Ama-semiconductors asebenza njengesisekelo senkathi yolwazi, ngokuphindaphinda kwezinto ezibonakalayo kuchaza kabusha imingcele yobuchwepheshe babantu. Kusukela kuma-semiconductors asuselwa ku-silicon esizukulwaneni sokuqala kuya kwesesizukulwaneni sesine sezinto ezisetshenziswayo ze-ultra-wide bandgap, konke ukugxuma kokuziphendukela kwemvelo kuqhubekisele phambili intuthuko kwezokuxhumana, amandla, kanye nekhompyutha. Ngokuhlaziya izici kanye nelogiji yoshintsho olwenziwayo lwezinto ezikhona ze-semiconductor, singabikezela izikhombisi-ndlela ezingaba khona zama-semiconductors esizukulwane sesihlanu kuyilapho sihlola izindlela zamasu zase-China kule nkundla yokuncintisana.
I. Izimpawu kanye Nomqondo Wenguquko wezizukulwane ezine zamaSemiconductor
AmaSemiconductors Esizukulwane Sokuqala: I-Silicon-Germanium Foundation Era
Izici: Ama-semiconductors e-Elemental afana ne-silicon (Si) ne-germanium (Ge) anikeza ukusebenza ngempumelelo kwezindleko nezinqubo zokukhiqiza ezivuthiwe, kodwa ahlushwa ama-bandgep amancane (Si: 1.12 eV; Ge: 0.67 eV), ukukhawulela ukubekezelela i-voltage kanye nokusebenza kwefrikhwensi ephezulu.
Izinhlelo zokusebenza: Amasekhethi ahlanganisiwe, amaseli elanga, amadivaysi ane-low-voltage/low-frequency.
I-Transition Driver: Isidingo esikhulayo sokusebenza kwe-high-frequency/high-temperature kuma-optoelectronics adlula amandla e-silicon.
AmaSemiconductors esizukulwane sesibili: I-III-V Compound Revolution
Izici: Izinhlanganisela ze-III-V ezifana ne-gallium arsenide (GaAs) ne-indium phosphide (InP) afaka ama-bandgap abanzi (GaAs: 1.42 eV) nokuhamba kwama-electron aphezulu ku-RF nezinhlelo zokusebenza ze-photonic.
Izicelo: Amadivayisi we-5G RF, ama-laser diode, ukuxhumana ngesathelayithi.
Izinselele: Ukushoda kwezinto (inala ye-idium: 0.001%), izakhi ezinobuthi (i-arsenic), nezindleko zokukhiqiza eziphezulu.
I-Transition Driver: Izinhlelo zokusebenza zamandla/zamandla zifuna izinto ezinamandla okuqhekeka okuphezulu.
I-Semiconductors Yesizukulwane Sesithathu: I-Wide Bandgap Energy Revolution
Izici: I-Silicon carbide (SiC) kanye ne-gallium nitride (GaN) ziletha ama-bandgap >3eV (SiC:3.2eV; GaN:3.4eV), ene-thermal conductivity ephakeme kanye nezici ze-high-frequency.
Izicelo: I-EV powertrains, i-PV inverters, ingqalasizinda ye-5G.
Izinzuzo: 50%+ ukonga amandla kanye no-70% wokunciphisa usayizi uma kuqhathaniswa ne-silicon.
I-Transition Driver: I-AI/quantum computing idinga izinto zokwakha ezinamamethrikhi okusebenza ngokwedlulele.
AmaSemiconductors esizukulwane sesine: I-Ultra-Wide Bandgap Frontier
Izici: I-Gallium oxide (Ga₂O₃) nedayimane (C) zithola ama-bandgap afika ku-4.8eV, ahlanganisa ukumelana ne-ultra-low on-resistant ne-kV-class voltage tolerance.
Izinhlelo zokusebenza: Ama-ICs e-Ultra-high-voltage, izitholi ezijulile ze-UV, ukuxhumana kwe-quantum.
Ukuphumelela: Amadivayisi we-Ga₂O₃ amelana > no-8kV, ukusebenza kahle kwe-SiC okuphindwe kathathu.
I-Evolutionary Logic: Ukweqa kokusebenza kwesikali se-quantum kuyadingeka ukuze kunqobe imikhawulo yomzimba.
I. Fifth-Generation Semiconductor Trends: Quantum Materials & 2D Architectures
Ama-vector okuthuthukiswa okungenzeka afaka:
1. I-Topological Insulators: I-Surface conduction ene-insulation eyinqwaba yenza ama-electronics angalahleki.
2. Izinto ze-2D: I-Graphene/MoS₂ inikeza impendulo ye-THz-frequency kanye nokuhambisana okuguquguqukayo kwe-electronics.
3. Amachashazi e-Quantum & Amakristalu e-Photonic: Ubunjiniyela be-Bandgap buvumela ukuhlanganiswa kwe-optoelectronic-thermal.
4. Ama-Bio-Semiconductors: I-DNA/iphrotheni-based self-assembling materials bridge biology and electronics.
5. Abashayeli Ababalulekile: I-AI, ukuxhumana kobuchopho nekhompiyutha, kanye nezimfuno zezinga lokushisa eliphakeme legumbi.
II. Amathuba E-Semiconductor YaseChina: Ukusuka Kumlandeli Kuya Kumholi
1. Ukuphumelela Kwezobuchwepheshe
• I-3rd-Gen: Ukukhiqizwa okuningi kwama-substrates e-SiC angu-8-intshi; i-automotive-grade SiC MOSFETs ezimotweni ze-BYD
• 4th-Gen: 8-inch Ga₂O₃ epitaxy epitaxy nge-XUPT ne-CETC46
2. Ukusekelwa Kwenqubomgomo
• Uhlelo Lweminyaka Eyi-14 Lweminyaka Emihlanu lubeka phambili ama-semiconductors e-3rd-gen
• Kusungulwe izimali zezimboni zesifundazwe eziyikhulu lezigidigidi zamayuan
• Amadivayisi we-Milestones 6-8 inch GaN nama-transistors e-Ga₂O₃ afakwe ohlwini phakathi kwentuthuko ephezulu eyi-10 ngo-2024
III. Izinselele kanye Nezixazululo Zamasu
1. I-Technical Bottlenecks
• I-Crystal Growth: Isivuno esiphansi sama-boules anobubanzi obukhulu (isb, ukuqhekeka kwe-Ga₂O₃)
• Amazinga Okuthembeka: Ukushoda kwezimiso eziyisisekelo zokuhlola ukuguga kwamandla aphezulu/imvamisa ephezulu
2. Izikhala ze-Supply Chain
• Izisetshenziswa: <20% okuqukethwe kwasekhaya kubalimi be-SiC crystal
• Ukutholwa: Okuncanyelwayo komfula ongezansi kwezingxenye ezingenisiwe
3. Izindlela Zamasu
• Ukusebenzisana Kwemboni Nezemfundo: Kufaniswe “I-Third-Gen Semiconductor Alliance”
• I-Niche Focus: Beka kuqala ukuxhumana kwe-quantum/izimakethe zamandla amasha
• Ukuthuthukiswa Kwamathalenta: Sungula izinhlelo zezemfundo “ze-Chip Science & Engineering”
Kusukela ku-silicon kuya ku-Ga₂O₃, i-semiconductor evolution ilandisa ngokunqoba komuntu phezu kwemikhawulo engokwenyama. Ithuba laseShayina lisekwazini kahle izinto zesizukulwane sesine ngenkathi ivula indlela emisha yesizukulwane sesihlanu. Njengoba isazi SezeMfundo uYang Deren aphawula: “Ukusungula izinto ezintsha kwangempela kudinga ukwakhiwa kwezindlela ezingakaze zihanjwe.” Ukubambisana kwenqubomgomo, imali, kanye nobuchwepheshe kuzonquma ikusasa le-semiconductor yaseChina.
I-XKH ivele njengomhlinzeki wezixazululo ohlanganiswe mpo osebenza ngokukhethekile ezintweni ezithuthukisiwe ze-semiconductor ezizukulwaneni eziningi zobuchwepheshe. Ngamakhono abalulekile ahlanganisa ukukhula kwekristalu, ukucubungula ukunemba, nobuchwepheshe bokuhlanganisa obusebenzayo, i-XKH iletha ama-substrates asebenza kahle kakhulu nama-epitaxial wafers ukuze asetshenziswe ezisezingeni eliphezulu kugesi wamandla, ezokuxhumana ze-RF, nezinhlelo ze-optoelectronic. I-ecosystem yethu yokukhiqiza ihlanganisa izinqubo zobunikazi zokukhiqiza ama-4-8 inch silicon carbide nama-gallium nitride wafers anokulawula amaphutha okuhamba phambili embonini, kuyilapho kugcinwa izinhlelo ezisebenzayo ze-R&D ezintweni ezivelayo ze-bandgap ezibanzi ezihlanganisa i-gallium oxide nama-semiconductors edayimane. Ngokubambisana kwamasu nezikhungo zocwaningo ezihamba phambili nabakhiqizi bemishini, i-XKH isungule inkundla yokukhiqiza evumelana nezimo ekwazi ukusekela ukukhiqizwa kwevolumu ephezulu kwemikhiqizo esezingeni kanye nokuthuthukiswa okukhethekile kwezisombululo zezinto ezingokwezifiso. Ubungcweti bezobuchwepheshe be-XKH bugxile ekubhekaneni nezinselele ezibalulekile zemboni ezifana nokuthuthukisa ukufana kwe-wafer kumadivayisi kagesi, ukuthuthukisa ukuphathwa kwe-thermal ezinhlelweni ze-RF, nokuthuthukisa ama-heterostructures anoveli esizukulwane esilandelayo semishini yezithombe. Ngokuhlanganisa isayensi yezinto ezithuthukisiwe namandla obunjiniyela obunemba, i-XKH inika amandla amakhasimende ukuthi anqobe imikhawulo yokusebenza kuma-high-frequency, amandla aphezulu, kanye nezinhlelo zokusebenza zemvelo ezeqisayo kuyilapho isekela uguquko lwemboni ye-semiconductor yasekhaya ekuzimeleni okukhulu kwe-supply chain.
Okulandelayo yi-XKH's 12inchsapphire wafer & 12inch SiC substrate:
Isikhathi sokuthumela: Jun-06-2025