthukiswa kwamadivayisi ezimotweni zikagesi, ama-smart grid, kanye nezinhlelo zokusebenza zemvelo ezinzima.

Isifinyezo se-SiC wafer

 Ama-wafer e-silicon carbide (SiC)sezibe yindawo ekhethwayo ye-SiC yama-elekthronikhi anamandla aphezulu, amaza amaningi, kanye nokushisa okuphezulu kuzo zonke izimboni zezimoto, amandla avuselelekayo, kanye nezindiza. Iphothifoliyo yethu ihlanganisa izinhlobo eziyinhloko ze-polytypes kanye nezinhlelo zokusebenzisa i-doping—i-4H (4H-N) ene-nitrogen, i-high-purity semi-insulating (HPSI), i-3C (3C-N) ene-nitrogen, kanye ne-p-type 4H/6H (4H/6H-P)—enikezwa ngamamaki amathathu ekhwalithi: i-SiC waferI-PRIME (izinto ezipholishwe ngokuphelele, ezisezingeni ledivayisi), i-DUMMY (efakwe i-laps noma engapholishiwe ukuze kuvivinywe inqubo), kanye ne-RESEARCH (izendlalelo ze-epi ezenziwe ngokwezifiso kanye namaphrofayili okusebenzisa izidakamizwa ze-R&D). Ububanzi be-SiC Wafer buhlanganisa ama-2″, 4″, 6″, 8″, kanye no-12″ ukuze kufanelane namathuluzi akudala kanye nezinto ezithuthukisiwe. Siphinde sinikeze ama-monocrystalline boule kanye namakristalu embewu aqondiswe ngqo ukusekela ukukhula kwekristalu ngaphakathi endlini.

Ama-wafer ethu e-4H-N SiC aqukethe ubuningi bokuthwala kusukela ku-1×10¹⁶ kuya ku-1×10¹⁹ cm⁻³ kanye nokuqina okungu-0.01–10 Ω·cm, okuletha ukuhamba kahle kwama-electron kanye nezinkambu zokuqhekeka ezingaphezu kuka-2 MV/cm—afanele ama-diode e-Schottky, ama-MOSFET, kanye nama-JFET. Ama-substrate e-HPSI adlula ukuqina okungu-1×10¹² Ω·cm ngokuqina kwama-micropipe ngaphansi kuka-0.1 cm⁻², okuqinisekisa ukuvuza okuncane kwamadivayisi e-RF kanye nama-microwave. I-Cubic 3C-N, etholakala ngamafomethi angu-2″ kanye no-4″, inika amandla i-heteroepitaxy ku-silicon futhi isekela izinhlelo zokusebenza ezintsha ze-photonic kanye ne-MEMS. Ama-wafer e-SiC wafer P-type 4H/6H-P, afakwe i-aluminium ku-1×10¹⁶–5×10¹⁸ cm⁻³, enza kube lula ukwakheka kwedivayisi okuhambisanayo.

Ama-wafer e-SiC wafer e-PRIME afakwa ekupholishweni kwamakhemikhali-okwenziwe ngendlela ye-mechanical kuya ku-<0.2 nm RMS roughness, ukushintshashintsha kobukhulu obuphelele ngaphansi kuka-3 µm, kanye nokugoba <10 µm. Ama-substrates e-DUMMY asheshisa ukuhlolwa kokuhlanganiswa nokupakisha, kuyilapho ama-wafer e-RESEARCH enezici zobukhulu be-epi-layer obungu-2–30 µm kanye ne-doping eyenzelwe wena. Yonke imikhiqizo iqinisekiswe yi-X-ray diffraction (i-rocking curve <30 arcsec) kanye ne-Raman spectroscopy, ngokuhlolwa kukagesi—ukulinganiswa kwe-Hall, i-C–V profile, kanye ne-micropipe scanning—okuqinisekisa ukuhambisana kwe-JEDEC kanye ne-SEMI.

Ama-boule afinyelela ku-150 mm ububanzi akhuliswa nge-PVT kanye ne-CVD enobukhulu bokuhlukana ngaphansi kuka-1×10³ cm⁻² kanye nokubalwa okuphansi kwamapayipi amancane. Amakristalu embewu asikwa ngaphakathi kuka-0.1° we-c-axis ukuqinisekisa ukukhula okuphindaphindwayo kanye nesivuno esikhulu sokusika.

Ngokuhlanganisa izinhlobo eziningi ze-polytypes, izinhlobo zokusebenzisa izidakamizwa, amazinga ekhwalithi, osayizi be-SiC wafer, kanye nokukhiqizwa kwe-boule ne-seed-crystal ngaphakathi endlini, ipulatifomu yethu ye-SiC substrate yenza kube lula uchungechunge lokuhlinzeka futhi isheshise ukuthuthukiswa kwamadivayisi ezimotweni zikagesi, ama-smart grid, kanye nezinhlelo zokusebenza zemvelo ezinzima.

Isithombe sika-SiC wafer

Ishidi ledatha le-SiC wafer yohlobo lwe-4H-N oluyi-6 intshi

 

Ishidi ledatha lama-wafer e-SiC angu-6 intshi
Ipharamitha Ipharamitha Engaphansi Ibanga lika-Z Ibanga le-P Ibanga lika-D
Ububanzi   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Ubukhulu 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ubukhulu 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Ukuqondiswa kwe-Wafer   I-axis engaphandle: 4.0° ukuya ku-<11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI) I-axis engaphandle: 4.0° ukuya ku-<11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI) I-axis engaphandle: 4.0° ukuya ku-<11-20> ±0.5° (4H-N); I-axis engaphandle: <0001> ±0.5° (4H-SI)
Ubuningi be-Micropipe 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Ubuningi be-Micropipe 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ukumelana 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ukumelana 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Ukuqondiswa Okuyisisekelo Okuyisicaba   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Ubude Obuphansi Obuyinhloko 4H‑N 47.5 mm ± 2.0 mm    
Ubude Obuphansi Obuyinhloko 4H‑SI I-Notch    
Ukukhishwa Komphetho     3 mm  
I-Warp/LTV/TTV/Bow   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Ubulukhuni IsiPolish I-Ra ≤ 1 nm    
Ubulukhuni I-CMP I-Ra ≤ 0.2 nm   I-Ra ≤ 0.5 nm
Imifantu Yomphetho   Akukho   Ubude obuhlanganisiwe ≤ 20 mm, obubodwa ≤ 2 mm
Amapuleti e-Hex   Indawo eqongelelekayo ≤ 0.05% Indawo ehlanganisiwe ≤ 0.1% Indawo eqongelelekayo ≤ 1%
Izindawo ze-Polytype   Akukho Indawo eqongelelekayo ≤ 3% Indawo eqongelelekayo ≤ 3%
Ukufakwa kwekhabhoni   Indawo eqongelelekayo ≤ 0.05%   Indawo eqongelelekayo ≤ 3%
Ukuklwebheka Okungaphezulu   Akukho   Ubude obuhlanganisiwe ≤ 1 × ububanzi be-wafer
Ama-Edge Chips   Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.2 mm   Kufika kuma-chips angu-7, ≤ 1 mm ngalinye
I-TSD (Ukususwa Kwesikulufo Sokuxubha)   ≤ 500 cm⁻²   Akukho
I-BPD (Ukuhlukaniswa Kwendiza Eyisisekelo)   ≤ 1000 cm⁻²   Akukho
Ukungcoliswa Komphezulu   Akukho    
Ukupakisha   Ikhasethi ye-multi-wafer noma isitsha se-single wafer Ikhasethi ye-multi-wafer noma isitsha se-single wafer Ikhasethi ye-multi-wafer noma isitsha se-single wafer

Ishidi ledatha le-SiC wafer yohlobo lwe-4H-N oluyi-intshi engu-4

 

Ishidi ledatha le-SiC wafer elingu-4 intshi
Ipharamitha Ukukhiqizwa kwe-MPD okungekho Ibanga Lokukhiqiza Elijwayelekile (Ibanga le-P) Ibanga Eliyimbumbulu (Ibanga D)
Ububanzi 99.5 mm–100.0 mm
Ubukhulu (4H-N) 350 µm±15 µm   350 µm±25 µm
Ubukhulu (4H-Si) 500 µm±15 µm   500 µm±25 µm
Ukuqondiswa kwe-Wafer I-axis evaliwe: 4.0° ibheke ku-<1120> ±0.5° ye-4H-N; I-axis evuliwe: <0001> ±0.5° ye-4H-Si    
Ubuningi be-Micropipe (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Ubuningi be-Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukumelana (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ukumelana (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba   [10-10] ±5.0°  
Ubude Obuphansi Obuyinhloko   32.5 mm ±2.0 mm  
Ubude Besibili Obuyisicaba   18.0 mm ±2.0 mm  
Ukuqondiswa Kwesibili Okuyisicaba   I-silicon ibheke phezulu: 90° CW kusuka ku-prime flat ±5.0°  
Ukukhishwa Komphetho   3 mm  
I-LTV/TTV/I-Bow Warp ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ubulukhuni I-Polish Ra ≤1 nm; I-CMP Ra ≤0.2 nm   I-Ra ≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Akukho Akukho Ubude obuhlanganisiwe ≤10 mm; ubude obubodwa ≤2 mm
Amapuleti e-Hex Ngokukhanya Okuphezulu Indawo eqongelelayo ≤0.05% Indawo eqongelelayo ≤0.05% Indawo ehlanganisiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Akukho   Indawo eqongelelayo ≤3%
Ukufakwa kwekhabhoni ebonakalayo Indawo eqongelelayo ≤0.05%   Indawo eqongelelayo ≤3%
Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho   Ubude obuhlanganisiwe ≤1 ububanzi be-wafer
Ama-Edge Chips Ngokukhanya Okuphezulu Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2 mm   5 kuvunyelwe, ≤1 mm ngayinye
Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho    
Ukuhlukana kwesikulufo sokuhlanganisa intambo ≤500 cm⁻² Akukho  
Ukupakisha Ikhasethi ye-multi-wafer noma isitsha se-single wafer Ikhasethi ye-multi-wafer noma isitsha se-single wafer Ikhasethi ye-multi-wafer noma isitsha se-single wafer

Ishidi ledatha le-wafer ye-SiC yohlobo lwe-HPSI engu-4 intshi

 

Ishidi ledatha le-wafer ye-SiC yohlobo lwe-HPSI engu-4 intshi
Ipharamitha Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) Ibanga Lokukhiqiza Elijwayelekile (Ibanga le-P) Ibanga Eliyimbumbulu (Ibanga D)
Ububanzi   99.5–100.0 mm  
Ubukhulu (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Ukuqondiswa kwe-Wafer I-axis engaphandle: 4.0° ibheke ku-<11-20> ±0.5° ye-4H-N; I-axis engaphandle: <0001> ±0.5° ye-4H-Si
Ubuningi be-Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukumelana (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba (10-10) ±5.0°
Ubude Obuphansi Obuyinhloko 32.5 mm ±2.0 mm
Ubude Besibili Obuyisicaba 18.0 mm ±2.0 mm
Ukuqondiswa Kwesibili Okuyisicaba I-silicon ibheke phezulu: 90° CW kusuka ku-prime flat ±5.0°
Ukukhishwa Komphetho   3 mm  
I-LTV/TTV/I-Bow Warp ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ubulukhuni (ubuso buka-C) IsiPolish I-Ra ≤1 nm  
Ubuso obuqinile (ubuso bukaSi) I-CMP I-Ra ≤0.2 nm I-Ra ≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Akukho   Ubude obuhlanganisiwe ≤10 mm; ubude obubodwa ≤2 mm
Amapuleti e-Hex Ngokukhanya Okuphezulu Indawo eqongelelayo ≤0.05% Indawo eqongelelayo ≤0.05% Indawo ehlanganisiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Akukho   Indawo eqongelelayo ≤3%
Ukufakwa kwekhabhoni ebonakalayo Indawo eqongelelayo ≤0.05%   Indawo eqongelelayo ≤3%
Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho   Ubude obuhlanganisiwe ≤1 ububanzi be-wafer
Ama-Edge Chips Ngokukhanya Okuphezulu Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2 mm   5 kuvunyelwe, ≤1 mm ngayinye
Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho   Akukho
Ukususwa Kwesikulufo Sokuchusha ≤500 cm⁻² Akukho  
Ukupakisha   Ikhasethi ye-multi-wafer noma isitsha se-single wafer  

Ukusetshenziswa kwe-SiC wafer

 

  • Amamojula Amandla e-SiC Wafer ama-EV Inverters
    Ama-MOSFET nama-diode asekelwe ku-SiC wafer akhiwe phezu kwe-substrates ye-SiC wafer esezingeni eliphezulu aletha ukulahlekelwa kokushintsha okuphansi kakhulu. Ngokusebenzisa ubuchwepheshe be-SiC wafer, lawa mamojula wamandla asebenza ngama-voltage aphezulu kanye namazinga okushisa aphezulu, okwenza kube lula ama-inverter okudonsa asebenza kahle kakhulu. Ukuhlanganisa ama-SiC wafer dies ezigabeni zamandla kunciphisa izidingo zokupholisa kanye ne-footprint, okubonisa amandla aphelele okuqamba kwe-SiC wafer.

  • Amadivayisi e-RF avame kakhulu kanye ne-5G ku-SiC Wafer
    Ama-amplifiers e-RF kanye namaswishi enziwe kumapulatifomu e-SiC wafer aqukethe ugesi abonisa ukuhanjiswa kokushisa okuphezulu kanye ne-voltage yokuqhekeka. I-substrate ye-SiC wafer inciphisa ukulahleka kwe-dielectric kuma-frequency e-GHz, kuyilapho amandla ezinto ze-SiC wafer evumela ukusebenza okuzinzile ngaphansi kwezimo zamandla aphezulu, zokushisa okuphezulu—okwenza i-SiC wafer ibe yi-substrate ekhethwayo yeziteshi zesisekelo ze-5G zesizukulwane esilandelayo kanye nezinhlelo ze-radar.

  • Ama-Optoelectronic kanye nama-LED Substrates avela ku-SiC Wafer
    Ama-LED aluhlaza okwesibhakabhaka kanye nama-UV akhuliswe kuma-substrate e-SiC wafer azuza ngokufanisa i-lattice okuhle kakhulu kanye nokushabalalisa ukushisa. Ukusebenzisa i-C-face SiC wafer epholishiwe kuqinisekisa izendlalelo ezifanayo ze-epitaxial, kuyilapho ubulukhuni obungokwemvelo be-SiC wafer buvumela ukuncishiswa kwe-wafer encane kanye nokupakishwa kwedivayisi okuthembekile. Lokhu kwenza i-SiC wafer ibe yipulatifomu esetshenziswa kakhulu yezinhlelo zokusebenza ze-LED ezinamandla aphezulu, ezihlala isikhathi eside.

Imibuzo Nezimpendulo ze-SiC wafer

1. U: Akhiqizwa kanjani ama-wafer e-SiC?


A:

Ama-wafer e-SiC enziweIzinyathelo Ezinemininingwane

  1. Ama-wafer e-SiCUkulungiselela Izinto Ezingavuthiwe

    • Sebenzisa i-powder ye-SiC engu-≥5N-grade (ukungcola okungu-≤1 ppm).
    • Hlunga bese ubhaka kusengaphambili ukuze ususe ama-carbon noma i-nitrogen asele.

  1. I-SiCUkulungiselela I-Seed Crystal

    • Thatha ucezu lwekristalu elilodwa le-4H-SiC, usike eceleni kwendlela ye-〈0001〉 kuze kube ngu-~10 × 10 mm².

    • Ukupholisha okunembile ku-Ra ≤0.1 nm bese uphawula ukuma kwekristalu.

  2. I-SiCUkukhula kwe-PVT (Ukuthuthwa Komusi Ongokoqobo)

    • Faka i-graphite crucible: phansi nge-SiC powder, phezulu nge-seed crystal.

    • Susa ku-10⁻³–10⁻⁵ Torr noma ugcwalise nge-helium ehlanzekile kakhulu ku-1 atm.

    • Shisa indawo yomthombo ku-2100–2300 ℃, gcina indawo yembewu ipholile ku-100–150 ℃.

    • Lawula izinga lokukhula ku-1–5 mm/h ukuze ulinganisele ikhwalithi kanye nomthamo.

  3. I-SiCI-Ingot Annealing

    • Faka i-SiC ingot ekhulile ku-1600–1800 ℃ amahora angu-4–8.

    • Inhloso: ukunciphisa ukucindezeleka kokushisa nokunciphisa ukuminyana kwe-dislocation.

  4. I-SiCUkusikwa kwe-Wafer

    • Sebenzisa isaha lensimbi yedayimane ukuze usike i-ingot ibe ama-wafers anobukhulu obungu-0.5–1 mm.

    • Nciphisa ukudlidliza kanye namandla aseceleni ukuze ugweme ukuqhekeka okuncane.

  5. I-SiCI-WaferUkugaya Nokupholisha

    • Ukugaya okuqinileukususa umonakalo wokusaha (ubulukhuni ~10–30 µm).

    • Ukugaya kahleukuze kufinyelelwe ukuthamba okungu-≤5 µm.

    • Ukupholisha Kwamakhemikhali Nokusebenza (i-CMP)ukufinyelela ekugcineni okufana nesibuko (Ra ≤0.2 nm).

  6. I-SiCI-WaferUkuhlanza Nokuhlola

    • Ukuhlanzwa kwe-Ultrasonickusixazululo se-Piranha (H₂SO₄:H₂O₂), amanzi e-DI, bese kuba yi-IPA.

    • I-XRD/Raman spectroscopyukuqinisekisa uhlobo lwe-polytype (4H, 6H, 3C).

    • I-Interferometryukukala ukuthamba (<5 µm) kanye nokugoba (<20 µm).

    • I-probe enamaphuzu amaneukuhlola ukumelana (isib. HPSI ≥10⁹ Ω·cm).

    • Ukuhlolwa okuphelele kwezinkingangaphansi kwe-microscope yokukhanya okune-polarized kanye ne-scratch tester.

  7. I-SiCI-WaferUkuhlela Nokuhlunga

    • Hlunga ama-wafers ngohlobo lwe-polytype kanye nohlobo lukagesi:

      • Uhlobo lwe-4H-SiC N (4H-N): ukuhlushwa komthwali 10¹⁶–10¹⁸ cm⁻³

      • I-4H-SiC High Purity Semi-Insulating (4H-HPSI): ukumelana ≥10⁹ Ω·cm

      • Uhlobo lwe-6H-SiC N (6H-N)

      • Ezinye: 3C-SiC, P-type, njll.

  8. I-SiCI-WaferUkupakisha Nokuthunyelwa

    • Beka emabhokisini e-wafer ahlanzekile, angenalo uthuli.

    • Faka ilebula ebhokisini ngalinye ngobubanzi, ukujiya, uhlobo lwe-polytype, ibanga lokumelana, kanye nenombolo yebhetshi.

      Ama-wafer e-SiC

2. U: Yiziphi izinzuzo ezibalulekile zama-wafer e-SiC kune-wafer ye-silicon?


A: Uma kuqhathaniswa nama-wafer e-silicon, ama-wafer e-SiC avumela:

  • Ukusebenza kwamandla kagesi aphezulu(>1,200 V) enokumelana okuphansi.

  • Ukuqina kwezinga lokushisa eliphakeme(>300 °C) kanye nokuphathwa okuthuthukisiwe kokushisa.

  • Isivinini sokushintsha esisheshayongokulahlekelwa okuphansi kokushintsha, kunciphisa ukupholisa kwezinga lesistimu kanye nosayizi kuma-power converters.

4. U: Yiziphi izinkinga ezivamile ezithinta ukukhiqizwa nokusebenza kwe-SiC wafer?


A: Amaphutha amakhulu kuma-wafer e-SiC afaka phakathi ama-micropipes, ukuhlukana kwe-basal plane (ama-BPD), kanye nokuklwebheka kobuso. Ama-micropipes angabangela ukwehluleka okukhulu kwedivayisi; ama-BPD andisa ukumelana kwawo ngokuhamba kwesikhathi; kanye nokuklwebheka kobuso kuholela ekuphukeni kwe-wafer noma ukukhula okungekuhle kwe-epitaxial. Ngakho-ke ukuhlolwa okuqinile kanye nokunciphisa amaphutha kubalulekile ukuze kukhuliswe isivuno se-wafer se-SiC.

Isikhathi sokuthunyelwe: Juni-30-2025
Cindezela u-enter ukuze useshe noma u-ESC ukuze uvale