Ama-Semiconductor Substrates kanye ne-Epitaxy: Izisekelo Zobuchwepheshe Ezisekela Amandla Esimanje kanye Namadivayisi e-RF

Intuthuko kwezobuchwepheshe be-semiconductor ichazwa kakhulu yintuthuko ezindaweni ezimbili ezibalulekile:izisekelofuthiizendlalelo ze-epitaxialLezi zingxenye ezimbili zisebenza ndawonye ukunquma ukusebenza kukagesi, ukushisa, kanye nokuthembeka kwamadivayisi athuthukile asetshenziswa ezimotweni zikagesi, iziteshi zesisekelo ze-5G, ama-electronics abathengi, kanye nezinhlelo zokuxhumana ze-optical.

Nakuba i-substrate inikeza isisekelo esingokoqobo nesicwebezelayo, ungqimba lwe-epitaxial lwakha i-core esebenzayo lapho kwakhiwa khona ukuziphatha kwe-frequency ephezulu, amandla aphezulu, noma i-optoelectronic. Ukuhambisana kwazo—ukuqondanisa kwekristalu, ukwanda kokushisa, kanye nezakhiwo zikagesi—kubalulekile ekwakheni amadivayisi asebenza kahle kakhulu, ukushintsha okusheshayo, kanye nokonga amandla okukhulu.

Lesi sihloko sichaza ukuthi ama-substrates kanye nobuchwepheshe be-epitaxial busebenza kanjani, ukuthi kungani kubalulekile, nokuthi bubumba kanjani ikusasa lezinto ze-semiconductor ezifanaI-Si, i-GaN, i-GaAs, i-sapphire, ne-SiC.

1. Kuyini i-I-Substrate ye-semiconductor?

I-substrate "ipulatifomu" eyodwa yekristalu lapho kwakhiwe khona idivayisi. Inikeza ukwesekwa kwesakhiwo, ukushabalalisa ukushisa, kanye nethempulethi ye-athomu edingekayo ekukhuleni kwe-epitaxial esezingeni eliphezulu.

Imisebenzi Eyinhloko Ye-Substrate

• Ukusekelwa kwemishini:Iqinisekisa ukuthi idivayisi ihlala izinzile ngokwesakhiwo ngesikhathi sokucubungula nokusebenza.

• Ithempulethi yekristalu:Iqondisa ungqimba lwe-epitaxial ukuze lukhule ngama-lattice e-athomu aqondile, okunciphisa amaphutha.

• Indima kagesi:Ingaqhuba ugesi (isb., Si, SiC) noma isebenze njengesivikelo (isb., isafire).

Izinto Ezivamile Ze-Substrate

Indlela Ama-Substrate Akhiqizwa Ngayo

1. Ukuhlanzwa kwezinto:I-silicon noma ezinye izinto ezihlanganisiwe zicwengisiswa zibe msulwa kakhulu.

2. Ukukhula kwekristalu elilodwa:

   • IsiCzochralski (CZ)- indlela evame kakhulu ye-silicon.

   • Indawo Yokuntanta (FZ)– ikhiqiza amakristalu acwengekile kakhulu.

3. Ukusikwa nokupholishwa kwe-wafer:Ama-boule anqunywa abe ama-wafer bese epholishwa ukuze abe bushelelezi.

4. Ukuhlanza nokuhlola:Ukususa ukungcola nokuhlola ubuningi beziphambeko.

Izinselele Zobuchwepheshe

Ezinye izinto ezithuthukisiwe—ikakhulukazi i-SiC—kunzima ukuzikhiqiza ngenxa yokukhula kwekristalu okuhamba kancane kakhulu (kuphela u-0.3–0.5 mm/ihora), izidingo zokulawula izinga lokushisa eziqinile, kanye nokulahlekelwa okukhulu kokusikwa (ukulahlekelwa yi-SiC kerf kungafinyelela ku->70%). Lokhu kuyinkimbinkimbi kungesinye sezizathu ezenza izinto zesizukulwane sesithathu zihlale zibiza kakhulu.

2. Iyini Ingqimba Ye-Epitaxial?

Ukukhulisa ungqimba lwe-epitaxial kusho ukufaka ifilimu elincane, elihlanzekile kakhulu, elinekristalu elilodwa ku-substrate elinokuqondisa okuqondile kwe-lattice.

Ingqimba ye-epitaxial inqumaukuziphatha kukagesiyedivayisi yokugcina.

Kungani i-Epitaxy Ibalulekile

• Kwandisa ubumsulwa bekristalu

• Inika amandla amaphrofayili e-doping enziwe ngokwezifiso

• Kunciphisa ukusabalala kwezinkinga ze-substrate

• Yakha izakhiwo ezihlukile ezakhiwe ngendlela efana nemithombo ye-quantum, ama-HEMT, kanye nama-superlattice

Ubuchwepheshe Obuyinhloko be-Epitaxy

Amapharamitha Abalulekile ku-Epitaxy

• Ubukhulu besendlalelo:Ama-nanometer emithombo ye-quantum, afinyelela ku-100 μm kumadivayisi kagesi.

• Ukuphuza izidakamizwa:Ilungisa ukuhlushwa komthwali ngokusebenzisa ukungeniswa okunembile kokungcola.

• Ikhwalithi yesixhumi esibonakalayo:Kumelwe kuncishiswe ukuhlukana nokucindezeleka okuvela ekungahambelani kwe-lattice.

Izinselele ku-Heteroepitaxy

• Ukungafani kwe-lattice:Isibonelo, ukungafani kwe-GaN ne-sapphire ngo-~13%.

• Ukungafani kokukhula kokushisa:Kungabangela ukuqhekeka ngesikhathi sokupholisa.

• Ukulawula amaphutha:Kudinga izendlalelo ze-buffer, izendlalelo ezilinganisiwe, noma izendlalelo ze-nucleation.

3. Indlela i-Substrate ne-Epitaxy Ezisebenzisana Ngayo: Izibonelo Zomhlaba Wangempela

I-GaN LED ku-Sapphire

• I-Sapphire ayibizi kakhulu futhi iyavikela.

• Izendlalelo ze-buffer (i-AlN noma i-GaN esezingeni eliphansi lokushisa) zinciphisa ukungalingani kwe-lattice.

• Imithombo ye-multi-quantum (InGaN/GaN) yakha indawo ekhipha ukukhanya okusebenzayo.

• Ifinyelela ubuningi beziphambeko obungaphansi kuka-10⁸ cm⁻² kanye nokusebenza kahle okuphezulu kokukhanya.

I-SiC Power MOSFET

• Isebenzisa ama-substrate angu-4H-SiC anekhono eliphezulu lokuqhekeka.

• Izendlalelo ze-Epitaxial drift (10–100 μm) zinquma isilinganiso se-voltage.

• Inikeza ukulahlekelwa komoya okungaphansi kuka-90% kunamadivayisi kagesi e-silicon.

Amadivayisi e-RF e-GaN-on-Silicon

• Izingxenye ze-silicon zinciphisa izindleko futhi zivumela ukuhlanganiswa ne-CMOS.

• Izingqimba ze-AlN nucleation kanye nama-buffer aklanywe ngobunjiniyela alawula ukucindezeleka.

• Isetshenziselwa ama-chip e-5G PA asebenza kumaza e-millimeter-wave.

4. I-Substrate vs. Epitaxy: Umehluko Omkhulu

5. Lapho Lezi Zinbuchwepheshe Ziya Khona

Usayizi Omkhulu We-Wafer

• Ukushintsha kube yi-intshi eziyi-12

• I-SiC isuka ku-6-inch iye ku-8-inch (ukunciphisa okukhulu kwezindleko)

• Ububanzi obukhulu buthuthukisa ukuphuma kwamandla futhi kunciphisa izindleko zedivayisi

I-Heteroepitaxy Engabizi Kakhulu

I-GaN-on-Si kanye ne-GaN-on-saphire ziyaqhubeka nokuthola ukuthandwa njengezindlela ezingcono kunezingqimba ze-GaN ezibizayo.

Izindlela Zokusika Nokukhulisa Ezithuthukisiwe

• Ukusikwa okuqhekekile okubandayo kunganciphisa ukulahleka kwe-SiC kerf kusuka ku-~75% kuya ku-~50%.

• Imiklamo yesithando somlilo esithuthukisiwe ikhulisa ukukhiqizwa kwe-SiC kanye nokufana.

Ukuhlanganiswa Kwemisebenzi Yokukhanya, Amandla, kanye Ne-RF

I-Epitaxy ivumela imithombo ye-quantum, ama-superlattice, kanye nezendlalelo ezicindezelwe ezibalulekile kuma-photonics ahlanganisiwe esikhathi esizayo kanye nama-electronics asebenza kahle kakhulu.

Isiphetho

Ama-substrate kanye ne-epitaxy kwakha umgogodla wezobuchwepheshe wama-semiconductors anamuhla. I-substrate isetha isisekelo esingokwenyama, esishisayo, nesikristalu, kuyilapho ungqimba lwe-epitaxial luchaza imisebenzi kagesi evumela ukusebenza kwedivayisi okuthuthukile.

Njengoba isidingo sikhulaamandla aphezulu, imvamisa ephezulu, kanye nokusebenza kahle okuphezuluizinhlelo—kusukela ezimotweni zikagesi kuya ezikhungweni zedatha—lobu buchwepheshe obubili buzoqhubeka nokukhula ndawonye. Ukusungula izinto ezintsha ngobukhulu be-wafer, ukulawulwa kwamaphutha, i-heteroepitaxy, kanye nokukhula kwekristalu kuzokwakha isizukulwane esilandelayo sezinto ze-semiconductor kanye nezakhiwo zamadivayisi.