Ngomhla zingama-26, i-Power Cube Semi yamemezela ukuthuthukiswa ngempumelelo kwe-semiconductor yokuqala yaseNingizimu Korea engu-2300V SiC (Silicon Carbide) MOSFET.
Uma kuqhathaniswa nama-semiconductors asekelwe e-Si (Silicon), i-SiC (i-Silicon Carbide) ingamelana nama-voltage aphezulu, yingakho inconywa njengedivayisi yesizukulwane esilandelayo ehola ikusasa lama-semiconductors amandla. Isebenza njengengxenye ebalulekile edingekayo ekwethulweni kobuchwepheshe besimanje, njengokwanda kwezimoto ezisebenza ngogesi kanye nokwandiswa kwezikhungo zedatha eziqhutshwa ubuhlakani bokwenziwa.
I-Power Cube Semi yinkampani engenzi lutho ethuthukisa amadivaysi e-semiconductor yamandla ezigabeni ezintathu eziyinhloko: i-SiC (Silicon Carbide), i-Si (Silicon), ne-Ga2O3 (Gallium Oxide). Muva nje, inkampani ifake isicelo futhi idayise i-Schottky Barrier Diodes (SBDs) esezingeni eliphezulu enkampanini yezimoto ezisebenza ngogesi emhlabeni wonke e-China, yathola ukuqashelwa ngomklamo wayo we-semiconductor nobuchwepheshe.
Ukukhishwa kwe-2300V SiC MOSFET kuyaphawuleka njengecala lokuqala lokuthuthukiswa okunjalo eSouth Korea. I-Infineon, okuyinkampani yomhlaba wonke ye-semiconductor yamandla ezinze eJalimane, nayo yamemezela ukwethulwa komkhiqizo wayo we-2000V ngoMashi, kodwa ngaphandle kohlu lomkhiqizo we-2300V.
I-Infineon's 2000V CoolSiC MOSFET, esebenzisa iphakheji ye-TO-247PLUS-4-HCC, ihlangabezana nesidingo sokukhula kwamandla okuminyana phakathi kwabaklami, iqinisekisa ukwethembeka kohlelo ngisho nangaphansi kwezimo eziqinile zamandla kagesi kanye nezimo zokushintshwa kwemvamisa.
I-CoolSiC MOSFET inikeza i-voltage yesixhumanisi yamanje ephezulu eqondile, evumela ukwanda kwamandla ngaphandle kokwanda kwamanje. Iwumshini wokuqala ohlukile we-silicon carbide emakethe onamandla kagesi wokuwohloka ongu-2000V, kusetshenziswa iphakheji ye-TO-247PLUS-4-HCC enebanga elingu-14mm kanye nemvume engu-5.4mm. Lawa madivayisi afaka ukulahlekelwa okuphansi kokushintsha futhi afanele izinhlelo zokusebenza ezifana nama-solar string inverters, izinhlelo zokugcina amandla, nokushaja imoto kagesi.
Uchungechunge lomkhiqizo we-CoolSiC MOSFET 2000V lulungele amabhasi e-DC anamandla kagesi afinyelela ku-1500V DC. Uma kuqhathaniswa ne-1700V SiC MOSFET, le divayisi ihlinzeka ngemajini eyanele ye-overvoltage yezinhlelo ze-1500V DC. I-CoolSiC MOSFET inikezela nge-4.5V threshold voltage futhi ifika ifakwe ama-diode aqinile omzimba wokushintshwa kanzima. Ngobuchwepheshe bokuxhumeka kwe-XT, lezi zingxenye zinikeza ukusebenza okuhle kakhulu kokushisayo kanye nokumelana nokuswakama okuqinile.
Ngaphezu kwe-2000V CoolSiC MOSFET, i-Infineon maduze izokwethula ama-CoolSiC diode ahambisanayo apakishwe ku-TO-247PLUS 4-pin kanye namaphakheji we-TO-247-2 engxenyeni yesithathu ka-2024 kanye nekota yokugcina ka-2024, ngokulandelana. Lawa ma-diode afaneleka ngokukhethekile ekusetshenzisweni kwelanga. Inhlanganisela yomkhiqizo womshayeli wesango elifanayo iyatholakala.
Uchungechunge lomkhiqizo we-CoolSiC MOSFET 2000V manje seluyatholakala emakethe. Ngaphezu kwalokho, i-Infineon inikeza amabhodi okuhlola afanelekile: EVAL-COOLSIC-2KVHCC. Onjiniyela bangasebenzisa leli bhodi njengenkundla yokuhlola evamile enembile ukuze bahlole wonke ama-CoolSiC MOSFET nama-diode akalwe ku-2000V, kanye ne-EiceDRIVER compact single-channel isolation gate driver 1ED31xx uchungechunge lomkhiqizo ngokusebenzisa i-dual-pulse noma ukuqhubeka kwe-PWM yokusebenza.
UGung Shin-soo, oyiChief Technology Officer kwaPower Cube Semi, uthe, “Sikwazile ukwandisa ulwazi lwethu olukhona ekuthuthukisweni nasekukhiqizweni ngobuningi be-1700V SiC MOSFETs kuya ku-2300V.
Isikhathi sokuthumela: Apr-08-2024