Ngokwasemuva kwenguquko ye-AI, izibuko ze-AR kancane kancane zingena ekwazisweni komphakathi. Njengepharadigm ehlanganisa ngaphandle komthungo imihlaba ebonakalayo nengokoqobo, izibuko ze-AR ziyahluka kumadivayisi e-VR ngokuvumela abasebenzisi ukuthi babone kokubili izithombe ezivezwa ngedijithali kanye nokukhanya kwemvelo okuzungezile ngesikhathi esisodwa. Ukuze kuzuzwe lokhu kusebenza okumbaxambili—ukufaka izithombe ze-microdisplay emehlweni kuyilapho kugcinwa ukuhanjiswa kokukhanya kwangaphandle—izibuko ze-AR ezisekelwe ku-optical-grade silicon carbide (SiC) zisebenzisa i-architecture ye-waveguide (lightguide). Lo mklamo unikeza amandla ukuboniswa okuphelele kwangaphakathi ukuze kudluliselwe izithombe, ezifana nokudluliswa kwe-fiber optical, njengoba kuboniswe kumdwebo wohlelo.
Ngokuvamile, indawo engaphansi eyodwa engama-intshi angu-6-intshi ephezulu ye-semi-insulating ingaveza amapheya angu-2 ezingilazi, kuyilapho i-substrate engamayintshi angu-8 ithatha amapheya angu-3–4. Ukwamukelwa kwezinto ze-SiC kunikeza izinzuzo ezintathu ezibalulekile:
- Inkomba ye-refractive eyingqayizivele (2.7): Inika amandla >80° inkambu yokubuka enombala ogcwele (i-FOV) ngelensi eyodwa, isusa ama-artifacts othingo oluvamile kumadizayini avamile we-AR.
- Integrated tri-color (RGB) waveguide: Ingena esikhundleni sezitaki ze-waveguide zezendlalelo eziningi, yehlisa usayizi wedivayisi nesisindo.
- I-Superior thermal conductivity (490 W/m·K): Inciphisa ukunqwabelana kokushisa okubangelwa ukuwohloka kwamehlo.
Lokhu kufaneleka kuqhubekisele phambili isidingo esiqinile semakethe sezingilazi ze-AR ezisekelwe ku-SiC. I-Optical-grade SiC esetshenziswayo ngokuvamile iqukethe amakristalu e-high-purity semi-insulating (HPSI), izidingo zawo zokulungiselela eziqinile ezinomthelela ezindlekweni eziphezulu zamanje. Ngakho-ke, ukuthuthukiswa kwama-substrates e-HPSI SiC kubalulekile.
1. Ukuhlanganiswa Kwe-Semi-Insulating SiC Powder
Ukukhiqizwa kwezinga lemboni ikakhulukazi kusebenzisa i-high-temperature self-propagating synthesis (SHS), inqubo efuna ukulawula okucophelelayo:
- Izinto zokusetshenziswa: 99.999% izimpushana ze-carbon/silicon ezihlanzekile ezinosayizi wezinhlayiyana ezingu-10–100 μm.
- I-Crucible pureness: Izingxenye ze-graphite zihlanzwa izinga lokushisa eliphezulu ukuze kuncishiswe ukusakazeka kokungcola kwensimbi.
- Ukulawulwa komkhathi: I-6N-purity argon (enezihlanzi ezisemgqeni) icindezela ukufakwa kwe-nitrogen; ukulandelela amagesi e-HCl/H₂ angase ethulwe ukuze avuse izinhlanganisela ze-boron futhi anciphise i-nitrogen, nakuba ukugxila kwe-H₂ kudinga ukuthuthukiswa ukuze kuvinjelwe ukugqwala kwegraphite.
- Amazinga wezisetshenziswa: Amafurnace e-synthesis kufanele afinyelele i-<10⁻⁴ Pa base vacuum, ngamaphrothokholi aqinile okuhlola ukuvuza.
2. Izinselele Zokukhula Kwekristalu
Ukukhula kwe-HPSI SiC kwabelana ngezidingo ezifanayo zokuhlanzeka:
- I-Feedstock: 6N+-purity SiC powder ene-B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O ngezansi kwemikhawulo, nezinsimbi ze-alkali ezincane (Na/K).
- Amasistimu wegesi: I-6N argon/hydrogen blends ithuthukisa ukumelana.
- Izisetshenziswa: Amaphampu e-molecular aqinisekisa i-ultrahigh vacuum (<10⁻⁶ Pa); Ukwelashwa kwangaphambi kwe-crucible kanye nokuhlanzwa kwe-nitrogen kubalulekile.
I-Substrate Processing Innovations
Uma kuqhathaniswa ne-silicon, imijikelezo yokukhula ende ye-SiC kanye nengcindezi yemvelo (okubangela ukuqhekeka/ukuqhekeka komphetho) kudinga ukucutshungulwa okuthuthukile:
- Ukusika i-laser: Kwenyusa isivuno kusuka kumawafa angama-30 (350 μm, isaha locingo) kuya kuma-wafer angama-50 ngebhowule ngalinye elingu-20-mm, anamandla okuncipha okungu-200-μm. Isikhathi sokucubungula siyehla sisuka ezinsukwini eziyi-10–15 (isaha locingo) siye ku-<20 min/wafer ngamakristalu angama-intshi angu-8.
3. Ukusebenzisana Kwezimboni
Ithimba le-Meta's Orion lisungule ukwamukelwa kwe-waveguide ye-Optical-grade SiC, likhuthaze ukutshalwa kwezimali kwe-R&D. Ubambiswano olubalulekile luhlanganisa:
- I-TankeBlue & MUDI Micro: Ukuthuthukiswa okuhlangene kwamalensi e-waveguide e-AR ahlukanisiwe.
- I-Jingsheng Mech, i-Longqi Tech, i-XREAL, ne-Kunyou Optoelectronics: Umfelandawonye wamasu wokuhlanganiswa kochungechunge lokuhlinzekwa kwe-AI/AR.
Ukuqagela kwemakethe kulinganisela amayunithi angama-500,000 asuselwa ku-SiC njalo ngonyaka ngo-2027, adla ama-substrates angu-250,000 6-inch (noma 125,000 8-inch). Le trajectory igcizelela indima yokuguqula ye-SiC ku-AR optics yesizukulwane esilandelayo.
I-XKH ikhethekile ekuhlinzekeni ama-SiC substrates ekhwalithi ephezulu ye-4H-semi-insulating (4H-SEMI) anomadayamitha enziwa ngendlela oyifisayo ukusuka ku-2-intshi ukuya ku-8-intshi, enzelwe ukuhlangabezana nezidingo ezithile zohlelo lokusebenza ku-RF, amandla kagesi, ne-AR/VR optics. Amandla ethu ahlanganisa ukunikezwa kwevolumu okuthembekile, ukwenza ngokwezifiso ukunemba (ukuqina, ukuma, ukuphela kwendawo), nokucubungula okugcwele kwangaphakathi kwendlu kusuka ekukhuleni kwekristalu kuya ekucwebezeni. Ngale kwe-4H-SEMI, siphinde sinikeze uhlobo lwe-4H-N, uhlobo lwe-4H/6H-P-P, nama-substrates angu-3C-SiC, asekela ama-semiconductor ahlukahlukene kanye nama-optoelectronic innovations.
Isikhathi sokuthumela: Aug-08-2025