Shintsha Izinto Zokushabalalisa Ukushisa! Isidingo Se-Silicon Carbide Substrate Sisethelwe Ukuqhuma!

Okuqukethwe

1. I-Bottleneck Yokushabalalisa Ukushisa kuma-AI Chips kanye Nokuthuthuka Kwezinto Ze-Silicon Carbide​

2. Izici kanye nezinzuzo zobuchwepheshe ze-Silicon Carbide Substrates​

3. Amasu Ahlelekile kanye Nokuthuthukiswa Okusebenzisana yi-NVIDIA kanye ne-TSMC​

4.​​Indlela Yokusebenzisa kanye Nezinselele Eziyinhloko Zobuchwepheshe​​

5.​​Amathemba Emakethe Nokwanda Kwamandla​

6. Umthelela ku-Supply Chain kanye nokusebenza kwezinkampani ezihlobene​

7.​​Izicelo Ezibanzi kanye Nosayizi Wemakethe Ophelele we-Silicon Carbide​​

8. Izixazululo Ze-XKH Ezenziwe Ngokwezifiso Nokusekelwa Komkhiqizo​

Inkinga yokushabalalisa ukushisa kwama-AI chips esikhathi esizayo inqotshwa yizinto zokwakha i-silicon carbide (SiC).

Ngokusho kwemibiko yabezindaba bakwamanye amazwe, i-NVIDIA ihlela ukufaka esikhundleni sezinto ezingaphansi kwesisekelo esiphakathi enkambisweni yokupakisha ethuthukisiwe ye-CoWoS yamaprosesa ayo esizukulwane esilandelayo nge-silicon carbide. I-TSMC imeme abakhiqizi abakhulu ukuthi bathuthukise ubuchwepheshe bokukhiqiza bezingxenye ezingaphansi kwesisekelo ze-SiC eziphakathi.

Isizathu esiyinhloko ukuthi ukuthuthukiswa kokusebenza kwama-chip e-AI amanje kuhlangabezane nokulinganiselwa ngokomzimba. Njengoba amandla e-GPU enyuka, ukuhlanganisa ama-chip amaningi kuma-interposer e-silicon kudala izidingo eziphezulu kakhulu zokushabalalisa ukushisa. Ukushisa okukhiqizwa ngaphakathi kwama-chip kusondela emkhawulweni wawo, futhi ama-interposer e-silicon avamile awakwazi ukubhekana nale nselele ngempumelelo.

Amaprosesa e-NVIDIA Ashintsha Izinto Zokushabalalisa Ukushisa! Isidingo Se-Silicon Carbide Substrate Sisethelwe Ukuqhuma! I-Silicon carbide iyi-semiconductor ebanzi ye-bandgap, futhi izakhiwo zayo eziyingqayizivele zomzimba ziyinika izinzuzo ezibalulekile ezindaweni ezibucayi ezinamandla aphezulu kanye nokushisa okuphezulu. Ekupakisheni okuthuthukisiwe kwe-GPU, inikeza izinzuzo ezimbili eziyinhloko:

1. Amandla Okususa Ukushisa: Ukufaka esikhundleni se-silicon interposers ngama-SiC interposers kunganciphisa ukumelana nokushisa cishe ngo-70%.

2. Ukwakhiwa Kwamandla Okusebenzayo: I-SiC ivumela ukudalwa kwamamojula okulawula amandla amancane asebenza kahle, afinyeza kakhulu izindlela zokulethwa kwamandla, inciphisa ukulahlekelwa yisekethe, futhi inikeze izimpendulo zamanje ezisheshayo nezizinzile zemithwalo yokubala ye-AI.

Lolu shintsho luhlose ukubhekana nezinselele zokushabalalisa ukushisa okubangelwa ukwanda kwamandla e-GPU njalo, okuhlinzeka ngesisombululo esisebenza kahle kakhulu sama-chip ekhompyutha asebenza kahle kakhulu.

Ukushisa kwe-silicon carbide kuphakeme ngokuphindwe kabili-kathathu kune-silicon, okuthuthukisa ngempumelelo ukusebenza kahle kokuphathwa kokushisa kanye nokuxazulula izinkinga zokushabalalisa ukushisa kuma-chip anamandla aphezulu. Ukusebenza kwayo okuhle kakhulu kokushisa kunganciphisa izinga lokushisa lokuhlangana kwama-chip e-GPU ngo-20-30°C, okuthuthukisa kakhulu ukuzinza ezimweni zekhompyutha ephezulu.

Indlela Yokusebenzisa kanye Nezinselele

Ngokusho kwemithombo yochungechunge lokuhlinzeka, i-NVIDIA izosebenzisa lolu shintsho lwezinto ngezinyathelo ezimbili:

•​​2025-2026​: I-Rubin GPU yesizukulwane sokuqala isazosebenzisa ama-silicon interposer. I-TSMC imeme abakhiqizi abakhulu ukuthi bathuthukise ubuchwepheshe bokukhiqiza ama-SiC interposer ngokubambisana.

•​​2027​​: Ama-interposer e-SiC azohlanganiswa ngokusemthethweni enqubweni yokupakisha ethuthukisiwe.

Kodwa-ke, lolu hlelo lubhekene nezinselele eziningi, ikakhulukazi ezinqubweni zokukhiqiza. Ubulukhuni be-silicon carbide bufana nobedayimane, okudinga ubuchwepheshe bokusika obuphezulu kakhulu. Uma ubuchwepheshe bokusika bunganele, ubuso be-SiC bungaba amagagasi, okwenza bungasakwazi ukusetshenziswa ekupakisheni okuthuthukisiwe. Abakhiqizi bemishini njenge-DISCO yaseJapan basebenza ukuthuthukisa imishini emisha yokusika nge-laser ukubhekana nale nselele.

Amathemba Esikhathi Esizayo

Njengamanje, ubuchwepheshe be-SiC interposer buzoqala ukusetshenziswa kuma-chip e-AI athuthuke kakhulu. I-TSMC ihlela ukwethula i-CoWoS engu-7x reticle ngo-2027 ukuze ihlanganise amaprosesa amaningi kanye nememori, yandise indawo ye-interposer ibe ngu-14,400 mm², okuzothuthukisa isidingo esikhulu sama-substrate.

UMorgan Stanley ubikezela ukuthi umthamo wokupakisha we-CoWoS wanyanga zonke uzokhuphuka usuka kuma-wafer angu-38,000 angu-12-intshi ngo-2024 uye ku-83,000 ngo-2025 kanye no-112,000 ngo-2026. Lokhu kukhula kuzokhulisa ngqo isidingo sama-interposer e-SiC.

Nakuba ama-substrate e-SiC angu-12-intshi ebiza kakhulu njengamanje, amanani kulindeleke ukuthi ehle kancane kancane aye emazingeni afanele njengoba ukukhiqizwa ngobuningi kukhuphuka futhi ubuchwepheshe buvuthwa, okudala izimo zokusetshenziswa okukhulu.

Ama-interposer e-SiC awaxazululi nje kuphela izinkinga zokushabalalisa ukushisa kodwa futhi athuthukisa kakhulu ubuningi bokuhlanganiswa. Indawo yama-substrates e-SiC angu-12 intshi inkulu cishe ngo-90% kuneyama-substrates angu-8 intshi, okuvumela i-interposer eyodwa ukuthi ihlanganise amamojula e-Chiplet amaningi, isekela ngqo izidingo zokupakishwa kwe-NVIDIA's 7x reticle CoWoS.

I-TSMC isebenzisana nezinkampani zaseJapan ezifana ne-DISCO ukuthuthukisa ubuchwepheshe bokukhiqiza i-SiC interposer. Uma imishini emisha isikhona, ukukhiqizwa kwe-SiC interposer kuzoqhubeka kahle, kanti kulindeleke ukuthi kuqale ukufakwa ekupakisheni okuthuthukisiwe ngo-2027.

Ngenxa yalezi zindaba, amasheya ahlobene ne-SiC asebenze kahle kakhulu ngomhlaka-5 Septhemba, kanti inkomba ikhuphuke ngo-5.76%. Izinkampani ezifana ne-Tianyue Advanced, i-Luxshare Precision, kanye ne-Tiantong Co. zifinyelele umkhawulo wansuku zonke, kanti i-Jingsheng Mechanical & Electrical kanye ne-Yintang Intelligent Control zikhuphuke ngaphezu kuka-10%.

Ngokusho kwe-Daily Economic News, ukuze kuthuthukiswe ukusebenza, i-NVIDIA ihlela ukufaka esikhundleni sezinto ezisezingeni eliphakathi enkambisweni yokupakisha ethuthukisiwe ye-CoWoS nge-silicon carbide ohlelweni lwayo lokuthuthukiswa kweprosesa ye-Rubin yesizukulwane esilandelayo.

Ulwazi lomphakathi lubonisa ukuthi i-silicon carbide inezakhiwo ezinhle kakhulu zomzimba. Uma kuqhathaniswa namadivayisi e-silicon, amadivayisi e-SiC anikeza izinzuzo ezifana nokuminyana kwamandla aphezulu, ukulahlekelwa amandla aphansi, kanye nokuzinza okumangalisayo kokushisa okuphezulu. Ngokusho kwe-Tianfeng Securities, uchungechunge lwemboni ye-SiC oluphezulu luhilela ukulungiswa kwe-SiC substrates kanye nama-epitaxial wafers; i-midstream ihlanganisa ukuklama, ukukhiqizwa, kanye nokupakishwa/ukuhlolwa kwamadivayisi kagesi e-SiC namadivayisi e-RF.

Ngaphansi, izinhlelo zokusebenza ze-SiC zibanzi, zimboza izimboni ezingaphezu kweshumi, okuhlanganisa izimoto ezintsha zamandla, ama-photovoltaic, ukukhiqizwa kwezimboni, ezokuthutha, iziteshi zokuxhumana, kanye ne-radar. Phakathi kwalezi, izimoto zizoba yinkambu yesicelo esiyinhloko se-SiC. Ngokusho kwe-Aijian Securities, ngo-2028, umkhakha wezimoto uzobala u-74% wemakethe yamadivayisi we-SiC yamandla omhlaba wonke.

Ngokuphathelene nosayizi wemakethe iyonke, ngokusho kwe-Yole Intelligence, osayizi bemakethe yomhlaba wonke ye-SiC substrate eqhubayo negcina umswakama babeyizigidi ezingu-512 kanye nezigidi ezingu-242, ngokulandelana, ngo-2022. Kulindeleke ukuthi ngo-2026, usayizi wemakethe ye-SiC yomhlaba wonke uzofinyelela ku-2.053 billion, kanye nosayizi we-substrate ye-SiC eqhubayo negcina umswakama ofinyelela ku-1.62 billion kanye no-$433 million, ngokulandelana. Amanani okukhula konyaka ahlanganisiwe (ama-CAGR) we-substrate ye-SiC eqhubayo negcina umswakama oyingxenye kusukela ngo-2022 kuya ku-2026 kulindeleke ukuthi abe ngu-33.37% kanye no-15.66%, ngokulandelana.

I-XKH Ikhethekile Ekuthuthukisweni Okungokwezifiso kanye Nokuthengiswa Komhlaba Wonke Kwemikhiqizo ye-Silicon Carbide (SiC), enikeza ububanzi obugcwele obungamasentimitha angu-2 kuya kwangu-12  ...