Ama-semiconductor asebenza njengesisekelo sesikhathi solwazi, lapho ukuphindaphinda ngakunye kwezinto kuchazwa kabusha imingcele yobuchwepheshe babantu. Kusukela kuma-semiconductor esizukulwane sokuqala asekelwe ku-silicon kuya ezintweni ze-bandgap zesizukulwane sesine ezibanzi kakhulu zanamuhla, yonke intuthuko yokuziphendukela kwemvelo iholele ekuthuthukisweni kokushintshashintsha kwezokuxhumana, amandla, kanye nekhompyutha. Ngokuhlaziya izici kanye nomqondo wokuguquka kwesizukulwane wezinto ze-semiconductor ezikhona, singabikezela iziqondiso ezingaba khona zama-semiconductor esizukulwane sesihlanu ngenkathi sihlola izindlela zamasu zaseShayina kule ndawo yokuncintisana.
I. Izici kanye Nomqondo Wokuziphendukela Kwemvelo Wezizukulwane Ezine Ze-Semiconductor
Ama-Semiconductor esizukulwane sokuqala: Isikhathi se-Silicon-Germanium Foundation
Izici: Ama-semiconductor ayisisekelo njenge-silicon (Si) kanye ne-germanium (Ge) anikeza ukusebenza kahle kwezindleko kanye nezinqubo zokukhiqiza ezivuthiwe, kodwa ahlushwa yizikhala ezincane (Si: 1.12 eV; Ge: 0.67 eV), ukubekezelelana kwamandla kagesi okukhawulela kanye nokusebenza kwemvamisa ephezulu.
Izicelo: Amasekethe ahlanganisiwe, amaseli elanga, amadivayisi ane-voltage ephansi/i-frequency ephansi.
Umshayeli Wokuguquka: Isidingo esikhulayo sokusebenza kwemvamisa ephezulu/kwezinga lokushisa eliphezulu kuma-optoelectronics sidlule amakhono e-silicon.
Ama-Semiconductor esizukulwane sesibili: I-III-V Compound Revolution
Izici: Ama-compound e-III-V afana ne-gallium arsenide (GaAs) kanye ne-indium phosphide (InP) anezikhala ezibanzi (GaAs: 1.42 eV) kanye nokuhamba okuphezulu kwama-electron kwe-RF kanye nezinhlelo zokusebenza ze-photonic.
Izicelo: Amadivayisi e-5G RF, ama-diode e-laser, ukuxhumana kwesathelayithi.
Izinselele: Ukuntuleka kwezinto ezibonakalayo (ubuningi be-indium: 0.001%), izakhi ezinobuthi (i-arsenic), kanye nezindleko zokukhiqiza eziphakeme.
Umshayeli Wokushintsha: Izinhlelo zokusebenza zamandla/amandla zidinga izinto ezine-voltage ephezulu yokuqhekeka.
Ama-Semiconductor esizukulwane sesithathu: I-Wide Bandgap Energy Revolution
Izici: I-Silicon carbide (SiC) kanye ne-gallium nitride (GaN) ziletha ama-bandgaps >3eV (SiC:3.2eV; GaN:3.4eV), enokushisa okuphezulu kanye nezici zemvamisa ephezulu.
Izinhlelo zokusebenza: Izitimela zamandla ze-EV, ama-inverter e-PV, ingqalasizinda ye-5G.
Izinzuzo: Ukonga amandla okungu-50%+ kanye nokunciphisa usayizi okungu-70% uma kuqhathaniswa ne-silicon.
Umshayeli Wokushintsha: Ukubalwa kwe-AI/quantum kudinga izinto ezinezilinganiso zokusebenza ezisezingeni eliphezulu.
Ama-Semiconductor esizukulwane sesine: I-Ultra-Wide Bandgap Frontier
Izici: I-Gallium oxide (Ga₂O₃) kanye nedayimane (C) kufinyelela kuma-bandgaps afinyelela ku-4.8eV, okuhlanganisa ukumelana okuphansi kakhulu nokubekezelelana kwe-voltage yeklasi le-kV.
Izinhlelo zokusebenza: Ama-IC anamandla aphezulu kakhulu, ama-deep-UV detectors, ukuxhumana kwe-quantum.
Ukuphumelela: Amadivayisi e-Ga₂O₃ amelana ne->8kV, okwandisa ukusebenza kahle kwe-SiC kathathu.
I-Evolutionary Logic: Kudingeka ukukhuphuka kokusebenza kwe-quantum ukuze kunqotshwe imingcele engokwenyama.
I. Amathrendi e-Semiconductor esizukulwane sesihlanu: Izinto ze-Quantum kanye nezakhiwo ze-2D
Izimbangela zokuthuthukiswa okungenzeka zifaka:
1. Izivikeli Zokushisa Eziphezulu: Ukuhanjiswa komhlaba nge-insulation enkulu kwenza kube lula ukulahla izinto zikagesi.
2. Izinto ze-2D: I-Graphene/MoS₂ inikeza impendulo yemvamisa ye-THZ kanye nokuhambisana kwe-elekthronikhi okuguquguqukayo.
3. Amachashazi e-Quantum namakristalu e-Photonic: Ubunjiniyela be-Bandgap buvumela ukuhlanganiswa kwe-optoelectronic-thermal.
4. Ama-Bio-Semiconductor: Izinto ezizihlanganisayo ezisekelwe ku-DNA/protein ezihlanganisa i-biology kanye ne-electronics.
5. Izinto Ezibalulekile Ezishukumisayo: I-AI, ukuxhumana kobuchopho nekhompyutha, kanye nezidingo ze-superconductivity yokushisa kwegumbi.
II. Amathuba Okuqhuba I-Semiconductor eShayina: Kusukela Kumlandeli Kuya Kumholi
1. Ukuthuthukiswa Kobuchwepheshe
• Isizukulwane sesi-3: Ukukhiqizwa ngobuningi kwama-substrate e-SiC angu-8-intshi; ama-SiC MOSFET ebanga lezimoto ezimotweni ze-BYD
• Isizukulwane sesi-4: Ukuthuthukiswa kwe-epitaxy ye-Ga₂O₃ engamasentimitha angu-8 yi-XUPT ne-CETC46
2. Ukusekelwa Kwenqubomgomo
• Uhlelo Lweminyaka Emihlanu lwe-14 lubeka phambili ama-semiconductor esizukulwane sesithathu
• Izimali zezimboni zezifundazwe eziyizigidigidi zama-yuan zasungulwa
• Ama-factory amadivayisi e-GaN angu-6-8 intshi kanye nama-transistors e-Ga₂O₃ afakwe phakathi kwentuthuko yezobuchwepheshe eyi-10 ephezulu ngo-2024
III. Izinselele kanye nezixazululo zamasu
1. Izithiyo Zobuchwepheshe
• Ukukhula Kwekristalu: Isivuno esiphansi sama-boule amakhulu (isb., ukuqhekeka kwe-Ga₂O₃)
• Izindinganiso Zokuthembeka: Ukuntuleka kwezinqubo ezimisiwe zokuhlolwa kokuguga okunamandla aphezulu/okuvame kakhulu
2. Izikhala Zochungechunge Lokuphakelwa
• Imishini: <20% okuqukethwe kwasekhaya kwabalimi bekristalu le-SiC
• Ukwamukelwa: Ukukhethwa okuphansi kwezingxenye ezingenisiwe
3. Izindlela Ezihlelekile
• Ukubambisana Kwezimboni Nezemfundo: Kwenziwe ngendlela ethi “Third-Gen Semiconductor Alliance”
• Ukugxila Kwe-Niche: Beka phambili ukuxhumana kwe-quantum/izimakethe ezintsha zamandla
• Ukuthuthukiswa Kwamathalente: Sungula izinhlelo zemfundo ze-“Chip Science & Engineering”
Kusukela ku-silicon kuya ku-Ga₂O₃, ukuziphendukela kwemvelo kwe-semiconductor kulandelela ukunqoba kwesintu phezu kwemingcele engokwenyama. Ithuba laseShayina lisekuqondeni izinto zesizukulwane sesine ngenkathi liqala izinto ezintsha zesizukulwane sesihlanu. Njengoba i-Academician uYang Deren ephawulile: “Ukusungula izinto ezintsha kwangempela kudinga ukwakha izindlela ezingahanjwa.” Ukusebenzisana kwenqubomgomo, imali kanye nobuchwepheshe kuzonquma ikusasa le-semiconductor laseShayina.
I-XKH ivele njengomhlinzeki wezixazululo ezihlanganisiwe ngokuqondile ogxile ezintweni ze-semiconductor ezithuthukisiwe kuzo zonke izizukulwane zobuchwepheshe. Ngamakhono ayisisekelo ahlanganisa ukukhula kwekristalu, ukucubungula ngokunemba, kanye nobuchwepheshe bokumboza obusebenzayo, i-XKH iletha ama-substrates asebenza kahle kakhulu kanye nama-wafer e-epitaxial ezinhlelo zokusebenza ezisezingeni eliphezulu kuma-elekthronikhi kagesi, ukuxhumana kwe-RF, kanye nezinhlelo ze-optoelectronic. Indawo yethu yokukhiqiza ihlanganisa izinqubo ezizimele zokukhiqiza ama-wafer e-silicon carbide angu-4-8 intshi kanye nama-wafer e-gallium nitride anokulawula okuphambili embonini, ngenkathi igcina izinhlelo ze-R&D ezisebenzayo ezintweni ezisafufusa ze-bandgap ezihlanganisa ama-semiconductor e-gallium oxide kanye nama-diamond. Ngokubambisana okunesu nezikhungo zocwaningo ezihamba phambili kanye nabakhiqizi bemishini, i-XKH ithuthukise ipulatifomu yokukhiqiza eguquguqukayo ekwazi ukusekela kokubili ukukhiqizwa kwemikhiqizo ejwayelekile ngobuningi kanye nokuthuthukiswa okukhethekile kwezixazululo zezinto ezenziwe ngokwezifiso. Ubuchwepheshe be-XKH bugxile ekubhekaneni nezinselele ezibalulekile embonini njengokuthuthukisa ukufana kwe-wafer yamadivayisi kagesi, ukuthuthukisa ukuphathwa kokushisa kuzinhlelo zokusebenza ze-RF, kanye nokuthuthukisa izakhiwo ezintsha zamadivayisi e-photonic esizukulwane esilandelayo. Ngokuhlanganisa isayensi yezinto ezibonakalayo ethuthukisiwe namakhono obunjiniyela obunembile, i-XKH ivumela amakhasimende ukuthi anqobe imikhawulo yokusebenza ezinhlelweni zokusebenza ezivame kakhulu, ezinamandla aphezulu, kanye nezemvelo eziyingozi ngenkathi isekela ukuguqukela kwemboni ye-semiconductor yasekhaya ekuzimeleni okukhulu kweketanga lokuphakelwa.
Okulandelayo yi-XKH's 12inchs sapphire wafer kanye ne-12inch SiC substrate:
Isikhathi sokuthunyelwe: Juni-06-2025