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Umhlahlandlela Ophelele weSilicon Carbide Wafers/SiC wafer

I-SiC wafer's abstract

 Ama-wafers we-silicon carbide (SiC).seziphenduke isizinda esikhethwayo samandla aphezulu, imvamisa ephezulu, kanye nezinga eliphezulu lokushisa kukagesi kuyo yonke imikhakha yezimoto, amandla avuselelekayo, kanye ne-aerospace. Iphothifoliyo yethu ihlanganisa ama-polytypes abalulekile nezikimu ze-doping—i-nitrogen-doped 4H (4H-N), i-high-purity semi-insulating (HPSI), i-nitrogen-doped 3C (3C-N), kanye nohlobo lwe-p 4H/6H (4H/6H-P)—ihlinzekwa ngamamaki amathathu ekhwalithi: PRIME (iphucuziwe ngokugcwele, ipholishiwe ngokugcwele, inqubo ye-DUMMY engafakwanga), i-unplished yedivayisi UCWANINGO (izendlalelo ze-epi zangokwezifiso namaphrofayela e-doping we-R&D). Amadayamitha e-wafer abanzi 2″, 4″, 6″, 8″, kanye no-12″ ukuze afanele womabili amathuluzi wefa nezindwangu ezithuthukisiwe. Siphinde sihlinzeke ngama-monocrystalline boules namakristalu embewu aqondiswe kahle ukuze sisekele ukukhula kwekristalu kwangaphakathi.

Amawafa ethu e-4H-N afaka ukuminyana kwenkampani yenethiwekhi ukusuka ku-1×10¹⁶ ukuya ku-1×10¹⁹ cm⁻³ nokuphikiswa kokungu-0.01–10 Ω·cm, alethela ukuhamba kahle kwama-electron nezinkambu zokuhlukanisa ngaphezu kuka-2 MV/cm—ilungele ama-Schottky diode, nama-JMOSsFET. Ama-substrates e-HPSI adlula u-1×10¹² Ω·cm ukumelana nokuminyana kwe-micropipe ngaphansi kuka-0.1 cm⁻², okuqinisekisa ukuvuza okuncane kwamadivayisi e-RF nawe-microwave. I-Cubic 3C-N, etholakala ngamafomethi angu-2″ kanye no-4″, yenza i-heteroepitaxy ku-silicon futhi isekele izinhlelo zokusebenza ze-photonic ne-MEMS. Amawafa ohlobo lwe-P-4H/6H-P, ahlanganiswe ne-aluminium kuya ku-1×10¹⁶–5×10¹⁸ cm⁻³, asiza ukwakhiwa kwedivayisi okuhambisanayo.

I-SiC wafer, amawafa e-PRIME apholishwa ngamakhemikhali-mechanical kuya ku-<0.2 nm RMS yobulukhuni bobuso, ukuhluka okuphelele kogqinsi ngaphansi kuka-3 µm, kanye nokukhothama <10 µm. Ama-substrates e-DUMMY asheshisa ukuhlolwa kokuhlanganisa nokupakisha, kuyilapho ama-wafers oCWANINGO abonisa ugqinsi lwe-epi-layer engu-2–30 µm kanye ne-doping ye-bespoke. Yonke imikhiqizo iqinisekiswa nge-X-ray diffraction (ijika elinyakazisayo <30 arcsec) kanye ne-Raman spectroscopy, enokuhlolwa kukagesi—Izilinganiso zehholo, iphrofayili ye-C–V, nokuskena kwe-micropipe—okuqinisekisa ukuthi i-JEDEC ne-SEMI iyahambisana.

Amabhowula afika kububanzi obungu-150 mm atshalwa nge-PVT kanye ne-CVD ngokuminyana kokuhlukaniswa okungaphansi kuka-1×10³ cm⁻² kanye nezibalo zamapayipi amancane aphansi. Amakristalu embewu asikwa phakathi kuka-0.1° we-c-eksisi ukuze kuqinisekiswe ukukhula okuphindaphindekayo kanye nesivuno esikhulu sokusika.

Ngokuhlanganisa ama-polytypes amaningi, okuhlukile kwe-doping, amamaki ekhwalithi, osayizi be-SiC wafer, kanye nokukhiqizwa kwangaphakathi kwendlu kanye nokukhiqizwa kwe-seed-crystal, inkundla yethu ye-SiC substrate isakaza amaketanga okuhlinzeka futhi isheshisa ukuthuthukiswa kwedivayisi yezimoto zikagesi, amagridi ahlakaniphile, nezinhlelo zokusebenza zemvelo ezinokhahlo.

I-SiC wafer's abstract

 Ama-wafers we-silicon carbide (SiC).seziphenduke isizinda se-SiC esikhethwayo samandla aphezulu, ama-high-frequency, kanye ne-high-temperature electronics kuyo yonke imikhakha yezimoto, amandla avuselelekayo, kanye ne-aerospace. Iphothifoliyo yethu ihlanganisa ama-polytypes abalulekile nezikimu ze-doping—i-nitrogen-doped 4H (4H-N), i-high-purity semi-insulating (HPSI), i-nitrogen-doped 3C (3C-N), kanye nohlobo lwe-p-4H/6H (4H/6H-P)—inikezwa ngamabanga amathathu ekhwalithi:SiC waferI-PRIME (apholishwe ngokugcwele, ama-substrates ebanga ledivayisi), i-DUMMY (egqitshiwe noma engapholishiwe ukuze kuhlolwe inqubo), kanye NOSESHO (izendlalelo ze-epi zangokwezifiso namaphrofayela e-doping we-R&D). I-SiC Wafer diameters ispan 2″, 4″, 6″, 8″, kanye no-12″ ukuze ifanele womabili amathuluzi wefa nezindwangu ezithuthukisiwe. Siphinde sihlinzeke ngama-monocrystalline boules namakristalu embewu aqondiswe kahle ukuze sisekele ukukhula kwekristalu kwangaphakathi.

Amawafa ethu e-4H-N SiC afaka ukuminyana kwenkampani yenethiwekhi ukusuka ku-1×10¹⁶ ukuya ku-1×10¹⁹ cm⁻³ nokuphikiswa kokungu-0.01–10 Ω·cm, alethela ukuhamba kahle kwama-electron nezinkambu zokuhlukanisa ngaphezu kuka-2 MV/cm—ilungele ama-Schottky diode, ama-MOSFET, nama-JFET. Ama-substrates e-HPSI adlula u-1×10¹² Ω·cm ukumelana nokuminyana kwe-micropipe ngaphansi kuka-0.1 cm⁻², okuqinisekisa ukuvuza okuncane kwamadivayisi e-RF nawe-microwave. I-Cubic 3C-N, etholakala ngamafomethi angu-2″ kanye no-4″, yenza i-heteroepitaxy ku-silicon futhi isekele izinhlelo zokusebenza ze-photonic ne-MEMS. I-SiC wafer P-type 4H/6H-P yama-wafer, ahlanganiswe ne-aluminium kuya ku-1×10¹⁶–5×10¹⁸ cm⁻³, asiza ukwakhiwa kwedivayisi okuhambisanayo.

Amawafa e-SiC PRIME enziwa ukupholishwa ngamakhemikhali-mechanical kuya ku-<0.2 nm RMS yobulukhuni bobuso, ukuhluka okuphelele kogqinsi ngaphansi kuka-3 µm, kanye nokukhothama <10 µm. Ama-substrates e-DUMMY asheshisa ukuhlolwa kokuhlanganisa nokupakisha, kuyilapho ama-wafers oCWANINGO abonisa ugqinsi lwe-epi-layer engu-2–30 µm kanye ne-doping ye-bespoke. Yonke imikhiqizo iqinisekiswa nge-X-ray diffraction (ijika elinyakazisayo <30 arcsec) kanye ne-Raman spectroscopy, enokuhlolwa kukagesi—Izilinganiso zehholo, iphrofayili ye-C–V, nokuskena kwe-micropipe—okuqinisekisa ukuthi i-JEDEC ne-SEMI iyahambisana.

Amabhowula afika kububanzi obungu-150 mm atshalwa nge-PVT kanye ne-CVD ngokuminyana kokuhlukaniswa okungaphansi kuka-1×10³ cm⁻² kanye nezibalo zamapayipi amancane aphansi. Amakristalu embewu asikwa phakathi kuka-0.1° we-c-eksisi ukuze kuqinisekiswe ukukhula okuphindaphindekayo kanye nesivuno esikhulu sokusika.

Ngokuhlanganisa ama-polytypes amaningi, okuhlukile kwe-doping, amamaki ekhwalithi, osayizi be-SiC wafer, kanye nokukhiqizwa kwangaphakathi kwendlu kanye nokukhiqizwa kwe-seed-crystal, inkundla yethu ye-SiC substrate isakaza amaketanga okuhlinzeka futhi isheshisa ukuthuthukiswa kwedivayisi yezimoto zikagesi, amagridi ahlakaniphile, nezinhlelo zokusebenza zemvelo ezinokhahlo.

Isithombe sika-SiC wafer

Ishidi ledatha le-SiC wafer engu-6inch 4H-N

 

6inch SiC wafers idatha sheet
Ipharamitha Ipharamitha engaphansi Ibanga le-Z Ibanga le-P D Ibanga
Ububanzi   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Ubukhulu 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ubukhulu 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
I-Wafer Orientation   Ku-axis evaliwe: 4.0° kuya ku-<11-20> ±0.5° (4H-N); Ku-eksisi: <0001> ±0.5° (4H-SI) Ku-axis evaliwe: 4.0° kuya ku-<11-20> ±0.5° (4H-N); Ku-eksisi: <0001> ±0.5° (4H-SI) Ku-axis evaliwe: 4.0° kuya ku-<11-20> ±0.5° (4H-N); Ku-eksisi: <0001> ±0.5° (4H-SI)
I-Micropipe Density 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
I-Micropipe Density 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ukungazweli 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ukungazweli 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Isisekelo se-Flat Orientation   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Ubude Befulethi obuyisisekelo 4H‑N 47.5 mm ± 2.0 mm    
Ubude Befulethi obuyisisekelo 4H‑SI Inothi    
Ukukhishwa komkhawulo     3 mm  
I-Warp/LTV/TTV/Bow   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Ubulukhuni IsiPolish I-Ra ≤ 1 nm    
Ubulukhuni I-CMP I-Ra ≤ 0.2 nm   I-Ra ≤ 0.5 nm
Ama-Edge Cracks   Lutho   Ubude obuqongelelwayo ≤ 20 mm, eyodwa ≤ 2 mm
Amapuleti e-Hex   Indawo eqoqiwe ≤ 0.05% Indawo eqoqiwe ≤ 0.1% Indawo eqongelelwe ≤ 1%
Izindawo ze-Polytype   Lutho Indawo eqoqiwe ≤ 3% Indawo eqoqiwe ≤ 3%
I-Carbon Inclusions   Indawo eqoqiwe ≤ 0.05%   Indawo eqoqiwe ≤ 3%
Ukuklwebheka Okungaphezulu   Lutho   Ubude obuqongelelwayo ≤ 1 × ububanzi bewafa
Ama-Edge Chips   Akukho okuvunyelwe ≥ 0.2 mm ububanzi nokujula   Kufika kuma-chips angu-7, ≤ 1 mm ngalinye
I-TSD (I-Threading Screw Dislocation)   ≤ 500 cm⁻²   N/A
I-BPD (Base Plane Dislocation)   ≤ 1000 cm⁻²   N/A
Ukungcoliswa kobuso   Lutho    
Ukupakisha   Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa

Ishidi ledatha le-SiC wafer ye-4inch 4H-N

 

Ishidi ledatha le-4inch SiC wafer
Ipharamitha Zero MPD Production Ibanga Elijwayelekile Lokukhiqiza (iBanga le-P) I-Dummy Grade (D Grade)
Ububanzi 99.5 mm–100.0 mm
Ubukhulu (4H-N) 350 µm±15µm   350 µm±25µm
Ukuqina (4H-Si) 500 µm±15µm   500 µm±25µm
I-Wafer Orientation Ku-axis evaliwe: 4.0° kuya ku-<1120> ±0.5° ku-4H-N; Ku-eksisi: <0001> ±0.5° ku-4H-Si    
Ukuminyana kweMibhobho (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
I-Micropipe Density (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukungazweli (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ukumelana (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Isisekelo se-Flat Orientation   [10-10] ±5.0°  
Ubude Befulethi obuyisisekelo   32.5 mm ±2.0 mm  
Ubude Befulethi besibili   18.0 mm ±2.0 mm  
I-Flat Orientation yesibili   I-silicon ibheke phezulu: 90° CW ukusuka ku-prime flat ±5.0°  
Ukukhishwa komkhawulo   3 mm  
I-LTV/TTV/I-Bow Warp ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ubulukhuni I-Polish Ra ≤1 nm; I-CMP Ra ≤0.2 nm   I-Ra ≤0.5 nm
I-Edge Cracks By High Intensity Light Lutho Lutho Ubude obuqongelelwayo ≤10 mm; ubude obubodwa ≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu Indawo eqoqiwe ≤0.05% Indawo eqoqiwe ≤0.05% Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Lutho   Indawo eqoqiwe ≤3%
I-Visual Carbon Inclusions Indawo eqoqiwe ≤0.05%   Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light Lutho   Ubude obuqongelelwayo ≤1 ububanzi bewafa
Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu Akukho okuvunyelwe ≥0.2 mm ububanzi nokujula   5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity Light Lutho    
Ukukhipha isikulufu sochungechunge ≤500 cm⁻² N/A  
Ukupakisha Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa

Ishidi ledatha le-SiC wafer engu-4inch HPSI

 

Ishidi ledatha le-SiC wafer engu-4inch HPSI
Ipharamitha Ibanga le-Zero MPD Production (Ibanga le-Z) Ibanga Elijwayelekile Lokukhiqiza (iBanga le-P) I-Dummy Grade (D Grade)
Ububanzi   99.5–100.0 mm  
Ukuqina (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
I-Wafer Orientation Ku-axis evaliwe: 4.0° kuya ku-<11-20> ±0.5° ku-4H-N; Ku-eksisi: <0001> ±0.5° ku-4H-Si
I-Micropipe Density (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ukumelana (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Isisekelo se-Flat Orientation (10-10) ±5.0°
Ubude Befulethi obuyisisekelo 32.5 mm ±2.0 mm
Ubude Befulethi besibili 18.0 mm ±2.0 mm
I-Flat Orientation yesibili I-silicon ibheke phezulu: 90° CW ukusuka ku-prime flat ±5.0°
Ukukhishwa komkhawulo   3 mm  
I-LTV/TTV/I-Bow Warp ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ukuqina (C face) IsiPolish I-Ra ≤1 nm  
Ukuqina (Si face) I-CMP I-Ra ≤0.2 nm I-Ra ≤0.5 nm
I-Edge Cracks By High Intensity Light Lutho   Ubude obuqongelelwayo ≤10 mm; ubude obubodwa ≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu Indawo eqoqiwe ≤0.05% Indawo eqoqiwe ≤0.05% Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Lutho   Indawo eqoqiwe ≤3%
I-Visual Carbon Inclusions Indawo eqoqiwe ≤0.05%   Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light Lutho   Ubude obuqongelelwayo ≤1 ububanzi bewafa
Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu Akukho okuvunyelwe ≥0.2 mm ububanzi nokujula   5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity Light Lutho   Lutho
Ukukhipha Isikulufu sochungechunge ≤500 cm⁻² N/A  
Ukupakisha   Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa  

Isicelo se-SiC wafer

 

  • I-SiC Wafer Power Modules ye-EV Inverters
    Ama-MOSFET asekelwe ku-SiC wafer nama-diode akhelwe kuma-wafer substrates e-SiC wekhwalithi ephezulu aletha ukulahlekelwa kokushintsha okuphansi kakhulu. Ngokusebenzisa ubuchwepheshe be-SiC wafer, lawa mamojula amandla asebenza kuma-voltage aphezulu kanye namazinga okushisa, okwenza ama-inverter asebenza kahle kakhulu. Ukuhlanganisa i-SiC wafer ifa ezigabeni zamandla kunciphisa izimfuneko zokupholisa kanye nokugxilwa kwezinyawo, okubonisa amandla aphelele e-SiC wafer innovation.

  • I-High-Frequency RF & 5G Amadivayisi ku-SiC Wafer
    Ama-amplifiers e-RF namaswishi akhiwe kumapulatifomu e-SiC wafer afaka i-semi-insulating abonisa ukuqhutshwa kwe-thermal okuphezulu kanye nogesi wokuwohloka. I-SiC wafer substrate inciphisa ukulahleka kwe-dielectric kumafrikhwensi e-GHz, kuyilapho amandla we-SiC wafer evumela ukusebenza okuzinzile ngaphansi kwezimo zamandla aphezulu, izinga lokushisa eliphezulu—okwenza i-SiC wafer ibe i-substrate ekhethwayo yeziteshi eziyisisekelo ze-5G nezinhlelo ze-radar.

  • Ama-Optoelectronic & LED Substrates avela ku-SiC Wafer
    Ama-LED aluhlaza okwesibhakabhaka nama-UV akhuliswe kuma-SiC wafer substrates azuza ekufanisweni kwe-lattice okuhle kakhulu kanye nokukhishwa kokushisa. Ukusebenzisa iwafa ye-SiC ephucuziwe ye-C-face kuqinisekisa izendlalelo ze-epitaxial ezifanayo, kuyilapho ubulukhuni bemvelo be-SiC wafer buvumela ukucwiliswa kwe-wafer okuhle nokupakishwa kwedivayisi okuthembekile. Lokhu kwenza i-SiC wafer ibe inkundla yokuya phezulu yamandla aphezulu, izinhlelo zokusebenza ze-LED zempilo ende.

I-Q&A ye-SiC wafer

1. Q: Akhiwa kanjani amawafa e-SiC?


A:

Ama-wafers e-SiC akhiqizwaIzinyathelo ezinemininingwane

  1. Ama-wafers e-SiCUkulungiswa Kwempahla Engahluziwe

    • Sebenzisa i-≥5N-grade SiC powder (ukungcola ≤1 ppm).
    • Sefa futhi ubhake ngaphambili ukuze ususe izinsalela zekhabhoni noma izinhlanganisela zenitrogen.

  1. I-SiCImbewu Ukulungiselela Crystal

    • Thatha ucezu lwekristalu eyodwa ye-4H-SiC, sika ngomumo wokuthi 〈0001〉 uye ku-~10 × 10 mm².

    • Ipholishi enembile ukuya ku-Ra ≤0.1 nm futhi imake umumo wekristalu.

  2. I-SiCUkukhula kwe-PVT (Izokuthutha Ngomphunga Womzimba)

    • Layisha i-graphite crucible: phansi nge-SiC powder, phezulu ngekristalu lembewu.

    • Phuma uye ku-10⁻³–10⁻⁵ Torr noma gcwalisa emuva nge-helium ehlanzekile ngo-1 atm.

    • Indawo yomthombo wokushisa ibe ngu-2100–2300 ℃, gcina indawo yembewu ipholile ku-100–150 ℃.

    • Lawula izinga lokukhula ku-1–5 mm/h ukuze ulinganisele ikhwalithi kanye nokuphumayo.

  3. I-SiCIngot Annealing

    • Anneal ingot ye-SiC esekhulile ku-1600–1800 ℃ amahora angu-4–8.

    • Inhloso: khulula izingcindezi ezishisayo futhi unciphise ukuminyana kokuhlukaniswa.

  4. I-SiCI-Wafer Slicing

    • Sebenzisa isaha yocingo lwedayimane ukuze usike ingot ibe amawafa awugqinsi angu-0.5–1 mm.

    • Nciphisa ukudlidliza namandla angemuva ukuze ugweme imifantu emincane.

  5. I-SiCI-waferUkugaya & Ukupholisha

    • Ukugaya okumahhadlaukususa umonakalo wokusaha (ubukhulu ~10–30 µm).

    • Ukugaya kahleukuze uthole flatness ≤5 µm.

    • I-Chemical-Mechanical polishing (CMP)ukuze ufinyelele ekugcineni okufana nesibuko (Ra ≤0.2 nm).

  6. I-SiCI-waferUkuhlanza & Ukuhlola

    • Ukuhlanza kwe-ultrasonickusixazululo se-Piranha (H₂SO₄:H₂O₂), amanzi e-DI, bese kuba yi-IPA.

    • XRD/Raman spectroscopyukuze uqinisekise i-polytype (4H, 6H, 3C).

    • I-Interferometryukukala ukucaba (<5 µm) kanye nokujika (<20 µm).

    • Uphenyo lwamaphuzu amaneukuhlola ukumelana (isb. HPSI ≥10⁹ Ω·cm).

    • Ukuhlola iphuthangaphansi kwe-polarized light microscope kanye ne-scratch tester.

  7. I-SiCI-waferUkuhlukanisa nokuhlunga

    • Hlunga ama-wafer nge-polytype kanye nohlobo lukagesi:

      • 4H-SiC N-uhlobo (4H-N): ukugxiliswa kwenkampani yenethiwekhi 10¹⁶–10¹⁸ cm⁻³

      • I-4H-SiC High Purity Semi-Insulating (4H-HPSI): ukumelana ≥10⁹ Ω·cm

      • 6H-SiC N-uhlobo (6H-N)

      • Abanye: 3C-SiC, P-uhlobo, njll.

  8. I-SiCI-waferUkupakisha nokuthunyelwa

    • Beka emabhokisini amawafa ahlanzekile, angenalo uthuli.

    • Lebula ibhokisi ngalinye elinobubanzi, ukujiya, i-polytype, ibanga le-resistivity, nenombolo yeqoqo.

      Ama-wafers e-SiC

2. Q: Yiziphi izinzuzo ezibalulekile zamawafa e-SiC ngaphezu kwamawafa e-silicon?


A: Uma kuqhathaniswa namawafa e-silicon, ama-wafers e-SiC anika amandla:

  • Ukusebenza kwe-voltage ephezulu(>1,200 V) enokumelana okuphansi.

  • Ukuzinza okuphezulu kwezinga lokushisa(>300 °C) nokuphathwa kwezinga lokushisa okuthuthukisiwe.

  • Isivinini sokushintsha ngokusheshangokulahleka kokushintsha okuphansi, ukunciphisa ukupholisa kwezinga lesistimu kanye nosayizi kuziguquli zamandla.

4. Q: Yiziphi izici ezivamile ezithinta isivuno se-SiC wafer nokusebenza?


A: Ukukhubazeka okuyinhloko kuma-wafer we-SiC kufaka phakathi amapayipi amancane, i-basal plane dislocations (BPDs), kanye nokuklwebheka kwendawo. Amapayipi amancane angabangela ukwehluleka kwedivayisi okuyinhlekelele; Ama-BPD akhulisa ukumelana nesikhathi; futhi imihuzuko engaphezulu iholela ekuqhekekeni kwe-wafer noma ukukhula okungekuhle kwe-epitaxial. Ukuhlolwa okuqinile kanye nokunciphisa amaphutha kubalulekile ukuze kwandiswe isivuno se-SiC wafer.

Isikhathi sokuthumela: Jun-30-2025
Chofoza u-enter ukuze useshe noma u-ESC ukuze uvale