I-Silicon Carbide Ceramics vs. Semiconductor I-Silicon Carbide: Izinto Ezifanayo Ezineziphetho Ezimbili Ezihlukile

1. Izidingo Zokuhlanzeka Okuhlukahlukene Kwezinto Zokusetshenziswa Ezingavuthiwe

 

I-SiC yezinga le-ceramic inezidingo zokuhlanzeka okulula kwe-feedstock yayo yempuphu. Ngokuvamile, imikhiqizo yezinga lokuhweba enobumsulwa obungu-90%-98% ingahlangabezana nezidingo eziningi zohlelo lokusebenza, yize i-ceramics yesakhiwo esebenza kahle ingadinga ubumsulwa obungu-98%-99.5% (isb., i-SiC eboshwe yi-reaction idinga okuqukethwe kwe-silicon yamahhala okulawulwayo). Ibekezelela ukungcola okuthile futhi ngezinye izikhathi ifaka ngamabomu izinsiza zokuhlanzeka njenge-aluminium oxide (Al₂O₃) noma i-yttrium oxide (Y₂O₃) ukuthuthukisa ukusebenza kokuhlanzeka, ukwehlisa amazinga okushisa okuhlanzeka, nokuthuthukisa ubuningi bomkhiqizo wokugcina.

 

I-SiC yezinga le-semiconductor idinga amazinga okuhlanzeka acishe aphelele. I-SiC yekristalu eyodwa yezinga le-substrate idinga ubumsulwa obungu-≥99.9999% (6N), kanti ezinye izinhlelo zokusebenza eziphezulu zidinga ubumsulwa obungu-7N (99.99999%). Izingqimba ze-Epitaxial kumele zigcine amazinga okungcola angaphansi kwama-athomu angu-10¹⁶/cm³ (ikakhulukazi ukugwema ukungcola okujulile njenge-B, Al, kanye ne-V). Ngisho nokungcola okumbalwa okufana ne-iron (Fe), i-aluminium (Al), noma i-boron (B) kungathinta kakhulu izakhiwo zikagesi ngokubangela ukusabalala kwenkampani, ukunciphisa amandla ensimu yokuwohloka, futhi ekugcineni kubeke engcupheni ukusebenza kwedivayisi nokuthembeka, kudingeke ukulawulwa okuqinile kokungcola.

 

Izinto ze-semiconductor ze-silicon carbide

 

2. Izakhiwo Ezihlukile Zekristalu Nekhwalithi

 

I-SiC yezinga le-ceramic ikhona ngokuyinhloko njenge-polycrystalline powder noma imizimba ehlanganisiwe eyakhiwe ama-microcrystal amaningi e-SiC aqondiswe ngokungahleliwe. Izinto zingaqukatha ama-polytype amaningi (isb., α-SiC, β-SiC) ngaphandle kokulawula okuqinile ama-polytype athile, kugxilwe kakhulu ekubuneni kwezinto kanye nokufana kwazo zonke. Isakhiwo sayo sangaphakathi sinemingcele eminingi yokusanhlamvu kanye nama-pores amancane, futhi singaqukatha izinsiza zokususa ukungcola (isb., Al₂O₃, Y₂O₃).

 

I-SiC yezinga le-semiconductor kumele ibe yi-single-crystal substrates noma izingqimba ze-epitaxial ezinezakhiwo zekristalu ezihlelekile kakhulu. Idinga izinhlobo ezithile ze-polytype ezitholakala ngamasu okukhula kwekristalu ngokunemba (isb., 4H-SiC, 6H-SiC). Izakhiwo zikagesi ezifana nokuhamba kwe-electron kanye ne-bandgap zizwela kakhulu ekukhethweni kwezinhlobo ze-polytype, okudinga ukulawulwa okuqinile. Njengamanje, i-4H-SiC ibusa imakethe ngenxa yezakhiwo zayo zikagesi eziphakeme okuhlanganisa ukuhamba okuphezulu kwenkampani kanye namandla ensimu yokuqhekeka, okwenza ibe yindawo ekahle kumadivayisi kagesi.

 

3. Ukuqhathaniswa Kobunzima Benqubo

 

I-SiC yezinga le-ceramic isebenzisa izinqubo zokukhiqiza ezilula (ukulungiswa kwempuphu → ukwakheka → ukuthungwa), okufana "nokwenza izitini." Le nqubo ihilela:

 

• Ukuxuba i-SiC powder yezinga lokuhweba (ngokuvamile ngobukhulu be-micron) nama-binder
• Ukwakheka ngokucindezela
• Ukushisa okuphezulu (1600-2200°C) ukuze kufezwe ukuqina ngokusabalala kwezinhlayiya
  Iningi lezicelo linganeliseka ngobuningi obungaphezulu kuka-90%. Yonke inqubo ayidingi ukulawulwa okuqondile kokukhula kwekristalu, kunalokho igxile ekwakheni nasekuhlanganiseni ukuqina. Izinzuzo zifaka phakathi ukuguquguquka kwenqubo yezimo eziyinkimbinkimbi, yize kunezidingo eziphansi zokuhlanzeka.

 

I-SiC yezinga le-semiconductor ihilela izinqubo eziyinkimbinkimbi kakhulu (ukulungiswa kwempuphu ehlanzekile kakhulu → ukukhula kwe-substrate yekristalu eyodwa → ukufakwa kwe-epitaxial wafer → ukwenziwa kwedivayisi). Izinyathelo ezibalulekile zifaka:

 

• Ukulungiswa kwe-substrate ngokuyinhloko ngendlela yokuthuthwa komhwamuko ongokoqobo (i-PVT)
• Ukufakwa kwe-Sublimation ye-SiC powder ezimweni ezimbi kakhulu (2200-2400°C, i-vacuum ephezulu)
• Ukulawulwa okunembile kwe-gradient yokushisa (±1°C) kanye namapharamitha okucindezela
• Ukukhula kwengqimba ye-Epitaxial nge-chemical vapor deposition (CVD) ukudala izendlalelo ezijiyile ngokulinganayo, ezihlanganisiwe (ngokuvamile eziningana kuya kwezingamashumi zama-micron)
  Yonke inqubo idinga izindawo ezihlanzekile kakhulu (isb., amakamelo okuhlanza ekilasi le-10) ukuvimbela ukungcola. Izici zifaka phakathi ukunemba okukhulu kwenqubo, okudinga ukulawula amasimu okushisa kanye namazinga okugeleza kwegesi, kanye nezidingo eziqinile zokuhlanzeka kwezinto zokusetshenziswa (>99.9999%) kanye nobuchwepheshe bemishini.

 

4. Umehluko Obalulekile Wezindleko kanye Nokuqondiswa Kwemakethe

 

Izici ze-SiC ze-Ceramic-grade:

• Izinto zokusetshenziswa: Impuphu yezinga lokuhweba
• Izinqubo ezilula kakhulu
• Izindleko eziphansi: Izinkulungwane kuya emashumini ezinkulungwane RMB ngethani
• Izicelo Ezibanzi: Ama-Abrasives, ama-Refractories, kanye nezinye izimboni ezibiza kakhulu

 

Izici ze-SiC ze-semiconductor-grade:

• Imijikelezo emide yokukhula kwe-substrate
• Ukulawula amaphutha okunzima
• Amanani entengo ephansi
• Izindleko eziphezulu: Izinkulungwane zama-USD nge-substrate engu-6-intshi ngayinye
• Izimakethe ezigxile: Izinto zikagesi ezisebenza kahle kakhulu njengamadivayisi kagesi kanye nezingxenye ze-RF
  Ngokuthuthuka okusheshayo kwezimoto ezintsha zamandla kanye nokuxhumana kwe-5G, isidingo semakethe sikhula ngokushesha.

 

5. Izimo Zokusebenza Ezihlukanisiwe

 

I-SiC yezinga le-ceramic isebenza "njengehhashi lomsebenzi wezimboni" ikakhulukazi ekusetshenzisweni kwesakhiwo. Isebenzisa izakhiwo zayo ezinhle kakhulu zemishini (ubulukhuni obuphezulu, ukumelana nokuguguleka) kanye nezakhiwo zokushisa (ukumelana nokushisa okuphezulu, ukumelana nokushiswa), idlula konke lokhu:

 

• Ama-abrasives (amasondo okugaya, iphepha lokusanta)
• Izinto ezivuselela umoya (izindwangu ze-furnace ezishisa kakhulu)
• Izingxenye ezingagugi/ezingagqwali (imizimba yephampu, ulwelwesi lwamapayipi)

 

Izingxenye zesakhiwo se-silicon carbide ceramic

 

I-SiC yezinga le-semiconductor isebenza njenge-"electric elite," isebenzisa izakhiwo zayo ze-semiconductor ezibanzi ze-bandgap ukukhombisa izinzuzo eziyingqayizivele kumadivayisi kagesi:

 

• Amadivayisi kagesi: Ama-inverter e-EV, ama-grid converters (ukuthuthukisa ukusebenza kahle kokuguqulwa kwamandla)
• Amadivayisi e-RF: Iziteshi zesisekelo ze-5G, izinhlelo ze-radar (ezivumela amaza okusebenza aphezulu)
• I-Optoelectronics: Izinto ezingaphansi kwesisekelo zama-LED aluhlaza okwesibhakabhaka

 

I-wafer ye-epitaxial ye-SiC engamamilimitha angu-200

 

Ubukhulu	I-SiC yezinga le-Ceramic	I-SiC yebanga le-semiconductor
Isakhiwo sekristalu	I-Polycrystalline, izinhlobo eziningi ze-polytype	Ikristalu elilodwa, ama-polytype akhethwe ngokuqinile
Ukugxila Kwenqubo	Ukuqina kanye nokulawula ukuma	Ikhwalithi yekristalu kanye nokulawulwa kwempahla kagesi
Ukubaluleka Kokusebenza	Amandla omshini, ukumelana nokugqwala, ukuqina kokushisa	Izakhiwo zikagesi (i-bandgap, insimu yokuqhekeka, njll.)
Izimo Zohlelo Lokusebenza	Izingxenye zesakhiwo, izingxenye ezingagugi, izingxenye ezishisa kakhulu	Amadivayisi anamandla aphezulu, amadivayisi asebenzisa imvamisa ephezulu, amadivayisi e-optoelectronic
Abashayeli Bezindleko	Ukuguquguquka kwenqubo, izindleko zezinto zokusetshenziswa	Izinga lokukhula kwekristalu, ukunemba kwemishini, ubumsulwa bezinto zokusetshenziswa

 

Ngamafuphi, umehluko oyisisekelo uvela ezinhlosweni zazo zokusebenza ezihlukile: i-SiC yebanga le-ceramic isebenzisa "ifomu (isakhiwo)" kuyilapho i-SiC yebanga le-semiconductor isebenzisa "izakhiwo (zikagesi)." Eyokuqala iphishekela ukusebenza komshini/ukushisa okungabizi kakhulu, kanti eyesibili imelela isiqongo sobuchwepheshe bokulungiselela izinto njengento ehlanzekile kakhulu, esebenza ngekristalu elilodwa. Nakuba ihlanganyela umsuka ofanayo wamakhemikhali, i-SiC yebanga le-ceramic kanye ne-semiconductor ibonisa umehluko ocacile ekuhlanzekeni, isakhiwo sekristalu, kanye nezinqubo zokukhiqiza - kodwa zombili zinegalelo elikhulu ekukhiqizweni kwezimboni kanye nokuthuthuka kobuchwepheshe ezindaweni zazo.