Ngomhlaka-26, i-Power Cube Semi yamemezela intuthuko ephumelelayo ye-semiconductor yokuqala ye-2300V SiC (Silicon Carbide) MOSFET yaseNingizimu Korea.
Uma kuqhathaniswa nama-semiconductor akhona asekelwe ku-Si (Silicon), i-SiC (Silicon Carbide) ingamelana nama-voltage aphezulu, ngakho-ke ibizwa ngokuthi idivayisi yesizukulwane esilandelayo ehola ikusasa lama-semiconductor anamandla. Isebenza njengengxenye ebalulekile edingekayo ekwethuleni ubuchwepheshe obusezingeni eliphezulu, njengokwanda kwezimoto zikagesi kanye nokwandiswa kwezikhungo zedatha eziqhutshwa ubuhlakani bokwenziwa.
I-Power Cube Semi yinkampani engenazo inganekwane ethuthukisa amadivayisi e-semiconductor kagesi ngezigaba ezintathu eziyinhloko: i-SiC (Silicon Carbide), i-Si (Silicon), kanye ne-Ga2O3 (Gallium Oxide). Muva nje, le nkampani ifake isicelo futhi yathengisa ama-Schottky Barrier Diodes (SBDs) anomthamo ophezulu enkampanini yezimoto zikagesi yomhlaba wonke eShayina, yathola ukuqashelwa ngomklamo wayo kanye nobuchwepheshe be-semiconductor.
Ukukhishwa kwe-2300V SiC MOSFET kuyaphawuleka njengecala lokuqala lokuthuthukiswa okunjalo eNingizimu Korea. I-Infineon, inkampani yomhlaba wonke ye-semiconductor yamandla eseJalimane, nayo yamemezela ukwethulwa komkhiqizo wayo we-2000V ngoMashi, kodwa ngaphandle kohlu lwemikhiqizo ye-2300V.
I-Infineon's 2000V CoolSiC MOSFET, esebenzisa iphakheji ye-TO-247PLUS-4-HCC, ihlangabezana nesidingo sokwanda kwamandla phakathi kwabaklami, iqinisekisa ukuthembeka kwesistimu ngisho nangaphansi kwezimo ezinzima ze-voltage ephezulu kanye nemvamisa yokushintsha.
I-CoolSiC MOSFET inikeza i-voltage ephezulu yokuxhumanisa yamanje ngqo, okuvumela ukwanda kwamandla ngaphandle kokwanda kwamanje. Yidivayisi yokuqala ye-silicon carbide emakethe ene-voltage yokuqhekeka engu-2000V, isebenzisa iphakheji ye-TO-247PLUS-4-HCC enebanga lokuqhekeka elingu-14mm kanye nesikhala esingu-5.4mm. Lawa madivayisi anokulahlekelwa okuncane kokushintsha futhi afaneleka ezinhlelweni ezifana nama-solar string inverters, izinhlelo zokugcina amandla, kanye nokushaja izimoto zikagesi.
Uchungechunge lwemikhiqizo ye-CoolSiC MOSFET 2000V lufanelekela izinhlelo zamabhasi ze-DC ezinama-voltage aphezulu afinyelela ku-1500V DC. Uma kuqhathaniswa ne-1700V SiC MOSFET, le divayisi inikeza i-overvoltage margin eyanele yezinhlelo ze-1500V DC. I-CoolSiC MOSFET inikeza i-threshold voltage engu-4.5V futhi ifakwe ama-body diode aqinile okushintshashintsha okuqinile. Ngobuchwepheshe bokuxhuma be-.XT, lezi zingxenye zinikeza ukusebenza okuhle kakhulu kokushisa kanye nokumelana nomswakama okunamandla.
Ngaphezu kwe-2000V CoolSiC MOSFET, i-Infineon izokwethula maduze ama-CoolSiC diode ahambisanayo ahlanganiswe kumaphakheji e-TO-247PLUS 4-pin kanye ne-TO-247-2 kwikota yesithathu ka-2024 kanye nekota yokugcina ka-2024, ngokulandelana. Lawa ma-diode afaneleka kakhulu ekusetshenzisweni kwelanga. Inhlanganisela yemikhiqizo yomshayeli wesango elihambisanayo nayo iyatholakala.
Uchungechunge lwemikhiqizo ye-CoolSiC MOSFET 2000V seluyatholakala emakethe. Ngaphezu kwalokho, i-Infineon inikeza amabhodi okuhlola afanele: i-EVAL-COOLSIC-2KVHCC. Abathuthukisi bangasebenzisa leli bhodi njengeplatifomu yokuhlola eqondile yokuhlola wonke ama-CoolSiC MOSFET nama-diode alinganiswe ku-2000V, kanye nochungechunge lomkhiqizo lwe-EiceDRIVER compact single-channel isolation gate driver 1ED31xx ngokusebenzisa ukusebenza kwe-dual-pulse noma okuqhubekayo kwe-PWM.
UGung Shin-soo, iSikhulu Esiphezulu Sezobuchwepheshe sePower Cube Semi, uthe, "Sikwazile ukwandisa ulwazi lwethu olukhona ekuthuthukisweni nasekukhiqizweni okukhulu kwama-1700V SiC MOSFETs lube yi-2300V."
Isikhathi sokuthunyelwe: Ephreli-08-2024