I-Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: Into Efanayo Neziphetho Ezimbili Ezihlukene

1. Izidingo Zokuhlanzeka Ezihlukene Zezinto Ezingavuthiwe

 

I-Ceramic-grade SiC inezidingo zokuhlanzeka ezithambile ngokuphakelayo kwempushana yayo. Ngokuvamile, imikhiqizo yezinga lezentengiselwano enobumsulwa obungu-90% -98% ingahlangabezana nezidingo eziningi zohlelo lokusebenza, nakuba izitsha zobumba ezisebenza kahle zingadinga ukuhlanzeka okungu-98% -99.5% (isb., i-SiC enesibopho sokusabela idinga okuqukethwe kwe-silicon yamahhala okulawulwayo). Ibekezelela ukungcola okuthile futhi ngezinye izikhathi ihlanganisa ngamabomu izinsiza ezifana ne-aluminium oxide (Al₂O₃) noma i-yttrium oxide (Y₂O₃) ukuze kuthuthukiswe ukusebenza kwe-sintering, izinga lokushisa eliphansi le-sintering, kanye nokuthuthukisa ukuminyana komkhiqizo wokugcina.

 

I-SiC ye-Semiconductor-grade idinga amazinga okuhlanzeka aseduze nokuphelela. I-crystal SiC eyodwa ye-Substrate-grade idinga ukuhlanzeka okungu-≥99.9999% (6N), nezinye izinhlelo zokusebenza ezisezingeni eliphezulu ezidinga ubumsulwa be-7N (99.99999%). Izendlalelo ze-Epitaxial kufanele zigcine ukugxila kokungcola ngaphansi kuka-10¹⁶ ama-athomu/cm³ (ikakhulukazi kugwenywe ukungcola kwezinga elijulile njengo-B, Al, no-V). Ngisho nokulandelela ukungcola okufana ne-iron (Fe), i-aluminium (Al), noma i-boron (B) ingaba nomthelela omubi ezintweni zikagesi ngokubangela ukusakazeka kwenkampani yenethiwekhi, ukwehlisa amandla enkambu yokuphuka, futhi ekugcineni kufake engcupheni ukusebenza nokuthembeka kwedivayisi, okudinge ukulawula okuqinile kokungcola.

 

I-silicon carbide semiconductor impahla

 

2. Izakhiwo Nekhwalithi Ehlukile Yekristalu

 

I-Ceramic-grade SiC itholakala ngokuyinhloko njenge-polycrystalline powder noma imizimba e-sintered eyakhiwe ama-microcrystals e-SiC agxile ngokungahleliwe. Impahla ingase iqukathe ama-polytypes amaningi (isb, α-SiC, β-SiC) ngaphandle kokulawula okuqinile kuma-polytypes athile, esikhundleni salokho kugcizelelwa kubuningi bezinto ezibonakalayo nokufana. Isakhiwo sayo sangaphakathi sibonisa inqwaba yemingcele yokusanhlamvu kanye nezimbotshana ezincane kakhulu, futhi zingaqukatha izinsiza ezicwebezelayo (isb, i-Al₂O₃, Y₂O₃).

 

I-SiC ye-Semiconductor-grade kufanele ibe yi-single-crystal substrates noma izendlalelo ze-epitaxial ezinezinhlaka zekristalu ezi-odwe kakhulu. Idinga ama-polytypes athile atholwe ngamasu okukhula kwekristalu anembayo (isb, 4H-SiC, 6H-SiC). Izakhiwo zikagesi ezifana nokuhamba kwama-electron kanye ne-bandgap zizwela kakhulu ekukhethweni kwe-polytype, okudinga ukulawula okuqinile. Njengamanje, i-4H-SiC ibusa imakethe ngenxa yezakhiwo zayo eziphakeme zikagesi ezihlanganisa ukuhamba kwenkampani yenethiwekhi kanye namandla enkambu ephukile, okwenza kube ilungele amadivayisi kagesi.

 

3. Inqubo Complexity Ukuqhathanisa

 

I-Ceramic-grade SiC isebenzisa izinqubo zokukhiqiza ezilula uma kuqhathaniswa (ukulungiswa kwempuphu → ukwakha → ukucwilisa), okufana “nokwenza izitini.” Inqubo ibandakanya:

 

• Ukuhlanganisa impushana ye-SiC yezinga lezentengiso (imvamisa enosayizi omncane we-micron) nezibophezelo
• Yakha ngokucindezela
• I-high-temperature sintering (1600-2200°C) ukuze kuzuzwe ukuminyana ngokusabalalisa izinhlayiyana
  Iningi lezinhlelo zokusebenza linganeliswa > 90% ukuminyana. Yonke le nqubo ayidingi ukulawulwa kokukhula kwekristalu okunembile, esikhundleni salokho kugxile ekwakhiweni nasekuhambisaneni kwe-sintering. Izinzuzo zihlanganisa ukuguquguquka kwenqubo yezimo eziyinkimbinkimbi, nakuba kunezidingo zokuhlanzeka eziphansi.

 

I-SiC yezinga le-semiconductor ihilela izinqubo eziyinkimbinkimbi kakhulu (ukulungiswa kwempushana ehlanzeke kakhulu → ukukhula kwe-substrate yekristalu eyodwa → i-epitaxial wafer deposition → ukwakhiwa kwedivayisi). Izinyathelo ezibalulekile zifaka:

 

• Ukulungiswa kwe-substrate ngokuyinhloko kusetshenziswa indlela ye-physical vapor transport (PVT).
• I-Sublimation ye-SiC powder ezimweni ezimbi kakhulu (2200-2400 ° C, i-vacuum ephezulu)
• Ukulawula okunembile kwamagradients okushisa (±1°C) nemingcele yokucindezela
• Ukukhula kongqimba lwe-Epitaxial nge-chemical vapor deposition (CVD) ukuze kwakheke izendlalelo eziwugqinsi, ezigobile (imvamisa ezimbalwa ukuya kwamashumi ama-microns)
  Yonke le nqubo idinga izindawo ezihlanzeke kakhulu (isb., amagumbi okuhlanza ekilasi le-10) ukuze kuvinjelwe ukungcola. Izici zifaka ukunemba kwenqubo okwedlulele, okudinga ukulawula izinkambu ezishisayo namazinga okugeleza kwegesi, okunezidingo eziqinile zakho kokubili ubumsulwa bempahla eluhlaza (>99.9999%) nobunkimbinkimbi bemishini.

 

4. Umehluko Obalulekile Wezindleko kanye Nezimakethe Zemakethe

 

Izici ze-Ceramic-grade SiC:

• Impahla eluhlaza: Impushana yezinga lezentengiso
• Izinqubo ezilula ngokuqhathaniswa
• Izindleko eziphansi: Izinkulungwane kuya emashumini ezinkulungwane zama-RMB ngethani
• Izicelo ezibanzi: Ama-Abrasives, ama-refractory, nezinye izimboni ezingazweli kakhulu

 

Izici ze-Semiconductor-grade SiC:

• Imijikelezo emide yokukhula kwe-substrate
• Ukulawula amaphutha okuyinselele
• Amazinga esivuno aphansi
• Izindleko eziphezulu: Izinkulungwane zama-USD nge-substrate ngayinye engu-6 intshi
• Izimakethe ezigxiliwe: Ama-electronics asebenza kahle njengamadivayisi kagesi nezingxenye ze-RF
  Ngokuthuthuka okusheshayo kwezimoto zamandla amasha kanye nokuxhumana kwe-5G, isidingo semakethe sikhula kakhulu.

 

5. Izimo Zokusebenza Ezihlukene

 

I-Ceramic-grade SiC isebenza "njengehhashi lemboni" ngokuyinhloko ekusetshenzisweni kwesakhiwo. Isebenzisa izici zayo ezinhle kakhulu zemishini (ukuqina okuphezulu, ukumelana nokugqokwa) kanye nezakhiwo ezishisayo (ukumelana nezinga lokushisa eliphezulu, ukumelana ne-oxidation), iyaphumelela kulokhu:

 

• Ama-Abrasives (amasondo okugaya, i-sandpaper)
• Ama-refractories (ama-lining okushisa aphezulu)
• Izinto ezigqokwayo/ezimelana nokugqwala (imizimba yamaphampu, imigqa yamapayipi)

 

Izingxenye zesakhiwo se-silicon carbide ceramic

 

I-SiC ye-Semiconductor-grade isebenza "njenge-electronic elite," isebenzisa izakhiwo zayo ze-bandgap semiconductor ebanzi ukuze ibonise izinzuzo eziyingqayizivele kumadivayisi kagesi:

 

• Amadivayisi kagesi: Iziguquli ze-EV, iziguquli zegridi (ukuthuthukisa ukusebenza kahle kokuguqulwa kwamandla)
• Amadivayisi e-RF: Iziteshi eziyisisekelo ze-5G, amasistimu e-radar (avumela amaza okusebenza aphezulu)
• I-Optoelectronics: I-Substrate material yama-LED aluhlaza

 

200-millimeter SiC epitaxial wafer

 

Ubukhulu	I-Ceramic-grade SiC	I-Semiconductor-grade SiC
Isakhiwo Sekristalu	I-Polycrystalline, i-polytypes eminingi	I-crystal eyodwa, ama-polytypes akhethwe ngokuqinile
Ukugxila Kwenqubo	Ukuminyana kanye nokulawula ukuma	Ikhwalithi yekristalu nokulawula impahla kagesi
Ukusebenza Okubalulekile	Amandla omshini, ukumelana nokugqwala, ukuzinza kokushisa	Izakhiwo zikagesi (i-bandgap, inkambu yokuphuka, njll.)
Izimo zohlelo lokusebenza	Izingxenye zesakhiwo, izingxenye ezingagugi, izingxenye ezishisa kakhulu	Amadivayisi anamandla aphezulu, amadivaysi asebenza kakhulu, amadivaysi e-optoelectronic
Abashayeli Bezindleko	Ukuvumelana nezimo, izindleko zempahla eluhlaza	Izinga lokukhula kwe-Crystal, ukunemba kwemishini, ubumsulwa bempahla eluhlaza

 

Kafushane, umehluko oyisisekelo usukela ezinjongweni zabo zokusebenza ezihlukile: i-ceramic-grade SiC isebenzisa "ifomu (isakhiwo)" kuyilapho i-semiconductor-grade SiC isebenzisa "izakhiwo (zikagesi)." Eyangaphambili iphishekela ukusebenza komshini/okushisa okungabizi, kuyilapho lokhu kwakamuva kumelela isiqongo sobuchwepheshe bokulungiselela izinto njengokuhlanzeka okuphezulu, okusebenzayo kwekristalu elilodwa. Nakuba zabelana ngomsuka ofanayo wamakhemikhali, i-Ceramic-grade kanye ne-semiconductor-grade SiC ibonisa umehluko ocacile ekuhlanzekeni, ukwakheka kwekristalu, nezinqubo zokukhiqiza - nokho zombili zenza umnikelo obalulekile ekukhiqizeni kwezimboni kanye nentuthuko yezobuchwepheshe ezizindeni zazo.